BUT12AX,127

BUT12AX Silicon diffused power transistor Rev. 01 — 16 June 2004 Product data M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features ■ Isolated package ■ Fast switching. 1.3 Applications ■ Inverters ■ Motor control systems ■ Switching regulators ■ DC-to-DC converters. 1.4 Quick reference data ■ VCESM ≤ 1000 V ■ Ptot ≤ 23 W ■ IC ≤ 8 A ■ tf ≤ 0.8 µs. 2. Pinning information Table 1: Pinning - SOT186A (TO-220F), simplified outline and symbol Pin Description 1 base (b) 2 collector (c) 3 emitter (e) mb mounting base; isolated Simplified outline Symbol 2 mb 1 MBB008 1 2 3 MBK110 SOT186A (TO-220F) 3 BUT12AX Philips Semiconductors Silicon diffused power transistor 3. Ordering information Table 2: Ordering information Type number BUT12AX Package Name Description Version TO-220F Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3 leads. 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM peak collector-emitter voltage VBE = 0 V - 1000 V VCEO collector-emitter voltage base open circuit - 450 V IC collector current Figure 2 and 3 - 8 A - 5 A Figure 3 - 20 A - 4 A - 6 A ICsat collector saturation current ICM peak collector current IB base current (DC) IBM peak base current Th = 25 °C; Figure 1 [1] Ptot total power dissipation - 23 W Tstg storage temperature −65 +150 °C Tj junction temperature - +150 °C [1] Mounted without heatsink compound. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data Rev. 01 — 16 June 2004 2 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor 03aa13 120 003aaa454 10 IC (A) Pder (%) 8 80 6 4 40 2 0 0 50 100 150 Th (°C) 200 0 0 400 800 VCE (V) 1200 VBE = −1 V to −5 V; Th = 100 °C. P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of heatsink temperature. Fig 2. Reverse bias safe operating area; continuous collector current as a function of collector-emitter voltage. 003aaa455 102 IC (A) ICM IC 10 2 1 1 10−1 10−2 1 102 10 VCE (V) 103 Th = 25 °C 1 - Region of permissible DC operation. 2 - Permissible extension for repetitive operation. Fig 3. Forward bias safe operating area; continuous and peak collector currents as a function of collector-emitter voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data Rev. 01 — 16 June 2004 3 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-h) Rth(j-a) [1] Conditions thermal resistance from junction to heatsink Min Typ Max Unit Mounted without heatsink compound [1] - - 5.5 K/W Mounted with heatsink compound [1] - - 3.9 K/W - 55 - K/W Min Typ Max Unit thermal resistance from junction to ambient External heatsink connected to mounting base. 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Static characteristics VCEOsus collector-emitter sustaining voltage IC = 100 mA; IBoff = 0 A; L = 25 mH; Figure 9 and 10 400 - - V VCEsat collector-emitter saturation voltage IC = 5 A; IB = 1 A; Figure 5 - - 1.5 V VBEsat base-emitter saturation voltage IC = 5 A; IB = 1 A; Figure 4 - - 1.5 V ICES collector-emitter cut-off current VCE = VCESM; VBE = 0 V DC current gain hFE Tj = 25 °C [1] - - 1 mA Tj = 125 °C [1] - - 3 mA IC = 10 mA 10 18 35 IC = 1 A 10 20 35 - - 1 µs - - 4 µs ICon = 5 A; IBon = 1 A; VCL = 250 V; Tmb = 100 °C; inductive load; Figure 13 and 14 - 1.9 2.5 µs ICon = 5 A; IBon = IBoff = 1 A; resistive load; Figure 11 and 12 - - 0.8 µs ICon = 5 A; IBon = 1 A; VCL = 300 V; Tmb = 100 °C; inductive load; Figure 13 and 14 - 200 300 ns VCE = 5 V; Figure 8 Dynamic characteristics ton turn-on time ICon = 5 A; IBon = IBoff = 1 A; resistive load; Figure 11 and 12 ts carrier storage time ICon = 5 A; IBon = IBoff = 1 A; resistive load; Figure 11 and 12 tf [1] [2] fall time [2] Measured with a half-sinewave voltage. turn-off storage time © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data Rev. 01 — 16 June 2004 4 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor 003aaa456 2.0 003aaa457 2.0 VBEsat VCEsat (V) (V) 1.5 1.5 1.0 1.0 Tj = 25 ˚C Tj = 100 ˚C Tj = 100 ˚C 0.5 0.5 Tj = 25 ˚C 0 10−1 10 1 IC (A) 0 102 Tj = 25 °C and 100 °C 10−1 10 1 IC (A) 102 Tj = 25 °C and 100 °C Fig 4. Base-emitter saturation voltage as a function of collector current; typical values. 003aaa458 1.4 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values. 003aaa459 10 VCEsat VBE IC = 3 A (V) (V) 6A 8A IC = 8 A 1.2 6A 1 3A 1.0 typ max 0.8 10-1 0 1 2 IB (A) 3 10-1 1 IB (A) 10 Tj = 25 °C Fig 6. Base-emitter voltage as a function of base current; typical values. Fig 7. Collector-emitter saturation voltage as a function base current; typical and maximum values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data Rev. 01 — 16 June 2004 5 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor 003aaa460 102 hFE VCE = 5 V 1V 10 1 10-2 10-1 1 10 IC (A) 102 VCE = 5 V and 1 V Fig 8. DC current gain as a function of collector current; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data Rev. 01 — 16 June 2004 6 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor + 50 V 100 to 200 Ω L 003aaa462 IC (mA) 250 horizontal 200 oscilloscope 100 vertical 6V 1Ω 300 Ω 30 to 60 Hz 003aaa461 Fig 9. Test circuit for collector-emitter sustaining voltage. 0 VCE (V) min VCEOsus Fig 10. Oscilloscope display for collector-emitter sustaining voltage. 003aaa464 tr ≤ 30 ns IBon 90% IB VCC 10% t RL VIM IBoff RB 0 D.U.T. ICon 90% tp T 003aaa463 IC 10% ton tf t ts VCC = 250 V; tp = 20 µs; VIM = −6 V to 8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. Fig 11. Test circuit for resistive load switching times Fig 12. Switching time waveforms with resistive load. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data Rev. 01 — 16 June 2004 7 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor tr IBon 90% IB VCC 10% t LC +IB −IBoff VCL LB ICon 90% D.U.T. −VBE 003aaa465 IC 10% ts toff t tf 003aa466 VCL ≤ 1000 V; VCC = 30 V; VBE = −1 V to −5 V; LB = 1 µH; LC = 200 µH Fig 13. Test circuit for inductive load switching and reverse bias safe operating area. Fig 14. Switching time waveforms with inductive load. 7. Isolation characteristics Table 6: Symbol Isolation characteristics Parameter Visol(RMS)M Peak RMS isolation voltage from all three terminals to external heatsink. Cc-h Capacitance from collector to external heatsink. Conditions Min. Typ. Max. Unit f = 50 to 60 Hz; sinusoidal waveform; RH ≤ 65%; clean and dust-free. - - 2500 V - 12 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data pF Rev. 01 — 16 June 2004 8 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION REFERENCES IEC SOT186A JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-03-12 02-04-09 Fig 15. SOT186A (TO-220F). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data Rev. 01 — 16 June 2004 9 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor 9. Revision history Table 7: Revision history Rev Date 01 20040616 CPCN Description - Product data (9397 750 13442) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Product data Rev. 01 — 16 June 2004 10 of 12 BUT12AX Philips Semiconductors Silicon diffused power transistor 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions 12. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13442 Rev. 01 — 16 June 2004 11 of 12 Philips Semiconductors BUT12AX Silicon diffused power transistor Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Isolation characteristics . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 June 2004 Document order number: 9397 750 13442