BLL6H0514LS-130

BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10 10 ηD (%) 54 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLL6H0514L-130 (SOT1135A) 1 2 3 2 3 sym112 1 BLL6H0514LS-130 (SOT1135B) 1 2 3 drain gate source [1] 1 2 1 3 sym112 3 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name Description BLL6H0514L-130 BLL6H0514LS-130 flanged ceramic package; 2 mounting holes; 2 leads earless flanged ceramic package; 2 leads Version SOT1135A SOT1135B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 100 +13 18 +150 200 Unit V V A °C °C BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 1 — 9 August 2010 2 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 5. Thermal characteristics Table 5. Symbol Zth(j-c) Thermal characteristics Parameter transient thermal impedance from junction to case Conditions Tcase = 85 °C; PL = 130 W tp = 100 μs; δ = 10 % tp = 200 μs; δ = 10 % tp = 300 μs; δ = 10 % tp = 100 μs; δ = 20 % tp = 1 ms; δ = 10 % 0.17 0.22 0.25 0.23 0.36 K/W K/W K/W K/W K/W Typ Unit 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 630 mA VDS = 10 V; ID = 135 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 135 mA VGS = VGS(th) + 6.25 V; ID = 135 mA Min 100 1.3 Typ Max 1.8 2.25 1.4 140 Unit V V μA A nA mΩ 15.8 18 806 - 1578 mS 200 275 Table 7. RF characteristics Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 50 V; IDq = 50 mA; f = 1.2 GHz to 1.4 GHz; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit. Symbol PL VDS Gp RLin ηD Pdroop(pulse) tr tf Parameter output power drain-source voltage power gain input return loss drain efficiency pulse droop power rise time fall time PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W Conditions Min Typ Max Unit 130 15 7 45 17 10 50 0 20 6 50 0.3 50 50 W V dB dB % dB ns ns BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 1 — 9 August 2010 3 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 6.1 Ruggedness in class-AB operation The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 130 W; f = 1.2 GHz to 1.4 GHz; tp = 300 μs; δ = 10 %. 7. Application information 7.1 Impedance information Table 8. f MHz 1200 1300 1400 Typical impedance ZS Ω 1.21 − j3.44 1.56 − j4.49 2.21 − j4.86 ZL Ω 2.40 − j0.63 2.30 − j0.87 2.00 − j1.71 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 1 — 9 August 2010 4 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 7.2 Performance curves 20 Gp (dB) 16 Gp ηD 001aam262 60 ηD (%) 50 20 RLin (dB) 16 001aam263 12 40 12 8 30 8 4 20 4 0 1.15 1.25 1.35 f (GHz) 10 1.45 0 1.15 1.25 1.35 f (GHz) 1.45 VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. Fig 2. Power gain and drain efficiency as function of frequency; typical values Fig 3. Input return loss as a function of frequency; typical values 20 Gp (dB) 16 (1) (2) (3) 001aam264 60 ηD (%) 50 001aam265 12 40 8 30 (1) (2) (3) 4 20 0 0 40 80 120 PL (W) 160 10 0 40 80 120 PL (W) 160 VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz Fig 4. Power gain as a function of load power; typical values Fig 5. Drain efficiency as function of load power; typical values BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 1 — 9 August 2010 5 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 160 PL (W) 120 001aam266 80 (1) (2) (3) 40 0 0 1 2 3 Pi (W) 4 VDS = 50 V; IDq = 50 mA; tp = 300 μs; δ = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz Fig 6. Load power as a function of input power; typical values 8. Test information C3 C8 C1 C2 C4 C5 R2 C9 C11 C10 C13 R1 C12 C6 C7 001aam267 Printed-Circuit Board (PCB) material: Duroid 6006 with εr = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 7. Component layout BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 1 — 9 August 2010 6 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor Table 9. List of components See Figure 7 for component layout. Component C1 C2, C11 C3, C4, C6, C9, C10 C5, C7, C8 C12 C13 R1 R2 [1] [2] [3] Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor SMD resistor wirewound lead resistor Value 10 μF; 50 V 1 nF 100 pF 43 pF 220 μF; 63 V 1 nF 10 Ω 2.61 Ω; 0.25 W [3] [1] [2] [2] Remarks fitted vertically in series with R2 SMD 0603 fitted in series with C13 American Technical Ceramics type 700A or capacitor of same quality. American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 1 — 9 August 2010 7 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A D A F D1 U1 q 1 B C c H U2 p E1 E 3 w1 A B A 2 b w2 C Q 0 Dimensions Unit(1) mm A b 5.26 5.00 c D D1 E E1 F H 19.94 18.92 5 scale p 3.30 2.92 Q 1.70 10 mm q 15.24 U1 U2 w1 w2 max 4.65 nom min 3.76 0.18 9.65 9.65 9.65 9.65 1.14 0.10 9.40 9.40 9.40 9.40 0.89 20.45 9.91 0.25 0.51 20.19 9.65 0.805 0.39 0.01 0.02 0.795 0.38 1.45 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.130 0.067 inches nom 0.6 min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.115 0.057 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version SOT1135A References IEC JEDEC JEITA sot1135a_po European projection Issue date 09-10-12 09-12-14 Fig 8. Package outline SOT1135A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. BLL6H0514L-130_0514LS-130 Preliminary data sheet Rev. 1 — 9 August 2010 8 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor Earless flanged ceramic package; 2 leads SOT1135B D A F 3 D1 D U1 c 1 H U2 E1 E 2 b w2 D Q 0 Dimensions Unit(1) mm A b 5.26 5.00 c D D1 E E1 F H 19.94 18.92 5 scale Q 1.70 1.45 U1 9.91 9.65 0.39 0.38 10 mm U2 9.91 w2 0.51 max 4.65 nom min 3.76 0.18 9.65 9.65 9.65 9.65 1.14 0.10 9.40 9.40 9.40 9.40 0.89 9.65 0.39 0.02 0.38 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 inches nom min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version SOT1135B References IEC JEDEC JEITA sot1135b_po European projection Issue date 09-10-12 09-12-14 Fig 9. Package outline SOT1135B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. BLL6H0514L-130_0514LS-130 Preliminary data sheet Rev. 1 — 9 August 2010 9 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Acronym LDMOS RF VSWR Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Voltage Standing-Wave Ratio 12. Revision history Table 11. Revision history Release date 20100809 Data sheet status Preliminary data sheet Change notice Supersedes Document ID BLL6H0514L-130_0514LS-130 v.1 BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 1 — 9 August 2010 10 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Preliminary data sheet Rev. 1 — 9 August 2010 12 of 13 NXP Semiconductors BLL6H0514L(S)-130 LDMOS driver transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 August 2010 Document identifier: BLL6H0514L-130_0514LS-130