CLF1G0060S-10U

CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 40 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW 1-Tone pulsed [1] [1] f PL Gp D (MHz) (W) (dB) (%) 200 10 17.7 42.6 500 10 16.7 46.6 1000 10 15 38.7 1500 10 14.3 32.6 2000 10 14.2 32.6 200 10 18.8 44 500 10 17.8 48.2 1000 10 16.8 39 1500 10 16.7 33.9 2000 10 17 33.2 Pulsed RF; tp = 15 s;  = 10 %. Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 40 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 2-Tone CW [1] [1] 2-Tone CW; f = 1 MHz. f PL(PEP) IMD3 (MHz) (W) (dBc) 500 5 47.4 1000 5 48.7 1500 5 44.7 2000 5 39.2 2500 5 40.4 CLF1G0060-10; CLF1G0060S-10 NXP Semiconductors Broadband RF power GaN HEMT 1.2 Features and benefits      Frequency of operation is from DC to 6.0 GHz 10 W general purpose broadband RF Power GaN HEMT Excellent ruggedness (VSWR = 10 : 1) High voltage operation (50 V) Thermally enhanced package 1.3 Applications  Commercial wireless infrastructure (cellular, WiMAX)  Radar  Broadband general purpose amplifier  Public mobile radios  Industrial, scientific, medical  Jammers  EMC testing  Defense application 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol CLF1G0060-10 (SOT1227A) 1 drain 2 gate 3 source    [1]    DDD CLF1G0060S-10 (SOT1227B) 1 drain 2 gate 3 source    [1]   [1] DDD Connected to flange. 3. Ordering information Table 4. Ordering information Type number CLF1G0060-10_1G0060S-10 Objective data sheet Package Name Description CLF1G0060-10 - flanged ceramic package; 2 mounting holes; 2 leads SOT1227A CLF1G0060S-10 - earless flanged ceramic package; 2 leads All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 January 2013 Version SOT1227B © NXP B.V. 2013. All rights reserved. 2 of 18 CLF1G0060-10; CLF1G0060S-10 NXP Semiconductors Broadband RF power GaN HEMT 4. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage IGF forward gate current Tstg storage temperature Tj junction temperature external RG = 5  measured via IR scan Min Max Unit - 150 V 8 +3 V - 3.7 mA 65 +150 C - 250 C 5. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case Tj = 200 C [1] [1] Typ Unit K/W Tj is measured via IR scan with case temperature of 85 C and power dissipation of W. 6. Characteristics Table 7. DC Characteristics Tcase = 25 C; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 7 V; IDS = 2.4 mA Min Typ Max Unit 150 - - V VGS(th) gate-source threshold voltage VDS = 0.1 V; IDS = 2.4 mA 2.4 2 1.6 V IDSX drain cut-off current VDS = 10 V; VGS = 3 V - 1.7 - A gfs forward transconductance VDS = 10 V; VGS = 0 V - 0.38 - S Table 8. RF Characteristics Test signal: pulsed RF; tp = 100 s;  = 10 %; RF performance at VDS = 50 V; IDq = 50 mA; Tcase = 25 C; unless otherwise specified in a class-AB production circuit. Symbol Parameter Conditions f frequency D drain efficiency PL = 10 W - 49.5 - % Gp power gain PL = 10 W - 14.5 - dB RLin input return loss PL = 10 W - 8.5 - dB PL = 10 W - 0.04 - dB Pdroop(pulse) pulse droop power CLF1G0060-10_1G0060S-10 Objective data sheet Min Typ Max Unit 3 - 3.5 GHz tr rise time PL = 10 W - 5 - ns tf fall time PL = 10 W - 5 - ns All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 January 2013 © NXP B.V. 2013. All rights reserved. 3 of 18 CLF1G0060-10; CLF1G0060S-10 NXP Semiconductors Broadband RF power GaN HEMT 7. Application information 7.1 Demo circuit &/)*81,9(56$/,13875(9 5)&& &/)*81,9(56$/2873875(9 5)&& 5 & & & & 5 & / & 5 & & & & & / & & & / & ( & 3 *1' 6 9 ' * & *1' ( % 9* *1' )% 4 4 3 3 $ 3 5 & ( DDD Printed-Circuit Board (PCB) material: Taconic RF35, r = 3.5, thickness 30 mils, 1 oz copper on each side. See Table 9 for list of components. Fig 1. The broadband amplifier (500 MHz to 2500 MHz) demo circuit outline Table 9. List of components See Figure 1. CLF1G0060-10_1G0060S-10 Objective data sheet Component Description Value Remarks A1 GaN bias module v2 - NXP C1 multilayer ceramic chip capacitor 3.9 pF ATC 600F C2 multilayer ceramic chip capacitor 3.0 pF ATC 600F C3 multilayer ceramic chip capacitor 1.2 pF ATC 600F C4, C8 multilayer ceramic chip capacitor 33 pF ATC 600F C9 multilayer ceramic chip capacitor 10 pF ATC 600F C10 electrolytic capacitor 10 nF, 50 V SMD 0805 C11 electrolytic capacitor 22 nF, 100 V SMD 0805 C12 electrolytic capacitor 1 nF, 100 V SMD 0805 All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 January 2013 © NXP B.V. 2013. All rights reserved. 4 of 18 CLF1G0060-10; CLF1G0060S-10 NXP Semiconductors Broadband RF power GaN HEMT Table 9. List of components …continued See Figure 1. CLF1G0060-10_1G0060S-10 Objective data sheet Component Description Value Remarks C13 electrolytic capacitor 100 nF, 50 V SMD 0805 C20 multilayer ceramic chip capacitor 1 nF ATC 700B C21 multilayer ceramic chip capacitor 100 pF ATC 700B C22, C26 electrolytic capacitor 10 nF, 200 V SMD 1210 C23 electrolytic capacitor 10 F, 100 V SMD 2220 C25 electrolytic capacitor 1 F, 100 V SMD 1206 Panasonic EEE-TK1J471AM C27 electrolytic capacitor 470 F, 63 V E1, E2 drain voltage connection - J1 RF in connector - J2 RF out connector - L1 inductor 100 nH Coilcraft 0805CS-101XJL L2 inductor 28 nH Coilcraft B08TJL L3 ferrite bead 5A Fair-Rite 2743019447 P1, P2, P3, P4 1 row, 4-way vertical DC connector header - Q1 transistor - CLF1G0060-10 Q2 transistor - NXP BC857B Q3 transistor - NXP PSMN8R2-80YS R1 resistor 10.0  Generic R2 resistor 10.0 k Generic R3 resistor 550  Generic R4 resistor 0.01  Susumu RL7520WT-R010-F All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 January 2013 © NXP B.V. 2013. All rights reserved. 5 of 18 CLF1G0060-10; CLF1G0060S-10 NXP Semiconductors Broadband RF power GaN HEMT 9',1 ( $ ,1     ' * 6 9* *$1%,$6  02'8/(  )%  & *1'   %  4 *1'  %&%  (   *1'         & —)9 5 ȍ  *1' ( 4 36015