BZT52H

BZT52H series Single Zener diodes in a SOD123F package Rev. 3 — 7 December 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Total power dissipation: ≤ 830 mW Wide working voltage range: nominal 2.4 V to 75 V (E24 range) Small plastic package suitable for surface-mounted design Low differential resistance AEC-Q101 qualified 1.3 Applications General regulation functions 1.4 Quick reference data Table 1. Symbol VF Ptot Quick reference data Parameter forward voltage total power dissipation Conditions IF = 10 mA Tamb ≤ 25 °C [1] [2] [3] Min - Typ - Max 0.9 375 830 Unit V mW mW [1] [2] [3] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Graphic symbol 1 2 1 2 006aaa152 [1] The marking bar indicates the cathode. NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 3. Ordering information Table 3. Ordering information Package Name BZT52H-B2V4 to BZT52H-C75[1] [1] Type number Description plastic surface-mounted package; 2 leads Version SOD123F - The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Marking code DC DD DE DF DG DH DJ DK DL DM DN DP DQ DR DS DT DU DV DW Type number BZT52H-B15 BZT52H-B16 BZT52H-B18 BZT52H-B20 BZT52H-B22 BZT52H-B24 BZT52H-B27 BZT52H-B30 BZT52H-B33 BZT52H-B36 BZT52H-B39 BZT52H-B43 BZT52H-B47 BZT52H-B51 BZT52H-B56 BZT52H-B62 BZT52H-B68 BZT52H-B75 Marking code DX DY DZ E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF Type number BZT52H-C2V4 BZT52H-C2V7 BZT52H-C3V0 BZT52H-C3V3 BZT52H-C3V6 BZT52H-C3V9 BZT52H-C4V3 BZT52H-C4V7 BZT52H-C5V1 BZT52H-C5V6 BZT52H-C6V2 BZT52H-C6V8 BZT52H-C7V5 BZT52H-C8V2 BZT52H-C9V1 BZT52H-C10 BZT52H-C11 BZT52H-C12 BZT52H-C13 Marking code B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BJ BK BL BM Type number BZT52H-C15 BZT52H-C16 BZT52H-C18 BZT52H-C20 BZT52H-C22 BZT52H-C24 BZT52H-C27 BZT52H-C30 BZT52H-C33 BZT52H-C36 BZT52H-C39 BZT52H-C43 BZT52H-C47 BZT52H-C51 BZT52H-C56 BZT52H-C62 BZT52H-C68 BZT52H-C75 Marking code BN BP BQ BR BS BT BU BV BW BX BY BZ C1 C2 C3 C4 C5 C6 Type number BZT52H-B2V4 BZT52H-B2V7 BZT52H-B3V0 BZT52H-B3V3 BZT52H-B3V6 BZT52H-B3V9 BZT52H-B4V3 BZT52H-B4V7 BZT52H-B5V1 BZT52H-B5V6 BZT52H-B6V2 BZT52H-B6V8 BZT52H-B7V5 BZT52H-B8V2 BZT52H-B9V1 BZT52H-B10 BZT52H-B11 BZT52H-B12 BZT52H-B13 BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 2 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IF IZSM Parameter forward current non-repetitive peak reverse current non-repetitive peak reverse power dissipation total power dissipation junction temperature ambient temperature storage temperature tp = 100 μs; square wave; Tj = 25 °C prior to surge. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [1] Conditions Min - Max 250 see Table 8, 9 and 10 40 375 830 150 +150 +150 Unit mA PZSM Ptot Tj Tamb Tstg [1] [2] [3] −65 −65 W mW mW °C °C °C Tamb ≤ 25 °C [2] [3] 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) [1] [2] [3] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] [2] [3] Min - Typ - Max 330 150 70 Unit K/W K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Soldering point of cathode tab. BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 3 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol VF [1] Parameter forward voltage Conditions IF = 10 mA [1] Min - Typ - Max 0.9 Unit V Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24 Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx Working voltage VZ (V); IZ = 5 mA Min 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 B C B C B C B C B C B C B C B C B C B C B C B C B C B C 2.35 2.2 2.65 2.5 2.94 2.8 3.23 3.1 3.53 3.4 3.82 3.7 4.21 4.0 4.61 4.4 5.0 4.8 5.49 5.2 6.08 5.8 6.66 6.4 7.35 7.0 8.04 7.7 Max 2.45 2.6 2.75 2.9 3.06 3.2 3.37 3.5 3.67 3.8 3.98 4.1 4.39 4.6 4.79 5.0 5.2 5.4 5.71 6.0 6.32 6.6 6.94 7.2 7.65 7.9 8.36 8.7 80 10 0.7 5 3.2 6.2 150 4.0 80 10 1 5 2.5 5.3 150 4.0 80 8 2 4 1.2 4.5 200 6.0 150 10 3 4 0.4 3.7 200 6.0 400 40 1 2 −2.0 2.5 300 6.0 480 60 2 2 −2.7 1.2 300 6.0 500 78 3 2 −3.5 0.2 300 6.0 500 95 3 1 −3.5 0.0 450 6.0 500 95 3 1 −3.5 0.0 450 6.0 500 95 5 1 −3.5 0.0 450 6.0 500 95 5 1 −3.5 0.0 450 6.0 500 95 10 1 −3.5 0.0 450 6.0 500 83 20 1 −3.5 0.0 450 6.0 Maximum differential resistance rdif (Ω) Reverse current IR (μA) Temperature coefficient SZ (mV/K); IZ = 5 mA Min −3.5 Max 0.0 Diode capacitance Cd (pF)[1] Max 450 Non-repetitive peak reverse current IZSM (A)[2] Max 6.0 IZ = 1 mA 400 IZ = 5 mA 85 Max 50 VR (V) 1 BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 4 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24 …continued Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx Working voltage VZ (V); IZ = 5 mA Min 9V1 10 11 12 13 15 16 18 20 22 24 B C B C B C B C B C B C B C B C B C B C B C [1] [2] Maximum differential resistance rdif (Ω) Reverse current IR (μA) Temperature coefficient SZ (mV/K); IZ = 5 mA Min 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 Max 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 Diode capacitance Cd (pF)[1] Max 150 90 85 85 80 75 75 70 60 60 55 Non-repetitive peak reverse current IZSM (A)[2] Max 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 Max 9.28 9.6 10.2 10.6 11.2 11.6 12.2 12.7 13.3 14.1 15.3 15.6 16.3 17.1 18.4 19.1 20.4 21.2 22.4 23.3 24.5 25.6 IZ = 1 mA 100 70 70 90 110 110 170 170 220 220 220 IZ = 5 mA 10 10 10 10 10 15 20 20 20 25 30 Max 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 8.92 8.5 9.8 9.4 10.8 10.4 11.8 11.4 12.7 12.4 14.7 13.8 15.7 15.3 17.6 16.8 19.6 18.8 21.6 20.8 23.5 22.8 f = 1 MHz; VR = 0 V. tp = 100 μs; Tamb = 25 °C. BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 5 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package Table 9. Characteristics per type; BZT52H-B27 to BZT52H-C51 Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx Working voltage VZ (V); IZ = 2 mA Min 27 30 33 36 39 43 47 51 B C B C B C B C B C B C B C B C [1] [2] Maximum differential resistance rdif (Ω) Reverse current IR (μA) Temperature coefficient SZ (mV/K); IZ = 5 mA Min 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 Diode capacitance Cd (pF)[1] Max 50 50 45 45 45 40 40 40 Non-repetitive peak reverse current IZSM (A)[2] Max 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 Max 27.5 28.9 30.6 32.0 33.7 35.0 36.7 38.0 39.8 41.0 43.9 46.0 47.9 50.0 52.0 54.0 IZ = 1 mA 250 250 250 250 300 325 325 350 IZ = 5 mA 40 40 40 60 75 80 90 100 Max 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 26.5 25.1 29.4 28.0 32.3 31.0 35.3 34.0 38.2 37.0 42.1 40.0 46.1 44.0 50.0 48.0 f = 1 MHz; VR = 0 V. tp = 100 μs; Tamb = 25 °C. Table 10. Characteristics per type; BZT52H-B56 to BZT52H-C75 Tj = 25 °C unless otherwise specified. BZT52H Sel -xxx Working voltage VZ (V); IZ = 2 mA Min 56 62 68 75 B C B C B C B C [1] [2] Maximum differential resistance rdif (Ω) Reverse current IR (μA) Temperature coefficient SZ (mV/K); IZ = 5 mA Min 52.2 58.8 65.6 73.4 Max 63.8 71.6 79.8 88.6 Diode capacitance Cd (pF)[1] Max 40 35 35 35 Non-repetitive peak reverse current IZSM (A)[2] Max 0.3 0.3 0.25 0.20 Max 57.1 60.0 63.2 66.0 69.4 72.0 76.5 79.0 IZ = 0.5 mA IZ = 2 mA Max 375 400 400 400 120 140 160 175 0.05 0.05 0.05 0.05 VR (V) 39.2 43.4 47.6 52.5 54.9 52.0 60.8 58.0 66.6 64.0 73.5 70.0 f = 1 MHz; VR = 0 V. tp = 100 μs; Tamb = 25 °C. BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 6 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 103 PZSM (W) mbg801 300 IF (mA) 200 mbg781 102 (1) 10 (2) 100 1 10−1 1 tp (ms) 10 0 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge) (2) Tj = 150 °C (prior to surge) Tj = 25 °C Fig 1. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values mbg783 Fig 2. Forward current as a function of forward voltage; typical values 0 SZ (mV/K) 10 12 SZ (mV/K) mbg782 4V3 11 10 −1 3V9 3V6 5 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 0 20 40 IZ (mA) 60 −5 0 4 8 12 16 IZ (mA) 20 BZT52H-B/C2V4 to BZT52H-B/C4V3 Tj = 25 °C to 150 °C BZT52H-B/C4V7 to BZT52H-B/C12 Tj = 25 °C to 150 °C Fig 3. Temperature coefficient as a function of working current; typical values Fig 4. Temperature coefficient as a function of working current; typical values BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 7 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 1.7 1.5 1 0.55 0.35 3.6 3.4 2.7 2.5 1.2 1.0 2 0.70 0.55 Dimensions in mm 0.25 0.10 04-11-29 Fig 5. Package outline SOD123F 10. Packing information Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 BZT52H-B2V4 to SOD123F BZT52H-C75 [1] 10000 -135 -115 For further information and the availability of packing methods, see Section 14. BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 8 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 11. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm. Fig 6. Reflow soldering footprint SOD123F BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 9 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 12. Revision history Table 12. Revision history Release date 20101207 Data sheet status Product data sheet Change notice Supersedes BZT52H_SER v.2 Document ID BZT52H_SER v.3 Modifications: • • • • • Added selection B. Section 1.2 “Features and benefits”: amended. Table 2 “Pinning”: graphic symbol updated. Section 8 “Test information”: added. Section 13 “Legal information”: updated. Product data sheet Product data sheet BZT52H_SER v.1 - BZT52H_SER v.2 BZT52H_SER v.1 20091115 20051222 BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 10 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. © NXP B.V. 2010. All rights reserved. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BZT52H_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 3 — 7 December 2010 11 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 12 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 December 2010 Document identifier: BZT52H_SER