BSS83

BSS83 MOSFET N-channel enhancement switching transistor Rev. 03 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor DESCRIPTION Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. APPLICATIONS • analog and/or digital switch • switch driver PINNING 1 2 3 4 = substrate (b) = source = drain = gate Fig.1 Simplified outline and symbol. 1 Top view 2 MAM389 BSS83 Marking code: BSS83 = % M9 handbook, halfpage 4 3 d b g s Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 µA Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 0.1 mA Feed-back capacitance VGS = VBS = −15 V; VDS = 10 V; f = 1 MHz Crss typ. 0.6 pF RDSon < 45 Ω VGS(th) > < 0.1 V 2.0 V VDS VSD VDB VSB ID Ptot max. max. max. max. max. max. 10 V 10 V 15 V 15 V 50 mA 230 mW Rev. 03 - 21 November 2007 2 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Drain current (DC) Total power dissipation up to Tamb = 25 Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air(1) Rth j-a = °C(1) VDS VSD VDB VSB ID Ptot Tstg Tj max. max. max. max. max. max. max. 10 V 10 V 15 V 15 V BSS83 50 mA 230 mW 125 °C −65 to + 150 °C 430 K/W Rev. 03 - 21 November 2007 3 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified Drain-source breakdown voltage VGS = VBS = −5 V; ID = 10 nA Source-drain breakdown voltage VGD = VBD = −5 V; ID = 10 nA Drain-substrate breakdown voltage VGB = 0; ID = 10 nA; open source Source-substrate breakdown voltage VGB = 0; ID = 10 nA; open drain Drain-source leakage current VGS = VBS = −2 V; VDS = 6,6 V Source-drain leakage current VGD = VBD = −2 V; VSD = 6,6 V Forward transconductance at f = 1 kHz VDS = 10 V; VSB = 0; ID = 20 mA Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 µA Drain-source ON-resistance ID = 0,1 mA; VGS = 5 V; VSB = 0 VGS = 10 V; VSB = 0 VGS = 3,2 V; VSB = 6,8 V (see Fig.4) Gate-substrate zener voltages VDB = VSB = 0; −IG = 10 µA VDB = VSB = 0; +IG = 10 µA Capacitances at f = 1 MHz VGS = VBS = −15 V; VDS = 10 V Feed-back capacitance Input capacitance Output capacitance Switching times (see Fig.2) VDD = 10 V; Vi = 5 V ton toff Note 1. Device mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm. typ. typ. Crss Ciss Coss typ. typ. typ. VZ(1) VZ(2) > > RDSon RDSon RDSon < < typ. < VGS(th) > < gfs > typ. ISDoff < IDSoff < V(BR)SBO > V(BR)DBO > V(BR)SDX > V(BR)DSX > BSS83 10 V 10 V 15 V 15 V 10 nA 10 nA 10 mS 15 mS 0,1 V 2,0 V 70 Ω 45 Ω 80 Ω 120 Ω 12,5 V 12,5 V 0,6 pF 1,5 pF 1,0 pF 1,0 ns 5,0 ns Rev. 03 - 21 November 2007 4 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor Pulse generator: Ri tr tf tp δ = < < = < 50 Ω 0,5 ns 1,0 ns 20 ns 0,01 BSS83 handbook, full pagewidth VDD 50 Ω 0.1 µF Vo 630 Ω INPUT 90% 90% 10% tr tf ton 90% 10% toff 90% Vi 50 Ω T.U.T OUTPUT MBK297 10% 10% MBK296 Fig.2 Switching times test circuit and input and output waveforms. handbook, halfpage 60 MDA250 handbook, halfpage 1.2 MDA251 ID (mA) 40 VGS = 4.5 V 4V ID (mA) 0.8 3.5 V 3V VGS = 10 V 5V 4V 3.2 V 3V 20 2.5 V 2V 0.4 2V 0 0 4 8 VDS (V) 12 0 0 40 80 VDSon (mV) 120 Tj = 25 °C. Tj = 25 °C. Fig.3 VSB = 0; typical values. Fig.4 VSB = 6,8 V; typical values. Rev. 03 - 21 November 2007 5 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 handbook, halfpage 50 MDA252 ID (mA) 40 handbook, halfpage 12 MDA253 ID (mA) 8 VSB = 0 V 4 V 12 V 8V 30 20 4 10 0 0 1 2 3 VGS (V) 4 0 0 1 2 3 VGSth (V) 4 Tj = 25 °C. Tj = 25 °C. Fig.5 VDS = 10 V; VBS = 0; typical values. Fig.6 VDS = VGS = VGS(th). handbook, halfpage 1.2 MDA254 ID (mA) 0.8 VGS = 10 V 5 V 4 V 3V 2V 0.4 0 0 20 40 60 80 100 VDSon (mV) Tj = 25 °C. Fig.7 VSB = 0; typical values. Rev. 03 - 21 November 2007 6 of 9 NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor PACKAGE OUTLINE Plastic surface mounted package; 4 leads BSS83 SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 03 - 21 November 2007 7 of 9 NXP Semiconductors BSS83 MOSFET N-channel enhancement switching transistor Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 03 - 21 November 2007 8 of 9 NXP Semiconductors BSS83 MOSFET N-channel enhancement switching transistor Revision history Revision history Document ID BSS83_N_3 Modifications: BSS83_CNV_2 Release date 20071121 Data sheet status Product data sheet Product specification Change notice Supersedes BSS83_CNV_2 - • Page 2; column 2; Marking code; row 1 changed 19910401 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 November 2007 Document identifier: BSS83_N_3