BUK7609-75A

BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7509-75A in SOT78 (TO-220AB) BUK7609-75A in SOT404 (D 2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible. 3. Applications c c s Automotive and general purpose power switching: x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) mb d g s 2 MBK106 MBB076 1 3 MBK116 123 SOT78 (TO-220AB) SOT404 (D2-PAK) Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 175 °C Typ − − − − 7.7 − Max 75 75 230 175 9 18.9 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 75 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 kΩ Conditions Min − − − − − − − −55 −55 − − − Max 75 75 ±20 75 65 440 230 +175 +175 75 440 560 Unit V V V A A A W °C °C A A mJ Source-drain diode Avalanche ruggedness 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 2 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 120 Pder (%) 100 03na19 03aa24 120 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 200 o Tmb ( C) 0 0 25 50 75 100 125 150 175 200 o Tmb ( C) P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) VGS ≥ 4.5 V ID I der = ------------------ × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. 1000 ID (A) RDSon = VDS/ ID Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03nb54 tp = 10 us 100 100 us 1 ms 10 P δ= tp T D.C. 10 ms 100 ms tp T t 1 1 10 VDS (V) 100 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 3 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 7. Thermal characteristics Table 4: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in still air; SOT78 package mounted on printed circuit board; minimum footprint; SOT404 package Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Value 60 50 Unit K/W K/W 0.65 K/W 7.1 Transient thermal impedance 1 Zth(j-mb) (K/W) δ = 0.5 0.2 03nb55 0.1 0.1 0.05 0.02 0.01 P δ= tp T Single Shot tp T t 0.001 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 4 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 75 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics Ciss Coss Crss td(on) tr td(off) tf Ld input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6mm from package to centre of die from contact screw on mounting base to centre of die SOT78 from upper edge of drain mounting base to centre of die SOT404 Ls internal source inductance from source lead to source bond pad VDD = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 − − − − − − − − − 5068 1082 620 35 107 183 100 4.5 3.5 6760 1300 850 − − − − − − pF pF pF ns ns ns ns nH nH − − 7.7 − 9 18.9 mΩ mΩ − − − 0.05 − 2 10 500 100 µA µA nA 2 1 − 3 − − 4 − 4.4 V V V 75 70 − − − − V V Min Typ Max Unit Static characteristics − 2.5 − nH − 7.5 − nH 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 5 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified Symbol VSD trr Qr Parameter source-drain (diode forward) voltage reverse recovery time recovered charge Conditions IS = 25 A; VGS = 0 V; Figure 15 IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V Min − − − Typ 0.85 75 270 Max 1.2 − − Unit V ns nC Source-drain diode 400 ID (A) 350 300 250 200 150 100 50 03nb51 16 12 10 VGS (V) = 20 9.5 8.5 7.5 12 RDSon (mΩ) 11 10 9 6.5 8 7 5.5 6 4.5 5 4 03nb50 0 0 2 4 6 8 10 VDS (V) 5 10 15 VGS (V) 20 Tj = 25 °C; tp = 300 µs Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03nb52 Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 2.4 a 2.2 2.0 1.8 03nb25 18 RDSon (mΩ) 16 VGS (V) = 5.5 6 6.5 7 14 8 12 9 10 1.6 1.4 1.2 1.0 0.8 0.6 10 8 0.4 0.2 6 0 40 80 120 160 200 240 280 320 360 ID (A) 0.0 -60 -20 20 60 100 140 180 Tj (oC) Tj = 25 °C R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 6 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 5 VGS(th) (V) 03aa32 10-1 ID (A) 03aa35 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 140 Tj (oC) 180 min typ. max. 10-2 10-3 min 10-4 typ max 10-5 10-6 0 1 2 3 4 VGS (V) 5 ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 80 gfs (S) 70 60 03nb48 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 9000 C (pF) 8000 7000 6000 03nb53 50 40 30 20 10 0 20 40 60 ID (A) 80 5000 4000 3000 2000 1000 0 0.01 0.1 1 Ciss Coss Crss 10 V 100 DS (V) Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 7 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET ID 110 (A) 100 90 80 70 60 50 03nb49 10 VGS (V) 9 8 7 6 5 4 VDD= 14 V 03nb47 VDD= 60 V 40 30 20 10 0 0 2 Tj = 175 C O 3 2 Tj = 25 C O 1 0 4 VGS (V) 6 0 50 100 QG (nC) 150 VDS = 25 V Tj = 25 °C; ID = 25 A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 120 IS (A) 100 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 03nb46 80 60 Tj = 175 OC 40 Tj = 25 OC 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) VGS = 0 V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 8 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E P A A1 q D1 mounting base D L2(1) L1 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0 (1) P 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB EIAJ SC-46 EUROPEAN PROJECTION ISSUE DATE 99-09-13 00-09-07 Fig 16. SOT78 (TO-220AB). 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 9 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A E A1 mounting base D1 D HD 2 Lp 1 3 b c Q e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.40 14.80 Q 2.60 2.20 OUTLINE VERSION SOT404 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 Fig 17. SOT404 (D2-PAK). 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 10 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 10. Soldering handbook, full pagewidth 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.35 8.275 1.50 4.60 0.30 4.85 5.40 8.075 7.95 3.00 0.20 solder lands solder resist occupied area solder paste 5.08 1.20 1.30 1.55 MSD057 Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 11 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 11. Revision history Table 6: 02 Revision history CPCN Description Product specification; second version; supersedes Rev. 01 of 20001010. Rev Date 20001106 • • 01 20001010 - Typical value of ‘RDSon’ added in Table 2 “Quick reference data” Value of ‘IS’ changed from ‘46 A’ to ‘20 A’ in the ‘Conditions’ column of ‘trr’ and ‘Qr’; see section “Source-drain diode” of Table 5 “Characteristics”. Product specification; initial version. 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 12 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET 12. Data sheet status Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production [1] Please consult the most recently issued data sheet before initiating or completing a design. 13. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9397 750 07655 © Philips Electronics N.V. 2000 All rights reserved. Product specification Rev. 02 — 06 November 2000 13 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: see Austria India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet: http://www.semiconductors.philips.com (SCA70) 9397 750 07655 © Philips Electronics N.V. 2000. All rights reserved. Product specification Rev. 02 — 06 November 2000 14 of 15 Philips Semiconductors BUK7509-75A; BUK7609-75A TrenchMOS™ standard level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 © Philips Electronics N.V. 2000. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 06 November 2000 Document order number: 9397 750 07655