BT151S-650R

BT151S series L and R Thyristors Rev. 05 — 9 October 2006 Product data sheet 1. Product profile 1.1 General description Passivated thyristors in a SOT428 plastic package. 1.2 Features I High thermal cycling performance I High bidirectional blocking voltage capability I Surface-mounted package 1.3 Applications I Motor control I Ignition circuits I Static switching I Protection circuits 1.4 Quick reference data I I I I I I VDRM ≤ 500 V (BT151S-500L/R) VRRM ≤ 500 V (BT151S-500L/R) VDRM ≤ 650 V (BT151S-650L/R) VRRM ≤ 650 V (BT151S-650L/R) VDRM ≤ 800 V (BT151S-800R) VRRM ≤ 800 V (BT151S-800R) I I I I I ITSM ≤ 120 A (t = 10 ms) IT(RMS) ≤ 12 A IT(AV) ≤ 7.5 A IGT ≤ 5 mA (BT151S series L) IGT ≤ 15 mA (BT151S series R) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description cathode (K) anode (A) gate (G) mounting base; connected to anode 2 1 3 mb A G sym037 Simplified outline Symbol K SOT428 (DPAK) NXP Semiconductors BT151S series L and R Thyristors 3. Ordering information Table 2. Ordering information Package Name BT151S-500L BT151S-500R BT151S-650L BT151S-650R BT151S-800R DPAK Description Version plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM Parameter repetitive peak off-state voltage Conditions BT151S-500L; BT151S-500R BT151S-650L; BT151S-650R BT151S-800R VRRM repetitive peak reverse voltage BT151S-500L; BT151S-500R BT151S-650L; BT151S-650R BT151S-800R IT(AV) IT(RMS) ITSM average on-state current RMS on-state current non-repetitive peak on-state current half sine wave; Tmb ≤ 103 °C; see Figure 1 all conduction angles; see Figure 4 and 5 half sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 10 ms t = 8.3 ms I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj [1] [1] [1] [1] [1] Min - Max 500 650 800 500 650 800 7.5 12 Unit V V V V V V A A - 120 132 72 50 2 5 5 0.5 +150 125 A A A2s A/µs A V W W °C °C I2t for fusing t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs rate of rise of on-state current peak gate current peak reverse gate voltage peak gate power average gate power storage temperature junction temperature over any 20 ms period −40 - Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/µs. BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 2 of 13 NXP Semiconductors BT151S series L and R Thyristors 15 Ptot (W) 2.2 10 2.8 4 conduction angle (degrees) 30 60 90 120 180 0 0 2 4 6 IT(AV) (A) form factor a 4 2.8 2.2 1.9 1.57 001aab019 98 Tmb(max) (°C) 107 a= 1.57 1.9 5 116 α 125 8 Form factor a = IT(RMS)/IT(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values 160 ITSM (A) 120 t tp Tj initial = 25 °C max IT 001aaa957 ITSM 80 40 0 1 10 102 n 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 3 of 13 NXP Semiconductors BT151S series L and R Thyristors 103 001aaa956 ITSM (A) dlT/dt limit 102 IT ITSM t tp Tj initial = 25 °C max 10 10−5 10−4 10−3 tp (s) 10−2 tp ≤ 10 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 001aaa954 25 IT(RMS) (A) 20 16 IT(RMS) (A) 12 001aaa998 15 8 10 4 5 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 Tmb (°C) 150 f = 50 Hz; Tmb ≤ 103 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 4 of 13 NXP Semiconductors BT151S series L and R Thyristors 5. Thermal characteristics Table 4. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 6 mounted on an FR4 printed-circuit board; see Figure 14 Min Typ 75 Max 1.8 Unit K/W K/W 10 Zth(j-mb) (K/W) 001aaa963 1 10−1 P δ= tp T 10−2 tp T t 10−3 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 5 of 13 NXP Semiconductors BT151S series L and R Thyristors 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise stated. Symbol IGT Parameter gate trigger current Conditions VD = 12 V; IT = 100 mA; see Figure 8 BT151S-500L BT151S-500R BT151S-650L BT151S-650R BT151S-800R IL IH VT VGT latching current holding current on-state voltage gate trigger voltage VD = 12 V; IGT = 100 mA; see Figure 10 VD = 12 V; IGT = 100 mA; see Figure 11 IT = 23 A; see Figure 9 IT = 100 mA; VD = 12 V; see Figure 7 IT = 100 mA; VD = VDRM(max); Tj = 125 °C ID IR dVD/dt off-state current reverse current rate of rise of off-state voltage VD = VDRM(max); Tj = 125 °C VR = VRRM(max); Tj = 125 °C VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; see Figure 12 RGK = 100 Ω gate open circuit tgt tq gate-controlled turn-on time commutated turn-off time ITM = 40 A; VD = VDRM(max); IG = 100 mA; dIG/dt = 5 A/µs VDM = 0.67 × VDRM(max); Tj = 125 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω 200 50 1000 130 2 70 V/µs V/µs µs µs 0.25 2 2 2 2 2 10 7 1.4 0.6 0.4 0.1 0.1 5 15 5 15 15 40 20 1.75 1.5 0.5 0.5 mA mA mA mA mA mA mA V V V mA mA Min Typ Max Unit Static characteristics Dynamic characteristics BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 6 of 13 NXP Semiconductors BT151S series L and R Thyristors 1.6 VGT VGT(25°C) 1.2 001aaa953 3 IGT IGT(25°C) 2 001aaa952 0.8 1 0.4 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 Fig 7. Normalized gate trigger voltage as a function of junction temperature 001aaa959 Fig 8. Normalized gate trigger current as a function of junction temperature 3 IL IL(25°C) 2 001aaa951 30 IT (A) 20 (1) (2) (3) 10 1 0 0 0.5 1 1.5 VT (V) 2 0 −50 0 50 100 Tj (°C) 150 Vo = 1.06 V Rs = 0.0304 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 7 of 13 NXP Semiconductors BT151S series L and R Thyristors 3 IH IH(25°C) 2 001aaa950 104 dVD/dt (V/µs) 103 (1) 001aaa949 (2) 1 102 0 −50 10 0 50 100 Tj (°C) 150 0 50 100 Tj (°C) 150 (1) RGK = 100 Ω (2) Gate open circuit Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 8 of 13 NXP Semiconductors BT151S series L and R Thyristors 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E b2 A A1 A E1 mounting base D1 HD D2 2 L2 1 3 L L1 b1 e e1 b w M A c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.93 0.46 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.00 c 0.56 0.20 D1 6.22 5.98 D2 min 4.0 E 6.73 6.47 E1 min 4.45 e 2.285 e1 4.57 HD 10.4 9.6 L 2.95 2.55 L1 min 0.5 L2 0.9 0.5 w 0.2 y max 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 13. Package outline SOT428 (DPAK) BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 9 of 13 NXP Semiconductors BT151S series L and R Thyristors 8. Mounting 7.0 7.0 2.15 1.5 2.5 4.57 001aab021 Plastic meets requirements of UL94 V-O at 3.175 mm Fig 14. SOT428: minimum pad size for surface-mounting BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 10 of 13 NXP Semiconductors BT151S series L and R Thyristors 9. Revision history Table 6. Revision history Release date 20061009 Data sheet status Product data sheet Change notice Supersedes BT151S_SERIES_4 Document ID BT151S_SER_L_R_5 Modifications: • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Added type numbers BT151S-500L and BT151S-650L Product specification Product specification Product specification Product specification BT151S_SERIES_3 BT151S_SERIES_2 BT151S_SERIES_1 - BT151S_SERIES_4 (9397 750 13161) BT151S_SERIES_3 BT151S_SERIES_2 BT151S_SERIES_1 20040609 20020101 19990601 19970901 BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 11 of 13 NXP Semiconductors BT151S series L and R Thyristors 10. Legal information 10.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 12 of 13 NXP Semiconductors BT151S series L and R Thyristors 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 October 2006 Document identifier: BT151S_SER_L_R_5