BT149G,412

TO -92 BT149G SCR 13 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits. 2. Features and benefits • • • • Enhanced voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate Direct triggering from low power drivers and logic ICs 3. Applications • General purpose switching and phase control 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V VRRM repetitive peak reverse voltage - - 600 V ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 - - 8 A IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 - - 0.5 A IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; - - 0.8 A - 50 200 µA Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BT149G NXP Semiconductors SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode 2 G gate 3 A anode Graphic symbol A K G sym037 321 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number BT149G BT149G Product data sheet Package Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 BT149G NXP Semiconductors SCR 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Conditions Min Max Unit repetitive peak off-state voltage - 600 V VRRM repetitive peak reverse voltage - 600 V IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 - 0.5 A IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; - 0.8 A - 8 A - 9 A Fig. 3 ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms I t I t for fusing tp = 10 ms; SIN - 0.32 A s dIT/dt rate of rise of on-state current IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/ - 50 A/µs 2 2 2 µs IGM peak gate current - 1 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 2 W PG(AV) average gate power - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period 001aab446 0.8 a = 1.57 Ptot (W) 1.9 0.6 77 Tlead(max) (°C) 89 2.2 2.8 0.4 4 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 0.2 0 0 0.1 0.2 0.3 0.4 101 α 0.5 IT(AV) (A) 113 125 0.6 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 1. Total power dissipation as a function of average on-state current; maximum values BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 13 BT149G NXP Semiconductors SCR 001aab449 2 001aab450 1 IT(RMS) (A) IT(RMS) (A) 83 °C 0.8 1.5 0.6 1 0.4 0.5 0.2 0 10-2 10-1 0 -50 1 10 surge duration (s) f = 50 Hz; Tlead = 83 °C Fig. 2. Fig. 3. RMS on-state current as a function of surge duration for sinusoidal currents 0 50 100 150 Tlead (°C) RMS on-state current as a function of lead temperature; maximum values 001aab499 10 ITSM (A) 8 6 4 IT ITSM 2 0 t tp Tj(init) = 25 °C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 13 BT149G NXP Semiconductors SCR 001aab497 103 IT ITSM (A) ITSM t tp Tj(init) = 25 °C max 102 10 1 10-5 10-4 10-3 tp (s) 10-2 tp ≤ 10 ms Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 13 BT149G NXP Semiconductors SCR 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-lead) thermal resistance from junction to lead Fig. 6 - - 60 K/W Rth(j-a) thermal resistance from junction to ambient printed circuit board mounted: lead length = 4 mm - 150 - K/W 001aab451 102 Zth(j-lead) (K/W) 10 1 P 10-1 tp 10-2 10-5 Fig. 6. 10-4 10-3 10-2 10-1 1 tp (s) t 10 Transient thermal impedance from junction to lead as a function of pulse width BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 13 BT149G NXP Semiconductors SCR 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 10 mA; Tj = 25 °C; - 50 200 µA - 2 6 mA - 2 5 mA Static characteristics IGT gate trigger current Fig. 7 IL latching current VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ; Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; RGK = 1 kΩ; Tj = 25 °C; Fig. 9 VT on-state voltage IT = 1.2 A; Tj = 25 °C; Fig. 10 - 1.25 1.7 V VGT gate trigger voltage VD = 12 V; IT = 10 mA; Tj = 25 °C; - 0.5 0.8 V 0.2 0.3 - V Fig. 11 VD = 600 V; IT = 10 mA; Tj = 125 °C; Fig. 11 ID off-state current VD = 600 V; Tj = 125 °C; RGK = 1 kΩ - 0.05 0.1 mA IR reverse current VR = 600 V; Tj = 125 °C; RGK = 1 kΩ - 0.05 0.1 mA VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ; 500 800 - V/µs - 2 - V/µs Dynamic characteristics dVD/dt rate of rise of off-state voltage (VDM = 67% of VDRM); exponential waveform; Fig. 12 VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12 tgt gate-controlled turn-on ITM = 2 A; VD = 600 V; IG = 10 mA; dIG/ time dt = 0.1 A/µs; Tj = 25 °C - 2 - µs tq commutated turn-off time - 100 - µs VDM = 402 V; Tj = 125 °C; ITM = 1.6 A; VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/ dt = 2 V/µs; RGK = 1 kΩ; (VDM = 67% of VDRM) BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 13 BT149G NXP Semiconductors SCR 001aab502 3 IGT IGT(25°C) IL IL(25°C) 2 2 1 1 0 -50 Fig. 7. 001aab503 3 0 50 100 Tj (°C) 0 -50 150 Normalized gate trigger current as a function of junction temperature Fig. 8. 001aab504 3 0 50 100 Tj (°C) 150 RGK = 1 kΩ Normalized latching current as a function of junction temperature 001aab454 5 IT (A) IH 4 IH(25°C) 2 3 2 1 1 0 -50 0 50 100 Tj (°C) 0 0.4 150 RGK = 1 kΩ Fig. 9. (1) (2) 1.2 (3) 2 VT (V) 2.8 Vo = 1.067 V; Rs = 0.187 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 13 BT149G NXP Semiconductors SCR 001aab501 1.6 001aab507 104 VGT VGT(25°C) dVD/dt (V/µs) 1.2 103 0.8 102 (1) (2) 0.4 -50 0 50 100 Tj (°C) 10 150 0 50 100 Tj (°C) 150 (1) RGK = 1 kΩ Fig. 11. Normalized gate trigger voltage as a function of junction temperature (2) gate open circuit Fig. 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 13 BT149G NXP Semiconductors SCR 10. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig. 13. Package outline TO-92 (SOT54) BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 10 / 13 BT149G NXP Semiconductors SCR In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. 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BT149G Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................6 9 Characteristics ....................................................... 7 10 Package outline ................................................... 10 11 11.1 11.2 11.3 11.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 March 2014 BT149G Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved 13 / 13