BLS2731-50

DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-50 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. handbook, halfpage BLS2731-50 PINNING - SOT422A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION 1 APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed, class-C f (GHz) 2.7 to 3.1 VCB (V) 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL (W) 60 Gp (dB) typ. 9 ηC (%) typ. 40 3 2 3 MBK051 Fig.1 Simplified outline. 1998 Jan 30 2 Philips Semiconductors Product specification Microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO ICM Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage peak collector current total power dissipation storage temperature operating junction temperature soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s RBE = 0 open collector tp ≤ 100 µs; δ ≤ 10% tp = 100 µs; δ = 10%; Tmb = 25 °C CONDITIONS open emitter − − − − − −65 − − BLS2731-50 MIN. MAX. 75 75 2 6 80 +200 200 235 UNIT V V V A W °C °C °C THERMAL CHARACTERISTICS SYMBOL Zth j-h Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO ICES IEBO hFE Cc PARAMETER collector-base breakdown voltage collector leakage current collector leakage current emitter leakage current DC current gain collector capacitance (die only) CONDITIONS IC = 15 mA; open emitter VCB = 40 V; IE = 0 VCE = 40 V; VBE = 0 VEB = 1.5 V; IC = 0 VCB = 5 V; IC = 1.5 A VCE = 1 V; IE = ie = 0; f = 1 MHz MIN. 75 75 − − − 40 − − − − − − − 30 TYP. MAX. − − 1.5 3 0.3 − − pF UNIT V V mA mA mA PARAMETER thermal impedance from junction to heatsink CONDITIONS tp = 100 µs; δ = 10%; note 1 VALUE 0.3 UNIT K/W collector-emitter breakdown voltage IC = 15 mA; VBE = 0 APPLICATION INFORMATION RF performance at Th = 25 °C in a common-base test circuit. MODE OF OPERATION Class-C; tp = 100 µs; δ = 10% f (GHz) 2.7 to 3.1 VCE (V) 40 PL (W) ≥50 typ. 60 Gp (dB) ≥8 typ. 9 ηC (%) ≥35 typ. 40 1998 Jan 30 3 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 MGM533 handbook, halfpage 60 (2) (1) (3) handbook, halfpage 12 MGM534 PL (W) 40 Gp (dB) 8 20 4 0 0 2 4 6 8 PD (W) VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.1 GHz. (2) f = 2.7 GHz. (3) f = 2.9 GHz. 10 0 2.6 2.8 3 f (GHz) 3.2 VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%. Fig.2 Load power as a function of drive power; typical values. Fig.3 Power gain as function of frequency; typical values. handbook, halfpage 16 MGM535 handbook, halfpage Zi (Ω) 12 xi (Ω) 8 12 ZL MGM536 4 8 ri 0 4 RL −4 XL 0 2.6 2.8 3 f (GHz) 3.2 −8 2.6 2.8 3 f (GHz) 3.2 VCB = 40 V; class-C; PL = 50 W. VCB = 40 V; class-C; PL = 50 W. Fig.4 Input impedance as function of frequency (series components); typical values. Fig.5 Load impedance as function of frequency (series components); typical values. 1998 Jan 30 4 Philips Semiconductors Product specification Microwave power transistor BLS2731-50 handbook, full pagewidth 30 30 40 C1 C2 C3 input output C4 MGM537 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm. The other side is unetched and serves as a ground plane. C1 = ATC 200A 10 nF C2 = ATC 100A 10 pF C3 = ATC 700A 150 pF C4 = Tekelec trimmer 37281SL 0.4 to 2.5 pF. Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit. 1998 Jan 30 5 Philips Semiconductors Product specification Microwave power transistor PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads BLS2731-50 SOT422A D A F D1 3 U1 q 1 C B c H U2 p E1 w1 M A B E A 2 b w2 M C Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.72 4.83 0.225 0.190 b 5.21 4.95 0.205 0.195 c 0.13 0.08 0.005 0.003 D 9.93 9.68 0.391 0.381 D1 10.29 10.03 0.405 0.395 E 8.76 8.51 0.345 0.335 E1 10.29 10.03 0.405 0.395 F 1.58 1.47 0.062 0.058 H 21.61 21.08 0.89 0.83 p 3.43 3.18 0.135 0.125 Q 3.35 2.92 0.132 0.115 q 16.51 0.65 U1 22.99 22.73 0.905 0.895 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.76 0.03 OUTLINE VERSION SOT422A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-12-24 1998 Jan 30 6 Philips Semiconductors Product specification Microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLS2731-50 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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