BLM6G22-30

BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 — 21 November 2008 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Typical performance Typical RF performance at Th = 25 °C. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 29.5 ηD (%) 9 IMD3 (dBc) −48[1] ACPR (dBc) −50[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz: N Average output power = 2 W N Power gain = 30 dB (typ) N Efficiency = 9 % N IMD3 = −48 dBc N ACPR = −50 dBc I Integrated temperature compensated bias I Excellent thermal stability I Biasing of individual stages is externally accessible I Integrated ESD protection I Small component size, very suitable for PA size reduction I On-chip matching (input matched to 50 Ohm, output partially matched) I High power gain I Designed for broadband operation (2100 MHz to 2200 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 2. Pinning information 2.1 Pinning BLM6G22-30 BLM6G22-30G GND VDS1 n.c. n.c. n.c. RF_INPUT n.c. n.c. VGS1 1 2 3 4 5 6 7 8 9 16 GND 15 n.c. 14 RF_OUTPUT/VDS2 VGS2 10 GND 11 13 n.c. 12 GND 001aae321 Transparent top view. Fig 1. Pin configuration 2.2 Pin description Table 2. Symbol GND VDS1 n.c. RF_INPUT VGS1 VGS2 RF_OUT/VDS2 RF_GND Pin description Pin 1, 11, 12, 16 2 3, 4, 5, 7, 8, 13, 15 6 9 10 14 flange Description ground first stage drain-source voltage not connected RF input first stage gate-source voltage second stage gate-source voltage RF output or second stage drain-source voltage RF ground 3. Ordering information Table 3. Ordering information Package Name BLM6G22-30 BLM6G22-30G HSOP16 Description plastic, heatsink small outline package; 16 leads Version SOT822-1 HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT834-1 Type number BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 2 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 4. Block diagram VDS1 RF_INPUT VGS1 VGS2 2 6 9 10 TEMPERATURE COMPENSATED BIAS 001aah621 14 RF_OUTPUT/VDS2 Fig 2. Block diagram of BLM6G22-30 and BLM6G22-30G 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID1 ID2 Tstg Tj Parameter drain-source voltage gate-source voltage first stage drain current second stage drain current storage temperature junction temperature Conditions Min 0.5 −65 Max 65 +13 3 9 +150 200 Unit V V A A °C °C 6. Thermal characteristics Table 5. Symbol Rth(j-c)1 Rth(j-c)2 [1] Thermal characteristics Parameter first stage thermal resistance from junction to case Conditions Tcase = 25 °C; PL = 2 W; 2-carrier W-CDMA [1] Value 3.9 2.1 Unit K/W K/W second stage thermal resistance Tcase = 25 °C; PL = 2 W; from junction to case 2-carrier W-CDMA [1] Thermal resistance is determined under specific RF operating conditions. BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 3 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 7. Characteristics Table 6. Characteristics Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; Th = 25 °C unless otherwise specified; in a production test circuit as described in Section 9 “Test information”. Symbol Gp RLin ηD IMD3 ACPR Parameter power gain input return loss drain efficiency third order intermodulation distortion adjacent channel power ratio Conditions PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W Min 10 7.5 Typ 14 9 −48 −50 Max 32.5 −44.5 −47 Unit dB dB % dBc dBc 27.5 30 8. Application information 8.1 Ruggedness The BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; PL = 2 W; 2-carrier W-CDMA. 8.2 Impedance information Table 7. f MHz 2075 2085 2095 2105 2115 2125 2135 2145 2155 2165 2175 2185 2195 2205 [1] [2] Typical impedance Zi[1] Ω 40.9 + j22.8 41.2 + j23.2 41.6 + j23.3 41.9 + j23.3 42.1 + j23.3 42.2 + j23.2 42.4 + j23.1 42.3 + j22.9 42.5 + j22.8 42.6 + j22.8 42.7 + j22.8 43.0 + j23.0 43.6 + j23.1 44.2 + j23.3 ZL[2] Ω 18.0 − j5.5 17.8 − j5.6 17.7 − j5.7 17.7 − j5.9 17.6 − j6.0 17.4 − j6.0 17.3 − j6.1 17.2 − j6.1 17.0 − j6.2 16.8 − j6.3 16.6 − j6.4 16.4 − j6.6 16.3 − j6.9 16.1 − j7.2 Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 4 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 8.3 Performance curves Performance curves are measured in a BLM6G22-30G application circuit. 35 Gp (dB) 33 001aah622 15 ηD (%) 13 −45 IMD3, ACPR (dBc) −47 IMD3 001aah623 31 Gp ηD 11 29 9 −49 ACPR 27 7 25 2050 2100 2150 2200 f (MHz) 5 2250 −51 2050 2100 2150 2200 f (MHz) 2250 Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. Fig 3. 2-carrier W-CDMA power gain and drain efficiency as functions of frequency; typical values 001aah624 Fig 4. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of frequency; typical values 001aah625 38 Gp (dB) 36 (1) 35 ηD (%) 30 25 IMD3, −20 ACPR (dBc) −25 −30 −35 −40 −45 (2) (1) (3) IMD3 ACPR Gp 34 32 30 28 26 24 10−1 (3) (2) Gp ηD Gp 20 15 10 5 0 (1), (2), (3) −50 (2) (3) (1) 1 10 PL(AV) (W) 102 −55 10−1 1 10 PL(AV) (W) 102 VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. (1) Tcase = −30 °C (2) Tcase = 25 °C (3) Tcase = 85 °C VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. (1) Tcase = −30 °C (2) Tcase = 25 °C (3) Tcase = 85 °C Fig 5. 2-carrier W-CDMA power gain and drain efficiency as functions of average output power and temperature; typical values Fig 6. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of average output power and temperature; typical values © NXP B.V. 2008. All rights reserved. BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet Rev. 03 — 21 November 2008 5 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 32 Gp (dB) 30 001aah626 −20 IMD (dBc) −30 −40 −50 001aah627 IMD3 IMD5 IMD7 28 (1) (2) (3) −60 −70 −80 26 24 0 10 20 30 PL (W) 40 −90 10−1 1 10 PL(PEP) (W) 102 f = 2140 MHz; IDq1 = 270 mA; IDq2 = 280 mA. (1) VDS = 24 V (2) VDS = 28 V (3) VDS = 32 V IDq1 = 270 mA; IDq2 = 280 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. Fig 7. One-tone CW power gain as function of output power and drain-source voltage; typical value Fig 8. Two-tone CW intermodulation distortion as function of peak envelope load power; typical value 001aah628 35 PL(M) (W) 31 (1) (2) (3) 27 23 19 15 2050 2100 2150 2200 f (MHz) 2250 Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. (1) Tcase = −30 °C (2) Tcase = 25 °C (3) Tcase = 85 °C Fig 9. Single-carrier peak output power as function of frequency and temperature; typical values BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 6 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 9. Test information C11 C9 C15 C3 C4 C5 C1 C13 C14 C6 C7 R1 R2 C2 C8 C10 C12 001aah629 Striplines are on a double copper-clad Rogers 4350B Printed-Circuit Board (PCB) with εr = 3.5; thickness = 0.76 mm. See Table 8 for a list of components. Fig 10. Component layout for 2110 MHz to 2170 MHz circuit for 2-carrier W-CDMA Table 8. List of components For test circuit see Figure 10. Component C1, C13 C3, C15 C5, C9, C10, C14 C6, C7 R1 R2 [1] Description Value [1] Remarks multilayer ceramic chip capacitor 0.3 pF electrolytic capacitor 220 µF; 35 V C2, C4, C8, C11, C12 multilayer ceramic chip capacitor 4.7 µF; 50 V multilayer ceramic chip capacitor 10 pF multilayer ceramic chip capacitor 100 nF SMD resistor 0805 SMD resistor 0805 1 kΩ 3.9 kΩ [1] American Technical Ceramics (ATC) type 100A or capacitor of same quality. BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 7 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 10. Package outline HSOP16F: plastic, heatsink small outline package; 16 leads (flat) SOT834-1 D E E2 A c y X HE D1 e3 (2×) D2 wM bp2 vM A 16 12 E1 pin 1 index A2 Q1 detail X 1 Z e (6×) e2 (4×) e1 (2×) 11 bp1 (5×) wM wM bp (10×) 0 DIMENSIONS (mm are the original dimensions) UNIT mm A2 3.3 3.0 bp bp1 bp2 5.87 5.72 c 0.32 0.23 D (1) 16.0 15.8 D1 13.0 12.6 D2 1.1 0.9 E (1) 11.1 10.9 E1 6.2 5.8 5 scale E2 2.9 2.5 e 1.02 10 mm e1 1.37 e2 5.69 e3 3.81 HE 16.2 15.8 Q1 1.7 1.5 v 0.25 w 0.25 y 0.1 Z 2.5 2.0 0.43 1.09 0.28 0.94 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT834-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-10-22 Fig 11. Package outline SOT834-1 (HSOP16F) BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 8 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC HSOP16: plastic, heatsink small outline package; 16 leads SOT822-1 E D E2 A y c X HE v M A D1 e3 (2×) w M bp2 16 12 D2 Q E1 pin 1 index A2 A1 A4 (A3) θ Lp A 1 11 detail X Z e (6×) e2 (4×) e1 (2×) bp1 (5×) w M w M bp (10×) 0 5 scale 10 mm HE 14.5 13.9 Lp 1.1 0.8 E (1) 11.1 10.9 Q 1.5 1.4 E1 6.2 5.8 v 0.25 w 0.25 y 0.1 Z 2.5 2.0 θ 8° 0° DIMENSIONS (mm are the original dimensions) UNIT mm A max 3.6 A1 0.2 0 A2 3.3 3.0 A3 0.35 A4 0.06 −0.06 bp 0.43 0.28 b p1 1.09 0.94 b p2 5.87 5.72 c 0.32 0.23 D(1) 16.0 15.8 D1 13.0 12.6 D2 1.1 0.9 E2 2.9 2.5 e 1.02 e1 1.37 e2 5.69 e3 3.81 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included OUTLINE VERSION SOT822-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-07-23 07-02-08 Fig 12. Package outline SOT822-1 (HSOP16) BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 9 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 11. Handling information 11.1 ESD protection Table 9. ESD protection characteristics Class 1 1 Test condition Human Body Model (HBM) Machine Model (MM) 11.2 Moisture sensitivity Table 10. Moisture sensitivity level Class 3 Test methodology JESD-22-A113 12. Abbreviations Table 11. Acronym 3GPP CCDF CW DPCH IS-95 LDMOS MMIC PA PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Interim Standard 95 Laterally Diffused Metal-Oxide Semiconductor Monolithic Microwave Integrated Circuit Power Amplifier Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 13. Revision history Table 12. Revision history Release date Data sheet status Change notice Supersedes BLM6G22-30_BLM6G22-30G_2 BLM6G22-30_BLM6G22-30G_1 Document ID BLM6G22-30_BLM6G22-30G_3 20081121 Modifications: Preliminary data sheet Preliminary data sheet Objective data sheet - • Figure 5: updated BLM6G22-30_BLM6G22-30G_2 20080904 BLM6G22-30_BLM6G22-30G_1 20080303 BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 10 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 14. Legal information 14.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLM6G22-30_BLM6G22-30G_3 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 03 — 21 November 2008 11 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 16. Contents 1 1.1 1.2 2 2.1 2.2 3 4 5 6 7 8 8.1 8.2 8.3 9 10 11 11.1 11.2 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 ESD protection . . . . . . . . . . . . . . . . . . . . . . . . 10 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 November 2008 Document identifier: BLM6G22-30_BLM6G22-30G_3