BZX84-B4V3

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes FEATURES • Total power dissipation: max. 250 mW • Three tolerance series: ±1%, ±2% and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. handbook, halfpage 2 BZX84 series PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION 1 DESCRIPTION Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The diodes are available in the normalized E24 ±1% (BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. 3 Top view MAM243 2 n.c. 3 1 Fig.1 Simplified outline (SOT23) and symbol. 2003 Apr 10 2 NXP Semiconductors Product data sheet Voltage regulator diodes MARKING TYPE NUMBER MARKING CODE(1) Y50 or ∗50 Y51 or ∗51 Y52 or ∗52 Y53 Y55 or ∗55 Y56 or ∗56 Y57 or ∗57 Y58 or ∗58 Y59 or ∗59 Z50 or ∗Z0 Z51 or ∗Z1 Z52 or ∗S1 Z53 or ∗S2 Z54 or ∗S3 Z55 or ∗S4 Z56 or ∗S7 Z57 or ∗S8 TYPE NUMBER MARKING CODE(1) Y60 or ∗60 Y61 or ∗61 Y62 or ∗62 Y63 or ∗63 Y64 or ∗64 Y65 or ∗65 Y66 or ∗04 Y67 or ∗67 Y69 or ∗69 TYPE NUMBER MARKING CODE(1) BZX84 series TYPE NUMBER MARKING CODE(1) Y80 or ∗C5 Y81 Y82 or ∗C6 Y83 Y84 Y85 Y86 or ∗86 − − − Z80 or ∗S5 Z81 or ∗S6 Z82 or ∗S9 Z83 or ∗R0 Z84 or ∗R3 Z85 or ∗R4 Z86 or ∗R7 − − − Y15 or ∗B4 Y16 or ∗B5 Y17 or ∗B7 Y18 or ∗B8 Y19 or ∗B9 Y20 or ∗B0 Y21 or ∗A1 − − − Marking codes for BZX84-A2V4 to BZX84-A75 BZX84-A2V4 BZX84-A2V7 BZX84-A3V0 BZX84-A3V3 BZX84-A3V6 BZX84-A3V9 BZX84-A4V3 BZX84-A4V7 BZX84-A5V1 BZX84-A5V6 BZX84-A6V2 BZX84-A6V8 BZX84-A7V5 BZX84-A8V2 BZX84-A10 BZX84-A11 BZX84-A12 BZX84-A13 BZX84-A15 BZX84-A16 BZX84-A18 BZX84-A20 BZX84-A22 BZX84-A24 BZX84-A27 BZX84-A30 BZX84-A33 BZX84-A39 Y70 Y71 Y73 Y74 Y75 or ∗75 Y76 Y77 Y78 or ∗C3 Y79 or ∗C4 Z70 or ∗70 Z71 or ∗71 Z72 or ∗72 Z73 or ∗73 Z74 or ∗74 Z75 or ∗Z5 Z76 or ∗Z4 Z77 or ∗Y1 Z78 or ∗Y2 Z79 or ∗S0 Y5∗ Y6∗ Y7∗ Y8∗ Y9∗ Y10 or ∗T2 Y11 or ∗T5 Y12 or ∗T6 Y13 or ∗T7 Y14 or ∗T8 BZX84-A43 BZX84-A47 BZX84-A56 BZX84-A62 BZX84-A68 BZX84-A75 − − − Y72 or ∗C2 BZX84-A51 Y54 or ∗C1 BZX84-A9V1 Y68 or ∗C0 BZX84-A36 Marking codes for BZX84-B2V4 to BZX84-B75 BZX84-B2V4 BZX84-B2V7 BZX84-B3V0 BZX84-B3V3 BZX84-B3V6 BZX84-B3V9 BZX84-B4V3 BZX84-B4V7 BZX84-B5V1 BZX84-B5V6 BZX84-B6V2 BZX84-B6V8 BZX84-B7V5 BZX84-B8V2 BZX84-B9V1 BZX84-B10 BZX84-B11 BZX84-B12 Z60 or ∗R5 BZX84-B16 Z61 or ∗R6 BZX84-B18 Z62 or ∗R8 BZX84-B20 Z63 or ∗R9 BZX84-B22 Z64 or ∗T1 Z65 or ∗66 Z66 or ∗Z6 Z67 or ∗Z7 Z68 or ∗Z8 Z69 or ∗Z9 Z4∗ Z5∗ Z6∗ Z7∗ Z8∗ Z9∗ Y1∗ Y2∗ Y3∗ Y4∗ BZX84-B24 BZX84-B27 BZX84-B30 BZX84-B33 BZX84-B36 BZX84-B39 BZX84-B43 BZX84-B47 BZX84-B51 BZX84-B56 BZX84-B62 BZX84-B68 BZX84-B75 − − − Z58 or ∗R1 BZX84-B13 Z59 or ∗R2 BZX84-B15 Z11 or ∗T3 Z12 or ∗T4 Z13 or ∗T9 Z14 or ∗B1 Z15 or ∗B2 Z16 or ∗B3 Z17 or ∗B6 Z1∗ Z2∗ Z3∗ Marking codes for BZX84-C2V4 to BZX84-C75 BZX84-C2V4 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3 BZX84-C4V7 BZX84-C5V1 BZX84-C5V6 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. BZX84-C6V2 BZX84-C6V8 BZX84-C7V5 BZX84-C8V2 BZX84-C9V1 BZX84-C10 BZX84-C11 BZX84-C12 BZX84-C13 BZX84-C15 BZX84-C16 BZX84-C18 BZX84-C20 BZX84-C22 BZX84-C24 BZX84-C27 BZX84-C30 BZX84-C33 BZX84-C36 BZX84-C39 BZX84-C43 BZX84-C47 BZX84-C51 BZX84-C56 BZX84-C62 BZX84-C68 BZX84-C75 − − − 2003 Apr 10 3 NXP Semiconductors Product data sheet Voltage regulator diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total BZX84-A and B and C series Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZX84-A/B/C2V4 BZX84-A/B/C2V7 BZX84-A/B/C3V0 BZX84-A/B/C3V3 BZX84-A/B/C3V6 BZX84-A/B/C3V9 BZX84-A/B/C4V3 BZX84-A/B/C4V7 BZX84-A/B/C5V1 BZX84-A/B/C5V6 BZX84-A/B/C6V2 BZX84-A/B/C6V8 BZX84-A/B/C7V5 BZX84-A/B/C8V2 BZX84-A/B/C9V1 BZX84-A/B/C10 BZX84-A/B/C11 BZX84-A/B/C12 BZX84-A/B/C13 BZX84-A/B/C15 to 75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZnom 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 CONDITIONS IF = 10 mA; see Fig.3 0.9 PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 μs; square wave; Tj = 25 °C prior to surge Tamb = 25 °C; note 1 tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.2 CONDITIONS − MIN. BZX84 series MAX. 200 UNIT mA see Tables 1 and 2 − − −65 −65 250 40 +150 +150 mW W °C °C MAX. V μA μA μA μA μA μA μA μA μA μA μA μA μA nA nA nA nA nA nA nA UNIT 2003 Apr 10 4 Table 1 Per type BZX84-A/B/C2V4 to A/B/C24 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. ±1% (A) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 2.37 2.67 2.97 3.26 3.56 3.86 4.25 4.65 5.04 5.54 6.13 6.73 7.42 8.11 9.00 9.90 10.80 11.88 12.87 14.85 15.84 17.82 19.80 21.78 23.76 MAX. 2.43 2.73 3.03 3.34 3.64 3.94 4.35 4.75 5.16 5.66 6.27 6.87 7.58 8.29 9.20 10.10 11.11 12.12 13.13 15.15 16.16 18.18 20.20 22.22 24.24 Tol. ±2% (B) MIN. 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.80 11.80 12.70 14.70 15.70 17.60 19.60 21.60 23.50 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.20 12.20 13.30 15.30 16.30 18.40 20.40 22.40 24.50 Tol. approx. ±5% (C) MIN. 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 30 40 40 50 50 50 50 50 50 50 60 60 60 MAX. 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. MAX. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 20 25 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 MIN. −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 TYP. MAX. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 18.4 20.4 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 4 and 5) DIODE CAP. NON-REPETITIVE Cd (pF) PEAK REVERSE CURRENT at f = 1 MHz; VR = 0 V IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 MAX. 2003 Apr 10 5 NXP Semiconductors Voltage regulator diodes BZX84Axxx Bxxx Cxxx BZX84 series 2.0 1.5 1.5 1.5 1.25 1.25 Product data sheet Table 2 Per type BZX84-A/B/C27 to A/B/C75 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 2 mA Tol. ±1% (A) MIN. 27 30 33 36 39 43 47 51 56 62 68 75 26.73 29.70 32.67 35.64 38.61 42.57 46.53 50.49 55.44 61.38 67.32 74.25 MAX. 27.27 30.30 33.33 36.36 39.39 43.43 47.47 51.51 56.56 62.62 68.68 75.75 Tol. ±2% (B) MIN. 26.50 29.40 32.30 35.30 38.20 42.10 46.10 50.00 54.90 60.80 66.60 73.50 MAX. 27.50 30.60 33.70 36.70 39.80 43.90 47.90 52.00 57.10 63.20 69.40 76.50 Tol. approx. ±5% (C) MIN. 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 DIFFERENTIAL RESISTANCE rdif (Ω) at at IZtest = 0.5 mA IZtest = 2 mA TYP. 65 70 75 80 80 85 85 90 100 120 150 170 MAX. 300 300 325 350 350 375 375 400 425 450 475 500 TYP. MAX. 25 30 35 35 40 45 50 60 70 80 90 95 80 80 80 90 130 150 170 180 200 215 240 255 MIN. 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 TYP. MAX. 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 50 50 45 45 45 40 40 40 40 35 35 35 TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 4 and 5) DIODE CAP. NON-REPETITIVE Cd (pF) PEAK REVERSE CURRENT at f = 1 MHz; VR = 0 V IZSM (A) at tp = 100 μs; Tamb = 25 °C MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 MAX. 2003 Apr 10 6 NXP Semiconductors Voltage regulator diodes BZX84Axxx Bxxx Cxxx BZX84 series Product data sheet NXP Semiconductors Product data sheet Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed circuit-board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS BZX84 series VALUE 330 500 UNIT K/W K/W 2003 Apr 10 7 NXP Semiconductors Product data sheet Voltage regulator diodes GRAPHICAL DATA BZX84 series 103 handbook, halfpage PZSM (W) 102 MBG801 MBG781 handbook, halfpage 300 IF (mA) 200 (1) 10 (2) 100 1 10−1 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). 1 duration (ms) 10 0 0.6 0.8 VF (V) 1 Tj = 25 °C. Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.3 Forward current as a function of forward voltage; typical values. MBG783 MBG782 handbook, halfpage 0 handbook, halfpage 10 12 SZ (mV/K) −1 4V3 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8 3V9 3V6 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 0 20 40 IZ (mA) 60 −5 0 4 8 12 16 IZ (mA) 20 BZX84-A/B/C2V4 to A/B/C4V3. Tj = 25 to 150 °C. BZX84-A/B/C4V7 to A/B/C12. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. Fig.5 Temperature coefficient as a function of working current; typical values. 2003 Apr 10 8 NXP Semiconductors Product data sheet Voltage regulator diodes PACKAGE OUTLINE BZX84 series Plastic surface mounted package; 3 leads SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Apr 10 9 NXP Semiconductors Product data sheet Voltage regulator diodes DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION BZX84 series This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2003 Apr 10 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp11 Date of release: 2003 Apr 10 Document order number: 9397 750 10959