BZV49-C3V3,115

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Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BZV49 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 11 2005 Feb 03 NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series FEATURES PINNING • Total power dissipation: max. 1 W PIN DESCRIPTION • Tolerance series: approx. ±5% 1 anode • Working voltage range: nom. 2.4 to 75 V (E24 range) 2 cathode • Non-repetitive peak reverse power dissipation: max. 40 W. 3 anode APPLICATIONS • General regulation functions. 1 3 DESCRIPTION Medium-power voltage regulator diodes in a SOT89 plastic SMD package. 3 The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). 2 2 1 sym096 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER BZV49-C2V4 to BZV49-C75 note 1 NAME DESCRIPTION VERSION SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 Note 1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range). MARKING TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER MARKING CODE BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y BZV49-C3V0 3Y0 BZV49-C3Y3 3Y3 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y − − BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y − − BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y − − 2005 Feb 03 TYPE NUMBER MARKING CODE 2 TYPE NUMBER NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tj = 25 °C prior to surge see Table “Per type” Ptot total power dissipation Tamb = 25 °C; note 1 PZSM non-repetitive peak reverse power dissipation tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.2 Tstg Tj MAX. UNIT 250 mA − 1 W − 40 W storage temperature −65 +150 °C junction temperature − 150 °C Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series Tamb = 25 °C unless otherwise specified. SYMBOL VF 2005 Feb 03 PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.3 3 MAX. UNIT 1 V DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (μA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 4 450 50 1.0 6.0 5 450 20 1.0 6.0 0 5 450 10 1.0 6.0 0 5 450 5 1.0 6.0 −2.4 0 5 450 5 1.0 6.0 −3.5 −2.5 0 5 450 3 1.0 6.0 90 −3.5 −2.5 0 5 450 3 1.0 6.0 80 −3.5 −1.4 +0.2 5 300 3 2.0 6.0 40 60 −2.7 −0.8 +1.2 5 300 2 2.0 6.0 6.0 15 40 −2.0 +1.2 +2.5 5 300 1 2.0 6.0 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0 6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0 7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0 8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0 9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0 10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0 11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5 12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5 13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5 15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0 16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5 18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5 20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5 22 20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25 24 22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25 TYP. MAX. MIN. TYP. MAX. MAX. 2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 2V7 2.5 2.9 75 100 −3.5 −2.0 0 3V0 2.8 3.2 80 95 −3.5 −2.1 3V3 3.1 3.5 85 95 −3.5 −2.4 3V6 3.4 3.8 85 90 −3.5 3V9 3.7 4.1 85 90 4V3 4.0 4.6 80 4V7 4.4 5.0 50 5V1 4.8 5.4 5V6 5.2 6V2 5.8 6V8 MAX. Product data sheet VR (V) MAX. BZV49 series MAX. MIN. NXP Semiconductors BZV49CXXX WORKING VOLTAGE VZ (V) at IZtest Voltage regulator diodes 2005 Feb 03 Per type Tj = 25 °C unless otherwise specified. TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (μA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 5 MAX. MAX. VR (V) 2 50 0.05 18.9 1.0 29.4 2 50 0.05 21.0 1.0 33.4 2 45 0.05 23.1 0.9 33.0 37.4 2 45 0.05 25.2 0.8 33.4 36.4 41.2 2 45 0.05 27.3 0.7 37.6 41.2 46.6 2 40 0.05 30.1 0.6 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2 MIN. MAX. TYP. MAX. MIN. TYP. MAX. 27 25.1 28.9 25 80 21.4 23.4 25.3 30 28.0 32.0 30 80 24.4 26.6 33 31.0 35.0 35 80 27.4 29.7 36 34.0 38.0 35 90 30.4 39 37.0 41.0 40 130 43 40.0 46.0 45 150 47 44.0 50.0 50 51 48.0 54.0 56 52.0 60.0 62 58.0 68 75 MAX. NXP Semiconductors DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest Voltage regulator diodes 2005 Feb 03 BZV49CXXX WORKING VOLTAGE VZ (V) at IZtest Product data sheet BZV49 series NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-tp) thermal resistance from junction to tie-point Rth(j-a) thermal resistance from junction to ambient note 1 VALUE UNIT 15 K/W 125 K/W Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. GRAPHICAL DATA MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 2005 Feb 03 6 0.8 VF (V) 1 Forward current as a function of forward voltage; typical values. NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series MBG927 1 handbook, full pagewidth 4V3 SZ (mV/K) 3V9 3V6 0 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 IZ (A) BZV49-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 10 handbook, halfpage SZ (mV/K) 10 9V1 5 8V2 7V5 6V8 6V2 5V6 5V1 0 4V7 −5 0 4 8 12 16 IZ (mA) 20 BZV49-C4V7 to C10. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. 2005 Feb 03 7 1 NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2005 Feb 03 REFERENCES IEC JEDEC JEITA TO-243 SC-62 8 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2005 Feb 03 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp10 Date of release: 2005 Feb 03 Document order number: 9397 750 13926