BSR56,215

BSR56; BSR57; BSR58 N-channel FETs Rev. 3 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. 1.2 Features and benefits  Interchangeable drain and source connections  Small package 1.3 Applications  Low-power, chopper or switching applications  Thick and thin-film circuits 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions BSR56 Min VDS drain-source voltage IDSS drain leakage current VGSoff Crs VDS = 15 V; VGS = 0 V; Tmb = 40 C Max BSR57 Min Max BSR58 Min Max Unit - 40 - 40 - 40 V - >50 - >20 - >8 mA - - - 2 - >0.8 - V