GTL2008

GTL2008 12-bit GTL to LVTTL translator with power good control and high-impedance LVTTL and GTL outputs Rev. 04 — 19 February 2010 Product data sheet 1. General description The GTL2008 is a customized translator between dual Xeon processors, Platform Health Management, South Bridge and Power Supply LVTTL and GTL signals. Functionally and footprint identical to the GTL2007, the GTL2008 LVTTL and GTL outputs were changed to put them into a high-impedance state when EN1 and EN2 are LOW, with the exception of 11BO because its normal state is LOW, so it is forced LOW. EN1 and EN2 will remain LOW until VCC is at normal voltage, the other inputs are in valid states and VREF is at its proper voltage to assure that the outputs will remain high-impedance through power-up. The GTL2008 has the enable function that disables the error output to the monitoring agent for platforms that monitor the individual error conditions from each processor. This enable function can be used so that false error conditions are not passed to the monitoring agent when the system is unexpectedly powered down. This unexpected power-down could be from a power supply overload, a CPU thermal trip, or some other event of which the monitoring agent is unaware. A typical implementation would be to connect each enable line to the system power good signal or the individual enables to the VRD power good for each processor. Typically Xeon processors specify a VTT of 1.1 V to 1.2 V, as well as a nominal Vref of 0.73 V to 0.76 V. To allow for future voltage level changes that may extend Vref to 0.63 of VTT (minimum of 0.693 V with VTT of 1.1 V) the GTL2008 allows a minimum Vref of 0.66 V. Characterization results show that there is little DC or AC performance variation between these Vref levels. 2. Features and benefits Operates as a GTL to LVTTL sampling receiver or LVTTL to GTL driver Operates at GTL−/GTL/GTL+ signal levels EN1 and EN2 disable error output All LVTTL and GTL outputs are put in a high-impedance state when EN1 and EN2 are LOW 3.0 V to 3.6 V operation LVTTL I/O not 5 V tolerant Series termination on the LVTTL outputs of 30 Ω ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs Latch-up testing is done to JEDEC Standard JESD78 Class II, Level A which exceeds 500 mA Package offered: TSSOP28 3. Quick reference data Table 1. Quick reference data Tamb = 25 °C Symbol Cio Parameter input/output capacitance Conditions A port; VO = 3.0 V or 0 V B port; VO = VTT or 0 V Vref = 0.73 V; VTT = 1.1 V tPLH LOW to HIGH propagation delay HIGH to LOW propagation delay nA to nBI; see Figure 4 nBI to nA or nAO (open-drain outputs); see Figure 14 nA to nBI; see Figure 4 nBI to nA or nAO (open-drain outputs); see Figure 14 nA to nBI; see Figure 4 nBI to nA or nAO (open-drain outputs); see Figure 14 nA to nBI; see Figure 4 nBI to nA or nAO (open-drain outputs); see Figure 14 1 2 2 2 4 13 5.5 4 8 18 10 10 ns ns ns ns Min Typ 2.5 1.5 Max 3.5 2.5 Unit pF pF tPHL Vref = 0.76 V; VTT = 1.2 V tPLH LOW to HIGH propagation delay HIGH to LOW propagation delay 1 2 2 2 4 13 5.5 4 8 18 10 10 ns ns ns ns tPHL 4. Ordering information Table 2. Ordering information Tamb = −40 °C to +85 °C Type number Topside mark Package Name TSSOP28 Description plastic thin shrink small outline package; 28 leads; body width 4.4 mm Version SOT361-1 GTL2008PW GTL2008 GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 2 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 5. Functional diagram GTL2008 GTL VREF 1AO LVTTL outputs (open-drain) 2AO 1 2 27 1BI GTL inputs 3 26 2BI 5A LVTTL inputs/outputs (open-drain) 6A LVTTL input EN1 4 & 25 7BO1 GTL outputs 5 6 & 24 7BO2 23 7 (2) EN2 LVTTL input GTL input 11BI 1 22 11BO GTL output LVTTL input/output (open-drain) 11A 8 DELAY(1) 21 5BI GTL input 9BI 9 DELAY(1) 20 6BI GTL inputs 3AO LVTTL outputs (open-drain) 4AO 10 19 3BI 11 18 4BI 1 10AI1 LVTTL inputs 10AI2 13 12 1 17 10BO1 GTL outputs 16 10BO2 15 9AO LVTTL output 002aab968 (1) The enable on 7BO1/7BO2 include a delay that prevents the transient condition where 5BI/6BI go from LOW to HIGH, and the LOW to HIGH on 5A/6A lags up to 100 ns from causing a LOW glitch on the 7BO1/7BO2 outputs. (2) The 11BO output is driven LOW after VCC is powered up with EN2 LOW to prevent reporting of a fault condition before EN2 goes HIGH. Fig 1. Logic diagram of GTL2008 GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 3 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 6. Pinning information 6.1 Pinning VREF 1AO 2AO 5A 6A EN1 11BI 11A 9BI 1 2 3 4 5 6 7 8 9 28 VCC 27 1BI 26 2BI 25 7BO1 24 7BO2 23 EN2 22 11BO 21 5BI 20 6BI 19 3BI 18 4BI 17 10BO1 16 10BO2 15 9AO 002aab969 GTL2008PW 3AO 10 4AO 11 10AI1 12 10AI2 13 GND 14 Fig 2. Pin configuration for TSSOP28 6.2 Pin description Table 3. Symbol VREF 1AO 2AO 5A 6A EN1 11BI 11A 9BI 3AO 4AO 10AI1 10AI2 GND 9AO 10BO2 10BO1 4BI 3BI GTL2008_4 Pin description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Description GTL reference voltage data output (LVTTL), open-drain data output (LVTTL), open-drain data input/output (LVTTL), open-drain data input/output (LVTTL), open-drain enable input (LVTTL) data input (GTL) data input/output (LVTTL), open-drain data input (GTL) data output (LVTTL), open-drain data output (LVTTL), open-drain data input (LVTTL) data input (LVTTL) ground (0 V) data output (LVTTL), 3-state data output (GTL) data output (GTL) data input (GTL) data input (GTL) © NXP B.V. 2010. All rights reserved. All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 04 — 19 February 2010 4 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs Pin description …continued Pin 20 21 22 23 24 25 26 27 28 Description data input (GTL) data input (GTL) data output (GTL) enable input (LVTTL) data output (GTL) data output (GTL) data input (GTL) data input (GTL) positive supply voltage Table 3. Symbol 6BI 5BI 11BO EN2 7BO2 7BO1 2BI 1BI VCC 7. Functional description Refer to Figure 1 “Logic diagram of GTL2008”. 7.1 Function tables Table 4. GTL input signals H = HIGH voltage level; L = LOW voltage level. Input 1BI/2BI/3BI/4BI/9BI L H [1] Output[1] 1AO/2AO/3AO/4AO/9AO L H 1AO, 2AO, 3AO, 4AO and 5A/6A condition changed by ENn power good signal as described in Table 5 and Table 6. Table 5. EN1 power good signal H = HIGH voltage level; L = LOW voltage level. EN1 L H 1AO and 2AO 1BI and 2BI disconnected (high-Z) follows BI 5A 5BI disconnected 5BI connected Table 6. EN2 power good signal H = HIGH voltage level; L = LOW voltage level. EN2 L H 3AO and 4AO 3BI and 4BI disconnected (high-Z) follows BI 6A 6BI disconnected 6BI connected GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 5 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs Table 7. SMI signals H = HIGH voltage level; L = LOW voltage level; X = Don’t care. Inputs 10AI1/10AI2 L L H H L H EN2 H H H H L L 9BI L H L H X X Output 10BO1/10BO2 L L L H L H Table 8. PROCHOT signals H = HIGH voltage level; L = LOW voltage level. Input 5BI/6BI L H H [1] Input/output 5A/6A (open-drain) L L[2] H Output 7BO1/7BO2 H[1] L H The enable on 7BO1/7BO2 includes a delay that prevents the transient condition where 5BI/6BI go from LOW to HIGH, and the LOW to HIGH on 5A/6A lags up to 100 ns from causing a low glitch on the 7BO1/7BO2 outputs. Open-drain input/output terminal is driven to logic LOW state by other driver. [2] Table 9. NMI signals H = HIGH voltage level; L = LOW voltage level; X = Don’t care. Inputs 11BI L L H X X [1] Input/output EN2 H H H L L 11A (open-drain) H L[1] L H L[1] Output 11BO L H H L H Open-drain input/output terminal is driven to logic LOW state by other driver. GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 6 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 8. Application design-in information VTT 1.5 kΩ to 1.2 kΩ 56 Ω R 56 Ω VTT VCC 1.5 kΩ 2R PLATFORM HEALTH MANAGEMENT CPU1 1ERR_L CPU1 THRMTRIP L CPU1 PROCHOT L CPU2 PROCHOT L VCC VREF 1AO 2AO 5A 6A EN1 11B1 VCC 1BI 2BI 7BO1 7BO2 EN2 11B0 CPU1 IERR_L THRMTRIP L FORCEPR_L PROCHOT L NMI CPU1 DISABLE_L FORCEPR_L PROCHOT L IERR_L THRMTRIP L NMI CPU2 DISABLE_L CPU2 GTL2008 NMI_L 11A 9BI CPU2 1ERR_L CPU2 THRMTRIP L CPU1 SMI L CPU2 SMI L SMI_BUFF_L (1) 5BI 6BI 3BI 4BI 10BO1 10BO2 9AO 3AO 4AO 10AI1 10AI2 GND SOUTHBRIDGE NMI SOUTHBRIDGE SMI_L power supply POWER GOOD 002aab970 (1) If 9AO needs to be HIGH before EN2 goes HIGH, a pull-up resistor is required because it is high-impedance until EN2 goes HIGH. All other outputs, both GTL and LVTTL, require pull-up resistors because they are open-drain. Fig 3. Typical application GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 7 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 9. Limiting values Table 10. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC IIK VI IOK VO IOL IOH Tstg Tj(max) [1] [2] [3] [4] Parameter supply voltage input clamping current input voltage output clamping current output voltage LOW-level output current[2] Conditions VI < 0 V A port (LVTTL) B port (GTL) VO < 0 V output in OFF or HIGH state; A port output in OFF or HIGH state; B port A port B port A port [4] Min −0.5 −0.5[1] −0.5[1] −0.5[1] −0.5[1] −60 - Max +4.6 −50 +4.6 +4.6 −50 +4.6 +4.6 32 30 −32 +150 +125 Unit V mA V V mA V V mA mA mA °C °C HIGH-level output current[3] storage temperature maximum junction temperature The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. Current into any output in the LOW state. Current into any output in the HIGH state. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C. 10. Recommended operating conditions Table 11. Symbol VCC VTT Vref VI VIH VIL IOH IOL Tamb Operating conditions Parameter supply voltage termination voltage reference voltage input voltage HIGH-level input voltage LOW-level input voltage HIGH-level output current LOW-level output current ambient temperature GTL GTL A port B port A port and ENn B port A port and ENn B port A port A port B port operating in free-air Conditions Min 3.0 0.64 0 0 2 Vref + 0.050 −40 Typ 3.3 1.2 0.8 3.3 VTT Max 3.6 1.1 3.6 3.6 0.8 Vref − 0.050 −16 16 15 +85 Unit V V V V V V V V V mA mA mA °C GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 8 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 11. Static characteristics Table 12. Static characteristics Recommended operating conditions; voltages are referenced to GND (ground = 0 V). Tamb = −40 °C to +85 °C Symbol VOH VOL Parameter HIGH-level output voltage LOW-level output voltage Conditions 9AO; VCC = 3.0 V to 3.6 V; IOH = −100 μA 9AO; VCC = 3.0 V; IOH = −16 mA A port; VCC = 3.0 V; IOL = 4 mA A port; VCC = 3.0 V; IOL = 8 mA A port; VCC = 3.0 V; IOL = 16 mA B port; VCC = 3.0 V; IOL = 15 mA IOH II HIGH-level output current input current open-drain outputs; A port other than 9AO; VO = VCC; VCC = 3.6 V A port; VCC = 3.6 V; VI = VCC A port; VCC = 3.6 V; VI = 0 V B port; VCC = 3.6 V; VI = VTT or GND ICC ΔICC[3] Cio supply current additional supply current input/output capacitance A or B port; VCC = 3.6 V; VI = VCC or GND; IO = 0 mA per input; A port or control inputs; VCC = 3.6 V; VI = VCC − 0.6 V A port; VO = 3.0 V or 0 V B port; VO = VTT or 0 V [2] [2] [2] [2] [2] [2] Min VCC − 0.2 2.1 - Typ[1] 3.0 2.3 0.15 0.3 0.6 0.13 8 2.5 1.5 Max 0.4 0.55 0.8 0.4 ±1 ±1 ±1 ±1 12 500 3.5 2.5 Unit V V V V V V μA μA μA μA mA μA pF pF [1] [2] [3] All typical values are measured at VCC = 3.3 V and Tamb = 25 °C. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. This is the increase in supply current for each input that is at the specified LVTTL voltage level rather than VCC or GND. GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 9 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 12. Dynamic characteristics Table 13. Dynamic characteristics VCC = 3.3 V ± 0.3 V Symbol Parameter Vref = 0.73 V; VTT = 1.1 V tPLH LOW to HIGH propagation delay nA to nBI; see Figure 4 9BI to 9AO; see Figure 5 nBI to nA or nAO (open-drain outputs); see Figure 14 9BI to 10BOn 11A to 11BO; see Figure 10 11BI to 11A; see Figure 9 11BI to 11BO 5BI to 7BO1 or 6BI to 7BO2; see Figure 7 tPHL HIGH to LOW propagation delay nA to nBI; see Figure 4 9BI to 9AO; see Figure 5 nBI to nA or nAO (open-drain outputs); see Figure 14 9BI to 10BOn 11A to 11BO; see Figure 10 11BI to 11A; see Figure 9 11BI to 11BO 5BI to 7BO1 or 6BI to 7BO2; see Figure 7 tPLZ LOW to OFF-state propagation delay EN1 to nAO or EN2 to nAO; see Figure 8 EN1 to 5A (I/O) or EN2 to 6A (I/O); see Figure 8 tPZL OFF-state to LOW propagation delay EN1 to nAO or EN2 to nAO; see Figure 8 EN1 to 5A (I/O) or EN2 to 6A (I/O); see Figure 8 tPHZ tPZH HIGH to OFF-state propagation delay OFF-state to HIGH propagation delay EN2 to 9AO; see Figure 11 EN2 to 9AO; see Figure 11 [2] Conditions Min 1 2 2 2 1 2 2 4 2 2 2 2 1 2 2 100 1 1 2 2 2 1 Typ[1] 4 5.5 13 6 4 7.5 8 7 5.5 5.5 4 6 5.5 8.5 14 205 3 3 7 7 5 4 Max 8 10 18 11 8 11 13 12 10 10 10 11 10 13 21 350 10 7 10 10 10 10 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 10 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs Table 13. Dynamic characteristics …continued VCC = 3.3 V ± 0.3 V Symbol Parameter Vref = 0.76 V; VTT = 1.2 V tPLH LOW to HIGH propagation delay nA to nBI; see Figure 4 9BI to 9AO; see Figure 5 nBI to nA or nAO (open-drain outputs); see Figure 14 9BI to 10BOn 11A to 11BO; see Figure 10 11BI to 11A; see Figure 9 11BI to 11BO 5BI to 7BO1 or 6BI to 7BO2; see Figure 7 tPHL HIGH to LOW propagation delay nA to nBI; see Figure 4 9BI to 9AO; see Figure 5 nBI to nA or nAO (open-drain outputs); see Figure 14 9BI to 10BOn 11A to 11BO; see Figure 10 11BI to 11A; see Figure 9 11BI to 11BO 5BI to 7BO1 or 6BI to 7BO2; see Figure 7 tPLZ LOW to OFF-state propagation delay EN1 to nAO or EN2 to nAO; see Figure 8 EN1 to 5A (I/O) or EN2 to 6A (I/O); see Figure 8 tPZL OFF-state to LOW propagation delay EN1 to nAO or EN2 to nAO; see Figure 8 EN1 to 5A (I/O) or EN2 to 6A (I/O); see Figure 8 tPHZ tPZH HIGH to OFF-state propagation delay OFF-state to HIGH propagation delay EN2 to 9AO; see Figure 11 EN2 to 9AO; see Figure 11 [2] Conditions Min 1 2 2 2 1 2 2 4 2 2 2 2 1 2 2 100 1 1 2 2 2 2 Typ[1] 4 5.5 13 6 4 7.5 8 7 5.5 5.5 4 6 5.5 8.5 14 205 3 3 7 7 5 4 Max 8 10 18 11 8 11 13 12 10 10 10 11 10 13 21 350 10 7 10 10 10 10 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns [1] [2] All typical values are at VCC = 3.3 V and Tamb = 25 °C. Includes ~7.6 ns RC rise time of test load pull-up on 11A, 1.5 kΩ pull-up and 21 pF load on 11A has about 23 ns RC rise time. GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 11 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 12.1 Waveforms VM = 1.5 V at VCC ≥ 3.0 V for A ports; VM = Vref for B ports. 3.0 V input 1.5 V tPLH VOH VM VM 0V 002aaa999 002aab000 1.5 V 0V tPHL VTT Vref Vref VOL tp output VM = 1.5 V for A port and Vref for B port A port to B port a. Pulse duration Fig 4. Voltage waveforms b. Propagation delay times VTT input Vref tPLH output 1.5 V Vref 1/ V 3 TT VTT input Vref tPZL Vref tPLZ 1/ V 3 TT tPHL VOH 1.5 V VOL 002aab001 VCC output 1.5 V VOL + 0.3 V 002aab002 PRR ≤ 10 MHz; Zo = 50 Ω; tr ≤ 2.5 ns; tf ≤ 2.5 ns Fig 5. Propagation delay, 9BI to 9AO Fig 6. nBI to nA (I/O) or nBI to nAO open-drain outputs 3.0 V input 1.5 V tPLZ 1.5 V 0V tPZL VOH output VOL + 0.3 V 1.5 V VOL 002aab005 VTT input Vref tPLH Vref tPHL 1/ V 3 TT VTT output Vref Vref VOL 002aac195 Fig 7. 5BI to 7BO1 or 6BI to 7BO2 Fig 8. EN1 to 5A (I/O) or EN2 to 6A (I/O) or EN1 to nAO or EN2 to nAO GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 12 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs VTT input Vref tPLZ Vref 0V tPZL VOH output VOL + 0.3 V 1.5 V VOL 002aac196 002aac197 3.0 V input 1.5 V tPLH output Vref 1.5 V 0V tPHL VTT Vref VOL Fig 9. 11BI to 11A Fig 10. 11A to 11BO 3.0 V input 1.5 V tPHZ 1.5 V 0V tPZH VOH output VOL + 0.3 V 1.5 V VOL 002aab980 Fig 11. EN2 to 9AO GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 13 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 13. Test information VCC PULSE GENERATOR VI DUT RT CL 50 pF RL 500 Ω VO 002aab981 Fig 12. Load circuit for A outputs (9AO) VTT VCC PULSE GENERATOR VI DUT RT CL 30 pF 50 Ω VO 002aab264 Fig 13. Load circuit for B outputs VCC VCC PULSE GENERATOR VI DUT RT CL 21 pF RL 1.5 kΩ VO 002aab265 Fig 14. Load circuit for open-drain LVTTL I/O and open-drain outputs 6V VCC PULSE GENERATOR VI DUT RT CL 50 pF RL 500 Ω RL 500 Ω VO 002aab982 Fig 15. Load circuit for 9AO OFF-state to LOW and LOW to OFF-state RL — Load resistor CL — Load capacitance; includes jig and probe capacitance RT — Termination resistance; should be equal to Zo of pulse generators. GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 14 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 14. Package outline TSSOP28: plastic thin shrink small outline package; 28 leads; body width 4.4 mm SOT361-1 D E A X c y HE vMA Z 28 15 Q A2 pin 1 index A1 (A 3) A θ Lp L detail X 1 e bp 14 wM 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.05 A2 0.95 0.80 A3 0.25 bp 0.30 0.19 c 0.2 0.1 D (1) 9.8 9.6 E (2) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1 Lp 0.75 0.50 Q 0.4 0.3 v 0.2 w 0.13 y 0.1 Z (1) 0.8 0.5 θ 8 o 0 o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT361-1 REFERENCES IEC JEDEC MO-153 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Fig 16. Package outline SOT361-1 (TSSOP28) GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 15 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 15. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 15.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 15.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 15.3 Wave soldering Key characteristics in wave soldering are: • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 16 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 15.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 17) than a SnPb process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 14 and 15 Table 14. SnPb eutectic process (from J-STD-020C) Package reflow temperature (°C) Volume (mm3) < 350 < 2.5 ≥ 2.5 Table 15. 235 220 Lead-free process (from J-STD-020C) Package reflow temperature (°C) Volume (mm3) < 350 < 1.6 1.6 to 2.5 > 2.5 260 260 250 350 to 2000 260 250 245 > 2000 260 245 245 ≥ 350 220 220 Package thickness (mm) Package thickness (mm) Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 17. GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 17 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs temperature maximum peak temperature = MSL limit, damage level minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 17. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 16. Abbreviations Table 16. Acronym CDM CMOS CPU DUT ESD GTL HBM LVTTL MM PRR TTL VRD Abbreviations Description Charged Device Model Complementary Metal Oxide Semiconductor Central Processing Unit Device Under Test ElectroStatic Discharge Gunning Transceiver Logic Human Body Model Low Voltage Transistor-Transistor Logic Machine Model Pulse Rate Repetition Transistor-Transistor Logic Voltage Regulator Down GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 18 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 17. Revision history Table 17. Revision history Release date 20100219 Data sheet status Product data sheet 8th Change notice Supersedes GTL2008_3 Document ID GTL2008_4 Modifications: GTL2008_3 GTL2008_GTL2107_2 GTL2008_1 • Section 2 “Features and benefits”, bullet item: corrected from “200 V MM per JESD22-A115” to “150 V MM per JESD22-A115” Product data sheet Product data sheet Product data sheet GTL2008_GTL2107_2 GTL2008_1 - 20070201 20060926 20060502 GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 19 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 18. Legal information 18.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. © NXP B.V. 2010. All rights reserved. 18.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or GTL2008_4 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 04 — 19 February 2010 20 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 19. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com GTL2008_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 19 February 2010 21 of 22 NXP Semiconductors GTL2008 GTL translator with power good control and high-impedance outputs 20. Contents 1 2 3 4 5 6 6.1 6.2 7 7.1 8 9 10 11 12 12.1 13 14 15 15.1 15.2 15.3 15.4 16 17 18 18.1 18.2 18.3 18.4 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Function tables . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application design-in information . . . . . . . . . . 7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 Recommended operating conditions. . . . . . . . 8 Static characteristics. . . . . . . . . . . . . . . . . . . . . 9 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Test information . . . . . . . . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Soldering of SMD packages . . . . . . . . . . . . . . 16 Introduction to soldering . . . . . . . . . . . . . . . . . 16 Wave and reflow soldering . . . . . . . . . . . . . . . 16 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 16 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 17 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Contact information. . . . . . . . . . . . . . . . . . . . . 21 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 February 2010 Document identifier: GTL2008_4