BT1308W-400D

BT1308W series D Triacs logic level Rev. 01 — 27 February 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate triacs in a SOT223 surface-mountable plastic package 1.2 Features I Sensitive gate I Direct interfacing to logic level ICs I Gate triggering in four quadrants I Direct interfacing to low-power gate drive circuits 1.3 Applications I General purpose switching and phase control I Low-power AC fan speed controllers 1.4 Quick reference data I VDRM ≤ 400 V (BT1308W-400D) I VDRM ≤ 600 V (BT1308W-600D) I ITSM ≤ 9 A (t = 20 ms) I IGT ≤ 5 mA I IGT ≤ 7 mA (T2− G+) I IT(RMS) ≤ 0.8 A 2. Pinning information Table 1. Pin 1 2 3 4 Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base; main terminal 2 (T2) 1 2 3 4 T2 sym051 Simplified outline Graphic symbol T1 G SOT223 NXP Semiconductors BT1308W series D Triacs logic level 3. Ordering information Table 2. Ordering information Package Name BT1308W-400D BT1308W-600D SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM IT(RMS) ITSM Parameter repetitive peak off-state voltage RMS on-state current Conditions BT1308W-400D BT1308W-600D full sine wave; Tsp ≤ 107.4 °C; see Figure 4 and 5 Min Max 400 600 0.8 Unit V V A non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms over any 20 ms period −40 9 10 0.32 50 50 50 10 1 5 0.1 +150 125 A A A2s A/µs A/µs A/µs A/µs A W W °C °C I2t dIT/dt I2t for fusing rate of rise of on-state current tp = 10 ms ITM = 1 A; IG = 20 mA; dIG/dt = 0.2 A/µs T2+ G+ T2+ G− T2− G− T2− G+ IGM PGM PG(AV) Tstg Tj peak gate current peak gate power average gate power storage temperature junction temperature BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 2 of 13 NXP Semiconductors BT1308W series D Triacs logic level 1.2 Ptot (W) 003aac209 conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 α = 180° 120° 90° α 0.8 60° 30° 0.4 0.0 0 0.2 0.4 0.6 0.8 IT(RMS) (A) 1 α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aac207 12 ITSM (A) 8 4 IT ITSM t 1/f Tj(init) = 25 °C max 0 1 10 102 number of cycles 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 3 of 13 NXP Semiconductors BT1308W series D Triacs logic level 103 ITSM (A) IT 003aac208 ITSM t tp Tj(init) = 25 °C max 102 (1) (2) 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit (2) T2− G+ quadrant limit Fig 3. 6 IT(RMS) (A) Non-repetitive peak on-state current as a function of pulse width; maximum values 003aab489 1 IT(RMS) (A) 0.8 003aab487 4 0.6 0.4 2 0.2 0 10-2 10-1 1 10 surge duration (s) 0 -50 0 50 100 Tsp (°C) 150 f = 50 Hz Tsp = 107.4 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of solder point temperature; maximum values BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 4 of 13 NXP Semiconductors BT1308W series D Triacs logic level 5. Thermal characteristics Table 4. Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions full cycle; see Figure 6 full cycle for minimum footprint; see Figure 13 for pad area; see Figure 14 156 70 K/W K/W Min Typ Max 15 Unit K/W 102 Zth(j-sp) (K/W) 10 003aac210 1 P 10-1 tp t 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to solder point as a function of pulse width BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 5 of 13 NXP Semiconductors BT1308W series D Triacs logic level 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol IGT Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G− T2− G− T2− G+ IL latching current VD = 12 V; IG = 0.1 A; see Figure 10 T2+ G+ T2+ G− T2− G− T2− G+ IH VT VGT ID dVD/dt dVcom/dt tgt holding current on-state voltage gate trigger voltage off-state current VD = 12 V; IG = 0.1 A; see Figure 11 IT = 0.85 A; see Figure 9 VD = 12 V; IT = 0.1 A; see Figure 7 VD = VDRM; IT = 0.1 A; Tj = 110 °C VD = VDRM(max); Tj = 125 °C Dynamic characteristics rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 110 °C; exponential waveform; gate open circuit rate of change of commutating voltage gate-controlled turn-on time VDM = VDRM(max); Tj = 50 °C; ITM = 0.84 A; dIcom/dt = 0.3 A/ms ITM = 1 A; VD = VDRM(max); IG = 25 mA; dIG/dt = 5 A/µs 30 45 5 2 V/µs V/µs µs 0.1 1 5 1 2 1 1.35 0.9 0.7 0.1 10 10 10 10 10 1.6 2 0.5 mA mA mA mA mA V V V mA 1 2 2 4 5 5 5 7 mA mA mA mA Min Typ Max Unit Static characteristics BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 6 of 13 NXP Semiconductors BT1308W series D Triacs logic level 1.6 VGT VGT(25°C) 1.2 003aaa039 3 IGT IGT(25°C) (1) (2) (3) (4) (1) (2) (3) (4) 003aaa030 2 0.8 1 0.4 0 −60 −10 40 90 Tj (°C) 140 0 −60 −10 40 90 Tj (°C) 140 (1) T2+ G+ (2) T2− G+ (3) T2− G− (4) T2+ G− Fig 7. Normalized gate trigger voltage as a function of junction temperature 003aab486 Fig 8. Normalized gate trigger current as a function of junction temperature 3 003aaa031 1.6 IT (A) 1.2 IL IL(25°C) 2 0.8 1 (1) (2) (3) 0.4 0 0 0.4 0.8 1.2 1.6 VT (V) 2 0 −60 −10 40 90 Tj (°C) 140 Vo = 1.171 V Rs = 0.5125 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 7 of 13 NXP Semiconductors BT1308W series D Triacs logic level 2.0 IH IH(25°C) 1.5 003aaa032 1.0 0.5 0 −60 −10 40 90 Tj (°C) 140 Fig 11. Normalized holding current as a function of junction temperature BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 8 of 13 NXP Semiconductors BT1308W series D Triacs logic level 7. Package outline Plastic surface-mounted package with increased heatsink; 4 leads SOT223 D B E A X c y HE b1 vMA 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 04-11-10 06-03-16 Fig 12. Package outline SOT223 (SC-73) BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 9 of 13 NXP Semiconductors BT1308W series D Triacs logic level 8. Mounting 3.8 min 1.5 min 6.3 1.5 min (3×) 1.5 min 4.6 001aab508 2.3 All dimensions are in mm. Fig 13. Minimum footprint SOT223 36 18 60 9 4.6 4.5 10 7 15 50 001aab509 All dimensions are in mm. Printed circuit board: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). Fig 14. Printed circuit board pad area SOT223 BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 10 of 13 NXP Semiconductors BT1308W series D Triacs logic level 9. Revision history Table 6. Revision history Release date 20080227 Data sheet status Product data sheet Change notice Supersedes Document ID BT1308W_SER_D_1 BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 11 of 13 NXP Semiconductors BT1308W series D Triacs logic level 10. Legal information 10.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BT1308W_SER_D_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 27 February 2008 12 of 13 NXP Semiconductors BT1308W series D Triacs logic level 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 February 2008 Document identifier: BT1308W_SER_D_1