BLL6H1214-500

BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 500 Gp (dB) 17 ηD (%) 50 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source [1] Simplified outline 1 2 5 Graphic symbol 1 3 3 4 4 5 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLL6H1214-500 Description flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 100 +13 45 +150 200 Unit V V A °C °C BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 2 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 5. Thermal characteristics Table 5. Symbol Zth(j-c) Thermal characteristics Parameter transient thermal impedance from junction to case Conditions Tcase = 85 °C; PL = 500 W tp = 100 μs; δ = 10 % tp = 200 μs; δ = 10 % tp = 300 μs; δ = 10 % tp = 100 μs; δ = 20 % 0.07 0.08 0.1 0.1 K/W K/W K/W K/W Typ Unit 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 270 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 270 mA Min 100 1.3 32 1.7 Typ 1.8 42 3 100 Max Unit 2.2 1.4 140 164 V V μA A nA S mΩ V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A Table 7. RF characteristics Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 50 V; IDq = 150 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit. Symbol PL VDS Gp RLin PL(1dB) ηD Pdroop(pulse) tr tf Parameter output power drain-source voltage power gain input return loss output power at 1 dB gain compression drain efficiency pulse droop power rise time fall time PL = 500 W PL = 500 W PL = 500 W PL = 500 W PL = 500 W PL = 500 W PL = 500 W Conditions Min Typ Max Unit 500 15 45 17 10 600 50 0 20 6 50 0.3 50 50 W V dB dB W % dB ns ns 6.1 Ruggedness in class-AB operation The BLL6H1214-500 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 150 mA; PL = 500 W; tp = 300 μs; δ = 10 %. BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 3 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f GHz 1.2 1.3 1.4 ZS Ω 1.268 − j2.623 2.193 − j2.457 2.359 − j2.052 ZL Ω 2.987 − j1.664 2.162 − j1.326 1.604 − j1.887 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 4 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2 RF performance 7.2.1 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 25 °C 001aak751 001aak752 700 PL (W) 600 500 400 300 200 100 0 0 4 8 12 (1) (2) (3) (4) (5) 20 Gp (dB) 15 (1) (2) (3) (4) (5) 10 5 0 16 Pi (W) 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1250 MHz (3) f = 1300 MHz (4) f = 1350 MHz (5) f = 1400 MHz VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1250 MHz (3) f = 1300 MHz (4) f = 1350 MHz (5) f = 1400 MHz Fig 2. Output power as a function of input power; typical values Fig 3. Power gain as a function of load power; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 5 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 60 ηD (%) 40 001aak753 20 Gp (dB) 18 ηD Gp 001aak754 60 ηD (%) 50 (1) (2) (3) (4) (5) 16 40 14 20 12 30 20 0 0 100 200 300 400 500 600 700 PL (W) 10 1175 1225 1275 1325 10 1375 1425 f (MHz) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1250 MHz (3) f = 1300 MHz (4) f = 1350 MHz (5) f = 1400 MHz VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. Fig 4. Drain efficiency as a function of load power; typical values Fig 5. Power gain and drain efficiency as function of frequency; typical values 0 RLin (dB) −5 001aak755 −10 −15 −20 −25 1175 1225 1275 1325 1375 1425 f (MHz) PL = 500 W; VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA. Fig 6. Input return loss as a function of frequency; typical value BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 6 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2.2 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 65 °C 001aak756 001aak757 700 PL (W) 600 500 18 Gp (dB) 12 (1) (2) (3) (1) (2) (3) 400 300 6 200 100 0 0 6 12 Pi (W) 18 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 7. Output power as a function of input power; typical values 60 001aak758 Fig 8. Power gain as a function of load power; typical values 20 001aak759 55 ηD (%) 45 ηD (%) 40 Gp (dB) 18 ηD (1) (2) (3) Gp 16 35 14 20 12 25 15 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 1.35 f (GHz) 5 1.45 VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz PL = 250 W; VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 100 mA. Fig 9. Drain efficiency as a function of load power; typical values Fig 10. Power gain and drain efficiency as function of frequency; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 7 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2.3 Performance curves measured with δ = 10 %, tp = 300 μs and f = 1300 MHz 001aal688 001aal689 700 PL (W) 600 (1) 20 Gp (dB) 18 500 400 300 200 (2) (3) 16 (1) (2) (3) 14 12 100 0 0 5 10 15 20 Pi (W) 25 10 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 11. Output power as a function of input power; typical values Fig 12. Power gain as a function of load power; typical values 60 ηD (%) 40 001aal690 (1) (2) (3) 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 300 μs; δ = 10 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 13. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 8 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2.4 Performance curves measured with δ = 20 %, tp = 500 μs and Ths = 25 °C 001aal691 001aal692 700 PL (W) 600 (1) 20 Gp (dB) 16 (1) (2) (3) 500 400 300 200 (2) (3) 12 8 4 100 0 0 5 10 15 20 Pi (W) 25 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 14. Output power as a function of input power; typical values 60 ηD (%) 40 001aal693 (1) Fig 15. Power gain as a function of load power; typical values 20 Gp (dB) 18 Gp 16 35 ηD 001aal694 55 ηD (%) 45 (2) (3) 14 20 12 25 15 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 1.35 f (GHz) 5 1.45 VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. Fig 16. Drain efficiency as a function of load power; typical values Fig 17. Power gain and drain efficiency as function of frequency; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 9 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2.5 Performance curves measured with δ = 20 %, tp = 500 μs and Ths = 65 °C 001aal695 001aal696 700 PL (W) 600 500 400 300 200 (1) (2) (3) 20 Gp (dB) 18 16 (1) (2) (3) 14 12 100 0 0 5 10 15 20 Pi (W) 25 10 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 18. Output power as a function of input power; typical values 60 ηD (%) (1) 001aal697 Fig 19. Power gain as a function of load power; typical values 20 Gp (dB) 18 001aal698 55 ηD (%) 45 ηD 40 (3) (2) 16 Gp 35 14 20 12 25 15 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 1.35 f (GHz) 5 1.45 VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. Fig 20. Drain efficiency as a function of load power; typical values Fig 21. Power gain and drain efficiency as function of frequency; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 10 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2.6 Performance curves measured with δ = 20 %, tp = 500 μs and f = 1300 MHz 001aal699 001aal700 700 PL (W) 600 500 400 300 200 (1) (2) (3) 20 Gp (dB) 16 (1) (2) (3) 12 8 4 100 0 0 5 10 15 20 Pi (W) 25 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 22. Output power as a function of input power; typical values Fig 23. Power gain as a function of load power; typical values 60 ηD (%) 40 001aal701 (1) (2) (3) 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 24. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 11 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2.7 Performance curves measured with δ = 10 %, tp = 1 ms and Ths = 25 °C 001aal702 001aal703 700 PL (W) 600 (1) 20 Gp (dB) 16 (1) (2) (3) 500 400 300 200 (2) (3) 12 8 4 100 0 0 5 10 15 20 Pi (W) 25 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 25. Output power as a function of input power; typical values 60 ηD (%) 40 001aal704 (1) (2) (3) Fig 26. Power gain as a function of load power; typical values 20 Gp (dB) 18 Gp 16 35 ηD 001aal705 55 ηD (%) 45 14 20 12 25 15 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 1.35 f (GHz) 5 1.45 VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. Fig 27. Drain efficiency as a function of load power; typical values Fig 28. Power gain and drain efficiency as function of frequency; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 12 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2.8 Performance curves measured with δ = 10 %, tp = 1 ms and Ths = 65 °C 001aal706 001aal707 700 PL (W) 600 (1) 20 Gp (dB) 16 (1) (2) (3) 500 400 300 200 (2) (3) 12 8 4 100 0 0 5 10 15 20 Pi (W) 25 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 29. Output power as a function of input power; typical values 60 ηD (%) 40 001aal708 Fig 30. Power gain as a function of load power; typical values 20 Gp (dB) ηD 001aal709 55 ηD (%) 45 (1) 18 (2) 16 (3) Gp 35 14 20 12 25 15 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 1.35 f (GHz) 5 1.45 VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA. Fig 31. Drain efficiency as a function of load power; typical values Fig 32. Power gain and drain efficiency as function of frequency; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 13 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 7.2.9 Performance curves measured with δ = 10 %, tp = 1 ms and f = 1300 MHz 001aal710 001aal711 700 PL (W) 600 500 400 300 200 (1) (2) (3) 20 Gp (dB) 16 (1) (2) (3) 12 8 4 100 0 0 5 10 15 20 Pi (W) 25 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 33. Output power as a function of input power; typical values Fig 34. Power gain as a function of load power; typical values 60 ηD (%) 40 001aal712 (1) (2) (3) 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; tp = 500 μs; δ = 20 %; IDq = 150 mA; f = 1300 MHz. (1) Ths = −40 °C (2) Ths = 25 °C (3) Ths = 65°C Fig 35. Drain efficiency as a function of load power; typical values BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 14 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 8. Test information Table 9. List of components For test circuit see Figure 36. Component C1 C2 C3, C4 C5, C11, C12 C6 C7, C8, C10 C9 C13 R1 R2 [1] [2] [3] Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor metal film resistor Value 22 μF; 35 V 51 pF 100 pF 1 nf 47 pF 51 pF 100 pF 10 μF; 63 V 56 Ω 51 Ω [1] [1] [2] [1] [3] [3] Remarks 0603 American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. American Technical Ceramics type 800B or capacitor of same quality. C10 C12 C1 C2 R1 C3 C4 C5 C8 C9 C11 C13 R2 C6 C7 001aaj490 Printed-Circuit Board (PCB): Duroid 6006; εr = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm. See Table 9 for a list of components. Fig 36. Component layout for class-AB production test circuit BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 15 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 q H1 C B w2 M C M c 1 2 H U2 p E1 w1 M A M B M E 5 L A 3 b e 4 w3 M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.7 4.2 b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.26 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 41.28 10.29 0.25 41.02 10.03 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION SOT539A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-03-03 10-02-02 Fig 37. Package outline SOT539A BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 16 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 10. Abbreviations Table 10. Acronym LDMOS LDMOST RF SMD L-band VSWR Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface Mounted Device Long wave Band Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Release date 20100401 Data sheet status Product data sheet Change notice Supersedes BLL6H1214-500_1 Document ID BLL6H1214-500_2 Modifications: • • • • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. The status of this data sheet has been changed to “Product data sheet” Added Section 7.2.3 on page 8. Added Section 7.2.4 on page 9. Added Section 7.2.5 on page 10. Added Section 7.2.6 on page 11. Added Section 7.2.7 on page 12. Added Section 7.2.8 on page 13. Added Section 7.2.9 on page 14. Objective data sheet - BLL6H1214-500_1 20090120 BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 17 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. 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Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the © NXP B.V. 2010. All rights reserved. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 1 April 2010 18 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLL6H1214-500_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 1 April 2010 19 of 20 NXP Semiconductors BLL6H1214-500 LDMOS L-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.2.1 7.2.2 7.2.3 7.2.4 7.2.5 7.2.6 7.2.7 7.2.8 7.2.9 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 25 °C . . . . . . . . . . . . . . . 5 Performance curves measured with δ = 10 %, tp = 300 μs and Ths = 65 °C . . . . . . . . . . . . . . . 7 Performance curves measured with δ = 10 %, tp = 300 μs and f = 1300 MHz. . . . . . . . . . . . . . 8 Performance curves measured with δ = 20 %, tp = 500 μs and Ths = 25 °C . . . . . . . . . . . . . . . 9 Performance curves measured with δ = 20 %, tp = 500 μs and Ths = 65 °C . . . . . . . . . . . . . . 10 Performance curves measured with δ = 20 %, tp = 500 μs and f = 1300 MHz. . . . . . . . . . . . . 11 Performance curves measured with δ = 10 %, tp = 1 ms and Ths = 25 °C . . . . . . . . . . . . . . . . 12 Performance curves measured with δ = 10 %, tp = 1 ms and Ths = 65 °C . . . . . . . . . . . . . . . . 13 Performance curves measured with δ = 10 %, tp = 1 ms and f = 1300 MHz . . . . . . . . . . . . . . 14 Test information . . . . . . . . . . . . . . . . . . . . . . . . 15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 April 2010 Document identifier: BLL6H1214-500_2