BUT11APX-1200,127

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time VBE = 0 V 0.15 15.5 170 1200 1200 550 6 10 32 1.0 300 V V V A A W V PINNING - SOT186A PIN Ths ≤ 25 ˚C IC = 2 A; IB = 0.4 A IC = 3 A; VCE = 5 V IC = 2.5 A; IB1 = 0.5 A PIN CONFIGURATION SYMBOL DESCRIPTION c case 1 base 2 collector 3 emitter ns b case isolated e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -65 - 1200 550 1200 6 10 3 5 32 150 150 V V V A A A A W ˚C ˚C TYP. MAX. UNIT - 3.95 K/W 55 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air April 1999 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 10 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 550 - 0.1 - mA V 13 20 13 - 0.15 0.91 25 30 18.5 15.5 1.0 1.5 47 25 - V V TYP. MAX. UNIT - 0.5 3 0.3 µs µs µs 170 1.5 300 µs ns - 1.8 300 µs ns STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 ICES ICES Collector cut-off current IEBO VCEOsust Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFEsat hFEsat Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 2.0 A; IB = 0.4 A IC = 2.0 A; IB = 0.4 A IC = 1 mA; VCE = 5 V IC = 500 mA; VCE = 5 V IC = 2 A; VCE = 5 V IC = 3.0 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified8 SYMBOL ton ts tf PARAMETER CONDITIONS Switching times (resistive load) ICon = 2.5 A; IBon = -IBoff = 0.5 A; RL = 75 ohms; VBB2 = 4 V; Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH; -VBB = 5 V ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). April 1999 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 ICsat 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton tf toff Oscilloscope IB1 IB Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IB2 Fig.4. Switching times waveforms with resistive load. Fig.1. Test circuit for VCEOsust. VCC IC / mA LC 250 200 IBon LB 100 T.U.T. -VBB 0 min VCE / V VCEOsust Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH Fig.2. Oscilloscope display for VCEOsust. ICsat VCC 90 % IC RL 10 % VIM RB 0 tf T.U.T. t ts IB IB1 tp t T - IB2 Fig.6. Switching times waveforms with inductive load. Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. April 1999 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 120 BUT11APX-1200 Normalised Power Derating PD% VBEsat/V 110 1.4 100 1.2 90 80 1.0 70 0.8 60 50 0.6 40 30 0.4 20 0.2 10 0 0 20 40 60 80 100 Tmb / C 120 0.0 140 0.1 1 IC/A 10 Fig.10. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4. Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) h FE VCEsat/V 100 0.5 5V 0.4 0.3 10 0.2 Tj = 25 C 1V 0.1 0.0 1 0.01 0.1 1 10 0.1 1 IC / A 10 IC/A Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE Fig.11. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.8 Zth / (K/W) BU1706AX 10 VCEsat/V 2.0 0.5 1.6 IC=1A 2A 3A 1 0.2 0.1 0.05 0.1 0.02 4A 1.2 0.8 PD tp D= tp T 0.01 0.4 0.0 0.01 D=0 0.001 0.10 1.00 1u 10.00 IB/A 10u 100u 1m 10m 100m t/s 1 10 100 Fig.12. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.9. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C. April 1999 t T 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 IC (A) VCC 11 10 9 8 7 LC 6 VCL(RBSOAR) 5 IBon 4 PROBE POINT LB 3 2 -VBB T.U.T. 1 0 0 200 400 600 800 1,000 1,200 1,400 VCEclamp (V) Fig.13. Reverse bias safe operating area. Tj ≤ Tj max April 1999 Fig.14. Test circuit for reverse bias safe operating area. Vcl ≤ 1200V; Vcc = 150V; VBB = -5V; LB = 1µH;Lc = 200µH 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 max. 19 max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.15. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 1999 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1999 7 Rev 1.000