BZV85-C4V7

BZV85 series Voltage regulator diodes Rev. 03 — 10 November 2009 Product data sheet 1. Product profile 1.1 General description Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. The diodes are available in the normalized E24 approximately ±5 % tolerance range. The series consists of 33 types with nominal working voltages from 3.6 V to 75 V. 1.2 Features I Total power dissipation: max. 1.3 W I Working voltage range: nominal 3.3 V to 75 V (E24 range) I Small hermetically sealed glass package I Tolerance series: approximately ±5 % I Non-repetitive peak reverse power dissipation: max. 60 W 1.3 Applications I Stabilization purposes 1.4 Quick reference data Table 1. Symbol VF Ptot Quick reference data Parameter forward voltage total power dissipation Tamb = 25 °C; lead length 10 mm PZSM [1] [2] [3] [1] Conditions IF = 50 mA Min - Typ - Max 1 1 1.3 60 Unit V W W W [2] non-repetitive peak reverse power dissipation square wave; tp = 100 µs [3] Device mounted on a Printed-Circuit Board (PCB) with 1 cm2 copper area per lead. If the leads are kept at Ttp = 55 °C at 4 mm from body. Tj = 25 °C prior to surge NXP Semiconductors BZV85 series Voltage regulator diodes 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline k a Graphic symbol 1 2 006aaa152 [1] The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Package Name BZV85 [1] Type number series[1] Description hermetically sealed glass package; axial leaded; 2 leads Version SOD66 - The series consists of 33 types with nominal working voltages from 3.3 V to 75 V. 4. Marking Table 4. Marking codes Marking code The diodes are type branded. Type number BZV85 series BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 2 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IF IZSM Parameter forward current non-repetitive peak reverse current square wave; tp = 100 µs half sine wave; tp = 10 ms Ptot total power dissipation Tamb = 25 °C; lead length 10 m m PZSM Tj Tstg [1] [2] [3] [2] [1] Conditions Min - Max 500 see Table 8 see Table 8 1 Unit mA [1] - W [3] −65 1.3 60 200 +200 W W °C °C non-repetitive peak reverse power dissipation junction temperature storage temperature square wave; tp = 100 µs [1] Tj = 25 °C prior to surge Device mounted on a PCB with 1 cm2 copper area per lead. If the leads are kept at Ttp = 55 °C at 4 mm from body. BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 3 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes 6. Thermal characteristics Table 6. Symbol Rth(j-t) Rth(j-a) [1] Thermal characteristics Parameter thermal resistance from junction to tie-point thermal resistance from junction to ambient Conditions lead length 4 mm lead length 10 mm [1] Min - Typ - Max 110 175 Unit K/W K/W Device mounted on a PCB with 1 cm2 copper area per lead. 103 Rth(j-t) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 10 0.10 0.05 006aab844 0.02 0.01 0 1 10−2 10−1 1 10 102 103 tp (ms) 104 Fig 1. Thermal resistance from junction to tie-point as a function of pulse duration; lead length 4 mm 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol VF Parameter forward voltage Conditions IF = 50 mA Min Typ Max 1 Unit V BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 4 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes Table 8. Characteristics per type Tj = 25 °C unless otherwise specified. BZV85- Working Cxxx voltage VZ (V) at Itest Min 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 Max 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 80.0 Differential Temperature Test resistance coefficient current Itest rdif (Ω) SZ (mV/K) (mA) at Itest at Itest Max 15 15 13 13 10 7 4 3.5 3 5 5 8 10 10 10 15 15 20 24 25 30 40 45 45 50 60 75 100 125 150 175 200 225 Min −3.5 −3.5 −2.7 −2.0 −0.5 0 0.6 1.3 2.5 3.1 3.8 4.7 5.3 6.3 7.4 8.9 10.7 11.8 13.6 16.6 18.3 20.1 22.4 24.8 27.2 29.6 34.0 37.4 40.8 46.8 52.2 60.5 66.5 Max −1.0 −1.0 0 0.7 2.2 2.7 3.6 4.3 5.5 6.1 7.2 8.5 9.3 10.8 12.0 13.6 15.4 17.1 19.1 22.1 24.3 27.5 32.0 35.0 39.9 43.0 48.3 52.5 56.5 63.0 72.5 81.0 88.0 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4 Diode Reverse capacitance current Cd (pF) IR (µA) at f = 1 MHz; VR = 0 V Max 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 50 50 45 45 45 40 40 40 40 35 35 35 Max 50 10 5 3 3 2 2 2 1 0.7 0.7 0.2 0.2 0.2 0.2 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1.0 1.0 1.0 1.0 2.0 2.0 3.0 4.0 4.5 5.0 6.5 7.0 7.7 8.4 9.1 10.5 11.0 12.5 14.0 15.5 17 19 21 23 25 27 30 33 36 39 43 48 53 Non-repetitive peak reverse current IZSM at tp = 100 µs; at tp = 10 ms; Tamb = 25 °C Tamb = 25 °C VR (V) Max (A) 8.0 8.0 8.0 8.0 8.0 8.0 7.0 7.0 5.0 5.0 4.0 4.0 3.0 3.0 3.0 2.5 1.75 1.75 1.75 1.5 1.5 1.2 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.4 0.35 0.3 Max (mA) 2000 1950 1850 1800 1750 1700 1620 1550 1500 1400 1340 1200 1100 1000 900 760 700 600 540 500 450 400 380 350 320 296 270 246 226 208 186 171 161 BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 5 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes 102 IZSM (A) (1) mbg802 300 IF (mA) 200 mbg925 10 1 (2) (1) (2) 100 10−1 1 0 10 VZnom (V) 102 0 0.5 VF (V) 1.0 (1) tp = 10 µs; half sine wave; Tamb = 25 °C (2) tp = 10 ms; half sine wave; Tamb = 25 °C (1) Tj = 200 °C (2) Tj = 25 °C Fig 2. Non-repetitive peak reverse current as a function of the nominal working voltage 10 mbg926 Fig 3. Forward current as a function of forward voltage; typical values mbg800 (1) 100 SZ (mV/K) SZ (mV/K) 5 10 9V1 8V2 7V5 6V8 80 (2) 60 6V2 5V6 5V1 4V7 4V3 3V6 3V9 (3) 40 0 20 −5 0 25 IZ (mA) 50 0 1 10 VZnom (V) 102 BZV85-C3V6 to BZV85-C10 Tj = 25 °C to 150 °C For types above 7.5 V the temperature coefficient is independent of current; see Table 8. IZ = Itest Tj = 25 °C to 150 °C (1) Maximum values (2) Typical values (3) Minimum values Fig 4. Temperature coefficient as a function of working current; typical values Fig 5. Temperature coefficient as a function of working current; typical values BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 6 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes 8. Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD66 (1) k a b D L G1 L Dimensions Unit mm b D 2.6 G1 4.8 25.4 L 0 2 scale sod066_po max 0.81 nom min 4 mm Note 1. The marking band indicates the cathode. Outline version SOD66 References IEC JEDEC DO-41 JEITA European projection Issue date 97-06-20 09-10-09 Fig 6. Package outline SOD66 (DO-41) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BZV85 series[2] Package SOD66 Description 52 mm tape ammopack, axial 52 mm reel pack, axial [1] [2] For further information and the availability of packing methods, see Section 11. The series consists of 33 types with nominal working voltages from 3.3 V to 75 V. Packing quantity 10000 -133 -113 BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 7 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes 10. Revision history Table 10. Revision history Release date 20091110 Data sheet status Product data sheet Change notice Supersedes BZV85_2 Document ID BZV85_SER_3 Modifications: • • • • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Table 6: Rth(j-tp) redefined to Rth(j-t) thermal resistance from junction to tie-point Figure 1: Rth(j-tp) redefined to Rth(j-t) thermal resistance from junction to tie-point Table 8 “Characteristics per type”: IZtest redefined to Itest test current Figure 6 “Package outline SOD66 (DO-41)”: updated Product specification Product specification BZV85_1 - BZV85_2 BZV85_1 19990511 19960426 BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 8 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 9 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 November 2009 Document identifier: BZV85_SER_3