BUK7608-40B

BUK75/7608-40B N-channel TrenchMOS standard level FET Rev. 02 — 16 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible 1.3 Applications I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads 1.4 Quick reference data I EDS(AL)S ≤ 241 mJ I ID ≤ 75 A I RDSon = 6.6 mΩ (typ) I Ptot ≤ 157 W 2. Pinning information Table 1. Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outlines and symbol Description Gate (G) Drain (D) Source (S) mounting base, connected to drain (D) 1 mbb076 Simplified outline [1] Symbol mb D mb G S 2 3 SOT404 (D2PAK) 123 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Package Name Description Version Type number BUK7508-40B BUK7608-40B TO-220AB plastic single-ended package; heat sink mounted; 1 mounting hole; 3-leads SOT78A D2PAK plastic single-ended surface mounted package (D2PAK); 3 leads (one lead SOT404 cropped) 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage (DC) gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting at Tmb = 25 °C [1] [2] [1] [2] [1] Conditions RGS = 20 kΩ Min −55 −55 - Max 40 40 ±20 101 75 71 407 157 +175 +175 101 75 407 241 Unit V V V A A A A W °C °C A A A mJ Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1 Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] [2] Current is limited by power dissipation chip rating. Continuous current is limited by package. BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 2 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 120 Pder (%) 80 003aac070 120 ID (A) 80 003aac081 (1) 40 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 Tmb (°C) 200 P tot P der = ----------------------- × 100 % P tot ( 25 ° C ) Fig 1. Normalized total power dissipation as a function of solder point temperature 103 ID (A) 102 Limit RDSon = VDS / ID VGS ≥ 10 V [1] Capped at 75 A due to package. Fig 2. Continuous drain current as a function of mounting base temperature 003aac079 tp = 10 µs 100 µs (1) 1 ms 10 10 ms 100 ms DC 1 10−1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. [1] Capped at 75 A due to package. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 3 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Rth(j-mb) Rth(j-a) Thermal characteristics Conditions see Figure 4 [1] [2] Symbol Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Min - Typ 60 50 Max 0.95 - Unit K/W K/W K/W [1] [2] Vertical in still air; SOT78 package. mounted on a printed circuit board; minimum footprint; SOT404 package 1 Zth(j − mb) (K / W) 10−1 δ = 0.5 0.2 0.1 0.05 0.02 10−2 single pulse P 003aac080 δ= tp T tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting bast as a function of pulse duration BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 4 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain leakage current VDS = 40 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID =25 A; see Figure 6 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to center of die from contact screw on mounting base to center of die SOT78 from upper edge of drain mounting base to center of die SOT404 LS internal source inductance from source lead 6 mm from package to source bond pad Source-drain diode 7.5 nH 2.5 nH 3.5 nH VDD = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 ID = 25 A; VDD = 32 V; VGS = 10 V; see Figure 14 36 9 12 2017 486 213 20 51 20 33 4,5 2689 583 291 nC nC nC pF pF pF ns ns ns ns nH 6.6 8 15.2 mΩ mΩ 0.02 2 1 500 100 µA µA nA 2 1 3 4 4.4 V V V 40 36 V V Conditions Min Typ Max Unit BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 5 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET Table 5. Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter VSD trr Qr source-drain voltage reverse recovery time recovered charge Conditions IS = 25 A; VGS = 0 V; see Figure 15 IS = 20 A; dIS/dt = −100 A/µs; VGS = −10 V; VDS = 20 V Min Typ 0.85 53 44 Max 1.2 Unit V ns nC 300 ID (A) 200 20 14 12 VGS (V) = 10 9.5 9.0 8.5 8.0 7.5 100 7.0 6.5 6.0 5.5 5.0 4.5 0 2 4 6 8 003aac076 14 RDSon (mΩ) 12 003aac075 10 8 6 0 4 10 VDS (V) 5 10 15 VGS (V) 20 Tj = 25 °C; tp = 300 µs Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 16 6.0 RDSon (mΩ) VGS (V) = 10 12 6.5 7.0 8.0 003aac077 Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 2 a 003aab851 1.5 1 8 0.5 20 4 0 100 200 ID (A) 300 0 −60 0 60 120 Tj (°C) 180 Tj = 25 °C R DSon a = ----------------------------R DSon ( 25 ° C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 7. Drain-source on-state resistance as a function of drain current; typical values. BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 6 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 5 VGS(th) (V) 4 max 003aab852 10−1 ID (A) 10−2 min typ 003aab853 max 3 typ 10−3 2 min 10−4 1 10−5 0 −60 10−6 0 60 120 Tj (°C) 160 0 2 4 VGS (V) 6 ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature 60 gfs (S) 40 003aac073 Fig 10. Sub-threshold drain current as a function of gate-source voltage 3000 C (pF) 2000 Coss Ciss 003aac078 20 1000 Crss 0 0 20 40 ID (A) 60 0 10−2 10−1 1 10 VDS (V) 102 Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 7 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 100 ID (A) 75 003aac074 10 VGS (V) 8 VDD = 14 V 003aac072 VDD = 32 V 6 50 4 25 Tj = 175 °C 25 °C 2 0 0 2 4 6 VGS (V) 8 0 0 10 20 30 QG (nC) 40 VDS = 25 V Tj = 25 °C; ID = 25 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 100 IS (A) 75 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 003aac071 50 25 Tj = 175 °C 25 °C 0 0.0 0.3 0.6 0.9 VSD (V) 1.2 VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 8 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.6 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 03-01-22 05-03-14 Fig 16. Package outline SOT78A (TO-220AB) BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 9 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 mounting base D1 D HD 2 Lp 1 3 b c Q e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT404 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 Fig 17. Package outline SOT404 (D2PAK) BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 10 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 8. Soldering 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.35 8.275 1.50 4.60 0.30 4.85 5.40 8.075 7.95 3.00 0.20 solder lands solder resist occupied area solder paste 5.08 1.20 1.30 1.55 msd057 Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404 BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 11 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 9. Revision history Table 6. Revision history Release date 20071116 Data sheet status Product data sheet Change notice Supersedes BUK75_7608_40B-01 Document ID BUK75_7608-40B_2 Modifications: • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet - BUK75_7608_40B-01 20030319 BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 12 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 11. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 13 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 November 2007 Document identifier: BUK75_7608-40B_2