BYC58X-600

BYC58X-600 8 A hyperfast rectifier diode Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package specifically for use in CCM PFC applications for reduced switching losses. 1.2 Features and benefits Allows use of smaller MOSFETs and heatsinks Isolated package Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET Superfast switching 1.3 Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Desk top computer power supplies Flat panel TV power supplies Power supply adapters Server power supplies Telecom power supplies 1.4 Quick reference data Table 1. VRRM IF(AV) IFSM Quick reference Conditions Min square-wave pulse; δ = 0.5; Th ≤ 93 °C; see Figure 1 and 2 Tj(init) = 25 °C; tp = 10 ms; sine-wave pulse Tj(init) = 25 °C; tp = 8.3 ms; sine-wave pulse Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; see Figure 3 Typ 2.5 Max 600 8 110 120 3 Unit V A A A K/W repetitive peak reverse voltage average forward current non-repetitive peak forward current Symbol Parameter NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode Quick reference …continued Conditions IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 25 °C; see Figure 6 IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 6 and 7 Min Typ 12.5 Max Unit ns Table 1. Symbol Parameter Dynamic characteristics trr reverse recovery time - 21 - ns Qr recovered charge IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 5 and 6 IF = 8 A; Tj = 25 °C; see Figure 4 IF = 8 A; Tj = 150 °C; see Figure 4 - 40 - nC Static characteristics VF forward voltage 2.35 2 3.2 2.4 V V 2. Pinning information Table 2. Pin 1 2 mb K A n.c. Pinning information Symbol Description cathode anode mounting base; isolated mb K A 001aaa020 Simplified outline Graphic symbol 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Package Name BYC58X-600 TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" Version SOD113 Type number BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 2 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 4. Limiting values Table 4. Symbol VRRM VRWM IF(AV) IFRM IFSM Tstg Tj Limiting values Parameter repetitive peak reverse voltage crest working reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature square-wave pulse; δ = 0.5; Th ≤ 93 °C; see Figure 1 and 2 square-wave pulse; δ = 0.5; tp = 25 µs tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C Conditions Min -40 Max 600 600 8 16 110 120 150 150 Unit V V A A A A °C °C In accordance with the Absolute Maximum Rating System (IEC 60134). 28 Ptot (W) 24 0.5 20 16 0.1 12 8 4 0 0 4 8 0.2 003aae164 δ=1 66 Th(max) (°C) 78 90 102 114 126 20 Ptot (W) 16 90 60 12 30 003aae165 a = 180 ° 120 8 4 138 150 12 0 0 2 4 6 IF(AV) (A) 8 IF(AV) (A) Fig 1. Forward power dissipation as a function of average forward current; square waveform; maximum values Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 3 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 5. Thermal characteristics Table 5. Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to heatsink thermal resistance from junction to ambient free air Conditions with heatsink compound; see Figure 3 in free air Min Typ 2.5 55 Max 3 Unit K/W K/W 10 Zth(j-h) (K/W) 1 003aac889 10−1 P 10−2 tp t 10−3 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 6. Symbol Visol(RMS) Isolation characteristics Parameter RMS isolation voltage Conditions 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free f = 1 MHz; from cathode to external heatsink Min Typ Max 2500 Unit V Cisol isolation capacitance - 10 - pF BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 4 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 7. Characteristics Table 7. Symbol VF IR Qr trr Characteristics Parameter forward voltage reverse current recovered charge reverse recovery time Conditions IF = 8 A; Tj = 25 °C; see Figure 4 IF = 8 A; Tj = 150 °C; see Figure 4 VR = 600 V; Tj = 25 °C IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 5 and 6 IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 25 °C; see Figure 6 IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 6 and 7 IRM peak reverse recovery current IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs; Tj = 125 °C Dynamic characteristics 40 12.5 21 4 5.5 nC ns ns A Min Typ 2.35 2 Max 3.2 2.4 150 Unit V V µA Static characteristics 20 IF (A) 16 003aae163 140 Qr (nC) 120 100 (1) 003aae182 12 80 (1) (2) (3) 8 60 (2) 40 4 20 0 0 1 2 3 VF (V) 4 0 0 100 200 300 400 500 dIF/dt (A/μs) (3) Fig 4. Forward current as a function of forward voltage Fig 5. Recovered charge as a function of rate of change of forward current; Tj = 125 °C; typical values BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 5 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode IF dlF dt 60 trr (ns) trr 40 time 25 % Qr 100 % 20 (1) (2) (3) 003aae181 IR IRM 003aac562 0 0 100 200 300 400 500 dIF/dt (A/μs) Fig 6. Reverse recovery definitions; ramp recovery Fig 7. Recovered charge as a function of rate of change of forward current; Tj = 125 °C; typical values BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 6 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 'full pack' SOD113 A E P q m T D HE z A1 L2 L1(1) j k Q L 1 2 b1 b e w M c 0 10 scale 20 mm z(2) 0.8 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 c 0.7 0.4 D 15.8 15.2 E 10.3 9.7 e 5.08 HE max 19.0 j 2.7 1.7 k 0.6 0.4 L 14.4 13.5 L 1(1) 3.3 2.8 L2 max 0.5 m 6.5 6.3 P 3.2 3.0 Q 2.6 2.3 q 2.6 T 2.55 w 0.4 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. OUTLINE VERSION SOD113 REFERENCES IEC JEDEC 2-lead TO-220F JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 07-06-18 Fig 8. Package outline SOD113 (TO-220F) All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. BYC58X-600_1 Product data sheet Rev. 01 — 23 February 2010 7 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 9. Revision history Table 8. Revision history Release date 20100223 Data sheet status Product data sheet Change notice Supersedes Document ID BYC58X-600_1 BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 8 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 10. Legal information 10.1 Data sheet status Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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This document supersedes and replaces all information supplied prior to the publication hereof. BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 9 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Export control — This document as well as the item(s) described herein may be subject to export control regulations. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 10 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Isolation characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 February 2010 Document identifier: BYC58X-600_1