BLF8G10LS-270
Power LDMOS transistor
Rev. 1 — 17 August 2012
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS power transistor for base station applications at frequencies from
820 MHz to 960 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
2-carrier W-CDMA
[1]
f
IDq
VDS
PL(AV)
Gp
D
ACPR5M
(MHz)
(mA)
(V)
(W)
(dB)
(%)
(dBc)
920 to 960
2000
28
67
18.5
33
35[1]
3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 10 MHz spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (820 MHz to 960 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
820 MHz to 960 MHz frequency range
BLF8G10LS-270
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
3
[1]
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLF8G10LS-270
Name Description
Version
-
SOT502B
earless flanged ceramic package; 2 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+11
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
BLF8G10LS-270
Product data sheet
Conditions
Typ
thermal resistance from junction to case Tcase = 80 C; PL = 67 W (CW)
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 August 2012
Unit
0.264 K/W
© NXP B.V. 2012. All rights reserved.
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Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 4.5 mA
Min Typ
Max
Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 450
mA
1.5
1.8
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
4.2
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
81.3
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
420
nA
gfs
forward transconductance
VDS = 10 V;
ID = 450 mA
-
3.91
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 15.75 A
-
0.0418 -
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; carrier spacing
10 MHz; 3GPP test model 1; 1-64 DPCH; f1 = 922.5 MHz; f2 = 932.5 MHz; f3 = 947.5 MHz;
f4 = 957.5 MHz; RF performance at VDS = 28 V; IDq = 2000 mA; Tcase = 25 C; unless otherwise
specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Gp
RLin
Max
Unit
power gain
PL(AV) = 67 W
17.3
18.5 -
dB
input return loss
PL(AV) = 67 W
-
14
10
dB
D
drain efficiency
PL(AV) = 67 W
28.0
33
-
%
ACPR5M
adjacent channel power ratio (5 MHz)
PL(AV) = 67 W
-
35
30
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G10LS-270 is capable to withstand a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 2000 mA; PL = 270 W; f = 820 MHz; f = 869 MHz; f = 920 MHz; f = 960 MHz.
BLF8G10LS-270
Product data sheet
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Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
IDq = 2700 mA; main transistor VDS = 28 V.
f
ZS[1]
ZL[1]
(MHz)
()
()
820
1.58 j1.96
1.29 j1.95
869
1.84 j2.70
1.12 j1.83
881
1.78 j2.94
1.12 j1.84
894
1.90 j3.08
1.12 j1.84
920
2.06 j2.50
1.04 j1.13
940
2.10 j2.90
1.04 j1.13
960
2.56 j2.65
1.00 j1.22
[1]
ZS and ZL defined in Figure 1.
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit information
PP
PP
&
&
&
&
&
&
&
5
&
&
&
&
PP
&
&
%/)*/6BB9,1387
&
5
&
%/)*/6BB9287387
&
&
&
&
&
&
&
&
&
DDD
Printed-Circuit Board (PCB): Rogers 4350B; r = 3.66; thickness = 0.765 mm;
thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 2.
BLF8G10LS-270
Product data sheet
Component layout for class-AB production test circuit
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Rev. 1 — 17 August 2012
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NXP Semiconductors
Power LDMOS transistor
Table 9.
List of components
For test circuit see Figure 2.
Component
Description
Value
Remarks
C1, C4
multilayer ceramic chip capacitor
47 pF
[1]
C2, C3, C5, C6
multilayer ceramic chip capacitor
45 pF
[1]
ATC100B
multilayer ceramic chip capacitor
0.01 F
[2]
Murata
multilayer ceramic chip capacitor
0.1 F
[2]
Murata
C9, C13, C17, C21
multilayer ceramic chip capacitor
1 F
[2]
Murata
C10, C14, C18, C22
multilayer ceramic chip capacitor
4.7 F
[2]
Murata
C23, C24
electrolytic capacitor
470 F, 63 V
R1, R2
chip resistor
9.1
[3]
Vishay Dale 0805
C7, C11, C15, C19
C8, C12, C16, C20
[1]
ATC100B
American Technical Ceramics type 100B or capacitor of same quality.
[2]
Murata or capacitor of same quality.
[3]
Vishay Dale resistor of same quality.
7.4 Graphical data
7.4.1 CW
*S
G%
DDD
Ș'
*S
Ș'
3/ G%P
VDS = 28 V; IDq = 2000 mA
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
Fig 3.
BLF8G10LS-270
Product data sheet
Power gain and drain efficiency as function of load power; typical values
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NXP Semiconductors
Power LDMOS transistor
7.4.2 CW pulsed
*S
G%
DDD
Ș'
*S
Ș'
3/ G%P
VDS = 28 V; IDq = 2000 mA
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
Fig 4.
Power gain and drain efficiency as function of load power; typical values
7.4.3 1-Carrier W-CDMA
*S
G%
DDD
*S
$&350
G%F
Ș'
DDD
Ș'
3/ G%P
VDS = 28 V; IDq = 2000 mA
(1) f = 920 MHz
(2) f = 940 MHz
(2) f = 940 MHz
(3) f = 960 MHz
(3) f = 960 MHz
Power gain and drain efficiency as function of
load power; typical values
BLF8G10LS-270
Product data sheet
3/ G%P
VDS = 28 V; IDq = 2000 mA
(1) f = 920 MHz
Fig 5.
Fig 6.
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
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Rev. 1 — 17 August 2012
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NXP Semiconductors
Power LDMOS transistor
3$5
G%
DDD
3/ G%P
VDS = 28 V; IDq = 2000 mA
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
Fig 7.
Peak to average ratio as a function of load power; typical values
7.4.4 2-Carrier W-CDMA
*S
G%
DDD
Ș'
*S
DDD
$&350
G%F
Ș'
3/ G%P
VDS = 28 V; IDq = 2000 mA
(1) f = 920 MHz
(2) f = 940 MHz
(2) f = 940 MHz
(3) f = 960 MHz
(3) f = 960 MHz
Power gain and drain efficiency as function of
load power; typical values
BLF8G10LS-270
Product data sheet
3/ G%P
VDS = 28 V; IDq = 2000 mA
(1) f = 920 MHz
Fig 8.
Fig 9.
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
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Rev. 1 — 17 August 2012
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BLF8G10LS-270
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Earless flanged ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
07-05-09
12-05-02
SOT502B
Fig 10. Package outline SOT502B
BLF8G10LS-270
Product data sheet
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Rev. 1 — 17 August 2012
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Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
3GPP
3rd Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical Channel
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
PAR
Peak-to-Average Ratio
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 11.
Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BLF8G10LS-270 v.1
20120817
-
BLF8G10LS-270
Product data sheet
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 August 2012
-
© NXP B.V. 2012. All rights reserved.
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Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLF8G10LS-270
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
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Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
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Product data sheet
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14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
7.4.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
Test circuit information . . . . . . . . . . . . . . . . . . . 4
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
CW pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Handling information. . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 August 2012
Document identifier: BLF8G10LS-270
