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BZB784-C9V1,115

BZB784-C9V1,115

  • 厂商:

    NXP(恩智浦)

  • 封装:

    SOT-323(SC70)

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
BZB784-C9V1,115 数据手册
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BZB784 series Voltage regulator double diodes Product data sheet Supersedes data of 2000 May 24 2001 Feb 27 NXP Semiconductors Product data sheet Voltage regulator double diodes BZB784 series FEATURES PINNING SOT323 (SC-70) • Total power dissipation: max. 350 mW PIN DESCRIPTION • Approx. 5% VZ tolerance 1 cathode • Working voltage range: nom. 2.4 to 15 V (E24 range). 2 cathode 3 common anode APPLICATIONS • General regulation functions handbook, halfpage • ESD and surge protection. 3 3 DESCRIPTION 1 2 Low-power voltage regulator diodes in a small SOT323 (SC-70) package. 1 2 MAM407 Top view Fig.1 Simplified outline and symbol. MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE BZB784-C2V4 91 BZB784-C3V9 96 BZB784-C6V2 9B BZB784-C10 9G BZB784-C2V7 92 BZB784-C4V3 97 BZB784-C6V8 9C BZB784-C11 9H BZB784-C3V0 93 BZB784-C4V7 98 BZB784-C7V5 9D BZB784-C12 9J BZB784-C3V3 94 BZB784-C5V1 99 BZB784-C8V2 9E BZB784-C13 9K BZB784-C3V6 95 BZB784-C5V6 9A BZB784-C9V1 9F BZB784-C15 9L LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. 200 UNIT IF continuous forward current mA IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tamb = 25 °C; prior to surge see Table 1 Ptot total power dissipation; note 1 Tamb = 25 °C; 2 diodes loaded − 350 mW Tamb = 25 °C; 1 diode loaded − 180 mW tp = 100 μs; square wave; Tamb = 25 °C; prior to surge − 40 W PZSM non-repetitive peak reverse dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 2001 Feb 27 2 NXP Semiconductors Product data sheet Voltage regulator double diodes BZB784 series THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a PARAMETER CONDITIONS thermal resistance from junction to soldering point thermal resistance from junction to ambient VALUE UNIT 2 diodes loaded; note 1 140 K/W 1 diode loaded; note 1 265 K/W 2 diodes loaded; note 2 355 K/W 1 diode loaded; note 2 680 K/W Notes 1. Solder points on cathode tabs. 2. Device mounted on a FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Total BZB784-C series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current 2001 Feb 27 CONDITIONS MAX. UNIT IF = 10 mA; see Fig.2 0.9 V BZB784-C2V4 VR = 1 V 50 μA BZB784-C2V7 VR = 1 V 20 μA BZB784-C3V0 VR = 1 V 10 μA BZB784-C3V3 VR = 1 V 5 μA BZB784-C3V6 VR = 1 V 5 μA BZB784-C3V9 VR = 1 V 3 μA BZB784-C4V3 VR = 1 V 3 μA BZB784-C4V7 VR = 2 V 3 μA BZB784-C5V1 VR = 2 V 2 μA BZB784-C5V6 VR = 2 V 1 μA BZB784-C6V2 VR = 4 V 3 μA BZB784-C6V8 VR = 4 V 2 μA BZB784-C7V5 VR = 5 V 1 μA BZB784-C8V2 VR = 5 V 700 nA BZB784-C9V1 VR = 6 V 500 nA BZB784-C10 VR = 7 V 200 nA BZB784-C11 VR = 8 V 100 nA BZB784-C12 VR = 8 V 100 nA BZB784-C13 VR = 8 V 100 nA BZB784-C15 VR = 10.5V 50 nA 3 Tol. ≈5% DIFFERENTIAL RESISTANCE rdif (Ω) at IZ = 1 mA MIN. MAX. TYP. MAX. 2V4 2.2 2.6 275 600 2V7 2.5 2.9 300 3V0 2.8 3.2 3V3 3.1 3.5 3V6 3.4 3V9 at IZ = 5 mA TYP. TEMP. DIODE CAP. COEFFICIENT Cd (pF) SZ (mV/K) at f = 1 MHz; at IZtest = 5 mA VR = 0 V (see Figs 3 and 4) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 4 TYP. MAX. MAX. 70 100 −1.3 450 6.0 600 75 100 −1.4 450 6.0 325 600 80 95 −1.6 450 6.0 350 600 85 95 −1.8 450 6.0 3.8 375 600 85 90 −1.9 450 6.0 3.7 4.1 400 600 85 90 −1.9 450 6.0 4V3 4.0 4.6 410 600 80 90 −1.7 450 6.0 4V7 4.4 5.0 425 500 50 80 −1.2 300 6.0 5V1 4.8 5.4 400 480 40 60 −0.5 300 6.0 5V6 5.2 6.0 80 400 15 40 1.0 300 6.0 6V2 5.8 6.6 40 150 6 10 2.2 200 6.0 6V8 6.4 7.2 30 80 6 15 3.0 200 6.0 7V5 7.0 7.9 30 80 6 15 3.6 150 4.0 8V2 7.7 8.7 40 80 6 15 4.3 150 4.0 9V1 8.5 9.6 40 100 6 15 5.2 150 3.0 10 9.4 10.6 50 150 8 20 6.0 90 3.0 11 10.4 11.6 50 150 10 20 6.9 90 2.5 12 11.4 12.7 50 150 10 25 7.9 85 2.5 13 12.4 14.1 50 170 10 30 8.8 80 2.5 15 13.8 15.6 50 200 10 30 10.7 75 2.0 Product data sheet BZB784 series MAX. NXP Semiconductors BZB784-C XXX WORKING VOLTAGE VZ (V) at IZ = 5 mA Voltage regulator double diodes 2001 Feb 27 Table 1 Per type BZB784-C2V4 to C15 Tj = 25 °C; unless otherwise specified. NXP Semiconductors Product data sheet Voltage regulator double diodes BZB784 series GRAPHICAL DATA MLD362 300 MLD363 0.5 handbook, halfpage handbook, halfpage SZ (mV/K) IF (mA) 4V7 0 4V3 200 −0.5 2V4 2V7 3V9 −1 100 3V6 −1.5 0 0.6 0.7 0.8 0.9 VF (V) 3V3 3V0 −2 10−1 1 Tj = 25 °C. BZB784-C2V4 to C4V7. Tj = 25 to 150 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MLD364 12 handbook, halfpage 15 SZ (mV/K) 13 12 11 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 8 4 0 −4 10−1 1 10 IZ (mA) 102 BZB784-C5V1 to C15. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. 2001 Feb 27 5 1 10 IZ (mA) 102 Temperature coefficient as a function of working current; typical values. NXP Semiconductors Product data sheet Voltage regulator double diodes BZB784 series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Feb 27 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet Voltage regulator double diodes BZB784 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Feb 27 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Feb 27 Document order number: 9397 750 08112
BZB784-C9V1,115
物料型号:BZB784系列

器件简介:这是Nexperia公司生产的低功耗电压调节二极管,采用小型SOT323 (SC-70)封装。

引脚分配:SOT323 (SC-70)封装的引脚分配如下: - PIN 1: 阴极 - PIN 2: 阴极 - PIN 3: 公共阳极

参数特性: - 总功率耗散:最大350 mW - 工作电压范围:标称2.4至15伏(E24系列) - 正向电压:在10mA电流下,最大0.9伏 - 反向电流:在1伏反向电压下,不同型号的二极管有不同的最大反向电流值

功能详解:这些二极管用于一般调节功能和ESD(静电放电)及浪涌保护。

应用信息:适用于一般调节功能和ESD及浪涌保护。

封装信息:SOT323 (SC-70)塑料表面贴装封装,共有3个引脚。
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