TO
-22
0A
B
BYT28 series
Dual rectifier diodes ultrafast
Rev. 5 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
Dual, common cathode, ultrafast, epitaxial rectifier diodes in the SOT78 (TO-220AB)
leaded package.
1.2 Features and benefits
Low forward voltage drop
Soft recovery characteristics
Low thermal resistance.
Fast switching
High thermal cycling performance
1.3 Applications
Output rectifiers in high frequency switched-mode power supplies.
1.4 Quick reference data
VR 300 V (BYT28-300)
VR 500 V (BYT28-500)
VF 1.05 V.
IO(AV) 10 A
trr 60 ns
2. Pinning information
Table 1.
Pinning
Pin
Description
1
anode 1
2
cathode
3
anode 2
mb
mounting base; connected to cathode
Simplified outline
Symbol
mb
1
3
2
sym084
1 2 3
SOT78
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
3. Ordering information
Table 2.
Ordering information
Type number
Package
BYT28-300
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
BYT28-500
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse voltage
BYT28-300
-
300
V
BYT28-500
-
500
V
-
300
V
-
500
V
-
10
A
continuous reverse voltage
VR
BYT28-300
Tmb 147 C
BYT28-500
Tmb 147 C
[1]
IO(AV)
average rectified output current
both diodes conducting; square
wave; = 0.5; Tmb 115 C
IFSM
non-repetitive peak forward current
per diode
t = 10 ms
-
50
A
t = 8.3 ms sinusoidal; with reapplied
VRRM(max)
-
55
A
Tstg
storage temperature
40
+150
C
Tj
junction temperature
-
150
C
[1]
Neglecting switching and reverse current losses.
5. Thermal characteristics
Table 4.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
per diode; see Figure 1
-
-
4.5
K/W
both diodes conducting
-
-
3
K/W
Rth(j-a)
thermal resistance from junction to
ambient
in free air
-
60
-
K/W
BYT28_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
2 of 10
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
001aab919
10
Zth(j-mb)
(K/W)
1
10−1
Ptot
10−2
δ=
tp
10−5
10−4
10−3
10−2
10−1
T
t
T
10−3
10−6
tp
1
10
tp (s)
Fig 1.
Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 5.
Characteristics
Tj = 25 C; unless otherwise stated.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 5 A; Tj = 150 C
-
0.95
1.05
V
IF = 10 A
-
1.3
1.4
V
VR = VRRM
-
2
10
A
VR = VRRM; Tj = 100 C
-
10
200
A
Characteristics are per diode
VF
IR
forward voltage
reverse current
QS
reverse recovery charge
IF = 2 A; VR 30 V; dIF/dt = 20 A/s;
see Figure 9
-
50
60
nC
trr
reverse recovery time
IF = 1 A; VR 30 V; dIF/dt = 100 A/s;
see Figure 6
-
50
60
ns
IRRM
repetitive peak reverse current
IF = 5 A; VR 30 V; dIF/dt = 50 A/s;
Tj = 100 C; see Figure 7
-
2
3
A
Vfr
forward recovery voltage
IF = 1 A; dIF/dt = 10 A/s
-
2.5
-
V
BYT28_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
3 of 10
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
IF
dlF
IF
dt
trr
time
time
VF
10 %
100 %
Qr
IR
VFRM
VF
IRM
001aab911
time
001aab912
Fig 2.
Reverse recovery definitions
Fig 3.
001aab913
10
PF
(W)
δ = 1.0
8
105
Tmb(max)
(°C)
114
0.5
001aab914
6
a = 1.57
PF
(W)
1.9
4
132
2.8
123
127.5
0.2
4
136.5
4
132
0.1
I
δ=
tp
tp
2
136.5
141
T
2
141
t
T
Vo = 0.945 V
Rs = 0.021 Ω
145.5
0
0
150
0
2
4
6
8
1
2
3
Per diode.
Per diode.
IF(AV) = IF(RMS) .
a = form factor = IF(RMS) / IF(AV).
Forward power dissipation as a function of
average forward current; maximum values
BYT28_SER
Product data sheet
Fig 5.
145.5
150
0
IF(AV) (A)
Fig 4.
123
Tmb(max)
(°C)
127.5
2.2
118.5
6
Forward recovery definitions
4
5
IF(AV) (A)
Forward power dissipation as a function of
average forward current; maximum values
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
4 of 10
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
001aab915
103
t rr
(ns)
001aab916
10
IRRM
(A)
IF = 5 A
102
IF = 5 A
IF = 5 A
1
IF = 1 A
IF = 1 A
IF = 1 A
10−1
10
Tj = 25 °C
Tj = 100 °C
Tj = 25 °C
Tj = 100 °C
1
10
1
−dIF/dt (A/μs)
102
10−2
1
Per diode.
Fig 6.
−dIF/dt (A/μs)
102
Per diode.
Reverse recovery time as a function of time
differential forward current; maximum values
001aab917
15
Tj = 25 °C
Tj = 150 °C
IF
(A)
10
Fig 7.
Repetitive peak reverse current as a function
of time differential forward current; maximum
values
001aab918
103
QS
(nC)
IF = 5 A
102
10
typ
max
IF = 2 A
10
5
1
0
0
0.5
1
1
1.5
VF (V)
10
−dIF/dt (A/μs)
102
Per diode.
Tj = 25 C.
Fig 8.
Forward current as a function of forward
voltage
Fig 9.
Reverse recovery charge as a function of time
differential forward current; maximum values
7. Package information
Epoxy meets UL94 V0 at 1⁄8 inch.
BYT28_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 10
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
8. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig 10. Package outline SOT78 (SC-46)
BYT28_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
6 of 10
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYT28_SER v.5
20111103
Product data sheet
-
BYT28_SER v.4
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BYT28_SER v.4
20041122
Product data sheet
-
BYT28_SERIES v.3
BYT28_SERIES v.3
19981001
Product specification
-
BYT28_SERIES v.2
BYT28_SERIES v.2
19980901
Product specification
-
BYT28_SERIES v.1
BYT28_SERIES v.1
19960201
Product specification
-
-
BYT28_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
7 of 10
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
BYT28_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
8 of 10
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BYT28_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
9 of 10
BYT28 series
NXP Semiconductors
Dual rectifier diodes ultrafast
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package information . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 November 2011
Document identifier: BYT28_SER