BZX384-B3V6

DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes FEATURES • Total power dissipation: max. 300 mW • Two tolerance series: ±2% and approx. ±5% • Working voltage range: nominal 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2% (BZX384-B) and approx. ±5% (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. PINNING PIN 1 2 BZX384 series handbook, halfpage 1 Top view The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323; SC-76) and symbol. ; ; DESCRIPTION cathode anode 2 MAM387 2004 Mar 22 2 NXP Semiconductors Product data sheet Voltage regulator diodes MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE BZX384 series TYPE NUMBER MARKING CODE Marking codes for BZX384-B2V4 to BZX384-B75 BZX384-B2V4 BZX384-B2V7 BZX384-B3V0 BZX384-B3V3 BZX384-B3V6 BZX384-B3V9 BZX384-B4V3 BZX384-B4V7 BZX384-B5V1 BZX384-B5V6 K1 K2 K3 K4 K5 K6 K7 K8 K9 L1 BZX384-B6V2 BZX384-B6V8 BZX384-B7V5 BZX384-B8V2 BZX384-B9V1 BZX384-B10 BZX384-B11 BZX384-B12 BZX384-B13 BZX384-B15 L2 L3 L4 L5 L6 L7 L8 L9 M1 M2 BZX384-B16 BZX384-B18 BZX384-B20 BZX384-B22 BZX384-B24 BZX384-B27 BZX384-B30 BZX384-B33 BZX384-B36 BZX384-B39 M3 M4 M5 M6 M7 M8 M9 N0 N1 N2 BZX384-B43 BZX384-B47 BZX384-B51 BZX384-B56 BZX384-B62 BZX384-B68 BZX384-B75 N3 N4 N5 N6 N7 N8 N9 Marking codes for BZX384-C2V4 to BZX384-C75 BZX384-C2V4 BZX384-C2V7 BZX384-C3V0 BZX384-C3V3 BZX384-C3V6 BZX384-C3V9 BZX384-C4V3 BZX384-C4V7 BZX384-C5V1 BZX384-C5V6 T3 T4 T5 T6 T7 T8 T9 T0 D5 D6 BZX384-C6V2 BZX384-C6V8 BZX384-C7V5 BZX384-C8V2 BZX384-C9V1 BZX384-C10 BZX384-C11 BZX384-C12 BZX384-C13 BZX384-C15 T1 D7 D8 D9 D0 T2 DA DB DC DD BZX384-C16 BZX384-C18 BZX384-C20 BZX384-C22 BZX384-C24 BZX384-C27 BZX384-C30 BZX384-C33 BZX384-C36 BZX384-C39 DE DF DG DH DJ DK DL DM DN DP BZX384-C43 BZX384-C47 BZX384-C51 BZX384-C56 BZX384-C62 BZX384-C68 BZX384-C75 DR DS DT DU DV DW DX ORDERING INFORMATION TYPE NUMBER BZX384-B2V4 to BZX384-B75 BZX384-C2V4 to BZX384-C75 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD323 2004 Mar 22 3 NXP Semiconductors Product data sheet Voltage regulator diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM PZSM Ptot Tstg Tj Note 1. Refer to SOD323 standard mounting conditions. CHARACTERISTICS Total BZX384-B and C series Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current; BZX384-B/C2V4 BZX384-B/C2V7 BZX384-B/C3V0 BZX384-B/C3V3 BZX384-B/C3V6 BZX384-B/C3V9 BZX384-B/C4V3 BZX384-B/C4V7 BZX384-B/C5V1 BZX384-B/C5V6 BZX384-B/C6V2 BZX384-B/C6V8 BZX384-B/C7V5 BZX384-B/C8V2 BZX384-B/C9V1 BZX384-B/C10 BZX384-B/C11 BZX384-B/C12 BZX384-B/C13 BZX384-B/C15 to 75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZnom CONDITIONS IF = 10 mA; see Fig.3 IF = 100 mA; see Fig.3 PARAMETER continuous forward current non-repetitive peak reverse current non-repetitive peak reverse power dissipation total power dissipation storage temperature junction temperature tp = 100 μs; square wave; Tamb = 25 °C; prior to surge tp = 100 μs; square wave; Tamb = 25 °C; prior to surge Tamb = 25 °C; note 1 CONDITIONS − MIN. BZX384 series MAX. 250 A UNIT mA see Tables 1 and 2 − − −65 −65 40 300 +150 +150 W mW °C °C MAX. 0.9 1.1 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 V V UNIT μA μA μA μA μA μA μA μA μA μA μA μA μA nA nA nA nA nA nA nA 2004 Mar 22 4 Table 1 Per type BZX384-B/C2V4 to B/C24 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. ±2% (B) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.80 11.80 12.70 14.70 15.70 17.60 19.60 21.60 23.50 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.20 12.20 13.30 15.30 16.30 18.40 20.40 22.40 24.50 Tol. ±5% (C) MIN. 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 30 40 40 50 50 50 50 50 50 50 60 60 60 MAX. 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 20 25 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 TEMPERATURE COEFFICIENT SZ (mV/K) at IZtest = 5 mA (see Figs 4 and 5) MIN. −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 TYP. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 18.4 20.4 MAX. 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. 2004 Mar 22 5 NXP Semiconductors Voltage regulator diodes BZXBxxx Cxxx 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 BZX384 series 2.0 1.5 1.5 1.5 1.25 1.25 Product data sheet Table 2 Per type BZX384-B/C27 to B/C75 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 2 mA Tol. ±2% (B) MIN. 27 30 33 36 39 43 47 51 56 26.50 29.40 32.30 35.30 38.20 42.10 46.10 50.00 54.90 60.80 66.60 73.50 MAX. 27.50 30.60 33.70 36.70 39.80 43.90 47.90 52.00 57.10 63.20 69.40 76.50 Tol. ±5% (C) MIN. 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 0.5 mA TYP. 65 70 75 80 80 85 85 90 100 120 150 170 MAX. 300 300 325 350 350 375 375 400 425 450 475 500 at IZtest = 2 mA TYP. 25 30 35 35 40 45 50 60 70 80 90 95 MAX. 80 80 80 90 130 150 170 180 200 215 240 255 TEMPERATURE COEFFICIENT SZ (mV/K) at IZtest = 2 mA (see Figs 4 and 5) MIN. 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 TYP. 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 MAX. 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 50 50 45 45 45 40 40 40 40 35 35 35 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. 2004 Mar 22 6 NXP Semiconductors Voltage regulator diodes BZXBxxx Cxxx 62 68 75 BZX384 series Product data sheet NXP Semiconductors Product data sheet Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) Notes 1. Device mounted on an FR4 printed-circuit board. 2. Soldering point of the cathode tab. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point note 1 note 2 CONDITIONS BZX384 series VALUE 415 110 UNIT K/W K/W 2004 Mar 22 7 NXP Semiconductors Product data sheet Voltage regulator diodes GRAPHICAL DATA BZX384 series 103 handbook, halfpage PZSM (W) 102 MBG801 MBG781 handbook, halfpage 300 IF (mA) 200 (1) 10 (2) 100 1 10−1 1 duration (ms) 10 0 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.3 Forward current as a function of forward voltage; typical values. MBG783 MBG782 handbook, halfpage 0 handbook, halfpage 10 12 SZ (mV/K) −1 4V3 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8 3V9 3V6 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 0 20 40 IZ (mA) 60 −5 0 4 8 12 16 IZ (mA) 20 BZX384-B/C2V4 to B/C4V3. Tj = 25 to 150 °C. BZX384-B/C4V7 to B/C12. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. Fig.5 Temperature coefficient as a function of working current; typical values. 2004 Mar 22 8 NXP Semiconductors Product data sheet Voltage regulator diodes PACKAGE OUTLINE Plastic surface-mounted package; 2 leads BZX384 series SOD323 D A E X HD v M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.05 bp 0.40 0.25 c 0.25 0.10 D 1.8 1.6 E 1.35 1.15 HD 2.7 2.3 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 REFERENCES IEC JEDEC JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 2004 Mar 22 9 NXP Semiconductors Product data sheet Voltage regulator diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION BZX384 series This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Mar 22 10 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/02/pp11 Date of release: 2004 Mar 22 Document order number: 9397 750 12616