BZV55-B30

BZV55 series Voltage regulator diodes Rev. 04 — 19 July 2007 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 1.2 Features I Non-repetitive peak reverse power dissipation: ≤ 40 W I Total power dissipation: ≤ 500 mW I Two tolerance series: ±2 % and ±5 % I Wide working voltage range: nominal 2.4 V to 75 V (E24 range) I Low differential resistance I Small hermetically sealed glass SMD package 1.3 Applications I General regulation functions 1.4 Quick reference data Table 1. Symbol VF PZSM [1] Quick reference data Parameter forward voltage non-repetitive peak reverse power dissipation Conditions IF = 10 mA [1] Min - Typ - Max 0.9 40 Unit V W tp = 100 µs; square wave; Tj = 25 °C prior to surge 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Symbol k a 1 2 006aaa152 [1] The marking band indicates the cathode. NXP Semiconductors BZV55 series Voltage regulator diodes 3. Ordering information Table 3. Ordering information Package Name BZV55-B2V4 to BZV55-C75[1] [1] Type number Description hermetically sealed glass surface-mounted package; 2 connectors Version SOD80C - The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Marking code[1] marking band Type number BZV55-B2V4 to BZV55-C75 [1] blue: made in China yellow: made in Philippines 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IF IZSM Parameter forward current non-repetitive peak reverse current non-repetitive peak reverse power dissipation total power dissipation storage temperature junction temperature tp = 100 µs; square wave; Tj = 25 °C prior to surge Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. [1] Conditions Min - Max 250 see Table 8 and 9 40 400 500 +200 +200 Unit mA PZSM Ptot Tstg Tj [1] [2] [1] −65 −65 W mW mW °C °C Tamb ≤ 50 °C Ttp ≤ 50 °C [2] [2] 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-t) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to tie-point Conditions in free air [1] Min - Typ - Max 380 300 Unit K/W K/W Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. BZV55_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 2 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 ≤ 0.001 006aab072 1 10−1 1 10 102 103 104 tp (ms) 105 Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol VF IR Parameter forward voltage reverse current BZV55-B/C2V4 BZV55-B/C2V7 BZV55-B/C3V0 BZV55-B/C3V3 BZV55-B/C3V6 BZV55-B/C3V9 BZV55-B/C4V3 BZV55-B/C4V7 BZV55-B/C5V1 BZV55-B/C5V6 BZV55-B/C6V2 BZV55-B/C6V8 BZV55-B/C7V5 BZV55-B/C8V2 BZV55-B/C9V1 BZV55-B/C10 BZV55-B/C11 BZV55-B/C12 BZV55-B/C13 BZV55-B/C15 to BZV55-B/C75 BZV55_SER_4 Conditions IF = 10 mA VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZ(nom) Min - Typ - Max 0.9 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 Unit V µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 3 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 Tj = 25 °C unless otherwise specified. BZV55-x Sel xx Working voltage VZ (V) IZ = 5 mA Min 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 B C B C B C B C B C B C B C B C B C B C B C B C B C B C B C B C B C B C BZV55_SER_4 Differential resistance rdif (Ω) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ = 1 mA Typ 275 300 325 350 375 400 410 425 400 80 40 30 30 40 40 50 50 50 Max 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 IZ = 5 mA Typ 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 Max 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 IZ = 5 mA Min −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 Typ −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 Max 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 Max 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 Max 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 Max 2.45 2.6 2.75 2.9 3.06 3.2 3.37 3.5 3.67 3.8 3.98 4.1 4.39 4.6 4.79 5.0 5.2 5.4 5.71 6.0 6.32 6.6 6.94 7.2 7.65 7.9 8.36 8.7 9.28 9.6 10.2 10.6 11.2 11.6 12.2 12.7 2.35 2.2 2.65 2.5 2.94 2.8 3.23 3.1 3.53 3.4 3.82 3.7 4.21 4.0 4.61 4.4 5.0 4.8 5.49 5.2 6.08 5.8 6.66 6.4 7.35 7.0 8.04 7.7 8.92 8.5 9.8 9.4 10.8 10.4 11.8 11.4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 4 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 …continued Tj = 25 °C unless otherwise specified. BZV55-x Sel xx Working voltage VZ (V) IZ = 5 mA Min 13 15 16 18 20 22 24 B C B C B C B C B C B C B C [1] [2] Differential resistance rdif (Ω) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ = 1 mA Typ 50 50 50 50 60 60 60 Max 170 200 200 225 225 250 250 IZ = 5 mA Typ 10 10 10 10 15 20 25 Max 30 30 40 45 55 55 70 IZ = 5 mA Min 7.0 9.2 10.4 12.4 12.3 14.1 15.9 Typ 9.4 11.4 12.4 14.4 15.6 17.6 19.6 Max 11.0 13.0 14.0 16.0 18.0 20.0 22.0 Max 80 75 75 70 60 60 55 Max 2.5 2.0 1.5 1.5 1.5 1.25 1.25 Max 13.3 14.1 15.3 15.6 16.3 17.1 18.4 19.1 20.4 21.2 22.4 23.3 24.5 25.6 12.7 12.4 14.7 13.8 15.7 15.3 17.6 16.8 19.6 18.8 21.6 20.8 23.5 22.8 f = 1 MHz; VR = 0 V tp = 100 µs; square wave; Tj = 25 °C prior to surge BZV55_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 5 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes Table 9. Characteristics per type; BZV55-B27 to BZV55-C75 Tj = 25 °C unless otherwise specified. BZV55-x Sel xx Working voltage VZ (V) IZ = 2 mA Min 27 30 33 36 39 43 47 51 56 62 68 75 B C B C B C B C B C B C B C B C B C B C B C B C [1] [2] Differential resistance rdif (Ω) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ = 0.5 mA Typ 65 70 75 80 80 85 85 90 100 120 150 170 Max 300 300 325 350 350 375 375 400 425 450 475 500 IZ = 2 mA Typ 25 30 35 35 40 45 50 60 70 80 90 95 Max 80 80 80 90 130 150 170 180 200 215 240 255 IZ = 2 mA Min 18.0 20.6 23.3 26.0 28.7 31.4 35.0 38.6 42.2 58.8 65.6 73.4 Typ 22.7 25.7 28.7 31.8 34.8 38.8 42.9 46.9 52.0 64.4 71.7 80.2 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 Max 50 50 45 45 45 40 40 40 40 35 35 35 Max 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 Max 27.5 28.9 30.6 32.0 33.7 35.0 36.7 38.0 39.8 41.0 43.9 46.0 47.9 50.0 52.0 54.0 57.1 60.0 63.2 66.0 69.4 72.0 76.5 79.0 26.5 25.1 29.4 28.0 32.3 31.0 35.3 34.0 38.2 37.0 42.1 40.0 46.1 44.0 50.0 48.0 54.9 52.0 60.8 58.0 66.6 64.0 73.5 70.0 f = 1 MHz; VR = 0 V tp = 100 µs; square wave; Tj = 25 °C prior to surge BZV55_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 6 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes 103 PZSM (W) mbg801 300 IF (mA) 200 mbg781 102 (1) 10 (2) 100 1 10−1 1 tp (ms) 10 0 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge) (2) Tj = 150 °C (prior to surge) Tj = 25 °C Fig 2. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values mbg783 Fig 3. Forward current as a function of forward voltage; typical values 0 SZ (mV/K) 10 12 SZ (mV/K) mbg782 4V3 11 10 −1 3V9 3V6 5 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 −5 0 20 40 IZ (mA) 60 0 4 8 12 16 IZ (mA) 20 BZV55-B/C2V4 to BZV55-B/C4V3 Tj = 25 °C to 150 °C BZV55-B/C4V7 to BZV55-B/C12 Tj = 25 °C to 150 °C Fig 4. Temperature coefficient as a function of working current; typical values Fig 5. Temperature coefficient as a function of working current; typical values BZV55_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 7 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes 8. Package outline Hermetically sealed glass surface-mounted package; 2 connectors SOD80C k (1) a D L H L DIMENSIONS (mm are the original dimensions) 0 UNIT mm D 1.60 1.45 H 3.7 3.3 L 0.3 1 scale 2 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD80C REFERENCES IEC 100H01 JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-01-26 06-03-16 Fig 6. Package outline SOD80C 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BZV55-B2V4 to BZV55-C75 [1] Package SOD80C Description 4 mm pitch, 8 mm tape and reel Packing quantity 2500 -115 10000 -135 For further information and the availability of packing methods, see Section 13. BZV55_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 8 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes 10. Soldering 4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x) sod080c Fig 7. Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist 2.90 1.70 occupied area tracks Dimensions in mm sod080c Fig 8. Wave soldering footprint SOD80C BZV55_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 9 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes 11. Revision history Table 11. Revision history Release date 20070719 Data sheet status Product data sheet Change notice CPCN200508022F Supersedes BZV55_3 Document ID BZV55_SER_4 Modifications: • • • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 4 “Marking”: enhanced as per CPCN200508022F Table 5: IF continuous forward current redefined to forward current Table 6: Rth(j-tp) thermal resistance from junction to tie-point redefined to Rth(j-t) Figure 1: amended Section 9 “Packing information”: added Section 12 “Legal information”: updated Product specification Product specification Product specification BZV55_2 BZV55_1 - BZV55_3 BZV55_2 BZV55_1 20020228 19990521 19960426 BZV55_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 10 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BZV55_SER_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 19 July 2007 11 of 12 NXP Semiconductors BZV55 series Voltage regulator diodes 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 July 2007 Document identifier: BZV55_SER_4