BUK765R2-40B

BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 02 — 16 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 40 75 203 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 14 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 16 nC ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 494 mJ Static characteristics RDSon drain-source on-state resistance 4.4 5.2 mΩ [1] Continuous current is limited by package. NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source mounting base; connected to drain 2 1 3 Simplified outline [1] mb Graphic symbol D G mbb076 S SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK765R2-40B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Version SOT404 BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 2 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 100 °C; VGS = 10 V; see Figure 1; IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 °C; Tmb = 25 °C; tp ≤ 10 µs; pulsed; Tmb = 25 °C Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy [1] [2] Current is limited by power dissipation chip rating. Continuous current is limited by package. In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ [1] [2] [2] Min -20 -55 -55 [1] [2] Max 40 40 20 143 75 75 573 203 175 175 143 75 573 494 Unit V V V A A A A W °C °C A A A mJ Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 2 Source-drain diode BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 3 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 150 03nj26 120 Pder (%) 80 03na19 ID (A) 100 Capped at 75 A due to package 50 40 0 0 50 100 150 200 Tmb (°C) 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 103 03nj24 ID (A) tp = 10 µs Limit RDSon = VDS/ID 102 100 µs Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms 1 10-1 1 10 VDS (V) 102 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 4 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 0.74 Unit K/W thermal resistance from see Figure 4 junction to mounting base thermal resistance from minimum footprint; mounted on a junction to ambient printed-circuit board Rth(j-a) - 50 - K/W 1 Zth(j-mb) (K/W) δ = 0.5 03nj25 0.2 10-1 0.1 0.05 0.02 10-2 P single shot δ= tp T tp 10-3 10-6 T 10-5 10-4 10-3 10-2 10-1 tp (s) t 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 5 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 °C ID = 0.25 mA; VGS = 0 V; Tj = -55 °C ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 40 V; VGS = 0 V; Tj = 25 °C VDS = 40 V; VGS = 0 V; Tj = 175 °C VDS = 0 V; VGS = 20 V; Tj = 25 °C VDS = 0 V; VGS = -20 V; Tj = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 11; see Figure 12 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to centre of die; Tj = 25 °C from upper edge of drain mounting base to centre of die; Tj = 25 °C LS internal source inductance source-drain voltage reverse recovery time recovered charge from source lead to source bond pad; Tj = 25 °C IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 20 V; Tj = 25 °C VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 15 ID = 25 A; VDS = 32 V; VGS = 10 V; Tj = 25 °C; see Figure 14 52 12 16 2842 711 296 15 51 81 56 4.5 2.5 7.5 3789 853 406 nC nC nC pF pF pF ns ns ns ns nH nH nH Min 40 36 2 1 Typ 3 0.02 2 2 4.4 Max 4 4.4 1 500 100 100 5.2 9.9 Unit V V V V V µA µA nA nA mΩ mΩ Static characteristics Source-drain diode VSD trr Qr 0.85 54 38 1.2 V ns nC BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 6 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 400 ID (A) 300 20 14 12 10 9.5 9 8.5 8 7.5 200 7 6.5 100 6 5.5 5 4.5 0 2 4 6 8 03nk19 18 RDSon (mΩ) 13 03nk18 label is VGS (V) 8 0 3 10 VDS (V) 5 10 15 VGS (V) 20 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03aa35 Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 10−1 ID (A) 10−2 min typ max 80 gfs (S) 60 03nk16 10−3 40 10−4 10−5 20 10−6 0 2 4 VGS (V) 6 0 0 20 40 60 ID (A) 80 Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 7 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 100 ID (A) 75 03nk17 5 VGS(th) (V) 4 max 03aa32 3 50 typ 2 min 25 Tj = 175 °C Tj = 25 °C 1 0 0 2 4 VGS (V) 6 0 −60 0 60 120 Tj (°C) 180 Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 10. Gate-source threshold voltage as a function of junction temperature 10 6 RDSon (mΩ) 8 7 8 03nk20 2 a 1.5 03aa27 10 6 20 1 4 label is VGS (V) 0.5 2 0 100 200 300 ID (A) 400 0 -60 0 60 120 Tj (°C) 180 Fig 11. Drain-source on-state resistance as a function of drain current; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 8 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 100 IS (A) 75 03nk14 10 VGS (V) 8 VDD = 14 V 6 03nk15 VDD = 32 V 50 4 Tj = 175 °C 25 Tj = 25 °C 2 0 0.0 0.3 0.6 0.9 VSD (V) 1.2 0 0 20 40 QG (nC) 60 Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Gate-source voltage as a function of gate charge; typical values 4000 C (pF) 3000 Ciss 03nk21 Coss 2000 1000 Crss 0 10-1 1 10 VDS (V) 102 Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 9 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A E A1 mounting base D1 D HD 2 Lp 1 3 b c Q e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT404 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 Fig 16. Package outline SOT404 (D2PAK) BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 10 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Release date 20090116 Data sheet status Product data sheet Change notice Supersedes BUK75_765R2_40B-01 Document ID BUK765R2-40B_2 Modifications: • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK765R2-40B separated from data sheet BUK75_765R2_40B-01. Package outline updated. Product data sheet - BUK75_765R2_40B-01 20030514 BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 11 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 12 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 January 2009 Document identifier: BUK765R2-40B_2