KMZ10B,112

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D329 KMZ10B Magnetic field sensor Product specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1998 Mar 31 Philips Semiconductors Product specification Magnetic field sensor KMZ10B DESCRIPTION The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear position measurement, proximity detectors, etc. handbook, halfpage Hy Hx PINNING PIN SYMBOL 1 +VO output voltage 2 GND ground 3 −VO output voltage 4 VCC supply voltage 1 2 3 4 DESCRIPTION MGD806 Fig.1 Simplified outline SOT195. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC bridge supply voltage − 5 12 V Hy magnetic field strength −2 − +2 kA/m Hx auxiliary field − 3 − kA/m S sensitivity − 4 − mV ⁄ V ----------------kA ⁄ m Rbridge bridge resistance 1.6 − 2.6 kΩ Voffset offset voltage −1.5 − +1.5 mV/V CIRCUIT DIAGRAM MLC716 handbook, full pagewidth 1 2 3 4 +VO GND –VO VCC Fig.2 Simplified circuit diagram. 1998 Mar 31 2 Philips Semiconductors Product specification Magnetic field sensor KMZ10B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS UNIT 12 V − 120 mW storage temperature −65 +150 °C bridge operating temperature −40 +150 °C bridge supply voltage Ptot total power dissipation Tstg Tbridge up to Tamb = 130 °C MSA927 150 handbook, halfpage P tot (mW) 100 50 0 50 100 Tamb (o C) 150 Fig.3 Power derating curve. 1998 Mar 31 MAX. − VCC 0 MIN. 3 Philips Semiconductors Product specification Magnetic field sensor KMZ10B THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 180 K/W thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 °C; Hx = 3 kA/m; note 1. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCC bridge supply voltage − 5 − V Hy magnetic field strength −2 − +2 kA/m S sensitivity open circuit, notes 2 and 3 3.2 − 4.8 mV ⁄ V ----------------kA ⁄ m TCVO temperature coefficient of output voltage VCC = 5 V; Tj = −25 to +125 °C − −0.4 − %/K IB = 3 mA; Tj = −25 to +125 °C − −0.1 − %/K 1.6 − 2.6 kΩ Tbridge = −25 to +125 °C − 0.3 − %/K −1.5 − +1.5 mV/V Rbridge bridge resistance TCRbridge temperature coefficient of bridge resistance Voffset offset voltage TCVoffset offset voltage drift Tj = −25 to +125 °C −3 − +3 µV ⁄ V --------------K FL linearity deviation of output voltage Hy = 0 to ±1 kA/m − − ±0.5 %⋅FS Hy = 0 to ±1.6 kA/m − − ±1.7 %⋅FS Hy = 0 to ±2 kA/m − − ±2 %⋅FS FH hysteresis of output voltage − − 0.5 %⋅FS f operating frequency 0 − 1 MHz Notes 1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field Hx = 3 kA/m. 2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for decrease of sensitivity. 3. ( V O at H y = 1.6 kA ⁄ m ) – ( V O at H y = 0 ) S = ---------------------------------------------------------------------------------------------------------------. 1.6 × V CC 1998 Mar 31 4 Philips Semiconductors Product specification Magnetic field sensor KMZ10B ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, ,,,,,, MGD802 20 Hd (kA/m) Hx Hd S (H ) x S (3 kA/m) Hy 1 10 safe operating area (1) Hy > 1 kA/m (2) MGD803 2 Hy ≥ 1 kA/m 0 0 1 2 3 0 0 4 5 Hx (kA/m) 1 2 3 4 5 Hx (kA/m) In applications with Hx < 3 kA/m, the sensor has to be reset, after leaving the SOAR, by an auxiliary field of Hx = 3 kA/m. (1) Region of permissible operation. (2) Permissible extension if Hy < 1 kA/m. In applications with Hx ≤ 3 kA/m, the sensor has to be reset by an auxiliary field of Hx = 3 kA/m before using. Fig.4 Fig.5 Safe Operating Area (permissible disturbing field Hd as a component of auxiliary field Hx). MSA926 max typ min 8 Vo (mV/V) 4 0 4 8 2 1 0 1 2 H y (kA/m) VB = constant; Hx = 3 kA/m; Tamb = 25 °C; Voffset = 0. Fig.6 Sensor output characteristics. 1998 Mar 31 5 Relative sensitivity (ratio of sensitivity at certain Hx and sensitivity at Hx = 3 kA/m). Philips Semiconductors Product specification Magnetic field sensor KMZ10B PACKAGE OUTLINE Plastic single-ended flat package; 4 in-line leads SOT195 E Q b1 A chip D L1 L 1 2 3 4 e1 bp c e 0 1 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp b1 c D E e e1 L L1(1) max. Q mm 1.8 1.6 0.48 0.40 0.7 0.5 0.45 0.39 5.2 5.0 4.8 4.4 3.75 1.25 14.5 12.7 2 0.8 0.7 Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT195 1998 Mar 31 EUROPEAN PROJECTION ISSUE DATE 97-06-02 6 Philips Semiconductors Product specification Magnetic field sensor KMZ10B DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Mar 31 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115106/00/03/pp8 Date of release: 1998 Mar 31 Document order number: 9397 750 03639 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.