BSR19

DISCRETE SEMICONDUCTORS DATA SHEET BSR19; BSR19A NPN high voltage transistors Product data sheet Supersedes data of 2004 Jan 13 2004 Mar 15 NXP Semiconductors Product data sheet NPN high voltage transistors FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • General purpose switching and amplification • Especially used for telephony applications. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BSR20 and BSR20A. MARKING TYPE NUMBER BSR19 BSR19A Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION TYPE NUMBER BSR19 BSR19A PACKAGE NAME − − DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads MARKING CODE(1) 56* or U35 57* or U36 Top view handbook, halfpage BSR19; BSR19A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 SOT23 2004 Mar 15 2 NXP Semiconductors Product data sheet NPN high voltage transistors QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSR19 BSR19A VCEO collector-emitter voltage BSR19 BSR19A ICM Ptot hFE peak collector current total power dissipation DC current gain BSR19 BSR19A fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V 60 80 100 open base − − − − open emitter − − CONDITIONS BSR19; BSR19A MIN. MAX. 160 180 140 160 600 250 − − 300 V V V V UNIT mA mW MHz LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO BSR19 BSR19A VCEO collector-emitter voltage BSR19 BSR19A VEBO IC ICM IB Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 140 160 6 300 600 100 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 160 180 V V MIN. MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER CONDITIONS VALUE 500 UNIT K/W thermal resistance from junction to ambient note 1 2004 Mar 15 3 NXP Semiconductors Product data sheet NPN high voltage transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO BSR19 ICBO collector cut-off current BSR19A IEBO hFE emitter cut-off current DC current gain BSR19 BSR19A DC current gain BSR19 BSR19A DC current gain BSR19 BSR19A VCEsat VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA collector-emitter saturation voltage IC = 50 mA; IB = 5 mA BSR19 BSR19A Cc fT collector capacitance transition frequency IE = 0 A; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz IC = 50 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IE = 0 A; VCB = 120 V IE = 0 A; VCB = 120 V; Tamb = 100 °C IC = 0 A; VEB = 4 V IC = 1 mA; VCE = 5 V PARAMETER collector cut-off current IE = 0 A; VCB = 100 V IE = 0 A; VCB = 100 V; Tamb = 100 °C CONDITIONS BSR19; BSR19A MIN. − − − − − 60 80 60 80 20 30 − − − − 100 MAX. 100 100 50 50 50 − − 250 250 − − 150 250 200 6 300 UNIT nA µA nA µA nA mV mV mV pF MHz 2004 Mar 15 4 NXP Semiconductors Product data sheet NPN high voltage transistors BSR19; BSR19A handbook, full pagewidth 160 MGD814 hFE 120 VCE = 5 V 80 40 0 10−1 1 10 102 IC mA 103 Fig.2 DC current gain; typical values. 2004 Mar 15 5 NXP Semiconductors Product data sheet NPN high voltage transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads BSR19; BSR19A SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 2004 Mar 15 6 NXP Semiconductors Product data sheet NPN high voltage transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION BSR19; BSR19A This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Mar 15 7 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp8 Date of release: 2004 Mar 15 Document order number: 9397 750 12911