BST39

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BST39; BST40 NPN high-voltage transistors Product data sheet Supersedes data of 2000 Jul 03 2004 Dec 14 NXP Semiconductors Product data sheet NPN high-voltage transistors FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. MARKING TYPE NUMBER BST39 BST40 MARKING CODE AT1 AT2 3 2 1 BST39; BST40 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 sym042 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BST39 BST40 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Dec 14 2 NXP Semiconductors Product data sheet NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO BST39 BST40 VCEO collector-emitter voltage BST39 BST40 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − BST39; BST40 MIN. MAX. 400 300 350 250 5 100 200 100 1.3 +150 150 +150 V V V V V UNIT mA mA mA W °C °C °C 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cc fT PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain collector capacitance transition frequency CONDITIONS IE = 0 A; VCB = 300 V IC = 0 A; VEB = 5 V IC = 20 mA; VCE = 10 V IE = ie = 0 A; VCB = 10 V; f = 1 MHz − − 40 − − MIN. MAX. 20 100 − 500 2 − mV pF MHz UNIT nA nA PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 96 16 UNIT K/W K/W collector-emitter saturation voltage IC = 50 mA; IB = 4 mA IC = 10 mA; VCE = 10 V; f = 100 MHz 70 2004 Dec 14 3 NXP Semiconductors Product data sheet NPN high-voltage transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads BST39; BST40 SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 2004 Dec 14 4 NXP Semiconductors Product data sheet NPN high-voltage transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION BST39; BST40 This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Dec 14 5 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp6 Date of release: 2004 Dec 14 Document order number: 9397 750 13876