BT258X-500R,127

DISCRETE SEMICONDUCTORS DATA SHEET BT258X series Thyristors logic level Product specification October 2002 NXP Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - SOT186A PIN BT258X series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT BT258XRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current 500R 500 600R 600 800R 800 V 5 8 75 5 8 75 5 8 75 A A A PIN CONFIGURATION SYMBOL DESCRIPTION case 1 cathode 2 anode 3 gate a k g 1 2 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj Average on-state current RMS on-state current Non-repetitive peak on-state current half sine wave; Ths ≤ 90 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MIN. MAX. UNIT - -500R -600R -800R 5001 6001 800 V - 5 8 A A - 75 82 28 50 A A A2s A/µs -40 - 2 5 5 0.5 150 1252 A V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. October 2002 1 Rev 2.000 NXP Semiconductors Product specification Thyristors logic level BT258X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 5.0 6.9 - K/W K/W K/W MIN. TYP. MAX. UNIT 0.1 - 50 0.4 0.3 1.3 0.4 0.2 0.1 200 10 6 1.6 1.5 0.5 µA mA mA V V V mA MIN. TYP. MAX. UNIT 50 100 - V/µs - 2 - µs - 100 - µs THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air Rth j-a STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 16 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 100 Ω ITM = 10 A; VD = VDRM(max); IG = 5 mA; dIG/dt = 0.2 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ tgt tq October 2002 2 Rev 2.000 NXP Semiconductors Product specification Thyristors logic level BT258X series Ptot (W) Ths(max) (˚C) 85 a = 1.57 90 8 conduction angle degrees 30 60 90 120 180 6 form factor (a) 1.9 4 2.8 2.2 1.9 1.57 2.2 2.8 4 4 2 0 0 4 2 IT(AV) (A) I TSM 70 IT 95 60 100 50 time T Tj initial = 25 C max 105 40 110 30 115 20 120 10 125 0 6 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 ITSM / A 80 1 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. ITSM / A 24 IT(RMS) / A 20 16 dI T/dt limit 100 12 I TSM IT 8 time T 4 Tj initial = 25 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 9 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 90˚C. IT(RMS) / A 1.6 90 C 8 10 VGT(Tj) VGT(25 C) 1.4 7 6 1.2 5 4 1 3 0.8 2 0.6 1 0 -50 0 50 Ths / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Ths. October 2002 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 2.000 NXP Semiconductors Product specification Thyristors logic level 3 BT258X series IGT(Tj) IGT(25 C) I /A 30 T Tj = 125 °C Tj = 25 °C 2.5 20 2 1.5 typ 10 1 max Vo = 1 V Rs = 0.04 Ω 0.5 0 -50 0 0 50 Tj / C 100 150 3 0.5 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. IL(Tj) IL(25 C) 0 10 BT150 Zth j-hs (K/W) without heatsink compound 2.5 with heatsink compound 1 2 1.5 0.1 1 P D t p t 0.5 0 -50 0 50 Tj / C 100 0.01 10us 150 1ms 10ms 0.1s 1s 10s tp / s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp. IH(Tj) IH(25 C) 1000 dVD/dt (V/us) RGK = 100 ohms 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. October 2002 0 Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. 4 Rev 2.000 NXP Semiconductors Product specification Thyristors logic level BT258X series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 max. 19 max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.13. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 2002 5 Rev 2.000 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. 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