BZB84-B2V4

BZB84 series Dual Zener diodes Rev. 03 — 9 June 2009 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I Non-repetitive peak reverse power dissipation: ≤ 40 W I Total power dissipation: ≤ 300 mW I Two tolerance series: B = ±2 % and C = ±5 % I Wide working voltage range: nominal 2.4 V to 75 V (E24 range) I Small plastic package suitable for surface-mounted design I Dual common anode configuration I AEC-Q101 qualified 1.3 Applications I General regulation functions 1.4 Quick reference data Table 1. Symbol Per diode VF PZSM [1] [2] Quick reference data Parameter forward voltage non-repetitive peak reverse power dissipation Conditions IF = 10 mA [1] [2] Min - Typ - Max 0.9 40 Unit V W Pulse test: tp ≤ 300 µs; δ ≤ 0.02. tp = 100 µs; square wave; Tj = 25 °C prior to surge NXP Semiconductors BZB84 series Dual Zener diodes 2. Pinning information Table 2. Pin 1 2 3 Pinning Description cathode (diode 1) cathode (diode 2) common anode 1 2 3 3 Simplified outline Graphic symbol 1 2 006aaa154 3. Ordering information Table 3. Ordering information Package Name BZB84-B2V4 to BZB84-C75[1] [1] Type number Description plastic surface-mounted package; 3 leads Version SOT23 - The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Marking code[1] V9* VA* VB* VC* VD* VE* VF* VG* VH* VK* VL* VM* VN* VP* VR* Type number BZB84-C2V4 BZB84-C2V7 BZB84-C3V0 BZB84-C3V3 BZB84-C3V6 BZB84-C3V9 BZB84-C4V3 BZB84-C4V7 BZB84-C5V1 BZB84-C5V6 BZB84-C6V2 BZB84-C6V8 BZB84-C7V5 BZB84-C8V2 BZB84-C9V1 Marking code[1] U9* UA* UB* UC* UD* UE* UF* UG* UH* UK* UL* UM* UN* UP* UR* Type number BZB84-B2V4 BZB84-B2V7 BZB84-B3V0 BZB84-B3V3 BZB84-B3V6 BZB84-B3V9 BZB84-B4V3 BZB84-B4V7 BZB84-B5V1 BZB84-B5V6 BZB84-B6V2 BZB84-B6V8 BZB84-B7V5 BZB84-B8V2 BZB84-B9V1 BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 2 of 14 NXP Semiconductors BZB84 series Dual Zener diodes Marking codes …continued Marking code[1] VS* VT* VU* VV* VW* PT* PU* RP* PV* PW* PX* PY* PZ* RA* RB* RC* RD* RE* RF* RG* RH* RJ* Type number BZB84-C10 BZB84-C11 BZB84-C12 BZB84-C13 BZB84-C15 BZB84-C16 BZB84-C18 BZB84-C20 BZB84-C22 BZB84-C24 BZB84-C27 BZB84-C30 BZB84-C33 BZB84-C36 BZB84-C39 BZB84-C43 BZB84-C47 BZB84-C51 BZB84-C56 BZB84-C62 BZB84-C68 BZB84-C75 Marking code[1] US* UT* UU* UV* UW* PB* PC* RQ* PD* PE* PF* PG* PH* PJ* PK* PL* PM* PN* PP* PQ* PR* PS* Table 4. Type number BZB84-B10 BZB84-B11 BZB84-B12 BZB84-B13 BZB84-B15 BZB84-B16 BZB84-B18 BZB84-B20 BZB84-B22 BZB84-B24 BZB84-B27 BZB84-B30 BZB84-B33 BZB84-B36 BZB84-B39 BZB84-B43 BZB84-B47 BZB84-B51 BZB84-B56 BZB84-B62 BZB84-B68 BZB84-B75 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode IF IZSM forward current non-repetitive peak reverse current non-repetitive peak reverse power dissipation [1] Parameter Conditions Min - Max 200 see Table 8, 9, 10 and 11 40 Unit mA PZSM [1] - W BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 3 of 14 NXP Semiconductors BZB84 series Dual Zener diodes Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device Ptot Tj Tamb Tstg [1] [2] Parameter total power dissipation junction temperature ambient temperature storage temperature Conditions Tamb ≤ 25 °C [2] Min −55 −65 Max 300 150 +150 +150 Unit mW °C °C °C tp = 100 µs; square wave; Tj = 25 °C prior to surge Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) [1] [2] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] Min - Typ - Max 417 100 Unit K/W K/W Per device; single diode loaded [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Soldering points at pins 1 and 2. 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Per diode VF [1] Parameter forward voltage Conditions IF = 10 mA [1] Min - Typ - Max 0.9 Unit V Pulse test: tp ≤ 300 µs; δ ≤ 0.02. BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 4 of 14 NXP Semiconductors BZB84 series Dual Zener diodes Table 8. Characteristics per type; BZB84-B2V4 to BZB84-B24 Tj = 25 °C unless otherwise specified. BZB84Bxxx Working voltage VZ (V) Differential resistance rdif (Ω) IZ = 1 mA IZ = 5 mA Max 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.20 12.20 13.30 15.30 16.30 18.40 20.4 22.4 24.5 Max 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 Max 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 Max 50 20 10 5 5 3 3 3 2 1 3 2 1 0.70 0.50 0.20 0.10 0.10 0.10 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14.0 15.4 16.8 Reverse current Temperature coefficient I (µA) R SZ (mV/K) IZ = 5 mA Min −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 Max 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 Diode Non-repetitive capacitance peak reverse current C (pF)[1] d IZSM (A)[2] IZ = 5 mA Min 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 [1] [2] Max 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 Max 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.80 11.80 12.70 14.70 15.70 17.60 19.6 21.6 23.5 f = 1 MHz; VR = 0 V tp = 100 µs; square wave; Tj = 25 °C prior to surge BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 5 of 14 NXP Semiconductors BZB84 series Dual Zener diodes Table 9. Characteristics per type; BZB84-B27 to BZB84-B75 Tj = 25 °C unless otherwise specified. BZB84Bxxx Working voltage VZ (V) Differential resistance rdif (Ω) IZ = 0.5 mA IZ = 2 mA Max 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52.0 57.1 63.2 69.4 76.5 Max 300 300 325 350 350 375 375 400 425 450 475 500 Max 80 80 80 90 130 150 170 180 200 215 240 255 Max 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 18.9 21.0 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 Reverse current Temperature coefficient I (µA) R SZ (mV/K) IZ = 2 mA Min 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 Diode Non-repetitive capacitance peak reverse current C (pF)[1] d IZSM (A)[2] IZ = 2 mA Min 27 30 33 36 39 43 47 51 56 62 68 75 [1] [2] Max 50 50 45 45 45 40 40 40 40 35 35 35 Max 1.00 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.30 0.25 0.20 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50.0 54.9 60.8 66.6 73.5 f = 1 MHz; VR = 0 V tp = 100 µs; square wave; Tj = 25 °C prior to surge BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 6 of 14 NXP Semiconductors BZB84 series Dual Zener diodes Table 10. Characteristics per type; BZB84-C2V4 to BZB84-C24 Tj = 25 °C unless otherwise specified. BZB84Cxxx Working voltage VZ (V) Differential resistance rdif (Ω) IZ = 1 mA IZ = 5 mA Max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 Max 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 Max 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 Max 50 20 10 5 5 3 3 3 2 1 3 2 1 0.70 0.50 0.20 0.10 0.10 0.10 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14.0 15.4 16.8 Reverse current Temperature coefficient I (µA) R SZ (mV/K) IZ = 5 mA Min −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 Max 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 Diode Non-repetitive capacitance peak reverse current C (pF)[1] d IZSM (A)[2] IZ = 5 mA Min 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 [1] [2] Max 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 Max 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 f = 1 MHz; VR = 0 V tp = 100 µs; square wave; Tj = 25 °C prior to surge BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 7 of 14 NXP Semiconductors BZB84 series Dual Zener diodes Table 11. Characteristics per type; BZB84-C27 to BZB84-C75 Tj = 25 °C unless otherwise specified. BZB84Cxxx Working voltage VZ (V) Differential resistance rdif (Ω) IZ = 0.5 mA IZ = 2 mA Max 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 Max 300 300 325 350 350 375 375 400 425 450 475 500 Max 80 80 80 90 130 150 170 180 200 215 240 255 Max 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 18.9 21.0 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 Reverse current Temperature coefficient I (µA) R SZ (mV/K) IZ = 2 mA Min 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 Diode Non-repetitive capacitance peak reverse current C (pF)[1] d IZSM (A)[2] IZ = 2 mA Min 27 30 33 36 39 43 47 51 56 62 68 75 [1] [2] Max 50 50 45 45 45 40 40 40 40 35 35 35 Max 1.00 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.30 0.25 0.20 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 f = 1 MHz; VR = 0 V tp = 100 µs; square wave; Tj = 25 °C prior to surge 103 PZSM (W) mbg801 300 IF (mA) 200 mbg781 102 (1) 10 (2) 100 1 10−1 1 tp (ms) 10 0 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge) (2) Tj = 150 °C (prior to surge) Tj = 25 °C Fig 1. Per diode: Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 2. Per diode: Forward current as a function of forward voltage; typical values BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 8 of 14 NXP Semiconductors BZB84 series Dual Zener diodes 0 SZ (mV/K) mbg783 10 12 SZ (mV/K) mbg782 4V3 11 10 −1 3V9 3V6 5 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 −5 0 20 40 IZ (mA) 60 0 4 8 12 16 IZ (mA) 20 Tj = 25 °C to 150 °C BZB84-B/C2V4 to BZB84-B/C4V3 Tj = 25 °C to 150 °C BZB84-B/C4V7 to BZB84-B/C12 Fig 3. Per diode: Temperature coefficient as a function of working current; typical values 50 006aaa996 Fig 4. Per diode: Temperature coefficient as a function of working current; typical values 30 006aaa997 IZ (mA) 40 VZ(nom) (V) = 2.7 3.3 3.9 4.7 5.6 6.8 8.2 IZ (mA) 25 VZ(nom) (V) = 10 20 12 30 15 15 20 10 10 18 5 22 27 33 36 0 0 2 4 6 8 VZ (V) 10 0 0 10 20 30 VZ (V) 40 Tj = 25 °C BZB84-B/C2V7 to BZB84-B/C8V2 Tj = 25 °C BZB84-B/C10 to BZB84-B/C36 Fig 5. Per diode: Working current as a function of working voltage; typical values Fig 6. Per diode: Working current as a function of working voltage; typical values BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 9 of 14 NXP Semiconductors BZB84 series Dual Zener diodes 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 3 1.1 0.9 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 Dimensions in mm 0.48 0.38 0.15 0.09 04-11-04 Fig 7. Package outline SOT23 (TO-236AB) 10. Packing information Table 12. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BZB84-B2V4 to BZB84-C75[2] [1] [2] Package SOT23 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -215 10000 -235 For further information and the availability of packing methods, see Section 14. The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 10 of 14 NXP Semiconductors BZB84 series Dual Zener diodes 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.6 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr 0.7 (3×) Fig 8. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 9. Wave soldering footprint SOT23 (TO-236AB) BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 11 of 14 NXP Semiconductors BZB84 series Dual Zener diodes 12. Revision history Table 13. Revision history Release date 20090609 Data sheet status Product data sheet Change notice Supersedes BZB84_SER_2 Document ID BZB84_SER_3 Modifications: • • • Table 5 “Limiting values”: Ptot maximum value amended Table 6: Rth maximum values amended Section 13 “Legal information”: updated Product data sheet Product data sheet BZB84_SER_1 - BZB84_SER_2 BZB84_SER_1 20090223 20080514 BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 12 of 14 NXP Semiconductors BZB84 series Dual Zener diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 13 of 14 NXP Semiconductors BZB84 series Dual Zener diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 June 2009 Document identifier: BZB84_SER_3