BUK7C10-75AITE

BUK7C10-75AITE N-channel TrenchPLUS standard level FET Rev. 03 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature monitoring due to integrated temperature sensor Electrostatically robust due to integrated protection diodes Low conduction losses due to low on-state resistance Q101 compliant Reduced component count due to integrated current sensor 1.3 Applications Automotive and general purpose power switching Fan control Electrical Power Assisted Steering (EPAS) Variable Valve Timing for engines 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 2; [1] see Figure 3 VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 Tj > -55 °C; Tj < 175 °C; VGS > 10 V IF = 250 µA; Tj > -55 °C; Tj < 175 °C IF = 250 µA; Tj = 25 °C Min Typ Max 75 114 Unit V A Static characteristics RDSon ID/Isense SF(TSD) VF(TSD) drain-source on-state resistance ratio of drain current to sense current temperature sense diode temperature coefficient temperature sense diode forward voltage [1] 450 -1.4 648 8.8 500 -1.54 658 10 550 -1.68 668 mΩ mV/K mV Current is limited by power dissipation chip rating. NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 mb Pinning information Symbol G ISENSE A D K KS S D Description gate sense current anode drain cathode Kelvin source source mounting base; connected to drain g Simplified outline mb Graphic symbol d a 4 123 567 SOT427 (D2PAK) MBL362 Isense s k Kelvin source 3. Ordering information Table 3. Ordering information Type number Package Name Description BUK7C10-75AITE D2PAK plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped) Version SOT427 BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 2 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 4. Limiting values Table 4. Symbol VDS VDGS VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 IDM Ptot IGS(CL) peak drain current total power dissipation gate-source clamping current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 Tmb = 25 °C; see Figure 1 continuous pulsed; tp = 5 ms; δ = 0.01 [1] [2] [2] Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Min -20 -100 Max 75 75 20 114 75 75 456 272 10 50 100 Unit V V V A A A A W mA mA V In accordance with the Absolute Maximum Rating System (IEC 60134). Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IS ISM EDS(AL)S storage temperature junction temperature source current peak source current Tmb = 25 °C tp ≤ 10 µs; pulsed; Tmb = 25 °C [1] [2] Avalanche ruggedness non-repetitive ID = 75 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy electrostatic discharge voltage [1] [2] -55 -55 - 175 175 114 75 456 739 °C °C A A A mJ Source-drain diode Electrostatic discharge Vesd HBM; C = 100 pF; R = 1.5 kΩ 6 kV Current is limited by power dissipation chip rating. Continuous current is limited by package. BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 3 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 120 Pder (%) 80 03na19 120 ID (A) 03ni93 80 Capped at 75 A due to package 40 40 0 0 50 100 150 Tmb (°C) 200 0 0 50 100 150 200 Tmb (°C) Fig 2. Fig 1. Normalized total power dissipation as a function of mounting base temperature Normalized continuous drain current as a function of mounting base temperature 103 ID (A) 03ni94 Limit RDSon = VDS/ID tp = 10 μs 102 100 μs Capped at 75 A due to package DC 10 1 ms 10 ms 100 ms 1 1 10 102 VDS (V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 4 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 5. Thermal characteristics Table 5. Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions mounted on printed-circuit board; minimum footprint Min Typ Max 50 0.55 Unit K/W K/W thermal resistance from see Figure 4 junction to mounting base 1 Z th(j-mb) (K/W) 03ni64 δ = 0.5 10-1 0.2 0.1 0.05 0.02 10-2 P δ= tp T single shot tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 5 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 6. Characteristics Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 °C ID = 0.25 mA; VGS = 0 V; Tj = -55 °C ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9 IDSS V(BR)GSS drain leakage current VDS = 75 V; VGS = 0 V; Tj = 25 °C VDS = 75 V; VGS = 0 V; Tj = 175 °C gate-source breakdown IG = 1 mA; VDS = 0 V; Tj > -55 °C; voltage Tj < 175 °C IG = -1 mA; VDS = 0 V; Tj > -55 °C; Tj < 175 °C IGSS gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 °C VDS = 0 V; VGS = -10 V; Tj = 25 °C VDS = 0 V; VGS = 10 V; Tj = 175 °C VDS = 0 V; VGS = -10 V; Tj = 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 VGS = 10 V; ID = 50 A; Tj = 175 °C; see Figure 7; see Figure 8 VF(TSD) SF(TSD) temperature sense diode forward voltage temperature sense diode temperature coefficient temperature sense diode forward voltage hysteresis ratio of drain current to sense current total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 12 IF = 250 µA; Tj = 25 °C IF = 250 µA; Tj > -55 °C; Tj < 175 °C Min 75 70 2 1 20 20 648 -1.4 Typ 3 0.1 22 22 22 22 8.8 658 -1.54 Max 4 4.4 10 250 1000 1000 10 10 10 21 668 -1.68 Unit V V V V V µA µA V V nA nA µA µA mΩ mΩ mV mV/K Static characteristics VF(TSD)hys IF > 125 µA; IF < 250 µA; Tj = 25 °C 25 32 50 mV ID/Isense VGS > 10 V; Tj > -55 °C; Tj < 175 °C 450 500 550 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss ID = 25 A; VDS = 60 V; VGS = 10 V; Tj = 25 °C; see Figure 14 121 20 44 4700 800 455 nC nC nC pF pF pF BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 6 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET Table 6. Symbol td(on) tr td(off) tf LD LS Characteristics …continued Parameter turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance source-drain voltage reverse recovery time recovered charge from upper edge of drain mounting base to center of die; Tj = 25 °C from source lead to source bond pad; Tj = 25 °C IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 18 IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C Conditions VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C Min Typ 35 108 185 100 2.5 7.5 Max Unit ns ns ns ns nH nH Source-drain diode VSD trr Qr 0.85 75 270 1.2 V ns nC BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 7 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 350 ID (A) 280 20 03ni74 18 RDSon (mΩ) 03ni76 10 9 label is VGS (V) 8.5 8 7.5 14 210 7 6.5 140 6 5.5 70 5 4.5 0 0 2 4 6 8 10 VDS (V) 6 5 10 15 VGS (V) 20 10 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03ni75 Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 2.4 03nb25 20 RDSon (mΩ) 16 VGS = 5.5 V 6 V 6.5 V 7V 8V a 1.6 10 V 20 V 12 0.8 8 0 70 140 210 280 350 ID (A) 0 −60 0 60 120 Tj (°C) 180 Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 8 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 5 VGS(th) (V) 4 max 03aa32 10−1 ID (A) 10−2 min typ max 03aa35 3 typ 10−3 2 min 10−4 1 10−5 0 −60 10−6 0 60 120 Tj (°C) 180 0 2 4 VGS (V) 6 Fig 9. Gate-source threshold voltage as a function of junction temperature 03ni77 Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ni97 80 gfs (S) 60 8000 C (pF) 6000 Ciss 40 4000 Crss Coss 20 2000 0 0 25 50 75 ID (A) 100 0 10-2 10-1 1 10 VDS(V) 102 Fig 11. Forward transconductance as a function of drain current; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 9 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 100 ID (A) 75 03ni78 10 VGS (V) 8 14 V 6 03ni92 50 4 175 °C 25 2 Tj = 25 °C 0 0.0 2.0 4.0 VGS (V) 6.0 0 0 50 100 QG (nC) 150 VDS = 60 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 700 VF (mV) 600 03ne84 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values −1.70 SF (mV/K) −1.60 max 03ne85 typ 500 −1.50 min 400 0 50 100 150 Tj (°C) 200 −1.40 645 655 665 VF (mV) 675 Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 10 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 600 ID/Isense 03ni98 100 IS (A) 75 03ni79 550 500 50 175 °C 450 25 Tj = 25 °C 400 4 8 12 16 VGS (V) 20 0 0.0 0.4 0.8 1.2 VSD (V) 1.6 Fig 17. Drain-sense current ratio as a function of gate-source voltage; typical values Fig 18. Reverse diode current as a function of reverse diode voltage; typical values BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 11 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 7 leads (one lead cropped) SOT427 A E A1 D1 mounting base D HD 4 Lp 1 7 b e e e e e e c Q 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.27 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT427 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-03-09 06-03-16 Fig 19. Package outline SOT427 (D2PAK) BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 12 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 8. Revision history Table 7. Revision history Release date 20090217 Data sheet status Product data sheet Change notice Supersedes BUK7C10_75AITE-02 Document ID BUK7C10-75AITE_3 Modifications: • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet Product data sheet BUK7C10_75AITE-01 - BUK7C10_75AITE-02 (9397 750 11048) BUK7C10_75AITE-01 (9397 750 09881) 20030318 20020725 BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 13 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 14 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 February 2009 Document identifier: BUK7C10-75AITE_3