BLS6G3135-120_08

BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 3.1 to 3.5 VDS (V) 32 PL (W) 120 Gp (dB) 11 ηD (%) 43 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (3.1 GHz to 3.5 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 1.3 Applications I S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLS6G3135-120 (SOT502A) 1 3 2 2 3 sym112 1 BLS6G3135S-120 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Package Name BLS6G3135-120 Description Version flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads earless flanged LDMOST ceramic package; 2 leads SOT502B Type number BLS6G3135S-120 - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Min −0.5 −65 Max 60 +13 7.2 +150 225 Unit V V A °C °C BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 2 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 5. Thermal characteristics Table 5. Zth(j-mb) Thermal characteristics Conditions Tcase = 85 °C; PL = 120 W tp = 300 µs; δ = 10 % tp = 100 µs; δ = 20 % 0.29 0.40 K/W 0.30 0.41 K/W Typ Max Unit transient thermal impedance from junction to mounting base Symbol Parameter 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 180 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 8.3 V; VDS = 0 V VDS = 10 V; ID = 9 A VGS = VGS(th) + 3.75 V; ID = 6.3 A Min 60 1.4 27 Typ 1.8 33 13 0.085 Max 2.3 5 450 Unit V V µA A nA S 0.160 Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol PL VCC Gp IRL PL(1dB) ηD tr tf Parameter output power supply voltage power gain input return loss output power at 1 dB gain compression drain efficiency rise time fall time PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W PL = 120 W Conditions Min 9.5 6 39 Typ 120 11 10 130 43 20 6 Max 32 50 50 Unit W V dB dB W % ns ns BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 3 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Typical impedance ZS Ω 2.7 − j5.4 3.3 − j4.7 4.2 − j4.4 5.2 − j4.8 5.7 − j6.2 ZL Ω 5.9 − j5.9 4.5 − j6.2 3.5 − j6.0 2.7 − j5.6 2.0 − j5.2 Table 8. f GHz 3.1 3.2 3.3 3.4 3.5 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G3135-120 and BLS6G3135S-120 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 300 µs; δ = 10 %. 001aag823 001aag824 13 Gp (dB) 11 ηD Gp 50 ηD (%) 40 14 Gp (dB) (1) (2) (3) 10 9 30 7 20 6 5 10 3 3 3.2 3.4 f (GHz) 0 3.6 2 0 40 80 120 PL (W) 160 VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %; PL = 120 W. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. Fig 2. Power gain and drain efficiency as functions of frequency; typical values Fig 3. Power gain as a function of load power; typical values BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 4 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 50 ηD (%) 40 001aag825 (1) (2) (3) 160 (2) 001aag826 PL (W) 120 (1) (3) 30 80 20 40 10 0 0 40 80 120 PL (W) 160 0 0 5 10 15 Pi (W) 20 (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %. Fig 4. Drain efficiency as a function of load power; typical values 13 Gp (dB) 11 ηD Gp 001aag827 Fig 5. Load power as a function of input power; typical values 14 Gp (dB) (1) 50 ηD (%) 40 001aag828 (2) (3) 10 9 30 7 20 6 5 10 3 3 3.2 3.4 f (GHz) 0 3.6 2 0 40 80 120 PL (W) 160 VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %; PL = 120 W. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. Fig 6. Power gain and drain efficiency as functions of frequency; typical values Fig 7. Power gain as a function of load power; typical values BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 5 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 50 ηD (%) 40 001aag829 (1) (2) 160 PL (W) 120 (2) 001aag830 (3) (1) (3) 30 80 20 40 10 0 0 40 80 120 PL (W) 160 0 0 5 10 15 Pi (W) 20 (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %. Fig 8. Drain efficiency as a function of load power; typical values Fig 9. Load power as a function of input power; typical values BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 6 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 8. Test information C3 + C5 C10 C12 C11 C13 + L1 C4 C6 +VGG R2 R1 λ / 4-line λ / 4-line C9 C8 +VDD C7 C1 C2 001aah591 Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.2 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 3.1 GHz to 3.5 GHz MHz test circuit Table 9. List of components (see Figure 10) To ensure good power supply of the device, adding an electrolytical capacitor close to the supply connection of the circuit may be required. The actual capacitor value may differ depending on the pulse format, the quality of the power supply and the length of the connecting wires to the power supply. In general a value of 470 µF will be sufficient. Component C1, C2, C4, C5, C6, C7, C8, C9, C11 C3 C10 C12 C13 L1 R1 R2 [1] [2] Description multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor copper wire resistor SMD resistor Value 24 pF 20 µF; 20 V 33 pF 1 nF 100 µF; 63 V 49.9 Ω 49.9 Ω [1] [2] [1] Remarks American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 700A or capacitor of same quality. BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 7 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A 3 D1 F U1 q C B c 1 L H U2 p w1 M A M B M E1 E A 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 0.067 1.100 0.057 OUTLINE VERSION SOT502A REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 Fig 11. Package outline SOT502A BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 8 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c L 1 H U2 E1 E 2 b w2 M D M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25 20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774 0.505 0.006 0.495 0.003 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.067 0.815 0.057 0.805 0.390 0.010 0.380 OUTLINE VERSION SOT502B REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 Fig 12. Package outline SOT502B BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 9 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 10. Abbreviations Table 10. Acronym LDMOS LDMOST RF S-Band VSWR Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Lateral Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Release date 20080529 Data sheet status Product data sheet Change notice Supersedes BLS6G3135-120_ 6G3135S-120_1 Document ID BLS6G3135-120_6G3135S-120_2 Modifications: BLS6G3135-120_6G3135S-120_1 • Section 8 on page 7: Component layout was added Preliminary data sheet - 20070814 BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 10 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 11 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 May 2008 Document identifier: BLS6G3135-120_6G3135S-120_2