BLS6G2933S-130

BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 1.3 Applications S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLS6G2933S-130 Description ceramic earless flanged cavity package; 2 leads Version SOT922-1 Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Min −0.5 −65 Max 60 +13 33 +150 225 Unit V V A °C °C 5. Thermal characteristics Table 5. Symbol Zth(j-mb) Thermal characteristics Parameter Conditions Typ Unit transient thermal impedance from junction Tcase = 85 °C; PL = 130 W to mounting base t = 100 μs; δ = 10 % p 0.23 K/W 0.28 K/W 0.32 K/W 0.33 K/W tp = 200 μs; δ = 10 % tp = 300 μs; δ = 10 % tp = 100 μs; δ = 20 % BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 2 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.6 mA VDS = 10 V; ID = 180 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 9 A VGS = VGS(th) + 3.75 V; ID = 6.3 A Min 60 1.4 27 8.1 Typ 1.8 33 13 0.085 Max 2.4 4.2 450 Unit V V μA A nA S 0.135 Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol PL VCC Gp RLin PL(1dB) ηD Pdroop(pulse) tr tf Parameter output power supply voltage power gain input return loss output power at 1 dB gain compression drain efficiency pulse droop power rise time fall time PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W PL = 130 W Conditions Min Typ 10 7.5 40 130 10 140 47 0 20 6 Max Unit 32 0.5 50 50 W V dB dB W % dB ns ns 12.5 - BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 3 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor Typical impedance ZS Ω 2.2 − j7.6 2.5 − j6.6 3.2 − j5.6 4.5 − j4.8 6.8 − j5.3 ZL Ω 4.5 − j5.6 4.3 − j5.7 4.0 − j5.8 3.6 − j5.8 3.2 − j5.8 Table 8. f GHz 2.9 3.0 3.1 3.2 3.3 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G2933S-130 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 130 W; tp = 300 μs; δ = 10 %. BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 4 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 7.2 Graphs 14 Gp (dB) 10 001aaj266 14 Gp (dB) 10 001aaj267 (2) (3) (1) (2) (3) (1) 6 6 2 0 60 120 PL (W) 180 2 0 60 120 PL (W) 180 VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz Fig 2. Power gain as a function of load power; typical values 60 001aaj268 Fig 3. Power gain as a function of load power; typical values 60 001aaj269 ηD (%) 40 (1) (2) (3) ηD (%) 40 (1) (2) (3) 20 20 0 0 60 120 PL (W) 180 0 0 60 120 PL (W) 180 VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz Fig 4. Drain efficiency as a function of load power; typical values Fig 5. Drain efficiency as a function of load power; typical values BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 5 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 180 PL (W) 120 (2) (3) (1) 001aaj270 180 PL (W) 120 (2) (3) (1) 001aaj271 60 60 0 0 6 12 Pi (W) 18 0 0 6 12 Pi (W) 18 VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz Fig 6. Load power as a function of input power; typical values 14 001aaj272 Fig 7. Load power as a function of input power; typical values 14 001aaj273 60 ηD (%) 50 60 ηD (%) 50 Gp (dB) 12 Gp ηD Gp (dB) 12 Gp ηD 10 40 10 40 8 30 8 30 6 20 6 20 4 2850 2950 3050 3150 10 3250 3350 f (MHz) 4 2850 2950 3050 3150 10 3250 3350 f (MHz) PL = 130 W; VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %. PL = 130 W; VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %. Fig 8. Power gain and drain efficiency as function of frequency; typical values Fig 9. Power gain and drain efficiency as function of frequency; typical values BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 6 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 8. Test information C3 C4 R1 C5 C6 C7 C8 C1 C2 001aaj275 Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit Table 9. List of components See Figure 10. Component C1, C2, C5, C7 C3 C4 C6 C8 R1 Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor Value 33 pF 1 μF 47 μF; 63 V 1 nF 68 μF; 63 V 47 Ω Quantity 1 1 1 2 1 1 SMD 0603 ATC 700A or equivalent Remarks ATC 100A or equivalent ATC 900A or equivalent BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 7 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 9. Package outline Ceramic earless flanged cavity package; 2 leads SOT922-1 D F A 3 D1 D U1 L 1 c H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm inches A 4.22 3.53 b 12.42 12.17 c 0.15 0.10 0.006 0.004 D D1 E 9.53 9.27 E1 9.27 9.02 F 1.32 0.81 H 15.62 14.34 L 3.05 2.03 0.12 0.08 Q 1.70 1.45 U1 17.75 17.50 U2 9.53 9.27 w2 0.25 17.58 17.50 17.22 17.25 0.166 0.489 0.139 0.479 0.692 0.689 0.375 0.365 0.052 0.615 0.678 0.679 0.365 0.355 0.032 0.525 REFERENCES 0.067 0.699 0.375 0.010 0.057 0.689 0.365 EUROPEAN PROJECTION OUTLINE VERSION SOT922-1 IEC JEDEC JEITA ISSUE DATE 05-11-14 05-11-22 Fig 11. Package outline SOT922-1 BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 8 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 10. Abbreviations Table 10. Acronym LDMOS LDMOST RF S-band SMD VSWR Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Surface Mounted Device Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Release date 20100303 20090618 20081211 Data sheet status Product data sheet Preliminary data sheet Objective data sheet Change notice Supersedes BLS6G2933S-130_2 BLS6G2933S-130_1 Document ID BLS6G2933S-130_3 Modifications: BLS6G2933S-130_2 BLS6G2933S-130_1 The status of the data sheet was changed to “Product data sheet”. BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 9 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Product data sheet Rev. 03 — 3 March 2010 10 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLS6G2933S-130_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 3 March 2010 11 of 12 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 March 2010 Document identifier: BLS6G2933S-130_3