BZV55-BC3V9

BZV55 series Voltage regulator diodes Rev. 5 — 26 January 2011 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 1.2 Features and benefits  Non-repetitive peak reverse power dissipation:  40 W  Total power dissipation:  500 mW  Two tolerance series: 2 % and 5 %  Wide working voltage range: nominal 2.4 V to 75 V (E24 range)  Low differential resistance  Small hermetically sealed glass SMD package 1.3 Applications  General regulation functions 1.4 Quick reference data Table 1. Symbol VF PZSM [1] Quick reference data Parameter forward voltage non-repetitive peak reverse power dissipation Conditions IF = 10 mA [1] Min - Typ - Max 0.9 40 Unit V W tp = 100 s; square wave; Tj = 25 C prior to surge 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Graphic symbol k a 1 2 006aaa152 [1] The marking band indicates the cathode. NXP Semiconductors BZV55 series Voltage regulator diodes 3. Ordering information Table 3. Ordering information Package Name BZV55-B2V4 to BZV55-C75[1] [1] Type number Description hermetically sealed glass surface-mounted package; 2 connectors Version SOD80C - The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Marking code marking band Type number BZV55-B2V4 to BZV55-C75 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IF IZSM Parameter forward current non-repetitive peak reverse current non-repetitive peak reverse power dissipation total power dissipation storage temperature junction temperature tp = 100 s; square wave; Tj = 25 C prior to surge Device mounted on a ceramic substrate of 10  10  0.6 mm. [1] Conditions Min - Max 250 see Table 8 and 9 40 400 500 +200 +200 Unit mA PZSM Ptot Tstg Tj [1] [2] [1] 65 65 W mW mW C C Tamb  50 C Ttp  50 C [2] [2] 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) [1] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] Min - Typ - Max 380 300 Unit K/W K/W Device mounted on a ceramic substrate of 10  10  0.6 mm. BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 2 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 ≤ 0.001 006aab072 1 10−1 1 10 102 103 104 tp (ms) 105 Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol VF IR Parameter forward voltage reverse current BZV55-B/C2V4 BZV55-B/C2V7 BZV55-B/C3V0 BZV55-B/C3V3 BZV55-B/C3V6 BZV55-B/C3V9 BZV55-B/C4V3 BZV55-B/C4V7 BZV55-B/C5V1 BZV55-B/C5V6 BZV55-B/C6V2 BZV55-B/C6V8 BZV55-B/C7V5 BZV55-B/C8V2 BZV55-B/C9V1 BZV55-B/C10 BZV55-B/C11 BZV55-B/C12 BZV55-B/C13 BZV55-B/C15 to BZV55-B/C75 BZV55_SER Conditions IF = 10 mA VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZ(nom) Min - Typ - Max 0.9 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 Unit V A A A A A A A A A A A A A nA nA nA nA nA nA nA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 3 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 Tj = 25 C unless otherwise specified. BZV55xxx Sel Working voltage VZ (V) IZ = 5 mA Min 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 B C B C B C B C B C B C B C B C B C B C B C B C B C B C B C B C B C B C 2.35 2.2 2.65 2.5 2.94 2.8 3.23 3.1 3.53 3.4 3.82 3.7 4.21 4.0 4.61 4.4 5.0 4.8 5.49 5.2 6.08 5.8 6.66 6.4 7.35 7.0 8.04 7.7 8.92 8.5 9.8 9.4 10.8 10.4 11.8 11.4 Max 2.45 2.6 2.75 2.9 3.06 3.2 3.37 3.5 3.67 3.8 3.98 4.1 4.39 4.6 4.79 5.0 5.2 5.4 5.71 6.0 6.32 6.6 6.94 7.2 7.65 7.9 8.36 8.7 9.28 9.6 10.2 10.6 11.2 11.6 12.2 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 50 150 10 20 5.4 7.4 9.0 85 2.5 50 150 8 20 4.5 6.4 8.0 90 3.0 40 100 6 15 3.8 5.5 7.0 150 3.0 40 80 6 15 3.2 4.6 6.2 150 4.0 30 80 6 15 2.5 4.0 5.3 150 4.0 30 80 6 15 1.2 3.0 4.5 200 6.0 40 150 6 10 0.4 2.3 3.7 200 6.0 80 400 15 40 2.0 1.2 2.5 300 6.0 400 480 40 60 2.7 0.8 1.2 300 6.0 425 500 50 80 3.5 1.4 0.2 300 6.0 410 600 80 90 3.5 2.5 0 450 6.0 400 600 85 90 3.5 2.5 0 450 6.0 375 600 85 90 3.5 2.4 0 450 6.0 350 600 85 95 3.5 2.4 0 450 6.0 325 600 80 95 3.5 2.1 0 450 6.0 300 600 75 100 3.5 2.0 0 450 6.0 Differential resistance rdif () IZ = 1 mA Typ 275 Max 600 IZ = 5 mA Typ 70 Max 100 Temperature coefficient SZ (mV/K) IZ = 5 mA Min 3.5 Typ 1.6 Max 0 Max 450 Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] Max 6.0 BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 4 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24 …continued Tj = 25 C unless otherwise specified. BZV55xxx Sel Working voltage VZ (V) IZ = 5 mA Min 13 15 16 18 20 22 24 B C B C B C B C B C B C B C [1] [2] Differential resistance rdif () IZ = 1 mA Typ 50 50 50 50 60 60 60 Max 170 200 200 225 225 250 250 IZ = 5 mA Typ 10 10 10 10 15 20 25 Max 30 30 40 45 55 55 70 Temperature coefficient SZ (mV/K) IZ = 5 mA Min 7.0 9.2 10.4 12.4 12.3 14.1 15.9 Typ 9.4 11.4 12.4 14.4 15.6 17.6 19.6 Max 11.0 13.0 14.0 16.0 18.0 20.0 22.0 Diode capacitance Cd (pF)[1] Max 80 75 75 70 60 60 55 Non-repetitive peak reverse current IZSM (A)[2] Max 2.5 2.0 1.5 1.5 1.5 1.25 1.25 Max 13.3 14.1 15.3 15.6 16.3 17.1 18.4 19.1 20.4 21.2 22.4 23.3 24.5 25.6 12.7 12.4 14.7 13.8 15.7 15.3 17.6 16.8 19.6 18.8 21.6 20.8 23.5 22.8 f = 1 MHz; VR = 0 V tp = 100 s; square wave; Tj = 25 C prior to surge BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 5 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes Table 9. Characteristics per type; BZV55-B27 to BZV55-C75 Tj = 25 C unless otherwise specified. BZV55xxx Sel Working voltage VZ (V) IZ = 2 mA Min 27 30 33 36 39 43 47 51 56 62 68 75 B C B C B C B C B C B C B C B C B C B C B C B C [1] [2] Differential resistance rdif () IZ = 0.5 mA Typ 65 70 75 80 80 85 85 90 100 120 150 170 Max 300 300 325 350 350 375 375 400 425 450 475 500 IZ = 2 mA Typ 25 30 35 35 40 45 50 60 70 80 90 95 Max 80 80 80 90 130 150 170 180 200 215 240 255 Temperature coefficient SZ (mV/K) IZ = 2 mA Min 18.0 20.6 23.3 26.0 28.7 31.4 35.0 38.6 42.2 58.8 65.6 73.4 Typ 22.7 25.7 28.7 31.8 34.8 38.8 42.9 46.9 52.0 64.4 71.7 80.2 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 Diode capacitance Cd (pF)[1] Max 50 50 45 45 45 40 40 40 40 35 35 35 Non-repetitive peak reverse current IZSM (A)[2] Max 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 Max 27.5 28.9 30.6 32.0 33.7 35.0 36.7 38.0 39.8 41.0 43.9 46.0 47.9 50.0 52.0 54.0 57.1 60.0 63.2 66.0 69.4 72.0 76.5 79.0 26.5 25.1 29.4 28.0 32.3 31.0 35.3 34.0 38.2 37.0 42.1 40.0 46.1 44.0 50.0 48.0 54.9 52.0 60.8 58.0 66.6 64.0 73.5 70.0 f = 1 MHz; VR = 0 V tp = 100 s; square wave; Tj = 25 C prior to surge BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 6 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes 103 PZSM (W) mbg801 300 IF (mA) 200 mbg781 102 (1) 10 (2) 100 1 10−1 1 tp (ms) 10 0 0.6 0.8 VF (V) 1 (1) Tj = 25 C (prior to surge) (2) Tj = 150 C (prior to surge) Tj = 25 C Fig 2. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values mbg783 Fig 3. Forward current as a function of forward voltage; typical values 0 SZ (mV/K) 10 12 SZ (mV/K) mbg782 4V3 11 10 −1 3V9 3V6 5 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 0 20 40 IZ (mA) 60 −5 0 4 8 12 16 IZ (mA) 20 BZV55-B/C2V4 to BZV55-B/C4V3 Tj = 25 C to 150 C BZV55-B/C4V7 to BZV55-B/C12 Tj = 25 C to 150 C Fig 4. Temperature coefficient as a function of working current; typical values Fig 5. Temperature coefficient as a function of working current; typical values BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 7 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes 8. Package outline 0.3 3.7 3.3 0.3 1.60 1.45 Dimensions in mm 06-03-16 Fig 6. Package outline SOD80C 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BZV55-B2V4 to BZV55-C75 [1] Package SOD80C Description 4 mm pitch, 8 mm tape and reel Packing quantity 2500 -115 10000 -135 For further information and the availability of packing methods, see Section 13. BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 8 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes 10. Soldering 4.55 4.30 2.30 solder lands solder paste 2.25 1.70 1.60 solder resist occupied area Dimensions in mm 0.90 (2x) sod080c Fig 7. Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist 2.90 1.70 occupied area tracks Dimensions in mm sod080c Fig 8. Wave soldering footprint SOD80C BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 9 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes 11. Revision history Table 11. Revision history Release date 20110126 Data sheet status Product data sheet Change notice Supersedes BZV55_SER v.4 Document ID BZV55_SER v.5 Modifications: • • • • Section 4 “Marking”: updated Table 6 “Thermal characteristics”: changed Rth(j-t) for Rth(j-sp) Figure 6: superseded by minimized outline drawing Section 12 “Legal information”: updated Product data sheet Product specification Product specification Product specification CPCN200508022F BZV55 v.3 BZV55 v.2 BZV55 v.1 - BZV55_SER v.4 BZV55 v.3 BZV55 v.2 BZV55 v.1 20070719 20020228 19990521 19960426 BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 10 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. © NXP B.V. 2011. All rights reserved. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BZV55_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 26 January 2011 11 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BZV55_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 26 January 2011 12 of 13 NXP Semiconductors BZV55 series Voltage regulator diodes 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 26 January 2011 Document identifier: BZV55_SER