BST62

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BST60; BST61; BST62 PNP Darlington transistors Product data sheet Supersedes data of 2001 Feb 20 2004 Dec 09 NXP Semiconductors Product data sheet PNP Darlington transistors FEATURES • High current (max. 0.5 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. PINNING PIN 1 2 3 BST60; BST61; BST62 DESCRIPTION emitter collector base 2 3 DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complements: BST50, BST51 and BST52. MARKING TYPE NUMBER BST60 BST61 BST62 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BST60 BST61 BST62 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 MARKING CODE BS1 BS2 BS3 Fig.1 Simplified outline (SOT89) and symbol. 3 2 1 1 sym081 2004 Dec 09 2 NXP Semiconductors Product data sheet PNP Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO BST60 BST61 BST62 VCES collector-emitter voltage BST60 BST61 BST62 VEBO IC ICM IB Ptot Tstg Tj Tamb Note emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 V PARAMETER collector-base voltage CONDITIONS open emitter BST60; BST61; BST62 MIN. − − − − − − − − − − − −65 − −65 MAX. −60 −80 −90 −45 −60 −80 −5 −1 −2 −100 1.3 +150 150 +150 V V V V V V V A A UNIT mA W °C °C °C 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 96 16 UNIT K/W K/W 2004 Dec 09 3 NXP Semiconductors Product data sheet PNP Darlington transistors CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER collector-emitter cut-off current BST60 BST61 BST62 IEBO hFE emitter-base cut-off current DC current gain VBE = 0 V; VCE = −45 V VBE = 0 V; VCE = −60 V VBE = 0 V; VCE = −80 V IC = 0 A; VEB = −4 V VCE = −10 V; note 1; see Fig.2 IC = −150 mA IC = −500 mA VCEsat collector-emitter saturation voltage base-emitter saturation voltage transition frequency IC = −500 mA; IB = −0.5 mA IC = −500 mA; IB = −0.5 mA; Tj = 150 °C IC = −500 mA; IB = −0.5 mA IC = −500 mA; VCE = −5 V; f = 100 MHz ICon = −500 mA; IBon = −0.5 mA; IBoff = 0.5 mA CONDITIONS BST60; BST61; BST62 MIN. − − − − 1 000 2 000 − − − − TYP. − − − − − − − − − 200 MAX. −50 −50 −50 −50 − − −1.3 −1.3 −1.9 − UNIT nA nA nA nA V V V MHz VBEsat fT Switching times (between 10% and 90% levels); (see Fig.3) ton toff Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. turn-on time turn-off time − − 500 700 − − ns ns 2004 Dec 09 4 NXP Semiconductors Product data sheet PNP Darlington transistors BST60; BST61; BST62 handbook, full pagewidth 6000 MGD839 hFE 5000 4000 3000 2000 1000 0 −10−1 VCE = −10 V. −1 −10 −102 IC (mA) −103 Fig.2 DC current gain; typical values. handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MGD624 Vi = −10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = 1.8 V; VCC = −10.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 2004 Dec 09 5 NXP Semiconductors Product data sheet PNP Darlington transistors PACKAGE OUTLINE BST60; BST61; BST62 Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 2004 Dec 09 6 NXP Semiconductors Product data sheet PNP Darlington transistors DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production BST60; BST61; BST62 DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this 2004 Dec 09 7 document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp8 Date of release: 2004 Dec 09 Document order number: 9397 750 13878