BUJD203A

BUJD203A NPN power transistor with integrated diode Rev. 02 — 2 December 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package. 1.2 Features and benefits  Fast switching  High voltage capability  Integrated anti-parallel E-C diode  Very low switching and conduction losses 1.3 Applications  DC-to-DC converters  Electronic lighting ballasts  Inverters  Motor control systems 1.4 Quick reference data Table 1. Symbol IC Ptot VCESM Quick reference data Parameter collector current total power dissipation collector-emitter peak voltage DC current gain Conditions see Figure 1; see Figure 2; DC; see Figure 4 see Figure 3; Tmb ≤ 25 °C VBE = 0 V Min Typ Max Unit 4 80 850 A W V Static characteristics hFE IC = 500 mA; VCE = 5 V; see Figure 11; Tj = 25 °C VCE = 5 V; IC = 3 A; Tmb = 25 °C; see Figure 11 VCEOsus collector-emitter IB = 0 A; LC = 25 mH; sustaining voltage IC = 10 mA; see Figure 6; see Figure 7 13 400 21 32 12.5 450 V NXP Semiconductors BUJD203A NPN power transistor with integrated diode 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description B C E C base collector emitter mounting base; connected to collector mb C Simplified outline Graphic symbol B E sym131 123 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUJD203A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 2 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 4. Limiting values Table 4. Symbol VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj Limiting values Parameter collector-emitter peak voltage collector-base voltage collector-emitter voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature Tmb ≤ 25 °C; see Figure 3 Conditions VBE = 0 V IE = 0 A IB = 0 A DC; see Figure 1; see Figure 2; see Figure 4 see Figure 1; see Figure 2; see Figure 4 DC Min -65 Max 850 850 425 4 8 2 4 80 150 150 Unit V V V A A A A W °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). 10 IC (A) 8 001aac000 VCC LC VCL(CE) probe point 6 IBon VBB LB DUT 001aab999 4 2 0 0 200 400 600 800 1000 VCEclamp (V) Fig 1. Reverse bias safe operating area Fig 2. Test circuit for reverse bias safe operating area BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 3 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 120 Pder (%) 80 001aab993 40 0 0 40 80 120 Tmb (°C) 160 Fig 3. 102 IC (A) 10 ICM(max) IC(max) Normalized total power dissipation as a function of mounting base temperature 001aac001 duty cycle = 0.01 II(3) (1) tp = 20 μs 50 μs 100 μs 200 μs 500 μs DC 1 (2) 10−1 10−2 I(3) III(3) 10−3 1 10 102 VCEclamp (V) 103 1) Ptot maximum and Ptot peak maximum lines 2) Second breakdown limits 3) I = Region of permissable DC operation II = Extension for repetitive pulse operation III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig 4. Forward bias safe operating area for Tmb ≤ 25 °C BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 4 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions see Figure 5 Min Typ Max 1.56 Unit K/W Rth(j-a) in free air - 60 - K/W 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10−1 0.05 0.02 0.01 tp T Ptot 001aab998 δ= tp T t 10−2 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 5 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 6. Characteristics Table 6. Symbol ICES ICBO ICEO IEBO VCEOsus VCEsat VBEsat VF hFE Characteristics Parameter Conditions [1] [1] [1] Min 400 10 13 11 - Typ 450 0.29 0.99 1.04 15 21 16 12.5 Max 2 1 1 0.1 10 1 1.5 1.5 32 32 22 - Unit mA mA mA mA mA V V V V Static characteristics collector-emitter cut-off VBE = 0 V; VCE = 850 V; Tj = 125 °C current VBE = 0 V; VCE = 850 V; Tj = 25 °C collector-base cut-off current VCB = 850 V; IE = 0 A collector-emitter cut-off VCE = 425 V; IB = 0 A current emitter-base cut-off current collector-emitter sustaining voltage collector-emitter saturation voltage VEB = 7 V; IC = 0 A IB = 0 A; IC = 10 mA; LC = 25 mH; see Figure 6; see Figure 7 IC = 3 A; IB = 0.6 A; see Figure 8; see Figure 9 [1] base-emitter saturation IC = 3 A; IB = 0.6 A; see Figure 10 voltage forward voltage DC current gain IF = 2 A; Tj = 25 °C IC = 1 mA; VCE = 5 V; Tmb = 25 °C; see Figure 11 IC = 500 mA; VCE = 5 V; Tj = 25 °C; see Figure 11 IC = 2 A; VCE = 5 V; Tmb = 25 °C; see Figure 11 IC = 3 A; VCE = 5 V; Tmb = 25 °C; see Figure 11 Dynamic characteristics ton turn-on time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 25 °C; inductive load; see Figure 14; see Figure 15 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 0.52 0.6 µs ts storage time - 2.7 3.3 µs - 1.2 1.4 µs - - 1.8 µs BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 6 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode Table 6. Symbol tf Characteristics …continued Parameter fall time Conditions IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 25 °C; inductive load; see Figure 14; see Figure 15 Min Typ 0.3 Max 0.35 Unit µs - - 0.12 µs - 0.03 0.06 µs [1] Measured with half-sine wave voltage (curve tracer) 50 V 100 Ω to 200 Ω horizontal oscilloscope vertical 6V 300 Ω 30 Hz to 60 Hz 001aab987 IC (mA) 250 1Ω 100 10 0 min VCE (V) VCEOsus 001aab988 Fig 6. Test circuit for collector-emitter sustaining voltage 2.0 001aab995 Fig 7. Oscilloscope display for collector-emitter sustaining voltage test waveform 001aab997 VCEsat (V) 1.6 VCEsat (V) 0.5 IC = 1 A 2A 3A 4A 0.4 1.2 0.3 0.8 0.2 0.4 0.1 0 10−2 10−1 1 IB (A) 10 0 10−1 1 IC (A) 10 Fig 8. Collector-emitter saturation voltage as a function of base current; typical values Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values © NXP B.V. 2010. All rights reserved. BUJD203A All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 2 December 2010 7 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 1.4 VBEsat (V) 1.2 1.0 0.8 001aab996 102 Tj = 25 °C hFE VCE = 5 V 001aab994 10 0.6 0.4 0.2 0 10−1 1 10−2 1V 1 IC (A) 10 10−1 1 IC (A) 10 Fig 10. Base-emitter saturation voltage as a function of collector current; typical values VCC Fig 11. DC current gain as a function of collector current; typical values IC 90 % ICon 90 % RL VIM 0 tp T 001aab989 RB DUT 10 % t tf IB ton ts toff IBon 10 % t tr ≤ 30 ns −IBoff 001aab990 Fig 12. Test circuit for resistive load switching Fig 13. Switching times waveforms for resistive load BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 8 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode VCC IC ICon 90 % LC LB DUT IBon VBB 001aab991 10 % tf IB ts toff IBon t t −IBoff 001aab992 Fig 14. Test circuit for inductive load switching Fig 15. Switching times waveforms for inductive load BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 9 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e e c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 16. Package outline SOT78 (TO-220AB) BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 10 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 8. Revision history Table 7. Revision history Release date 20101202 Data sheet status Product data sheet Preliminary data sheet Change notice Supersedes BUJD203A v.1 Document ID BUJD203A v.2 Modifications: BUJD203A v.1 • Data sheet status changed from Preliminary to Product. 20100909 BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 11 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 12 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUJD203A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 2 December 2010 13 of 14 NXP Semiconductors BUJD203A NPN power transistor with integrated diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 December 2010 Document identifier: BUJD203A