BZV49-C47,115

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BZV49 series Voltage regulator diodes Product specification Supersedes data of 1999 May 11 2005 Feb 03 Philips Semiconductors Product specification Voltage regulator diodes BZV49 series FEATURES PINNING • Total power dissipation: max. 1 W PIN DESCRIPTION • Tolerance series: approx. ±5% 1 anode • Working voltage range: nom. 2.4 to 75 V (E24 range) 2 cathode • Non-repetitive peak reverse power dissipation: max. 40 W. 3 anode APPLICATIONS • General regulation functions. 1 3 DESCRIPTION Medium-power voltage regulator diodes in a SOT89 plastic SMD package. 2 3 The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). 2 sym096 1 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER BZV49-C2V4 to BZV49-C75 note 1 NAME DESCRIPTION VERSION SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 Note 1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range). MARKING TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER MARKING CODE BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y BZV49-C3V0 3Y0 BZV49-C3Y3 3Y3 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24Y BZV49-C62 62Y BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y − − BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y − − BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y − − 2005 Feb 03 TYPE NUMBER MARKING CODE 2 TYPE NUMBER Philips Semiconductors Product specification Voltage regulator diodes BZV49 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. 250 UNIT IF continuous forward current mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge Ptot total power dissipation Tamb = 25 °C; note 1 − 1 W PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.2 − 40 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C see Table “Per type” Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series Tamb = 25 °C unless otherwise specified. SYMBOL VF 2005 Feb 03 PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.3 3 MAX. UNIT 1 V DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C 4 450 50 1.0 6.0 5 450 20 1.0 6.0 0 5 450 10 1.0 6.0 −2.4 0 5 450 5 1.0 6.0 −2.4 0 5 450 5 1.0 6.0 −3.5 −2.5 0 5 450 3 1.0 6.0 90 −3.5 −2.5 0 5 450 3 1.0 6.0 80 −3.5 −1.4 +0.2 5 300 3 2.0 6.0 40 60 −2.7 −0.8 +1.2 5 300 2 2.0 6.0 6.0 15 40 −2.0 +1.2 +2.5 5 300 1 2.0 6.0 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0 6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0 7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0 8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0 9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0 10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0 11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5 12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5 13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5 15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0 16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5 18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5 20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5 22 20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25 24 22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25 TYP. MAX. MIN. TYP. MAX. MAX. 2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 2V7 2.5 2.9 75 100 −3.5 −2.0 0 3V0 2.8 3.2 80 95 −3.5 −2.1 3V3 3.1 3.5 85 95 −3.5 3V6 3.4 3.8 85 90 −3.5 3V9 3.7 4.1 85 90 4V3 4.0 4.6 80 4V7 4.4 5.0 50 5V1 4.8 5.4 5V6 5.2 6V2 5.8 6V8 MAX. Product specification VR (V) MAX. BZV49 series MAX. MIN. Philips Semiconductors BZV49CXXX WORKING VOLTAGE VZ (V) at IZtest Voltage regulator diodes 2005 Feb 03 Per type Tj = 25 °C unless otherwise specified. TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. MAX. VR (V) 2 50 0.05 18.9 1.0 29.4 2 50 0.05 21.0 1.0 33.4 2 45 0.05 23.1 0.9 37.4 2 45 0.05 25.2 0.8 5 MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. 27 25.1 28.9 25 80 21.4 23.4 25.3 30 28.0 32.0 30 80 24.4 26.6 33 31.0 35.0 35 80 27.4 29.7 36 34.0 38.0 35 90 30.4 33.0 39 37.0 41.0 40 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7 43 40.0 46.0 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6 47 44.0 50.0 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5 51 48.0 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4 56 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3 62 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3 68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25 75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2 Philips Semiconductors DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest Voltage regulator diodes 2005 Feb 03 BZV49CXXX WORKING VOLTAGE VZ (V) at IZtest Product specification BZV49 series Philips Semiconductors Product specification Voltage regulator diodes BZV49 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-tp) thermal resistance from junction to tie-point Rth(j-a) thermal resistance from junction to ambient note 1 VALUE UNIT 15 K/W 125 K/W Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. GRAPHICAL DATA MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 2005 Feb 03 6 0.8 VF (V) 1 Forward current as a function of forward voltage; typical values. Philips Semiconductors Product specification Voltage regulator diodes BZV49 series MBG927 1 handbook, full pagewidth 4V3 SZ (mV/K) 3V9 3V6 0 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 IZ (A) BZV49-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 10 handbook, halfpage SZ (mV/K) 10 9V1 5 8V2 7V5 6V8 6V2 5V6 5V1 0 4V7 −5 0 4 8 12 16 IZ (mA) 20 BZV49-C4V7 to C10. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. 2005 Feb 03 7 1 Philips Semiconductors Product specification Voltage regulator diodes BZV49 series PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2005 Feb 03 REFERENCES IEC JEDEC JEITA TO-243 SC-62 8 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 Philips Semiconductors Product specification Voltage regulator diodes BZV49 series DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2005 Feb 03 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA76 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp10 Date of release: 2005 Feb 03 Document order number: 9397 750 13926