BYQ28ED-200

BYQ28 series E and ED Rectifier diodes ultrafast, rugged Rev. 04 — 5 December 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a SOT428 (DPAK) plastic package. 1.2 Features I Fast switching I Soft recovery characteristic I Reverse surge capability I Low thermal resistance I Low forward voltage drop I High thermal cycling performance 1.3 Applications I Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data I VRRM ≤ 200 V I VF ≤ 0.895 V I IO(AV) ≤ 10 A I trr = 10 ns (typ) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Simplified outline [1] Description anode 1 cathode anode 2 mounting base; cathode Symbol mb 1 2 sym084 mb 3 2 1 3 SOT428 (DPAK) 123 SOT78 (3-lead TO-220AB) [1] It is not possible to connect to pin 2 of the SOT428 package. NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged 3. Ordering information Table 2. Ordering information Package Name BYQ28E-200 BYQ28ED-200 TO-220AB DPAK Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB plastic single-ended surface-mounted package (DPAK); 3-leads (one lead cropped) Version SOT78 SOT428 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VRRM VRWM VR IO(AV) IFRM IFSM Parameter repetitive peak reverse voltage crest working reverse voltage reverse voltage average output current repetitive peak forward current non-repetitive peak forward current square waveform; δ = 1.0 square waveform; δ = 0.5; Tmb ≤ 119 °C; both diodes conducting tp = 25 µs; square waveform; δ = 0.5; Tmb ≤ 119 °C; per diode t = 10 ms; sinusoidal waveform; per diode t = 8.3 ms; sinusoidal waveform; per diode IRM IRSM Tstg Tj VESD peak reverse recovery current non-repetitive peak reverse current storage temperature junction temperature electrostatic discharge voltage all pins; human body model; C = 250 pF; R = 1.5 kΩ tp = 2 µs; δ = 0.001 tp = 100 µs Conditions Min −40 Max 200 200 200 10 10 50 55 0.2 0.2 +150 150 8 Unit V V V A A A A A A °C °C kV Electrostatic discharge BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 5 December 2007 2 of 10 NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged 5. Thermal characteristics Table 4. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions with heatsink compound; per diode; see Figure 1 with heatsink compound; both diodes conducting Rth(j-a) thermal resistance from junction to ambient in free air; SOT78 SOT428 [1] [1] Min - Typ 60 50 Max 4.5 3 - Unit K/W K/W K/W K/W Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 10 Zth(j-mb) (K/W) 1 001aag979 10−1 tp T P δ= 10−2 tp t T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 tp (s) 10 Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 5 December 2007 3 of 10 NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol VF Parameter forward voltage Conditions IF = 5 A; Tj = 150 °C; see Figure 2 IF = 5 A; see Figure 2 IF = 10 A; see Figure 2 IR reverse current VR = 200 V VR = 200 V; Tj = 100 °C Dynamic characteristics Qr trr recovered charge reverse recovery time IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs; see Figure 3 ramp recovery; IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs; see Figure 3 step recovery; when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A IRM VFR peak reverse recovery current forward recovery voltage IF = 5 A to VR ≥ 30 V; dIF/dt = 50 A/µs; see Figure 3 IF = 1 A; dIF/dt = 10 A/µs; see Figure 4 4 15 10 9 25 20 nC ns ns Min Typ 0.8 0.95 1.1 2 0.1 Max 0.895 1.1 1.25 10 0.2 Unit V V V µA mA Static characteristics - 0.5 1 0.7 - A V 15 IF (A) 10 (1) (2) 001aag978 (3) 5 0 0 0.5 1.0 VF (V) 1.5 (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 2. Forward current as a function of forward voltage BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 5 December 2007 4 of 10 NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged IF IF dlF dt trr time time 10 % Qr 100 % VF IR IRM 001aab911 VF VFR time 001aab912 Fig 3. Reverse recovery definitions Fig 4. Forward recovery definitions 8 Ptot (W) 6 0.5 001aag976 6 Ptot (W) 1.9 001aag977 δ=1 a = 1.57 4 2.8 2.2 4 0.1 0.2 4.0 2 2 0 0 2 4 6 IF(AV) (A) 8 0 0 2 4 IF(AV) (A) 6 IF(AV) = IF(RMS) × √δ a = form factor = IF(RMS) / IF(AV) Fig 5. Forward power dissipation as a function of average forward current; square waveform; maximum values Fig 6. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 5 December 2007 5 of 10 NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1 L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1 1.45 1.00 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1 3.30 2.79 L2 max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 05-03-22 05-10-25 Fig 7. Package outline SOT78 (TO-220AB) BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 5 December 2007 6 of 10 NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428 y E b2 A A1 A E1 mounting base D1 HD D2 2 L2 1 3 L L1 b1 e e1 b w M A c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.93 0.46 b 0.89 0.71 b1 1.1 0.9 b2 5.46 5.00 c 0.56 0.20 D1 6.22 5.98 D2 min 4.0 E 6.73 6.47 E1 min 4.45 e 2.285 e1 4.57 HD 10.4 9.6 L 2.95 2.55 L1 min 0.5 L2 0.9 0.5 w 0.2 y max 0.2 OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 JEITA SC-63 EUROPEAN PROJECTION ISSUE DATE 06-02-14 06-03-16 Fig 8. Package outline SOT428 (TO-252) BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 5 December 2007 7 of 10 NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged 8. Revision history Table 6. Revision history Release date 20071205 Data sheet status Product data sheet Change notice Supersedes BYQ28E_SERIES_3 Document ID BYQ28_SER_E_ED_4 Modifications: • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Limiting values table: some parameter descriptions amended to conform to latest standards; IFRM conditions amended; VESD row added. Characteristics: Qrr changed to Qr ‘recovered charge’; trr1 and trr2 changed to trr with ‘ramp recovery’ and ‘step recovery’ added to conditions. Product specification Product specification Product specification BYQ28E_SERIES_2 BYQ28E_SERIES_1; BYQ28EB_SERIES_1 - BYQ28E_SERIES_3 BYQ28E_SERIES_2 BYQ28E_SERIES_1; BYQ28EB_SERIES_1 19981001 19980701 19960801 BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 5 December 2007 8 of 10 NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 5 December 2007 9 of 10 NXP Semiconductors BYQ28 series E and ED Rectifier diodes ultrafast, rugged 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 December 2007 Document identifier: BYQ28_SER_E_ED_4