BSR40

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BSR40; BSR41; BSR42; BSR43 NPN medium power transistors Product data sheet Supersedes data of 1999 Apr 28 2004 Dec 13 NXP Semiconductors Product data sheet NPN medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Thick and thin-film circuits • Telephony and general industrial applications. DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BSR30; BSR31 and BSR33. MARKING TYPE NUMBER BSR40 BSR41 MARKING CODE AR1 AR2 TYPE NUMBER BSR42 BSR43 MARKING CODE AR3 AR4 PINNING PIN 1 2 3 emitter collector base BSR40; BSR41; BSR42; BSR43 DESCRIPTION 2 3 1 sym042 3 2 1 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BSR40 BSR41 BSR42 BSR43 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Dec 13 2 NXP Semiconductors Product data sheet NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER collector-base voltage BSR40; BSR41 BSR42; BSR43 VCEO collector-emitter voltage BSR40; BSR41 BSR42; BSR43 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C; note 1 open collector open base CONDITIONS open emitter BSR40; BSR41; BSR42; BSR43 MIN. − − − − − − − − − −65 − −65 MAX. 70 90 60 80 5 1 2 0.2 1.35 +150 150 +150 V V V V V A A A W UNIT °C °C °C 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 93 13 UNIT K/W K/W 2004 Dec 13 3 NXP Semiconductors Product data sheet NPN medium power transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain BSR40; BSR42 BSR41; BSR43 DC current gain BSR40; BSR42 BSR41; BSR43 DC current gain BSR40; BSR42 BSR41; BSR43 VCEsat VBEsat Cc Ce fT ton toff Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.01. collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency CONDITIONS IE = 0 A; VCB = 60 V BSR40; BSR41; BSR42; BSR43 MIN. − − − 10 30 MAX. 100 50 100 − − 120 300 − − 250 500 1 1.2 12 90 − UNIT nA μA nA IE = 0 A; VCB = 60 V; Tj = 150 °C IC = 0 A; VEB = 5 V IC = 100 μA; VCE = 5 V; note 1 IC = 100 mA; VCE = 5 V; note 1 40 100 IC = 500 mA; VCE = 5 V; note 1 30 50 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IC = 150 mA; IB = 15 mA; note 1 IC = 500 mA; IB = 50 mA; note 1 IE = ie = 0 A; VCB = 10 V; f = 1 MHz IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz IC = 50 mA; VCE = 10 V; f = 100 MHz ICon = 100 mA; IBon = 5 mA; IBoff = −5 mA − − − − − − 100 − − mV mV V V pF pF MHz Switching times (between 10% and 90% levels) turn-on time turn-off time 250 1 ns μs 2004 Dec 13 4 NXP Semiconductors Product data sheet NPN medium power transistors PACKAGE OUTLINE BSR40; BSR41; BSR42; BSR43 Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 2004 Dec 13 5 NXP Semiconductors Product data sheet NPN medium power transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production BSR40; BSR41; BSR42; BSR43 DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Dec 13 6 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp7 Date of release: 2004 Dec 13 Document order number: 9397 750 13874