BZX79-B3V9

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 25 2002 Feb 27 NXP Semiconductors Product data sheet Voltage regulator diodes FEATURES • Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage BZX79 series k a MAM239 APPLICATIONS • Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±2% (BZX79-B) and approx. ±5% (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm. ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 10 mA; see Fig.4 MAX. 0.9 UNIT V PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 μs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; note 1 Tamb = 50 °C; note 2 CONDITIONS − MIN. MAX. 250 UNIT mA see Tables 1 and 2 A − − 400 500 40 +200 +200 mW mW W °C °C tp = 100 μs; square wave; − Tj = 25 °C prior to surge; see Fig.3 −65 −65 2002 Feb 27 2 NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series SYMBOL IR PARAMETER reverse current BZX79-B/C2V4 BZX79-B/C2V7 BZX79-B/C3V0 BZX79-B/C3V3 BZX79-B/C3V6 BZX79-B/C3V9 BZX79-B/C4V3 BZX79-B/C4V7 BZX79-B/C5V1 BZX79-B/C5V6 BZX79-B/C6V2 BZX79-B/C6V8 BZX79-B/C7V5 BZX79-B/C8V2 BZX79-B/C9V1 BZX79-B/C10 BZX79-B/C11 BZX79-B/C12 BZX79-B/C13 BZX79-B/C15 to BZX79-B/C75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V CONDITIONS MAX. 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 UNIT μA μA μA μA μA μA μA μA μA μA μA μA μA nA nA nA nA nA nA nA VR = 0.7VZnom 2002 Feb 27 3 Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. ±2% (B) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.80 11.80 12.70 14.70 15.70 17.60 19.60 21.60 23.50 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.20 12.20 13.30 15.30 16.30 18.40 20.40 22.40 24.50 Tol. approx. ±5% (C) MIN. 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) DIODE CAP. NON-REPETITIVE PEAK Cd (pF) REVERSE CURRENT IZSM (A) at f = 1 MHz; VR = 0 V at tp = 100 μs; Tamb = 25 °C 2002 Feb 27 4 NXP Semiconductors Voltage regulator diodes BZX79Bxxx Cxxx at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 30 40 40 50 50 50 50 50 50 50 60 60 60 MAX. 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 20 25 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 MIN. −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 12.3 14.1 15.9 TYP. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 15.6 17.6 19.6 MAX. 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 MAX. BZX79 series Product data sheet Table 2 Per type, BZX79-B/C27 to BZX79-B/C75 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 2 mA Tol. ±2% (B) MIN. 27 30 33 36 39 43 47 51 56 62 68 75 26.50 29.40 32.30 35.30 38.20 42.10 46.10 50.00 54.90 60.80 66.60 73.50 MAX. 27.50 30.60 33.70 36.70 39.80 43.90 47.90 52.00 57.10 63.20 69.40 76.50 Tol. approx. ±5% (C) MIN. 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 5 and 6) DIODE CAP. NON-REPETITIVE PEAK Cd (pF) REVERSE CURRENT IZSM (A) at f = 1 MHz; VR = 0 V at tp = 100 μs; Tamb = 25 °C 2002 Feb 27 5 NXP Semiconductors Voltage regulator diodes BZX79Bxxx Cxxx at IZtest = 0.5 mA at IZtest = 2 mA TYP. 65 70 75 80 80 85 85 90 100 120 150 170 MAX. 300 300 325 350 350 375 375 400 425 450 475 500 TYP. 25 30 35 35 40 45 50 60 70 80 90 95 MAX. 80 80 80 90 130 150 170 180 200 215 240 255 MIN. 18.0 20.6 23.3 26.0 28.7 31.4 35.0 38.6 42.2 58.8 65.6 73.4 TYP. 22.7 25.7 28.7 31.8 34.8 38.8 42.9 46.9 52.0 64.4 71.7 80.2 MAX. 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 50 50 45 45 45 40 40 40 40 35 35 35 MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 MAX. BZX79 series Product data sheet NXP Semiconductors Product data sheet Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA PARAMETER CONDITIONS BZX79 series VALUE 300 380 UNIT K/W K/W thermal resistance from junction to tie-point lead length 8 mm. thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 103 handbook, full pagewidth Rth j-a (K/W) δ=1 0.75 0.50 0.33 0.20 0.10 0.05 MBG930 102 10 0.02 0.01 ≤0.001 tp T tp T δ= 1 10−1 1 10 102 103 104 tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 2002 Feb 27 6 NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series 103 handbook, halfpage PZSM (W) 102 MBG801 MBG781 handbook, halfpage 300 IF (mA) 200 (1) 10 (2) 100 1 10−1 1 duration (ms) 10 0 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 Typical forward current as a function of forward voltage. MBG783 MBG782 handbook, halfpage 0 handbook, halfpage 10 12 SZ (mV/K) −1 4V3 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8 3V9 3V6 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 0 20 40 IZ (mA) 60 −5 0 4 8 12 16 IZ (mA) 20 BZX79-B/C2V4 to BZX79-B/C4V3. Tj = 25 to 150 °C. BZX79-B/C4V7 to BZX79-B/C12. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. Fig.6 Temperature coefficient as a function of working current; typical values. 2002 Feb 27 7 NXP Semiconductors Product data sheet Voltage regulator diodes PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads BZX79 series SOD27 (1) b D L G1 L DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.56 D max. 1.85 G1 max. 4.25 L min. 25.4 0 1 scale 2 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD27 REFERENCES IEC A24 JEDEC DO-35 EIAJ SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09 2002 Feb 27 8 NXP Semiconductors Product data sheet Voltage regulator diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION BZX79 series This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Feb 27 9 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp10 Date of release: 2002 Feb 27 Document order number: 9397 750 09387