Power MOSFET
Selection Guide 2013
Smaller, faster, cooler
2
Table of contents
Featured Application: Wide SOA ������������������������������������������������������������������������������������������������������������ 6
Featured Application: Power Tools ��������������������������������������������������������������������������������������������������������� 8
Featured Package: LFPAK ���������������������������������������������������������������������������������������������������������������������� 10
20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������ 22
30 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������������ 24
40 V – 50 V N-channel MOSFETs ����������������������������������������������������������������������������������������������������� 27
55 V – 60 V N-channel MOSFETs ����������������������������������������������������������������������������������������������������� 28
75 V – 80 V N-channel MOSFETs ����������������������������������������������������������������������������������������������������� 30
100 V N-channel MOSFETs ��������������������������������������������������������������������������������������������������������������� 31
105 V – 150 V N-channel MOSFETs ������������������������������������������������������������������������������������������������� 33
200 V – 300 V N-channel MOSFETs ������������������������������������������������������������������������������������������������� 33
P-channel MOSFETs �������������������������������������������������������������������������������������������������������������������������� 34
Multichip MOSFETs ��������������������������������������������������������������������������������������������������������������������������� 36
Featured Technology: Trench 6 for Automotive ��������������������������������������������������������������������������������� 39
30 V N-channel Automotive TrenchMOS ����������������������������������������������������������������������������������������� 42
40 V N-channel Automotive TrenchMOS ����������������������������������������������������������������������������������������� 43
55 V – 60V N-channel Automotive TrenchMOS ����������������������������������������������������������������������������� 45
75 V – 80 V N-channel Automotive TrenchMOS ���������������������������������������������������������������������������� 49
100 V N-channel Automotive TrenchMOS �������������������������������������������������������������������������������������� 51
TrenchPLUS MOSFETs ����������������������������������������������������������������������������������������������������������������������� 53
Featured package: LFPAK56D �������������������������������������������������������������������������������������������������������������� 55
3
Power MOSFETs - Smaller, faster, cooler
NXP MOSFETs are renowned for their quality,
performance and reliability.
4
Whether you are designing a complex automotive system, a super high efficiency
industrial power supply or a slimline portable PC, NXP has a range of smaller, faster,
cooler MOSFETs to help you on your way.
For example our 25 V and 30 V MOSFETs in LFPAK56 (Power-SO8 compatible) offer the lowest RDS(ON) of any devices in this
category. Our Automotive Trench 6 portfolio leads theindustry in both breadth of range and performance, with RDS(ON) from
1.3 mΩ to over 100 mΩ and voltages from 30 V to 100 V.
In the Industrial sector we have extended our NextPower range in to more packages, such as:
} Full Pack (TO220F) with integrated isolation for ease of assembly
} A wider range of D2PAK devices for surface mount applications
} I2PAK for slimline notebook adapters and other height-constrained applications
} Extension of the LFPAK clip-mounting technology into the 3.3 x 3.3 mm LFPAK33 for space saving without compromising
reliability and performance
} The Benchmark 1.6 mΩ / 40 V LFPAK56 (Power-SO8 compatible)
} New devices with specific enhancements for applications such as Power Tools and wide SOA parts for Hot Swap and Soft-Start
applications
In addition we have now introduced Automotive Grade dual-channel LFPAK56D devices in Trench 6
A printed selection guide is by necessity a snapshot in time of our portfolio. To ensure that you stay up to date with our very
latest product offerings please visit our newly designed website www.nxp.com/mosfets incorporating our market leading
MOSFET parametric search tool.
Join My NXP http://www.nxp.com/my and you can also follow us on twitter @MOSFETs.
5
Featured application: wide SOA
NextPower Live! – MOSFETs for a non-stop world
Reliable linear mode performance AND low RDS(on) efficiency in “hot-swap” and “soft-start”
applications.
6
Non-stop Applications
Non-stop Equipment
} Cloud computing
} Blade servers
} Network storage
} Routers, switches & base stations
} Communications infrastructure
} RAID arrays
} Industrial process control
} Industrial PCs
} Transaction processing
} Programmable Logic Controllers (PLCs)
} Traffic monitoring & signalling
} Digital video recorders
} CCTV security
} “Hot-swap” & “soft-start” systems
For the most up to date product information, please visit www.nxp.com/mosfets
Mobile phones, ATMs, the internet, traffic signals – so much of our daily life depends on 24/7/365
computers, communications, and storage, made possible by rack-based systems that can be maintained
with the power on. NextPower Live MOSFETs are designed specifically for such applications:
} When a replacement board is plugged into a live system, it is
} Once the replacement board is safely installed, the MOSFET
important that the in-rush current is carefully controlled, so
is turned fully ON. In this mode of operation, a low RDS(on)
as to protect the components on the board and ensure that
value is of primary importance, helping to keep temperatures
other parts of the system experience no power disruption.
low while maximizing system efficiency.
This application requires MOSFETs with strong linear mode
performance and a wide safe operating area (SOA) to
} Only NextPower Live MOSFETs offer reliable linear mode
performance AND low RDS(on) efficiency.
manage current effectively and reliably.
NextPower Live Portfolio
Package
D2PAK
(SOT404)
LFPAK56
(Power-SO8)
30 V
for 12 V supplies used in computing applications
100 V
for 48 V supplies used in computing telecommunications
PSMN1R5-30BLE
PSMN3R4-30BLE
PSMN4R8-100BSE
PSMN7R6-100BSE
PSMN2R40-30YLE
PSMN013-100YSE
(specificaly for PoE applications)
LFPAK33
PSMN040-100MSE
PSMN075-100MSE
Available Now Available Q1/2013
For the most up to date product information, please visit www.nxp.com/mosfets
7
Featured application: power tools
Battery-powered tools, which include everything from small
engraving devices and screwdrivers to heavy-duty saws and
agricultural tools, present a wide variety of requirements for driving
the motor. The MOSFETs used in these systems have to perform at
demanding levels and must have:
} Low on-resistance for optimum battery life
} Low thermal resistance for reduced junction temperature
(for greater reliability)
} High current capability (if, for example, the motor stalls)
Typical Power Tools MOSFET
} Choice of logic- and standard-level gate drives, depending on
internal construction
battery voltage
} Excellent avalanche ruggedness to withstand high-load conditions
(such as a stalled motor)
} Environmental robustness , such as wide operating / storage
temperature, since a tool might be stored in a van during winter in
High-current
Al source-bon wires
Siberia or used in the mid-day heat of Dubai
} Competitive cost
In other words, the motor-control MOSFET needs to deliver
automotive-grade performance at a commercially competitive price
Silicon
Die
NXP has developed a range of MOSFETs specifically aimed at motor-control applications. They have the same high-current source
bond-wires and high reliability design as our AEC Q101 automotive-qualified parts. A selection of these devices is shown in the
table. Look for the power tool symbol
in the selection tables for other suitable devices.
NXP’s pedigree in automotive MOSFETs means we have the know-how
to produce devices with excellent avalanche ruggedness. The same
expertise deployed in power steering and ABS systems worldwide is put
to use in our devices for power tools, and that means performance you
can count on.
Max Current (ID[max]) depends largely on the number and diameter of
the aluminium bond wires. The NXP Power Tools portfolio is based on
the automotive standard of three wires of 500 µm (typ), allowing for an
ID[max] rating of up to 150 A in a TO220 package.
8
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Device name
VDS (V)
RDSon [max]
@ VGS = 10 V (mΩ)
RDSon [max]
@ VGS = 4.5 V (mΩ)
ID [max] (A)
EAS at rated
current [mJ]
Package
Gate threshold
PSMN2R0-30YL
30
2
2.63
100
151
LFPAK56
Logic Level
PSMN2R0-30YLE
30
2
3.5
100
370
LFPAK56
Logic Level
PSMN2R5-30YL
30
2.4
3.16
100
103
LFPAK56
Logic Level
PSMN2R6-30YLC
30
2.8
3.65
100
50
LFPAK56
Logic Level
PSMN1R9-40PL
40
1.7
TBC
150
1008
TO220 (SOT78)
Logic Level
PSMN2R1-40PL
40
2.2
TBC
150
622
TO220 (SOT78)
Logic Level
PSMN1R5-40PS
40
1.6
TBC
120
1400
TO220 (SOT78)
Standard Level
PSMN2R2-40PS
40
2.1
TBC
100
1240
TO220 (SOT78)
Standard Level
PSMN2R5-60PL
60
2.6
TBC
150
655
TO220 (SOT78)
Logic Level
PSMN2R6-60PS
60
2.9
TBC
150
519
TO220 (SOT78)
Standard Level
PSMN3R3-60PL
60
3.4
TBC
130
404
TO220 (SOT78)
Logic Level
PSMN3R9-60PS
60
3.9
TBC
130
372
TO220 (SOT78)
Standard Level
PSMN4R2-60PL
60
4.3
TBC
130
372
TO220 (SOT78)
Logic Level
PSMN7R6-60PS
60
7.8
TBC
92
110
TO220 (SOT78)
Standard Level
Types in bold red represent new products
Heavier duty tools with large batteries require MOSFETs to withstand higher
currents. NXP’s SOT427 (7Pin D2PAK) with Trench 6 silicon will handle up
to up to 300A. Smaller hand-held tools may require smaller batteries. The
high-reliability LFPAK56 is ideal for lower currents and space-constrained
applications.
For the most up to date product information, please visit www.nxp.com/mosfets
9
NXP’s LFPAK – Designed for reliability
Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range
of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.
Since 1999, NXP has led the way with LFPAK, our ground-breaking solution for high reliability, high performance MOSFETs
in a variety of commercial, industrial and automotive applications.
The first products were in the Power-SO8 compatible LFPAK56, developed as a ‘true’ power package. Design and
construction were optimized to give the best thermal and electrical performance, cost and reliability.
As industries trend toward miniaturization, LFPAK is still the answer and our LFPAK33 is the ideal solution for the popular
3.3 x 3.3 mm outline footprint.
Thermal Performance
Thermal
No wires, no glue
Mechanical
175 °C Tj max
Electrical performance
Low package resistance and inductance
Current handling up to 100 A
Cost
Fewer manufacturing steps means costeffective, high volume production
Mechanical robustness
Exposed leads absorb thermal and mechanical
stresses
Electrical
Performance
Manufacturability
2.35
Manufacturability
2.25
0.635 0.617
0.05 (all around)
0.75 0.62
1.05
1.91
2.47
Easy optical inspection of solder joints
0.51
3.9
0.51
0.6
0.83
0.4 (x8)
0.65 (x6)
0.3 (x8)
Low package height
Compatibility
100% compatible with industry-standard
footprints
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0.25 (x6)
Notes : 1. Dimensions in mm
2. Stencil Thickness - 125 μm
Cost
solder land
solder paste
aperture
occupied area
solder resist
Compatibility
MOSFET package evolution
MOSFET packaging technology has changed enormously over the last 40 years in line with ever increasing demands
for smaller, more capable electronic devices.
The first TO220 device was introduced in the 1980s, providing a package that was smaller, less expensive and easier to
assemble than its predecessors. With the rise of surface mount technology towards the end of the decade, a new leadframe
was developed and the D2PAK was born.
The industry then split in two. Some manufacturers preferred the lower cost but more limited options afforded by high volume
IC packages such as the SO8. Others simply shrank the D2PAK in size and developed the DPAK.
When it was introduced, the LFPAK56, which has similar dimensions to an SO8 but was specifically designed to deliver
maximum performance in power applications. Such was its success that it became the first Power-SO8 package
to achieve AEC Q101 qualification. Building on this heritage, NXP has now introduced a miniaturized version, the LFPAK33.
DFN3333
(LFPAK33)
Power-SO8
(LFPAK56)
Miniaturisation
DPAK
(SOT428)
Size, ruggedness,
power density
D2PAK
(SOT404)
TO220
(SOT78)
Cost (but limited
power capability)
Surface
mount
TO-3
SO-8
Size, cost,
ease of
assembly
1970s
1980s
1990s
2000s
2010s
For the most up to date product information, please visit www.nxp.com/mosfets
11
LFPAK rugged construction
Innovative clip-bonding
The silicon die is soldered to the drain tab forming the electrical drain connection. Then the top-clip is soldered to the silicon
die to provide source and gate connections, eliminating bond wires and reducing package resistance and inductance.
Solid Source
Clip
Mold
Slicon DIE
Solder paste
Gate Clip
Copper Drain Tab
The drain tab is soldered directly to the PCB to provide a low electrical resistance path and also low thermal resistance
between the MOSFET and the PCB.
Upper lead-frame bonded directly
to die giving reduced electrical
resistance & inductance in
LFPAK
SOURCE connection
Direct connection between
DRAIN-tab-PCB results in
drastically reduced Rthj-mb
MOSFET assembly techniques
Compare the LFPAK with competitor Power-SO8 types which are often constructed using wire bonding as shown right. LFPAK
uses a combined copper clip which is soldered in a single operation to the gate and source. This reduces spreading resistance,
and gives LFPAK superior electrical and thermal characteristics as well as increased reliability.
Cu wire-bonding
LFPAK eliminates wire-bonding used in many competitor devices.
The combined gate and source clip with soldered die-attach delivers:
maximum mechanical ruggedness and reliability
lowest electrical resistance
lowest thermal resistance
simplified manufacturing process
12
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Resists mechanical and thermal stress
Customer feedback consistently shows that LFPAK is more reliable and rugged than competitor QFN and other micro-lead
devices. The LFPAK56 meets full automotive qualification (AEC Q101), clear proof of its superior ruggedness and reliability in
the toughest conditions.
The following diagram shows the mechanical stresses that can occur when a device is rapidly heated and cooled. Different
rates of expansion and contraction of the PCB and the MOSFET package can cause cracking of the MOSFET moulding as well
as solder joint failures on a QFN device. LFPAK’s construction allows the gate and source pins to ‘flex’ and safely absorb these
stresses.
Solder joint inspection of QFN & micro-lead devices often requires costly X-ray analysis and specialist SMT rework equipment.
LFPAK solder joints can be visually inspected and, if necessary, it is possible to rework an LFPAK device using simple, low-cost
tools.
Mechanical stresses occur when a SMT device
is subject to rapid temperature change or if
the PCB bends due to mechanical strain or
vibration.
The LFPAK’s exposed lead-frame provides
compliance and allows for movement caused
Movement due to thermal and/or mechanical stress in PCB
by thermal expansion and mechanical strain.
QFN sawn & micro-lead packages are fully
encapsulated and do not allow for movement
due to thermal expansion or mechanical
strain. Mechanical & thermal stresses can
lead to solder-joint failures.
Movement due to thermal and/or mechanical stress in PCB
Cracking can also occur in the mould material
around the pins which can lead to moisture
ingress & ionic contamination, causing
degradation and early failure of the MOSFET.
For the most up to date product information, please visit www.nxp.com/mosfets
13
Superior thermal and electrical performance
The LFPAK was developed as a true power package. Package design has been optimized for thermal and electrical
performance, cost and reliability.
Temperature Rating
Current, ID
NXP LFPAK
Typical Wire Bonded Power Pack
Package RDSON
LFPAK summary
Parameter
LFPAK56 *
LFPAK33 **
Junction temperature
175 °C
175 °C
ID (max)
100 A
70 A
Rth (j-c) typ / (max)
0.40 K/W (0.45)
1.44 K/W (1.65)
Maximum power dissipation
137 W
91 W
SOA (ID at 10 V / 100 µs)
325 A
105 A
RDSon (typ, at VGS = 10 V)
0.75 mΩ
2.45 mΩ
Height
1.0 mm
0.85 mm
External leads for optical inspection and reduced stress
√
√
Industry standard footprint
√
√
* Based on PSMN0R9-25YLC
** Based on PSMN2R9-30MLC
14
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Manufacturing and quality
High volume electronics manufacturing environments make use of sophisticated optical inspection equipment to monitor the
quality of their output. Solder joints in particular, are subject to stringent rules and manufacturing results are continuously fed
back into the process control system.
The fully encapsulated nature of QFN and DFN type devices mean that only part of the solder joint is visible without the use
of expensive X-ray equipment. In contrast, the exposed leads of LFPAK are available for detailed solder joint inspection and
assessment.
LFPAK56 – Automotive Qualified
NXP Automotive Power MOSFETs are commonly deployed in many critical applications such as braking, power
steering and engine management, where quality and reliability requirements are paramount.
The LFPAK56’s copper source clip design overcomes the limitations of SO8 and Power-SO8 packages and has been
fully qualified to the stringent AEC Q101 standard for discrete devices.
For the most up to date product information, please visit www.nxp.com/mosfets
15
LFPAK56 (SOT669) soldering and footprint compatibility
There are many power MOSFETs available in the Power-SO8 family. However as there is no generic JEDEC standard for PowerSO8 devices, each device generally has a different PCB footprint. None of the manufacturers’ devices are guaranteed to be
interchangeable with other devices.
The following diagram shows that the package styles and recommended PCB footprints differ significantly from each
manufacturer.
Fairchild
Fairchild
Power 56
Power
56
Vishay
Vishay
PowerPak
PowerPak SO8
SO8
Infineon
Infineon
Super
SO8
SuperSO8
NEC
NEC
HVSON-8
HVSON-8
ON
Semi
ON Semi
DFN6
DFN6
STM
STM
PowerFlat
PowerFlat6x5
6x5
NXP
NXP
LFPAK
LFPAK
NXP’s LFPAK56 (SOT669 & SOT1023) does achieve electrical and mechanical compatibility with these Power-SO8 types.
Each variant may require a different solder-resist, solder-stencil and machine programming unless careful consideration has
been made in advance to design a universal footprint which will allow multiple devices to be fitted to the PCB. The following
diagram shows each manufacturer’s original footprint with their Power-SO8 mounted on it.
Fairchild
Power 56
Vishay
PowerPak SO8
Infineon
Super SO8
NEC
HVSON-8
ON Semi
DFN6
STM
PowerFlat
Renesas
LFPAK
The diagram below shows the manufacturers footprint with an LFPAK56 mounted. This shows how it is possible to fit an
LFPAK56 packaged product instead of a competitor device.
LFPAK56 on
Fairchild
Footprint
LFPAK56 on
Vishay Footprint
LFPAK56 on
Infineon
Footprint
LFPAK56 on
Renesas
Footprint
LFPAK56 on
On-Semi
Footprint
LFPAK56 on
FST Footprint
LFPAK56 on
Renesas LFPAK Footprint
Comprehensive study reports are available on request for LFPAK56 and LFPAK33 packages showing more detailed proof of
compatibility with competitor footprints.
16
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LFPAK56 universal footprint design
Through careful design of the PCB footprint, it is possible to design a universal footprint, such as the one shown below, that
meets the requirements of various Power-SO8 manufacturers. This universal footprint example shows the solder resist and
solder stencil details that allow a PCB designer to create a footprint compatible the majority of Power-SO8 types.
4.7
4.2
0.25
(2�)
0.9
(3�)
0.25
(2�)
0.6
(4�)
3.45
0.6
(3�)
3.5
2.55
2
0.25
(2�)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu − 0.050
0.7
(4�)
1.27
3.81
solder lands
solder paste
125 µm stencil
solder resist
occupied area
sot669_fr
Recommended universal Power-SO8 and LFPAK footprint allows the following device types
to be mounted to a single PCB design:
NXP LFPAK (SOT669 & SOT1023)
Infineon PG-TDSON-8
Fairchild Power 56
Vishay PowerPAK SO-8
NEC 8-pin HVSON
ON Semi SO−8 FL
STM PowerFLAT (6x5)
Renesas LFPAK
The original document can be downloaded at:
http://www.nxp.com/documents/reflow_soldering/sot669_fr.pdf
For the most up to date product information, please visit www.nxp.com/mosfets
17
LFPAK33 (SOT1210) soldering and footprint
compatibility
3.3 x 3.3 mm PCB footprints with package mounted
Through careful design of the PCB footprint, it is possible to design a universal footprint, such as the one shown below, that
meets the requirements of various Power-SO8 manufacturers. This universal footprint example shows the solder resist and
solder stencil details that allow a PCB designer to create a footprint compatible the majority of Power-SO8 types.
NXP
LFPAK33
AOS
DFN3.3x3.3
EMC
EDFN 3x3
Fairchild
MLP08S
Fairchild
PQFN08B
Infineon
TSDSON-8
On Semi
Micro8 Leadless
Vishay
PowerPak 1212-8
An independent study has been performed by Norcott Technologies (www.norcott.co.uk) to check compatibility:
Placement of competitors on NXP universal SOT1210 footprint
Placement of SOT1210 package on competitor footprints
The conclusion of the study is that LFPAK33 is compatible in both scenarios above. The report is available upon request.
18
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LFPAK33 soldering and footprint compatibility
NXP LFPAK33 on competitors’ 3.3 x 3.3 package footprints
NXP
AOS
EMC
Fairchild
Infineon
On Semi
Vishay
Competitors’ 3.3 x 3.3 package on NXP LFPAK33 footprint
NXP LFPAK33
AOS
DFN3.3x3.3
Fairchild
PQFN08B
Infineon
TSDSON-8
EMC
EDFN 3x3
Fairchild
MLP08S
On Semi
Vishay
Micro8 Leadless PowerPak 1212-8
For the most up to date product information, please visit www.nxp.com/mosfets
19
LFPAK33 universal footprint design
The LFPAK33 footprint allows for one PCB design to accommodate:
NXP - LFPAK33 (SOT1210)
NXP - DFN3333-8 (SOT873)
Fairchild - MLP 3.3x3.3
Vishay - POWERPAK® 1212-8
Infineon - PG-TSDSON-8 3.3x3.3
ON SEMI - WDFN8 3.3x3.3
STM - POWERFlat® 3.3x3.3
IR - PQFN 3x3
Other manufacturers’ devices may also be compatible, but have not been verified by this trial.
2.35
2.25
0.635 0.617
0.05 (all around)
0.75 0.62
1.05
1.91
2.47
0.51
3.9
0.51
0.6
0.83
0.4 (x8)
20
solder land
solder paste
aperture
occupied area
solder resist
0.3 (x8)
0.65 (x6)
0.25 (x6)
Notes : 1. Dimensions in mm
2. Stencil Thickness - 125 μm
For the most up to date product information, please visit www.nxp.com/mosfets
sot1210_fr
Two sizes – One performance
LFPAK’s unique construction means that miniaturization does not require a compromise on performance. Thermal simulations
show that LFPAK33 can replace LFPAK56 in a typical application with only a small resultant temperature rise in the silicon.
The following images show relative junction temperatures when the MOSFET is mounted on a 10 x 10 mm copper pad, with
power dissipation of 0.5 W in the MOSFET.
The PCB’s stack-up and copper pad dimensions remain as the dominant factor for system thermal resistance.
m
40
40
m
Temperature (degC)
m
50
m
LFPAK56
• Tj = 41.1° C
Tambient = 25° C
40
40
35
mm
m
m
20
LFPAK33
• Tj = 43.8° C
Tambient = 25° C
Efficiency – LFPAK33 versus LFPAK56
Efficiency
Where space is at a premium, LFPAK33 offers similar efficiency to the LFPAK56.
88%
86%
84%
PSMN9R0-25MLC PSMN3R0-30MLC
82%
PSMN9R8-30MLC PSMN3R0-30MLC
80%
78%
PSMN9R5-30YLC PSMN3R2-30YLC
0
5
10
15
20
25
20
25
30
Load Current in Amp
88%
86%
84%
PSMN3R9-25MLC PSMN3R0-30MLC
82%
PSMN4R4-30MLC PSMN3R0-30MLC
PSMN3R0-30MLC PSMN3R0-30MLC
80%
PSMN4R5-30YLC PSMN3R2-30YLC
78%
0
5
10
15
30
For the most up to date product information, please visit www.nxp.com/mosfets
21
20 V − 25 V N-channel MOSFETs
Package name
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
D2PAK
(SOT404)
PHB66NQ03LT
25
10.5
PHD38N02LT
20
PHD97NQ03LT
25
6.3
2.65
DPAK
(SOT428)
Power SO8
(LFPAK56)
LFPAK33
(SOT1210)
DFN1006
(SOT883)
DFN1006B-3
(SOT883B)
DFN2020-6
(SOT1118)
DFN2020MD-6
(SOT1220)
ID [max] [A]
QG(tot) [typ] (nC)
66
12
44.7
15.1
10.6
75
11.7
3.7
100
48.5
2.7
100
78
51
PH3120L
20
PH2520U
20
PSMN0R9-25YLC
25
0.99
1.25
100
PSMN1R1-25YLC
25
1.15
1.5
100
39
PSMN1R2-25YL
25
1.2
1.85
100
50.6
PSMN1R2-25YLC
25
1.3
1.7
100
31
PSMN1R5-25YL
25
1.5
2.2
100
36
PSMN1R7-25YLC
25
1.9
2.5
100
28
PSMN1R9-25YLC
25
2.05
2.7
100
27
PSMN2R2-25YLC
25
2.4
3.15
100
18
PSMN2R9-25YLC
25
3.15
4.1
100
16
PSMN3R2-25YLC
25
3.4
4.45
100
14
PSMN3R7-25YLC
25
3.9
5.1
97
10.1
PSMN4R0-25YLC
25
4.5
5.8
84
10.9
PSMN6R0-25YLB
25
6.1
7.9
73
9
PSMN6R5-25YLC
25
6.5
8.5
64
8.4
PSMN7R5-25YLC
25
7.4
9.8
56
7
PSMN9R0-25YLC
25
9.1
12.3
46
5.6
PSMN010-25YLC
25
10.6
14
39
5
PSMN012-25YLC
25
12.6
16.6
33
3.8
PH2925U
25
3
100
92
PSMN2R8-25MLC
25
2.8
3.75
70
16.3
PSMN3R9-25MLC
25
4.15
5.55
70
9.7
PSMN9R0-25MLC
25
8.65
11.3
55
5.4
PMZ250UN
20
300
2.28
0.89
PMZ270XN
20
340
2.15
0.72
PMZB290UN
20
350
1
0.89
PMZB290UNE
20
380
1
0.45
PMZB300XN
20
380
1
0.72
PMDPB28UN
20
37
5.8
3.1
PMDPB30XN
20
40
5.3
14.4
PMDPB38UNE
20
46
5
2.9
PMDPB42UN
20
50
5.1
2
PMPB12UN
20
18
11.3
8.8
PMPB15XN
20
21
10.4
13.4
PMPB20UN
20
25
9.4
4.7
Types in bold red represent new products
22
RDSon [max]
@ 4.5 V [mΩ]
For the most up to date product information, please visit www.nxp.com/mosfets
20 V − 25 V N-channel MOSFETs
Package name
SC-70
(SOT323)
SC-75
(SOT416)
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
RDSon [max]
@ 4.5 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
2.2
PMF63UN
20
74
1.9
PMF280UN
20
340
1.02
PMF290XN
20
350
1
0.72
PMR280UN
20
340
0.98
0.89
PMR290XN
20
350
0.97
0.72
PMR290UNE
20
380
0.7
0.45
PSMN006-20K
20
5
32
32
PHKD6N02LT
20
10.9
15.3
PMDT290UNE
20
380
0.8
0.45
SO8
(SOT96-1)
SOT666
TO-236AB
(SOT23)
TSOP6
(SOT457)
TSSOP6
(SOT363)
PMV16UN
20
18
5.8
7.4
PMV28UN
20
32
3.3
5.8
PMV30XN
20
35
3.2
4.9
PMV30UN
20
36
5.7
7.4
PMV31XN
20
37
5.9
5.8
PMV56XN
20
85
3.76
5.4
SI2302DS
20
85
2.5
5.4
PMV170UN
20
165
1.5
1.1
BSH105
20
200
1.05
3.9
PMN34LN
20
34
40
5.7
13.1
PMN55LN
20
65
82
4.1
13.1
PMN25UN
20
27
6
6.4
PMN23UN
20
28
6.3
10.6
PMN27UN
20
34
5.7
10.6
PMGD130UN
20
145
1.3
0.88
PMGD280UN
20
340
0.87
0.89
PMGD290XN
20
350
0.86
0.72
For the most up to date product information, please visit www.nxp.com/mosfets
23
30 V N-channel MOSFETs
Package name
D2PAK
(SOT404)
DPAK
(SOT428)
I2PAK
(SOT226)
Power-SO8
(LFPAK56)
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PSMNR90-30BL
30
1
1.3
120
118
PSMN1R5-30BLE
30
1.5
1.85
120
228
PSMN1R8-30BL
30
1.8
2.1
100
83
101
PSMN1R6-30BL
30
1.9
2.2
100
PSMN2R0-30BL
30
2.1
2.9
100
55
PSMN2R7-30BL
30
3
3.7
100
32
PSMN3R4-30BL
30
3.3
3.8
100
31
PSMN3R4-30BLE
30
3.4
5
120
81
PSMN4R3-30BL
30
4.1
5.2
100
19
PSMN017-30BL
30
17
23.3
32
5.1
PSMN022-30BL
30
22.6
29.6
30
4.4
PHD101NQ03LT
30
5.5
75
23
PHD71NQ03LT
30
10
75
13.2
PSMN1R1-30EL
30
1.3
1.4
120
118
PSMN017-30EL
30
17
23.4
32
5.1
PSMN1R0-30YLC
30
1.15
1.4
100
50
PSMN1R2-30YLC
30
1.25
1.65
100
38
PSMN1R3-30YL
30
1.3
1.95
100
46.6
36.2
PSMN1R5-30YL
30
1.5
1.9
100
PSMN1R5-30YLC
30
1.55
2.05
100
30
PSMN1R7-30YL
30
1.7
2.1
100
36.2
PSMN2R0-30YL
30
2
2.63
100
30
PSMN2R0-30YLE
30
2
3.5
100
87
PSMN2R2-30YLC
30
2.15
2.8
100
26
PSMN2R5-30YL
30
2.4
3.16
100
27
PSMN2R6-30YLC
30
2.8
3.65
100
18
PSMN3R0-30YL
30
3
4.04
100
21
PSMN3R2-30YLC
30
3.5
4.55
100
14.2
PSMN3R5-30YL
30
3.5
4.61
100
19
PSMN3R7-30YLC
30
3.95
5.15
100
14
17.6
PSMN4R0-30YL
30
4
5.25
100
PSMN4R1-30YLC
30
4.35
5.7
92
11
PSMN4R5-30YLC
30
4.8
6.1
84
9.6
PSMN5R0-30YL
30
5
6.7
91
14.1
PSMN6R0-30YL
30
6
7.87
79
11
PSMN5R9-30YL
30
6.1
9
78
10.5
PSMN6R0-30YLB
30
6.5
8.1
71
9
PSMN7R0-30YL
30
7
9.1
76
10
7.9
PSMN7R0-30YLC
30
7.1
8.9
61
PSMN8R0-30YLC
30
7.9
10
54
7
PSMN9R0-30YL
30
8
11.03
61
8.7
PSMN8R0-30YL
30
8.3
12.2
62
9
PSMN9R1-30YL
30
9.1
13.6
57
8.4
PSMN9R5-30YLC
30
9.8
12.1
44
5
PSMN011-30YL
30
10.7
16.1
51
7.3
PSMN011-30YLC
30
11.6
14.5
37
4.9
PSMN013-30YLC
30
13.6
16.9
32
4
Types in bold red represent new products
24
RDSon [max]
@ 4.5 V [mΩ]
For the most up to date product information, please visit www.nxp.com/mosfets
Wide SOA
Wide SOA
Wide SOA
30 V N-channel MOSFETs
Package name
LFPAK33
(SOT1210)
DFN1006-3
(SOT883)
DFN1006B-3
(SOT883B)
DFN2020-6
(SOT1118)
DFN2020MD-6
(SOT1220)
SC-70
(SOT323)
SC-73
(SOT223)
SC-75
(SOT416)
SO8
(SOT96-1)
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
RDSon [max]
@ 4.5 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PSMN2R9-30MLC
30
2.95
3.8
70
16.7
PSMN3R0-30MLC
30
3.15
4.05
70
16.1
PSMN4R4-30MLC
30
4.65
6
70
10.6
PSMN7R0-30MLC
30
7
9
67
8.2
PSMN9R8-30MLC
30
9.8
12.4
50
5
PSMN013-30MLC
30
13.6
16.9
39
3.7
18.1
PSMN020-30MLC
30
PMZ350XN
30
27
31.8
4.6
420
1.87
0.65
PMZ390UN
PMZ1000UN
30
460
1.78
0.89
30
1000
0.48
0.89
PMZB380XN
30
460
0.93
0.65
PMZB370UNE
30
490
0.9
0.77
PMZB420UN
30
490
0.9
0.75
NX3008NBKMB
30
1400
0.53
0.52
PMDPB70EN
30
88
4.5
3
PMDPB56XN
30
73
4
1.9
PMDPB95XNE
30
120
3.1
1.65
PMPB11EN
30
14.5
16.5
13
13.7
19.5
57
PMPB20EN
30
24.5
10.4
7.2
PMPB16XN
30
21
10.3
7.2
PMPB33XN
30
47
5.5
5.1
PSMN9R0-30LL
30
13
21
20.6
12.2
9
PSMN013-30LL
30
13
19
21
PSMN017-30LL
30
17
25
15
10
PMF87EN
30
80
110
1.9
3.1
4500
0.34
NX3020NAKW
30
5200
0.18
PMF77XN
30
97
1.63
1.9
PMF250XN
30
300
0.9
0.74
PMF370XN
30
440
0.87
0.65
PMF400UN
30
480
0.83
0.89
NX3008NBKW
30
1400
0.35
0.52
PMT21EN
30
21
26
7.4
12.5
36
6
9.6
10
24
PMT29EN
30
29
BSP030
30
30
BSP100
30
100
200
6
6
NX3020NAKT
30
4500
5200
0.18
0.34
PMR370XN
30
440
0.84
0.65
PMR400UN
30
480
0.8
0.89
NX3008NBKT
30
1400
0.35
0.52
PHK31NQ03LT
30
4.4
5.6
30.4
33
PSMN005-30K
30
5.5
8
PHK28NQ03LT
30
6.5
7.7
23.7
30.3
34
PHK18NQ03LT
30
8.9
12.5
20.3
10.6
SI4410DY
30
13.5
20
10
21.5
PHK13N03LT
30
20
26
13.8
10.7
PHKD13N03LT
30
20
26
10.4
10.7
14.6
PHN203
30
30
55
6.3
PHN210T
30
100
200
3.4
PHC21025
30
250
400
PHK12NQ03LT
30
14
6
10
11.8
Types in bold red represent new products
For the most up to date product information, please visit www.nxp.com/mosfets
25
30 V N-channel MOSFETs
Package name
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
RDSon [max]
@ 4.5 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
NX3020NAKV
30
4500
5200
0.2
0.34
NX3008NBKV
30
1400
0.4
0.52
Type number
SOT666
TO-220AB
(SOT78)
TO-236AB
(SOT23)
TSOP6
(SOT457)
TSSOP6
(SOT363)
26
PSMN1R1-30PL
30
1.3
1.4
120
118
PSMN1R6-30PL
30
1.7
2.1
100
101
PSMN1R8-30PL
30
1.8
2.3
100
83
PSMN2R0-30PL
30
2.1
2.8
100
55
PSMN2R7-30PL
30
2.7
3.6
100
32
PSMN3R4-30PL
30
3.4
4.1
100
31
PSMN4R3-30PL
30
4.3
6.2
100
19
PHP36N03LT
30
17
22
43.4
18.5
5.1
PSMN017-30PL
30
17
23.4
32
PSMN022-30PL
30
22
34
30
4.4
PMV22EN
30
22
29
5.2
8.6
PMV37EN
30
36
47
3.1
6.5
PMV45EN
30
42
54
5.4
9.4
PMV60EN
30
55
72
4.7
9.4
PMV90EN
30
84
115
2.1
2.6
PMV117EN
30
117
190
2.5
4.6
SI2304DS
30
117
190
1.7
4.6
BSH108
30
120
1.9
6.4
PMV20XN
30
25
4.8
6.4
PMV40UN
30
47
4.9
9.3
PMV185XN
30
250
1.2
0.87
BSH103
30
400
NX3008NBK
30
1400
0.4
0.52
12.4
2.1
PMN20EN
30
20
25
6.7
PMN25EN
30
23
31
6.2
9.6
PMN35EN
30
31
43
5.1
6.2
13.8
PMN40LN
30
38
45
5.4
PMN38EN
30
38
46
5.4
6.1
PMN45EN
30
40
50
5.2
6.1
47
PMN49EN
30
60
4.6
8.8
PMN22XN
30
27
5.7
6.4
PMN34UN
30
46
4.9
9.9
NX3020NAKS
30
5200
0.18
0.34
4500
PMGD175XN
30
225
1
0.7
PMG370XN
30
440
0.96
0.65
PMGD370XN
30
440
0.74
0.65
PMGD400UN
30
480
0.71
0.89
NX3008NBKS
30
1400
0.35
0.52
PMGD8000LN
30
0.125
0.35
For the most up to date product information, please visit www.nxp.com/mosfets
40 V − 50 V N-channel MOSFETs
Package name
D2PAK
(SOT404)
I2PAK
(SOT226)
Power-SO8
(LFPAK56)
TO-220AB
(SOT78)
TO-236AB
(SOT23)
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PSMN1R1-40BS
40
1.3
120
136
PSMN2R2-40BS
40
2.2
100
130
PSMN2R8-40BS
40
2.9
100
71
PSMN4R5-40BS
40
4.5
100
35
PSMN8R0-40BS
40
7.6
77
21
PSMN1R5-40ES
40
1.6
120
136
PSMN1R6-40YLC
40
1.55
100
59
PSMN1R8-40YLC
40
1.8
100
45
PSMN2R6-40YS
40
2.8
100
63
PSMN3R3-40YS
40
3.3
100
49
PH4840S
40
4.1
94.5
67
PSMN4R0-40YS
40
4.2
100
38
PSMN5R8-40YS
40
5.7
90
28.8
PSMN8R3-40YS
40
8.6
70
20
PSMN014-40YS
40
14
46
12
PSMN023-40YLC
40
23
24
4.3
PSMN1R5-40PS
40
1.6
120
136
PSMN1R9-40PL
40
1.7
150
PSMN2R2-40PS
40
2.1
100
PSMN2R1-40PL
40
2.2
150
PSMN2R8-40PS
40
2.8
100
110
71
PSMN4R5-40PS
40
4.6
100
35
PSMN8R0-40PS
40
7.6
77
17
BSN20
50
15000
0.173
Types in bold red represent new products - Types in bold green represent products in development
For the most up to date product information, please visit www.nxp.com/mosfets
27
55 V − 60 V N-channel MOSFETs
Package name
D2PAK
(SOT404)
DPAK
(SOT428)
Power-SO8
(LFPAK56)
SC-70
(SOT323)
SC-73
(SOT223)
TO-220AB
(SOT78)
DFN1006-3
(SOT883)
DFN1006B-3
(SOT883B)
DFN2020MD-6
(SOT1220)
I2PAK
(SOT226)
SC-70
(SOT323)
SC-75
(SOT416)
28
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PHB191NQ06LT
55
3.7
75
95.6
PHB21N06LT
55
70
19
PHB20N06T
55
75
20.3
11
PSMN1R7-60BS
60
2
120
137
PSMN3R0-60BS
60
3.2
100
130
PSMN004-60B
60
3.6
75
168
PSMN4R6-60BS
60
4.4
100
70.8
PSMN7R6-60BS
60
7.8
92
38.7
PSMN015-60BS
60
14.8
50
20.9
PHB32N06LT
60
37
34
17
PHD20N06T
55
77
18
11
PH955L
55
8.3
62.5
42
PSMN5R5-60YS
60
5.2
100
56
PSMN7R0-60YS
60
6.4
89
45
PSMN8R5-60YS
60
8
76
39
PSMN012-60YS
60
11.1
59
28.4
PSMN017-60YS
60
15.7
44
20
PSMN030-60YS
60
24.7
29
13
BSH121
55
0.3
1
PHT6N06T
55
PHT6N06LT
55
5.5
4.5
PHT8N06LT
55
7.5
11.2
PHP191NQ06LT
55
3.7
75
95.6
PHP20N06T
55
75
20.3
11
PMZ760SN
60
900
1.22
1.05
2N7002BKM
60
1600
0.45
0.5
PMZB790SN
60
940
0.65
1.05
2N7002BKMB
60
1600
0.45
0.5
PMPB40SNA
60
43
12.9
12.1
PSMN2R0-60ES
60
2.2
120
137
PSMN3R0-60ES
60
3
100
130
PMF780SN
60
920
0.57
1.05
BSS138BKW
60
1600
0.32
0.6
2N7002BKW
60
1600
0.31
0.5
2N7002PW
60
1600
0.31
0.6
BSS138PW
60
1600
0.32
0.72
PMF3800SN
60
4500
0.26
0.85
NX7002AKW
60
4500
0.17
0.33
PMR780SN
60
920
0.55
1.05
2N7002BKT
60
1600
0.29
0.5
2N7002PT
60
1600
0.31
0.6
For the most up to date product information, please visit www.nxp.com/mosfets
150
5.5
55 V − 60 V N-channel MOSFETs
Package name
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
2N7002BKV
60
1600
0.34
0.5
2N7002PV
60
1600
0.35
0.6
PSMN2R0-60PS
60
2.2
120
137
PSMN2R5-60PL
60
2.6
150
PSMN2R6-60PS
60
2.9
150
PSMN3R0-60PS
60
3
100
PSMN3R3-60PS
60
3.4
130
PSMN3R9-60PS
60
3.9
130
PSMN4R2-60PL
60
4.3
130
PSMN4R6-60PS
60
4.6
100
70.8
PSMN7R6-60PS
60
7.8
92
38.7
PSMN015-60PS
60
14.8
50
20.9
BSH111
55
0.335
1
BSS138BK
60
1600
0.36
0.6
2N7002CK
60
1600
0.3
1.09
2N7002BK
60
1600
0.35
0.5
2N7002P
60
1600
0.36
0.6
BSS138P
60
1600
0.36
0.72
2N7002F
60
2000
0.475
0.69
2N7002E
60
3000
0.385
0.69
NX7002AK
60
4500
0.19
0.33
2N7002
60
5000
0.3
PMBF170
60
5000
0.3
NXS7002AK
60
5000
0.19
0.33
PMGD780SN
60
920
0.49
1.05
BSS138BKS
60
1600
0.32
0.6
2N7002BKS
60
1600
0.3
0.5
2N7002PS
60
1600
0.32
0.6
BSS138PS
60
1600
0.32
0.72
NX7002AKS
60
4500
0.17
0.33
Type number
SOT666
TO-220AB
(SOT78)
TO-236AB
(SOT23)
TSSOP6
(SOT363)
130
Types in bold green represent products in development
For the most up to date product information, please visit www.nxp.com/mosfets
29
75 V − 80 V N-channel MOSFETs
Package name
D2PAK
(SOT404)
TO-220AB
(SOT78)
I2PAK
(SOT226)
Power-SO8
(LFFPAK56)
TO-220AB
(SOT78)
30
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PSMN005-75B
75
5
75
165
PSMN008-75B
75
8.5
75
122.8
PHB110NQ08T
75
9
75
113.1
PHB29N08T
75
27
19
PSMN2R8-80BS
80
3
120
139
PSMN3R3-80BS
80
3.5
120
111
PSMN4R4-80BS
80
4.5
100
125
PSMN5R0-80BS
80
5.1
100
101
PSMN6R5-80BS
80
6.9
100
71
PSMN8R7-80BS
80
8.7
90
52
PSMN012-80BS
80
11
74
36
PSMN017-80BS
80
17
50
26
PSMN050-80BS
80
46
22
11
PSMN005-75P
75
5
75
165
PHP79NQ08LT
75
16
73
30
PHP29N08T
75
27
19
PSMN3R3-80ES
80
3.3
120
139
PSMN3R5-80ES
80
3.5
120
139
PSMN4R3-80ES
80
4.3
120
111
PSMN8R2-80YS
80
8.5
82
55
PSMN011-80YS
80
11
67
45
PSMN013-80YS
80
12.9
60
37
PSMN018-80YS
80
18
45
26
PSMN026-80YS
80
27.5
34
20
PSMN045-80YS
80
45
24
12.5
PSMN3R3-80PS
80
3.3
120
139
PSMN3R5-80PS
80
3.5
120
139
PSMN4R4-80PS
80
4.1
100
112
PSMN4R3-80PS
80
4.3
120
111
PSMN5R0-80PS
80
4.7
100
87
PSMN6R5-80PS
80
6.9
100
71
PSMN8R7-80PS
80
8.7
90
52
PSMN012-80PS
80
11
74
36
PSMN017-80PS
80
17
50
26
PSMN050-80PS
80
46
22
9
For the most up to date product information, please visit www.nxp.com/mosfets
100 V N-channel MOSFETs
Package name
D2PAK
(SOT404)
DPAK
(SOT428)
I PAK
(SOT226)
2
Power-SO8
(LFPAK56)
SC-73
(SOT223)
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PSMN3R8-100BS
100
3.9
120
170
PSMN4R8-100BSE
100
4.8
120
196
PSMN5R6-100BS
100
5.6
100
141
PSMN7R6-100BSE
100
7.6
75
128
PSMN7R0-100BS
100
6.8
100
125
Type number
PSMN009-100B
100
8.8
75
156
PSMN9R5-100BS
100
9.6
89
82
PSMN013-100BS
100
13.9
68
59
PSMN015-100B
100
15
75
90
PSMN016-100BS
100
16
57
49
PHB45NQ10T
100
25
47
61
PSMN027-100BS
100
26.8
37
30
PHB47NQ10T
100
28
47
66
PSMN034-100BS
100
34.5
32
23.8
PHB27NQ10T
100
50
28
30
PHB18NQ10T
100
90
18
21
PSMN025-100D
100
25
47
61
PSMN4R3-100ES
100
4.3
120
170
PSMN5R0-100ES
100
5
120
170
PSMN7R0-100ES
100
6.8
100
125
PSMN8R5-100ES
100
8.5
100
111
PSMN013-100ES
100
13.9
68
59
PSMN012-100YS
100
12
60
64
PSMN013-100YSE
100
13
58
75
PSMN016-100YS
100
16.3
51
54
PSMN020-100YS
100
20.5
43
41
PH20100S
100
23
34.3
39
PSMN028-100YS
100
27.5
42
33
PSMN039-100YS
100
39.5
28.1
23
PSMN069-100YS
100
72.4
17
14
PHT6NQ10T
100
90
6.5
21
PHT4NQ10T
100
250
3.5
7.4
BSP110
100
0.52
PHT4NQ10LT
100
3.5
Wide SOA
Wide SOA
Wide SOA
6.8
Types in bold red represent new products - Types in bold green represent products in development
For the most up to date product information, please visit www.nxp.com/mosfets
31
100 V N-channel MOSFETs
Package name
SO8
(SOT96-1)
TO-220AB
(SOT78)
TO-220F
SOT186A)
TO-236AB
(SOT23)
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PHK12NQ10T
100
28
11.6
35
PSMN038-100K
100
38
PHKD3NQ10T
100
90
3
21
PSMN4R3-100PS
100
4.3
120
170
PSMN5R0-100PS
100
5
120
170
PSMN5R6-100PS
100
5.6
100
141
PSMN7R0-100PS
100
6.8
100
125
PSMN8R5-100PS
100
8.5
100
111
PSMN009-100P
100
8.8
75
156
PSMN9R5-100PS
100
9.6
89
82
PSMN013-100PS
100
13.9
68
59
PSMN015-100P
100
15
75
90
PSMN016-100PS
100
16
57
49
PHP45NQ10T
100
25
47
61
PSMN027-100PS
100
26.8
37
30
PSMN034-100PS
100
34.5
32
23.8
PHP18NQ10T
100
90
18
21
PSMN4R6-100XS
100
4.6
70.4
153
PSMN5R0-100XS
100
5
67.5
153
PSMN5R6-100XS
100
5.6
61.8
145
PSMN7R0-100XS
100
6.8
55
121
PSMN8R5-100XS
100
8.5
49
100
PSMN9R5-100XS
100
9.6
44.2
81.5
PSMN013-100XS
100
13.9
35.2
57.5
PSMN016-100XS
100
16
32.1
46.2
PSMN027-100XS
100
26.8
23.4
30
PMV213SN
100
250
1.9
7
BSH114
100
500
0.85
4.6
BSS123
100
6000
0.15
BST82
100
Type number
Types in bold red represent new products
32
For the most up to date product information, please visit www.nxp.com/mosfets
43
0.19
105 V − 150 V N-channel MOSFETs
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PHP45NQ11T
105
25
47
60
PSMN015-110P
110
15
75
90
PHP27NQ11T
110
50
27.6
30
PHP23NQ11T
110
70
23
22
PHP18NQ11T
110
90
18
21
PSMN6R3-120PS
120
6.7
70
207
PSMN7R8-120PS
120
7.8
70
168
TO-220F
(SOT186A)
PSMN7R8-120XS
120
7.8
53
168
I2PAK
(SOT226)
PSMN7R8-120ES
120
7.8
70
168
PSMN030-150B
150
30
55.5
98
PSMN035-150B
150
35
50
79
PHB45NQ15T
150
42
45.1
32
DPAK
(SOT428)
PSMN063-150D
150
63
29
55
Power-SO8
(LFPAK56)
PSMN059-150Y
150
59
43
27.9
PHK5NQ15T
150
75
5
29
PSMN085-150K
150
85
PSMN030-150P
150
30
55.5
98
PSMN035-150P
150
35
50
79
PHP30NQ15T
150
63
29
55
PHP28NQ15T
150
65
28.5
24
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
ID [max] [A]
QG(tot) [typ] (nC)
PSMN057-200B
200
57
39
96
PSMN070-200B
200
70
35
77
PHB33NQ20T
200
77
32.7
32.2
Package name
TO-220AB
(SOT78)
D2PAK
(SOT404)
SO8
(SOT96)
TO-220AB
(SOT78)
Type number
40
Types in bold green represent products in development
200 V − 300 V N-channel MOSFETs
Package name
D2PAK
(SOT404)
PHB20NQ20T
200
130
20
65
DFN3333-8
(SOT873-1)
PML260SN
200
294
8.8
13.3
PML340SN
220
386
7.3
13.2
DPAK
(SOT428)
PSMN130-200D
200
130
20
65
PHD9NQ20T
200
400
8.7
24
Power-SO8
(LFPAK56)
PSMN102-200Y
200
102
21.5
30.7
SC-73
(SOT223)
BSP122
200
2500
0.55
SO8
(SOT96-1)
PSMN165-200K
200
165
40
PHC2300
300
6000
6.24
SOT89
BSS87
200
3000
0.4
PSMN057-200P
200
57
39
PSMN070-200P
200
70
35
77
PHP33NQ20T
200
77
32.7
32.2
PHP20NQ20T
200
130
20
65
PHP9NQ20T
200
400
8.7
24
BSP89
240
5000
0.375
BSP126
250
5000
0.375
BSP130
300
6000
0.35
TO-220AB
(SOT78)
SC-73
(SOT223)
96
For the most up to date product information, please visit www.nxp.com/mosfets
33
P-channel MOSFETs
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
BSS84AKM
-50
BSS84AKMB
-50
NX3008PBKMB
-30
PMZB350UPE
Package name
Type number
DFN1006-3
RDSon [max]
@ VGS = 4.5 V (mΩ)
ID [max] [A]
QG(tot) [typ] (nC)
7500
-0.23
0.26
7500
-0.23
0.26
4100
-0.3
0.55
-20
450
-1.4
1.3
PMZB670UPE
-20
850
-0.68
0.76
PMDPB70XP
-30
87
-3.8
5.2
PMDPB58UPE
-20
67
-4.5
6.3
PMDPB55XP
-20
70
-4.5
16.5
PMDPB65UP
-20
70
-3.5
4.5
PMDPB70XPE
-20
79
-4.2
5
PMDPB80XP
-20
102
-3.7
5.7
PMDPB85UPE
-20
103
-3.7
5.4
PMPB27EP
-30
29
43
-8.8
30
PMPB48EP
-30
50
76
-6.8
17
PMPB33XP
-20
37
-7.9
15
PMPB15XP
-12
19
-11.8
67
BSS84AKW
-50
-0.15
0.26
NX3008PBKW
-30
4100
-0.2
0.55
200
-1
2.6
DFN1006B-3
DFN2020-6
DFN2020MD-6
SC-70
7500
PMF170XP
-20
BSP230
-300
17000
BSP225
-250
15000
-0.225
BSP220
-200
12000
-0.225
BSP250
-30
250
BSS84AKT
-50
7500
NX3008PBKT
-30
PMR670UPE
-20
PMK30EP
-30
PMK35EP
SC-73
SC-75
SO8
SOT666
SOT89
34
400
-0.15
0.26
4100
-0.2
0.55
850
-0.48
0.76
19
30
-14.9
50
-30
19
35
-14.9
42
250
400
PHP225
-30
PMK50XP
-20
50
-7.9
10
PHK04P02T
-16
120
-4.66
7.2
BSS84AKV
-50
-0.17
0.26
NX3008PBKV
-30
4100
-0.22
0.55
PMDT670UPE
-20
850
-0.55
0.76
BSS192
-240
For the most up to date product information, please visit www.nxp.com/mosfets
7500
12000
10
-0.2
P-channel MOSFETs
Package name
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
BSH201
-60
2500
-0.3
BSS84AK
-50
7500
-0.18
BSS84
-50
10000
-0.13
BSH202
-30
900
-0.52
BSH203
-30
900
-0.47
Type number
RDSon [max]
@ VGS = 4.5 V (mΩ)
ID [max] [A]
QG(tot) [typ] (nC)
0.26
2.2
NX3008PBK
-30
4100
-0.23
0.55
PMV32UP
-20
36
-4
15.5
PMV33UPE
-20
36
-5.3
14.7
PMV48XP
-20
55
-3.5
8.5
PMV50UPE
-20
66
-3.7
10.5
PMV65XP
-20
74
-4.3
7.7
NX2301P
-20
120
-2
4.5
PMV160UP
-20
210
-1.2
3.3
BSH205
-12
PMN27XPE
-20
30
-5.7
PMN27UP
-20
32
-5.7
21
PMN34UP
-20
40
-5
15.5
PMN40UPE
-20
43
-6
15.6
PMN42XPE
-20
46
-5.7
11.5
PMN48XP
-20
55
-4.1
8.7
PMN50UPE
-20
66
-4
10.5
PMN70XPE
-20
85
-4.1
5.2
PMN80XP
-20
102
-3.2
5
BSH207
-12
BSS84AKS
-50
NX3008PBKS
-30
PMG85XP
-20
TO-236AB
-0.75
15
TSOP6
TSSOP6
-1.52
7500
-0.16
0.26
4100
-0.2
0.55
115
-2
4.8
For the most up to date product information, please visit www.nxp.com/mosfets
35
Multi-chip MOSFETs
Package name
DFN2020-6
(SOT118)
TSSOP6
(SOT363)
36
Type number
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
RDSon [max]
@ VGS = 4.5 V (mΩ)
ID [max] [A]
PMDPB70XP
-30
87
-3.8
PMCPB5530X
-20
34
5.3
PMDPB58UPE
-20
67
-4.5
PMDPB55XP
-20
70
-4.5
PMDPB65UP
-20
70
-3.5
PMDPB70XPE
-20
79
-4.2
PMDPB80XP
-20
102
-3.7
PMDPB85UPE
-20
103
-3.7
PMDPB28UN
20
37
5.8
PMDPB30XN
20
40
5.3
PMDPB38UNE
20
46
5
PMDPB42UN
20
50
5.1
PMDPB70EN
30
88
4.5
PMDPB56XN
30
73
4
PMDPB95XNE
30
120
3.1
BSS84AKS
-50
NX3008CBKS
-30
1400
0.35
NX3008PBKS
-30
4100
-0.2
PMGD130UN
20
145
1.3
PMGD290XN
20
350
0.86
NX3020NAKS
30
5200
0.18
PMGD175XN
30
225
1
PMGD370XN
30
440
0.74
PMGD400UN
30
480
0.71
NX3008NBKS
30
1400
0.35
57
7500
4500
-0.16
PMGD8000LN
30
PMGD780SN
60
920
1400
0.49
BSS138BKS
60
1600
2200
0.32
2N7002BKS
60
1600
0.3
2N7002PS
60
1600
0.32
BSS138PS
60
1600
0.32
NX7002AKS
60
4500
0.17
For the most up to date product information, please visit www.nxp.com/mosfets
0.125
Multi-chip MOSFETs
Package name
VDS
[max] [V]
RDSon [max]
@ 10 V [mΩ]
NX1029X
-50
1600
BSS84AKV
-50
7500
NX3008CBKV
-30
1400
0.4
NX3008PBKV
-30
4100
-0.22
PMDT290UCE
-20
380
0.8
PMDT670UPE
-20
850
-0.55
PMDT290UNE
20
380
0.8
NX3020NAKV
30
5200
0.2
NX3008NBKV
30
1400
0.4
2N7002BKV
60
1600
0.34
2N7002PV
60
1600
0.35
PHP225
-30
250
PHKD6N02LT
20
PHKD13N03LT
30
PHN203
30
PHN210T
30
PHC21025
30
250
400
Type number
SOT666
SO8
(SOT96-1)
RDSon [max]
@ VGS = 4.5 V (mΩ)
ID [max] [A]
0.33
-0.17
4500
400
10.9
20
26
10.4
30
55
6.3
100
200
3.4
PHKD3NQ10T
100
90
PHC2300
300
6000
3
PSMN part numbering
Prefix
P
N- or P-channel
S
M
«Power Silicon Max»
N
RDSon with Vgs = 10 V
1
R
7
Package type
Gate threshold
voltage
NextPower
special features
Y
L
C
25 = 25 V
B = D2PAK
L=
Logic-level
(16V Vgs)
B = optimized for
low Qgd and/or high
Qoss
30 = 30 V
D = DPAK
S=
Standard-level
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