BUK7226-75A

BUK7226-75A N-channel TrenchMOS standard level FET Rev. 02 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features 175 °C rated Q101 compliant Low on-state resistance Standard level compatible 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Tj RDSon Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 [1] Symbol Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance Min -55 Typ 22 Max 75 45 158 175 26 Unit V A W °C mΩ Static characteristics VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 - Avalanche ruggedness EDS(AL)S non-repetitive ID = 45 A; Vsup ≤ 75 V; drain-source avalanche RGS = 50 Ω; VGS = 10 V; energy Tj(init) = 25 °C; unclamped inductive load [1] Capped at 45 A due to bondwire. - - 215 mJ NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning Symbol G D S D Description gate drain source mounting base; connected to drain 2 1 3 G mbb076 Simplified outline mb Graphic symbol D S SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Package Name BUK7226-75A DPAK Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) Version SOT428 Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature ID = 45 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped inductive load see Figure 3 [2][3] [4] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; tp ≤ 10 μs; pulsed; see Figure 4 Tmb = 25 °C; see Figure 2 [1] Min -20 -55 -55 - Max 75 75 20 45 38 215 158 175 175 215 Unit V V V A A A W °C °C mJ Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy Source-drain diode IS ISM [1] - - J source current peak source current Capped at 45 A due to bondwire. Tmb = 25 °C tp ≤ 10 μs; pulsed; Tmb = 25 °C [1] - 45 215 A A BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 2 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET [2] [3] [4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. 60 ID (A) (1) 003aac178 120 Pder (%) 80 03aa16 40 20 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 VGS 10 V P der = P tot P tot (25°C ) × 100 % (1) Capped at 45 A due to bondwire. Fig 1. Continuous drain current as a function of mounting base temperature 102 IAV (A) Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aac181 (1) 10 (2) (3) 1 10-1 10-3 10-2 10-1 1 tAV (ms) 10 (1) Single pulse; T j = 25 °C . (2) Single pulse; T j = 150 °C . (3) Repetitive. Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 3 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 103 ID (A) 10 2 003aac179 Limit RDSon = VDS / ID 10 μs (1) 100 μs 1 ms 10 ms DC 100 ms 10 1 10-1 1 10 102 VDS (V) 103 Tmb = 25 °C ; IDM is single pulse (1) Capped at 45 A due to bondwire. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Conditions minimum footprint; FR4 board Min Typ 70 Max Unit K/W Rth(j-mb) see Figure 5 - - 1 K/W BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 4 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 1 δ = 0.5 Zth(j-mb) (K/W) 0.2 10-1 0.1 0.05 0.02 003aac180 10-2 single shot P δ= tp T tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Characteristics Table 6. Symbol V(BR)DSS Characteristics Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = -55 °C ID = 0.25 mA; VGS = 0 V; Tj = 25 °C VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; voltage Tj = 175 °C; see Figure 11 ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11 IDSS drain leakage current VDS = 75 V; VGS = 0 V; Tj = 25 °C VDS = 75 V; VGS = 0 V; Tj = 175 °C IGSS gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 °C VDS = 0 V; VGS = -20 V; Tj = 25 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12 and 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 and 13 Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 16 0.85 1.2 V Min 70 75 1 2 Typ 3 0.05 2 2 Max 4 4.4 10 500 100 100 54 Unit V V V V V μA μA nA nA mΩ Static characteristics - 22 26 mΩ BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 5 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET Table 6. Symbol trr Qr Characteristics …continued Parameter Conditions Min Typ 53 144 Max Unit ns nC reverse recovery time IS = 20 A; dIS/dt = -100 A/μs; VGS = -10 V; VDS = 30 V; recovered charge Tj = 25 °C total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance measured from drain lead from package to center of die; Tj = 25 °C measured from source lead from package to source bond pad; Tj = 25 °C VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 ID = 25 A; VDS = 60 V; VGS = 10 V; see Figure 14 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD 48 7.5 17 1789 382 219 14 66 61 41 2.5 2385 458 300 nC nC nC pF pF pF ns ns ns ns nH VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C LS - 7.5 - nH 200 ID (A) 160 03nb06 28 RDSon (mΩ) 24 03nb05 VGS (V) = 20 10 9 8 120 7 80 6 16 40 5 0 0 2 4 6 8 10 VDS (V) 12 5 10 15 VGS (V) 20 20 T j = 25 °C ; t p = 300 s T j = 25 °C ; ID = 25 A Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 6 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 10−1 ID (A) 10−2 min typ max 03aa35 40 gfs (S) 30 03nb03 10−3 20 10−4 10 10−5 10−6 0 2 4 VGS (V) 6 0 0 20 40 60 ID (A) 80 T j = 25 °C ; VDS = VGS T j = 25 °C ; VDS = 25 V Fig 8. Sub-threshold drain current as a function of gate-source voltage 50 ID (A) 40 03nb04 Fig 9. Forward transconductance as a function of drain current; typical values 5 VGS(th) (V) 4 max 03aa32 30 3 typ 20 2 Tj = 175 °C 1 Tj = 25 °C min 10 0 0 2 4 VGS (V) 6 0 −60 0 60 120 Tj (°C) 180 VDS = 25 V ID = 1 m A; VDS = VGS Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 11. Gate-source threshold voltage as a function of junction temperature BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 7 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 60 RDSon (mΩ) 50 6 VGS (V) = 5 7 8 9 10 03nb07 2.4 a 03nb25 1.6 40 30 0.8 20 10 0 50 100 150 ID (A) 200 0 −60 0 60 120 Tj (°C) 180 T j = 25 °C a= R DSon R DSon (25°C ) Fig 12. Drain-source on-state resistance as a function of drain current; typical values 10 VGS (V) 8 VDS = 14 V 6 VDS = 60 V 4 03nb02 Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature 3000 C (pF) Ciss 2000 03nb08 Coss 1000 2 Crss 0 0 20 40 QG (nC) 60 0 10−2 10−1 1 10 VDS (V) 102 T j = 25 °C ; ID = 25 A VGS = 0 V ; f = 1 M H z Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 8 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 80 IS (A) 60 03nb01 40 Tj = 175 °C 20 Tj = 25 °C 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig 16. Reverse diode current; typical values BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 9 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E b2 A A1 A E1 mounting base D1 HD D2 2 L2 1 3 L L1 b1 e e1 b w M A c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.93 0.46 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.00 c 0.56 0.20 D1 6.22 5.98 D2 min 4.0 E 6.73 6.47 E1 min 4.45 e 2.285 e1 4.57 HD 10.4 9.6 L 2.95 2.55 L1 min 0.5 L2 0.9 0.5 w 0.2 y max 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 17. Package outline SOT428 (DPAK) BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 10 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Release date 20080222 Data sheet status Product data sheet Change notice Supersedes BUK7226_75A-01 Document ID BUK7226-75A_2 Modifications: • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product specification; initial version - BUK7226_75A-01 20001009 BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 11 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BUK7226-75A_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 22 February 2008 12 of 13 NXP Semiconductors BUK7226-75A N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 February 2008 Document identifier: BUK7226-75A_2