BTA410X-600CT,127

TO -2 20F BTA410X-600CT 3Q Hi-Com Triac Rev. 1 — 13 March 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 1.2 Features and benefits  3Q technology for improved noise immunity  High voltage capability  High commutation capability with maximum false trigger immunity  Less sensitive gate for high noise immunity  High immunity to false turn-on by dV/dt  Planar passivated for voltage ruggedness and reliability  High junction operating temperature capability  Isolated mounting base package  Triggering in three quadrants only 1.3 Applications  Applications subject to high temperature  Motor controls e.g. washing machines and vacuum cleaners  Industrial and domestic heating circuits  Rectifier-fed DC inductive loads e.g. DC motors and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak off-state voltage ITSM non-repetitive peak on-state current Tj junction temperature IT(RMS) RMS on-state current Conditions full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 full sine wave; Th ≤ 98 °C; see Figure 1; see Figure 2; see Figure 3 Min Typ Max Unit - - 600 V - - 100 A - - 150 °C - - 10 A BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 2 - 35 mA VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 2 - 35 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 2 - 35 mA Static characteristics gate trigger current IGT Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 8 - - A/ms 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated mb Graphic symbol T2 T1 G sym051 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number BTA410X-600CT BTA410X-600CT Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 2 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage - 600 V IT(RMS) RMS on-state current full sine wave; Th ≤ 98 °C; see Figure 1; see Figure 2; see Figure 3 - 10 A ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 - 100 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 110 A I2t I2t tp = 10 ms; sine-wave pulse - 50 A2s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C for fusing over any 20 ms period 003aaj334 12 003aaj336 100 IT(RMS) 98 °C (A) IT(RMS) (A) 80 8 60 40 4 20 0 -50 0 0 50 100 150 10-2 Th (°C) Fig 1. RMS on-state current as a function of heatsink temperature; maximum values BTA410X-600CT Product data sheet Fig 2. 10-1 1 10 surge duration (s) RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 3 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 003aaj338 15 Ptot (W) 12 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 9 Th(max) (°C) 102 α = 180° 120° α 90 90° 114 60° 30° 6 126 3 138 150 12.5 0 0 2.5 5 7.5 10 IT(RMS) (A) Fig 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaj340 120 ITSM (A) 100 80 60 ITSM IT 40 t 20 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles (n) Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA410X-600CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 4 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 003aaj341 103 ITSM (A) (1) 102 ITSM IT t tp Tj(init) = 25 °C max 10 10-5 Fig 5. 10-4 10-3 10-2 tp (s) 10-1 Non-repetitive peak on-state current as a function of pulse duration; maximum values BTA410X-600CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 5 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full cycle or half cycle; with heatsink compound; see Figure 6 - - 4 K/W full cycle or half cycle; without heatsink compound; see Figure 6 - - 5.5 K/W in free air - 55 - K/W Rth(j-a) thermal resistance from junction to ambient 003aaj342 10 Zth(j-h) (K/W) (1) (2) 1 (3) (4) 10-1 P 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink ; f = 1 MHz; Th = 25 °C - 10 - pF BTA410X-600CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 6 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 7. Characteristics Table 7. Symbol Characteristics Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 2 - 35 mA VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 2 - 35 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 2 - 35 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 8 - - 50 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 8 - - 60 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; see Figure 8 - - 50 mA VD = 12 V; Tj = 25 °C; see Figure 9 - - 35 mA Static characteristics IGT IL gate trigger current latching current IH holding current VT on-state voltage IT = 15 A; Tj = 25 °C; see Figure 10 - 1.3 1.6 V VGT gate trigger voltage VD = 12 V; Tj = 25 °C; see Figure 11 - 0.8 1.5 V VD = 400 V; Tj = 150 °C; see Figure 11 0.25 0.4 - V VD = 600 V; Tj = 150 °C - 0.4 2 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 8 - - A/ms VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 10 V/µs; gate open circuit 13 - - A/ms VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 1 V/µs; gate open circuit 20 - - A/ms BTA410X-600CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 7 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 003aaj344 3 IGT IL IL(25°C) (1) IGT(25°C) 2 003aaj345 3 (2) 2 (3) 1 1 0 -50 0 50 100 Tj (°C) 0 -50 150 0 50 100 150 Tj (°C) (1) T2- G(2) T2+ G(3) T2+ G+ Fig 7. Normalized gate trigger current as a function of junction temperature 003aaj346 3 Fig 8. Normalized latching current as a function of junction temperature 003aaj347 40 IT (A) IH IH(25°C) 30 2 20 1 10 (1) 0 -50 (2) (3) 0 0 50 100 Tj (°C) 150 0 1 2 3 VT (V) Vo = 1.142 V; Rs = 0.027 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. Normalized holding current as a function of junction temperature BTA410X-600CT Product data sheet Fig 10. On-state current as a function of on-state voltage All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 8 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 003aaj348 1.6 VGT VGT(25°C) 1.2 0.8 0.4 -50 0 50 100 Tj (°C) 150 Fig 11. Normalized gate trigger voltage as a function of junction temperature BTA410X-600CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 9 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 12. Package outline SOT186A (TO-220F) BTA410X-600CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 10 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA410X-600CT v.1 20120313 Product data sheet - - BTA410X-600CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 11 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 10. Legal information 10.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 10.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 12 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com BTA410X-600CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 13 March 2012 © NXP B.V. 2012. All rights reserved. 13 of 14 BTA410X-600CT NXP Semiconductors 3Q Hi-Com Triac 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .6 Isolation characteristics . . . . . . . . . . . . . . . . . . .6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 March 2012 Document identifier: BTA410X-600CT