BYC58X-600,127

BYC58X-600 8 A hyperfast rectifier diode Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package specifically for use in CCM PFC applications for reduced switching losses. 1.2 Features and benefits „ Allows use of smaller MOSFETs and heatsinks „ Low thermal resistance „ Isolated package „ Reduces switching losses in associated MOSFET „ Low reverse recovery current „ Superfast switching 1.3 Applications „ Continuous Current Mode (CCM) Power Factor Correction (PFC) „ Power supply adapters „ Desk top computer power supplies „ Telecom power supplies „ Server power supplies „ Flat panel TV power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit - - 600 V VRRM repetitive peak reverse voltage IF(AV) average forward current square-wave pulse; δ = 0.5; Th ≤ 93 °C; see Figure 1 and 2 - - 8 A IFSM non-repetitive peak forward current Tj(init) = 25 °C; tp = 10 ms; sine-wave pulse - - 110 A Tj(init) = 25 °C; tp = 8.3 ms; sine-wave pulse - - 120 A with heatsink compound; see Figure 3 - 2.5 3 K/W Rth(j-h) thermal resistance from junction to heatsink BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode Table 1. Quick reference …continued Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 25 °C; see Figure 6 - 12.5 - ns IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 6 and 7 - 21 - ns IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 5 and 6 - 40 - nC IF = 8 A; Tj = 25 °C; see Figure 4 - 2.35 3.2 V IF = 8 A; Tj = 150 °C; see Figure 4 - 2 2.4 V Dynamic characteristics trr Qr reverse recovery time recovered charge Static characteristics VF forward voltage 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode Simplified outline 2 A anode mb n.c. mounting base; isolated mb Graphic symbol K A 001aaa020 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Type number BYC58X-600 BYC58X-600_1 Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" SOD113 All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 2 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V IF(AV) average forward current square-wave pulse; δ = 0.5; Th ≤ 93 °C; see Figure 1 and 2 - 8 A IFRM repetitive peak forward current square-wave pulse; δ = 0.5; tp = 25 µs - 16 A IFSM non-repetitive peak forward current tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C - 110 A tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C - 120 A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C 003aae164 28 Ptot (W) 24 δ=1 66 Th(max) (°C) 78 003aae165 20 a = 180° Ptot (W) 120 16 0.5 90 90 20 0.2 16 60 12 102 30 0.1 12 114 8 126 4 138 8 4 0 0 Fig 1. 4 8 IF(AV) (A) 150 12 Product data sheet 0 2 4 6 8 IF(AV) (A) Forward power dissipation as a function of average forward current; square waveform; maximum values BYC58X-600_1 0 Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 3 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; see Figure 3 - 2.5 3 K/W Rth(j-a) thermal resistance from junction to ambient free air in free air - 55 - K/W 003aac889 10 Zth(j-h) (K/W) 1 10−1 P 10−2 t tp 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance f = 1 MHz; from cathode to external heatsink - 10 - pF BYC58X-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 4 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit - 2.35 3.2 V Static characteristics VF forward voltage IF = 8 A; Tj = 25 °C; see Figure 4 IF = 8 A; Tj = 150 °C; see Figure 4 - 2 2.4 V IR reverse current VR = 600 V; Tj = 25 °C - - 150 µA Dynamic characteristics Qr recovered charge IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 5 and 6 - 40 - nC trr reverse recovery time IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 25 °C; see Figure 6 - 12.5 - ns IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 6 and 7 - 21 - ns IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C - 4 5.5 A peak reverse recovery current IRM 003aae163 20 IF (A) 003aae182 140 Qr (nC) 120 16 100 (1) 12 80 (1) 8 (2) (3) 60 (2) 40 (3) 4 20 0 0 0 Fig 4. 1 2 3 VF (V) 4 Forward current as a function of forward voltage BYC58X-600_1 Product data sheet 0 Fig 5. 100 200 300 400 500 dIF/dt (A/μs) Recovered charge as a function of rate of change of forward current; Tj = 125 °C; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 5 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode IF dlF 003aae181 60 dt trr (ns) trr 40 time (1) (2) 25 % Qr IR (3) 20 100 % IRM 003aac562 0 0 Fig 6. Reverse recovery definitions; ramp recovery BYC58X-600_1 Product data sheet Fig 7. 100 200 300 400 500 dIF/dt (A/μs) Recovered charge as a function of rate of change of forward current; Tj = 125 °C; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 6 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 'full pack' SOD113 A A1 E z P q m T D HE L2 j L1(1) k Q L 1 b1 2 b w c M e 0 10 z(2) 20 mm scale 0.8 DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D E e HE max j k L L 1(1) L2 max m P Q q T w mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 0.7 0.4 15.8 15.2 10.3 9.7 5.08 19.0 2.7 1.7 0.6 0.4 14.4 13.5 3.3 2.8 0.5 6.5 6.3 3.2 3.0 2.6 2.3 2.6 2.55 0.4 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. OUTLINE VERSION SOD113 Fig 8. REFERENCES IEC JEDEC JEITA 2-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-04-09 07-06-18 Package outline SOD113 (TO-220F) BYC58X-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 7 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BYC58X-600_1 20100223 Product data sheet - - BYC58X-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 8 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode 10. Legal information 10.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 10.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BYC58X-600_1 Product data sheet Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 9 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BYC58X-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 23 February 2010 © NXP B.V. 2010. All rights reserved. 10 of 11 BYC58X-600 NXP Semiconductors 8 A hyperfast rectifier diode 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Isolation characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 February 2010 Document identifier: BYC58X-600_1