KMZ49,118

SO 8 KMZ49 Magnetic field sensor Rev. 1 — 31 October 2011 Product data sheet 1. Product profile 1.1 General description The KMZ49 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges, at a relative angle of 45 to each other. A rotating magnetic field in the x-y plane will produce two independent sinusoidal output signals, one a function of +cos(2) and the second a function of +sin(2),  being the angle between sensor and field direction (see Figure 2). The KMZ49 is suited to high precision angle measurement applications under low field conditions (saturation field strength 25 kA/m). The sensor can be operated at any frequency between 0 Hz and 1 MHz. 1.2 Features and benefits      Accurate and reliable angle measurement Mechanical robustness, contactless principle Wear-free operation Accuracy independent of mechanical tolerances Extended temperature range 1.3 Applications  Steering angle and torsion  Headlight adjustment  Motor positioning  Window wipers  Fuel level  Mirror positioning KMZ49 NXP Semiconductors Magnetic field sensor 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C; Hext = 25 kA/m; VCC = 5 V; unless otherwise specified. Symbol Parameter Conditions VCC supply voltage VM peak voltage [1] see Figure 2 offset voltage Voffset per supply voltage; see Figure 2 TCV(offset) offset voltage temperature coefficient Rbridge per supply voltage; Tamb = 40 C to +150 C; see Figure 2 bridge resistance Min Typ Max Unit - 5 9 V [1][2] 60 67 75 mV [1] 2 - +2 mV/V [1][3] 2 - +2 (V/V)/K [1][4] 2.7 3.2 3.7 k [1] Applicable for bridge 1 and bridge 2. [2] VM = VO(max)  Voffset. Periodicity of VM: sin(2) and cos(2), respectively. [3] V offset  at 150 C  – V offset  at – 40 C  TC V  offset  = -------------------------------------------------------------------------------------------------150 C –  – 40 C  [4] Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6. 2. Pinning information Table 2. Pinning Pin Symbol Description 1 ON1 output voltage bridge 1 2 ON2 output voltage bridge 2 3 VCC2 supply voltage bridge 2 4 VCC1 supply voltage bridge 1 5 OP1 output voltage bridge 1 6 OP2 output voltage bridge 2 7 GND2 ground 2 8 GND1 ground 1 Simplified outline 8 5 1 4 3. Ordering information Table 3. KMZ49 Product data sheet Ordering information Type number Package Name Description Version KMZ49 SO8 SOT96-1 plastic small outline package; 8 leads; body width 3.9 mm All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 13 KMZ49 NXP Semiconductors Magnetic field sensor 4. Circuit diagram KMZ49 bridge 1 bridge 2 cos R11 R13 VCC1 OP1 sin R21 R12 R14 R22 R23 GND1 ON1 OP2 R24 GND2 VO1 VOP1 V VCC2 VON2 VCC2 VO2 V VCC1 ON2 V VON1 V VOP2 V V 008aaa267 Fig 1. Device and test circuit diagram 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCC supply voltage Conditions [1] Min Max Unit - 9 V kA/m Hext external magnetic field strength 25 - Tamb ambient temperature 40 +150 C Tstg storage temperature 65 +150 C [1] Applicable for bridge 1 and bridge 2. 6. Thermal characteristics Table 5. KMZ49 Product data sheet Thermal characteristics Symbol Parameter Typ Unit Rth(j-a) thermal resistance from junction to ambient 155 K/W All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Rev. 1 — 31 October 2011 Conditions 3 of 13 KMZ49 NXP Semiconductors Magnetic field sensor 7. Characteristics Table 6. Characteristics Tamb = 25 C; Hext = 25 kA/m; VCC = 5 V; unless otherwise specified. Symbol Parameter Conditions [1] Min Typ Max Unit VCC supply voltage - 5 9 V VM peak voltage see Figure 2 [1][2] 60 67 75 mV TCVM peak voltage temperature coefficient Tamb = 40 C to +150 C [1][3] 0.3 0.36 0.42 %/K Rbridge bridge resistance [1][4] 2.7 3.2 3.7 k TCR(bridge) bridge resistance temperature coefficient Tamb = 40 C to +150 C [1][5] 0.24 0.26 0.29 %/K Voffset offset voltage per supply voltage; see Figure 2 [1] 2 - +2 mV/V TCV(offset) offset voltage temperature coefficient per supply voltage; Tamb = 40 C to +150 C; see Figure 2 [1][6] 2 - +2 (V/V)/K Vo(hys) hysteresis output voltage see Figure 3 [1][7] k amplitude synchronism TCk amplitude synchronism temperature coefficient  angular inaccuracy Tamb = 40 C to +150 C 0 0.05 0.18 %FS [8] 99.5 100 100.5 % [9] 0.01 0 +0.01 %/K 0 0.05 0.1 deg [10] [1] Applicable for bridge 1 and bridge 2. [2] VM = VO(max)  Voffset. Periodicity of VM: sin(2) and cos(2), respectively. [3] V M  at 150 C  – V M  at – 40 C  TCVM = --------------------------------------------------------------------------------------------V M  at 25 C    150 C –  – 40 C   [4] Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6. [5] R bridge  at 150 C  – R bridge  at – 40 C  TCR  bridge  = ------------------------------------------------------------------------------------------------------R bridge  at 25 C    150 C –  – 40 C   [6] V offset  at 150 C  – V offset  at – 40 C  TCV  offset  = -------------------------------------------------------------------------------------------------150 C –  – 40 C  [7] V O1  67.5 135  45  – V O1  67.5 45  135  V o  hys 1 = --------------------------------------------------------------------------------------------------------------------------2  V M1 V O2  22.5 90  0  – V O2  22.5 0  90  V o  hys 2 = --------------------------------------------------------------------------------------------------------------2  V M2 [8] V M1 k = ---------V M2 [9] k  at 150 C  – k  at – 40 C  TCk = ---------------------------------------------------------------------------------------k  at 25 C    150 C –  – 40 C   [10]  =  real –  meas ; Voffset = 0 V; inaccuracy of angular measurement due to deviations from ideal sinusoidal characteristics, calculated from the third and fifth harmonics of the spectrum VO. For definition of  see Figure 2. KMZ49 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 4 of 13 KMZ49 NXP Semiconductors Magnetic field sensor VO (mV) α = 0° VO2 direction of magnetic field α VM2 Voffset2 ON1 GND1 ON2 GND2 0 VCC2 OP2 VCC1 OP1 VO1 0 90 180 270 α (deg) 360 008aaa269 Fig 2. Output signals related to the direction of the magnetic field 008aaa266 VO (mV) Vo(hys)2 VO1 0 VO2 Vo(hys)1 0 Fig 3. KMZ49 Product data sheet 45 90 α (deg) 135 Definition of hysteresis All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 5 of 13 KMZ49 NXP Semiconductors Magnetic field sensor 8. ElectroStatic Discharge (ESD) 8.1 Human body model The KMZ49 withstands 1 kV, according to the human body model at 100 pF and 1.5 k. The test is according to AEC-Q101, method 001. 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. KMZ49 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 6 of 13 KMZ49 NXP Semiconductors Magnetic field sensor 10. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 inches 0.010 0.057 0.069 0.004 0.049 0.05 0.244 0.039 0.028 0.041 0.228 0.016 0.024 0.01 0.01 0.028 0.004 0.012 θ 8o o 0 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. Fig 4. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 Package outline SOT96-1 (SO8) KMZ49 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 7 of 13 KMZ49 NXP Semiconductors Magnetic field sensor 11. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 11.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 11.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 11.3 Wave soldering Key characteristics in wave soldering are: • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities KMZ49 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 8 of 13 KMZ49 NXP Semiconductors Magnetic field sensor 11.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 5) than a SnPb process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 7 and 8 Table 7. SnPb eutectic process (from J-STD-020C) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350  350 < 2.5 235 220  2.5 220 220 Table 8. Lead-free process (from J-STD-020C) Package thickness (mm) Package reflow temperature (C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 5. KMZ49 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 9 of 13 KMZ49 NXP Semiconductors Magnetic field sensor temperature maximum peak temperature = MSL limit, damage level minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 5. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes KMZ49 v.1 20111031 Product data sheet - - KMZ49 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 10 of 13 KMZ49 NXP Semiconductors Magnetic field sensor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, KMZ49 Product data sheet authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 11 of 13 KMZ49 NXP Semiconductors Magnetic field sensor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com KMZ49 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 31 October 2011 © NXP B.V. 2011. All rights reserved. 12 of 13 KMZ49 NXP Semiconductors Magnetic field sensor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 9.1 10 11 11.1 11.2 11.3 11.4 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 ElectroStatic Discharge (ESD) . . . . . . . . . . . . . 6 Human body model . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Soldering of SMD packages . . . . . . . . . . . . . . . 8 Introduction to soldering . . . . . . . . . . . . . . . . . . 8 Wave and reflow soldering . . . . . . . . . . . . . . . . 8 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . . 8 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 31 October 2011 Document identifier: KMZ49