BZV90-C30,115

厂商：
NXP(恩智浦)
封装：
TO-261-4
描述：
DIODE ZENER 30V 1.5W SOT223

数据手册：

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BZV90-C30,115 数据手册

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BZV90 series Voltage regulator diodes Product data sheet Supersedes data of 1996 Oct 25 1999 May 17 NXP Semiconductors Product data sheet Voltage regulator diodes FEATURES BZV90 series PINNING • Total power dissipation: max. 1 500 mW • Tolerance series: approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) PIN 1 2, 4 3 DESCRIPTION anode cathode anode • Non-repetitive peak reverse power dissipation: max. 40 W. 4 handbook, halfpage APPLICATIONS • General regulation functions. 3 1 DESCRIPTION Medium-power voltage regulator diodes in SOT223 plastic SMD packages. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV90-C2V4 to C75). 2, 4 1 2 3 Top view MAM242 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. − IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tj = 25 °C prior to surge see Table “Per type” Ptot total power dissipation Tamb = 25 °C; note 1 PZSM non-repetitive peak reverse power dissipation tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.2 Tstg Tj MAX. UNIT 400 mA − 1 500 mW − 40 W storage temperature −65 +150 °C junction temperature − 150 °C Note 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF 1999 May 17 PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.3 2 MIN. MAX. UNIT − 1.0 V DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (μA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 3 450 50 1.0 6.0 5 450 20 1.0 6.0 0 5 450 10 1.0 6.0 0 5 450 5 1.0 6.0 −2.4 0 5 450 5 1.0 6.0 −3.5 −2.5 0 5 450 3 1.0 6.0 90 −3.5 −2.5 0 5 450 3 1.0 6.0 80 −3.5 −1.4 0.2 5 300 3 2.0 6.0 40 60 −2.7 −0.8 1.2 5 300 2 2.0 6.0 6.0 15 40 −2.0 1.2 2.5 5 300 1 2.0 6.0 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0 6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0 7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0 8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0 9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0 10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0 11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5 12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5 13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5 15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0 16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5 18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5 20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5 TYP. MAX. MIN. TYP. MAX. MAX. 2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 2V7 2.5 2.9 75 100 −3.5 −2.0 0 3V0 2.8 3.2 80 95 −3.5 −2.1 3V3 3.1 3.5 85 95 −3.5 −2.4 3V6 3.4 3.8 85 90 −3.5 3V9 3.7 4.1 85 90 4V3 4.0 4.6 80 4V7 4.4 5.0 50 5V1 4.8 5.4 5V6 5.2 6V2 5.8 6V8 MAX. Product data sheet VR (V) MAX. BZV90 series MAX. MIN. NXP Semiconductors BZV90CXXX WORKING VOLTAGE VZ (V) at IZtest Voltage regulator diodes 1999 May 17 Per type Tj = 25 °C unless otherwise specified. TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (μA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C 4 MAX. MAX. VR (V) 5 60 0.05 15.4 1.25 22.0 5 55 0.05 16.8 1.25 25.3 2 50 0.05 18.9 1.0 26.6 29.4 2 50 0.05 21.0 1.0 27.4 29.7 33.4 2 45 0.05 23.1 0.9 30.4 33.0 37.4 2 45 0.05 25.2 0.8 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3 68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25 75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2 MIN. MAX. TYP. MAX. MIN. TYP. MAX. 22 20.8 23.3 20 55 16.4 18.4 20.0 24 22.8 25.6 25 70 18.4 20.4 27 25.0 28.9 25 80 21.4 23.4 30 28.0 32.0 30 80 24.4 33 31.0 35.0 35 80 36 34.0 38.0 35 90 39 37.0 41.0 40 43 40.0 46.0 47 44.0 50.0 51 48.0 56 62 MAX. NXP Semiconductors DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest Voltage regulator diodes 1999 May 17 BZV90CXXX WORKING VOLTAGE VZ (V) at IZtest Product data sheet BZV90 series NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 83.3 K/W lead length max.; note 1 Note 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. GRAPHICAL DATA MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 100 10 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 1999 May 17 5 0.8 VF (V) 1 Forward current as a function of forward voltage; typical values. NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series MBG927 1 handbook, full pagewidth 4V3 SZ (mV/K) 3V9 3V6 0 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 IZ (A) BZV90-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 10 handbook, halfpage SZ (mV/K) 10 9V1 5 8V2 7V5 6V8 6V2 5V6 5V1 0 4V7 −5 0 4 8 12 16 IZ (mA) 20 BZV90-C4V7 to C10. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. 1999 May 17 6 1 NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 1999 May 17 REFERENCES IEC JEDEC EIAJ SC-73 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 NXP Semiconductors Product data sheet Voltage regulator diodes BZV90 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this 1999 May 17 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp9 Date of release: 1999 May 17 Document order number: 9397 750 05928

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BZV90-C30,115

物料型号：BZV90系列

器件简介： - 这些是中功率的电压调节二极管，采用SOT223塑料表面贴装封装。 - 该系列包含37种类型，工作电压范围为2.4至75伏（BZV90-C2V4至C75）。 - 这些二极管适用于一般调节功能。

引脚分配： - PIN 1: 阳极（anode） - PIN 2: 阴极（cathode） - PIN 3: 阳极（anode）

参数特性： - 总功率消耗：最大1500毫瓦 - 公差系列：大约±5% - 工作电压范围：名义值为2.4至75伏（E24范围） - 非重复峰值反向功率消耗：最大40瓦 - 存储温度：-65至+150摄氏度 - 接点温度：最大150摄氏度

功能详解： - 这些二极管在电路中提供电压调节功能，确保电路在规定的电压范围内稳定工作。

应用信息： - 适用于一般调节功能，如电源电压稳定。

封装信息： - 封装类型：SOT223 - 封装尺寸：具体尺寸数据以毫米为单位列出，包括长度、宽度和高度等。

电气特性： - 连续正向电流（IF）：最大400毫安 - 正向电压（VF）：在50毫安测试电流下，典型值为1.0伏

热特性： - 从结到环境的热阻（Rthj-a）：83.3 K/W（在最大引线长度条件下）

图形数据： - 提供了非重复峰值反向功率消耗与持续时间的关系图。 - 提供了正向电流与正向电压的关系图。 - 提供了工作电流与温度系数的关系图。