LTE3401HX

LTE3401H XS ON 6 SiGe:C low-noise amplifier MMIC with bypass switch for LTE 1 Rev. 3 — 28 June 2019 Product data sheet General description The LTE3401H is a high-gain Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin thin leadless package. The LTE3401H delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in frequency division duplex (FDD) systems. When receive signal strength is sufficient, the LTE3401H can be switched off to operate in bypass mode at increased IP3i level and a 1 μA supply current, to lower power consumption. The LTE3401H is internally AC coupled and requires only one external matching inductor. The LTE3401H is optimized for 1710 MHz to 2690 MHz, but supports 1452 MHz - 1710 MHz as well. 2 Features and benefits • • • • • • • • • • • • • • • • • • • Operating frequency from 1452 MHz to 2690 MHz Noise figure = 0.65 dB Gain 19.5 dB High input 1 dB compression point of -10.5 dBm High in band IP3i of +2 dBm Bypass switch insertion loss of 2.7 dB Supply voltage 1.5 V to 3.1 V Integrated RF supply decoupling capacitor Optimized performance at a supply current of 13.4 mA Bypass mode current consumption < 1 μA Integrated temperature stabilized bias for easy design Requires only one input matching inductor Input and Output AC coupled through DC blocking capacitors Integrated matching for the output ESD protection on all pins Low bill of materials (BOM) 6 pins leadless package: 1.1 mm x 0.7 mm x 0.37 mm: 0.40 mm pitch 180 GHz transit frequency - SiGe:C technology Moisture sensitivity Level 1 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 3 Applications • • • • LTE3401H Product data sheet LNA for LTE reception in smart phones feature phones tablet PCs RF front-end modules All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 2 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 4 Quick reference data Table 1. Quick reference data f = 2140 MHz; VCC = 2.8 V; VI(CTRL) > 0.8 V; Tamb = 25 °C. Input matched to 50 Ω using application diagram from Figure 3 and component values as in Table 10. Unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICC supply current in gain mode - 13.4 16.8 mA in bypass mode - - 1 µA in gain mode - 19.5 - dB - -2.7 - dB - 0.65 - dB - -10.5 - dBm - +2.0 dBm Gp power gain in bypass mode [1] NF noise figure Pi(1 dB) input power at 1 dB gain compression IP3i input third-order intercept point [1] Δf = 1 MHz - PCB losses are subtracted. 5 Ordering information Table 2. Ordering information Type number Orderable Package part number Name LTE3401H LTE3401HX 6 XSON6 Description Version plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm SOT1232 Marking Table 3. Marking code Type number Marking code LTE3401H W LTE3401H Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 3 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 7 Functional diagram VCC 2 CTRL RF_IN 6 BIAS/CONTROL 5 3 RF_OUT 1, 4 aaa-018718 Figure 1. Functional diagram LTE3401H Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 4 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 8 Pinning information 8.1 Pinning GND 4 3 RF_OUT RF_IN 5 2 VCC CTRL 6 1 GND Transparent top view aaa-022134 Figure 2. Pin configuration 8.2 Pin description Table 4. Pinning Symbol Pin Description GND 1 RF ground VCC 2 supply voltage RF_OUT 3 RF out GND 4 RF ground RF_IN 5 RF in CTRL 6 gain control, switch between gain and bypass mode LTE3401H Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 5 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 9 Limiting values Table 5. Limiting values In accordance with the absolute maximum rating system (IEC 60134). See section 18.3 "Disclaimers", paragraph "Limiting values". Symbol Parameter VCC supply voltage VI(CTRL) input voltage on pin CTRL Conditions Unit -0.5 +5.0 V -0.5 +5.0 V DC [1] -0.5 +0.6 V VI(RF_OUT) input voltage on pin RF_OUT DC, VI(RF_OUT) < VCC + 0.6 V [1] -0.5 +5.0 V Pi RF - 26 dBm - 23 dBm RF gain mode, at VCC = 1.8 V - 12 dBm RF bypass mode, at VCC = 1.8 V - 10 dBm -65 +150 °C - 150 °C - ±2 kV - ±1 kV VI(RF_IN) VI(CTRL) < VCC + 0.6 V Min Max input voltage on pin RF_IN input power [2] RF Po output power Tstg storage temperature Tj junction temperature VESD electrostatic discharge voltage human body model (HBM) according to ANSI/ ESDA/JEDEC standard JS-001 [3] charged device model (CDM) according to ANSI/ESDA/JEDEC standard JS-002 [1] [2] [3] The RF input and output are AC coupled through internal DC Blocking capacitors. f = 2140 MHz; 200 Hrs at Tamb = 100 °C. HBM ESD protection level is according to JS-001 classification 2 (2000 V to < 4000 V). 10 Operating conditions Table 6. Operating conditions Symbol Parameter VCC Conditions Min Typ Max Unit supply voltage 1.5 - 3.1 V Tamb ambient temperature -40 25 85 °C VI(CTRL) input voltage on pin CTRL bypass mode - - 0.25 V gain mode 0.8 - - V 11 Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Rth(j-sp) junction to solder point thermal resistance LTE3401H Product data sheet Conditions All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 Typ Unit 225 K/W © NXP B.V. 2019. All rights reserved. 6 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 12 Characteristics Table 8. Characteristics 1452 MHz ≤ f ≤ 2690 MHz; VCC =1.8 V; Tamb = 25 °C; input matched 50 Ω using application diagram from Figure 3 and component values as in Table 10. Unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gain mode specifications by frequency point ICC supply current VI(CTRL) > 0.8 V - 12.7 15.8 mA Gp power gain f = 1452 MHz - 21.0 - dB f = 1710 MHz - 20.5 - dB f = 2140 MHz - 19.0 - dB f = 2690 MHz - 17.0 - dB ΔGp power gain variation using input matching inductor 2.7 nH ΔG/ΔT gain variation with temperature NF noise figure Pi(1dB) IP3i RLin input power at 1 dB gain compression input third-order intercept point input return loss LTE3401H Product data sheet f = 1800 MHz - 2690 MHz [1] - +/-2.25 - dB f = 1800 MHz - 2200 MHz [1] - +/-1.75 - dB f = 2300 MHz - 2690 MHz [1] - +/-1.75 - dB - -0.015 - dB/°C f = 1452 MHz [2] - 0.55 - dB f = 1710 MHz [2] - 0.55 - dB f = 2140 MHz [2] - 0.65 - dB f = 2690 MHz [2] - 0.75 - dB f = 1452 MHz - -16.5 - dBm f = 1710 MHz - -15.5 - dBm f = 2140 MHz - -13.5 - dBm f = 2690 MHz - -10.5 - dBm f = 1452 MHz, Δf = 1 MHz - -5 - dBm f = 1710 MHz, Δf = 1 MHz - -2 - dBm f = 2140 MHz, Δf = 1 MHz - 0 - dBm f = 2690 MHz, Δf = 1 MHz - +2.5 - dBm f = 1452 MHz - 8 - dB f = 1710 MHz - 8 - dB f = 2140 MHz - 10 - dB f = 2690 MHz - 12 - dB All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 7 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE Symbol Parameter Conditions Min Typ Max Unit RLout output return loss f = 1452 MHz - 10 - dB f = 1710 MHz - 10 - dB f = 2140 MHz - 14 - dB f = 2690 MHz - 9 - dB f = 1452 MHz - 34 - dB f = 1710 MHz - 32 - dB f = 2140 MHz - 30 - dB f = 2690 MHz - 30 - dB 1 - - ISL isolation K Rollett stability factor ton turn-on time time from VI(CTRL) ON, to 90 % of the gain - - 1 µs toff turn-off time time from VI(CTRL) OFF, to 10 % of the gain - - 1 µs Bypass mode specifications by frequency point ICC supply current VI(CTRL) < 0.25 V - - 1.0 μA Gp power gain f = 1452 MHz - -1.8 - dB f = 1710 MHz - -2.5 - dB f = 2140 MHz - -2.7 - dB f = 2690 MHz - -3.0 - dB f = 1452 MHz - 15 - dB f = 1710 MHz - 12 - dB f = 2140 MHz - 13 - dB f = 2690 MHz - 12 - dB f = 1452 MHz - 14 - dB f = 1710 MHz - 8 - dB f = 2140 MHz - 10 - dB f = 2690 MHz - 15 - dB RLin RLout input return loss output return loss Gain mode specifications for wideband frequency range Gp NF power gain noise figure LTE3401H Product data sheet f = 1800 MHz - 2690 MHz [1] 14.7 18 21.7 dB f = 1800 MHz - 2200 MHz [1] 16.7 18 21.7 dB f = 2300 MHz - 2690 MHz [1] 14.7 18 20.5 dB f = 1800 MHz - 2690 MHz [1] - 0.8 1.3 dB f = 1800 MHz - 2200 MHz [1] - 0.8 1.3 dB f = 2300 MHz - 2690 MHz [1] - 0.8 1.3 dB All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 8 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE Symbol Parameter Conditions Pi(1dB) input power at 1 dB gain compression f = 1800 MHz - 2690 MHz IP3i input third-order intercept point VSWRi input voltage standing wave ratio Min Typ Max Unit [1] -18 -13 - dBm f = 1800 MHz - 2200 MHz [1] -17 -12 - dBm f = 2300 MHz - 2690 MHz [1] -18 -13 - dBm f = 1800 MHz - 2690 MHz [1] -5 0 - dBm f = 1800 MHz - 2200 MHz [1] -5 0 - dBm f = 2300 MHz - 2690 MHz [1] -2 3 - dBm f = 1800 MHz - 2690 MHz [1] - - 4 - - - 4 - VSWRo output voltage standing wave ratio f = 1800 MHz - 2690 MHz [1] ISL isolation f = 1800 MHz - 2690 MHz [1] 25 - - dB f = 1800 MHz - 2690 MHz [1] -8 - +8 deg Δφ [1] [2] phase variation Guaranteed by device design; not tested in production. PCB losses are subtracted. LTE3401H Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 9 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE Table 9. Characteristics 1452 MHz ≤ f ≤ 2690 MHz; VCC = 2.8 V; Tamb = 25 °C; input matched 50 Ω using application diagram from Figure 3 and component values as in Table 10. Unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gain mode specifications by frequency point ICC supply current VI(CTRL) > 0.8 V - 13.4 16.8 mA Gp power gain f = 1452 MHz - 21.5 - dB f = 1710 MHz - 21.0 - dB f = 2140 MHz - 19.5 - dB f = 2690 MHz - 17.5 - dB ΔG/ΔT NF Pi(1dB) IP3i RLin RLout ISL K gain variation with temperature noise figure input power at 1 dB gain compression input third-order intercept point input return loss output return loss isolation - -0.015 - dB/°C f = 1452 MHz [1] - 0.55 - dB f = 1710 MHz [1] - 0.55 - dB f = 2140 MHz [1] - 0.65 - dB f = 2690 MHz [1] - 0.75 - dB f = 1452 MHz - -13.5 - dBm f = 1710 MHz - -12.5 - dBm f = 2140 MHz - -10.5 - dBm f = 2690 MHz - -7.5 - dBm f = 1452 MHz, Δf = 1 MHz - -3 - dBm f = 1710 MHz, Δf = 1 MHz - 0 - dBm f = 2140 MHz, Δf = 1 MHz - 2 - dBm f = 2690 MHz, Δf = 1 MHz - 4.5 - dBm f = 1452 MHz - 9 - dB f = 1710 MHz - 9 - dB f = 2140 MHz - 11 - dB f = 2690 MHz - 12 - dB f = 1452 MHz - 10 - dB f = 1710 MHz - 10 - dB f = 2140 MHz - 14 - dB f = 2690 MHz - 9 - dB f = 1452 MHz - 34 - dB f = 1710 MHz - 32 - dB f = 2140 MHz - 30 - dB f = 2690 MHz - 30 - dB 1 - - Rollett stability factor LTE3401H Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 10 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE Symbol Parameter Conditions Min Typ Max Unit ton turn-on time time from VI(CTRL) ON, to 90 % of the gain - - 1 μs toff turn-off time time from VI(CTRL) OFF, to 10 % of the gain - - 1 µs Bypass mode specifications by frequency point ICC supply current VI(CTRL) < 0.25 V - - 1.0 μA Gp power gain f = 1452 MHz - -1.8 - dB f = 1710 MHz - -2.5 - dB f = 2140 MHz - -2.7 - dB f = 2690 MHz - -3.0 - dB f = 1452 MHz - 15 - dB f = 1710 MHz - 12 - dB f = 2140 MHz - 13 - dB f = 2690 MHz - 12 - dB f = 1452 MHz - 14 - dB f = 1710 MHz - 8 - dB f = 2140 MHz - 10 - dB f = 2690 MHz - 15 - dB RLin RLout [1] input return loss output return loss PCB losses are subtracted. LTE3401H Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 11 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 13 Application information 13.1 LTE LNA Vcc VCTRL RFin L1 6 5 IC1 1 23 C1 L2 RFout 4 aaa-028567 Figure 3. Schematics LTE LNA evaluation board Table 10. List of components For schematics, see Figure 3. Component Description Value Remarks C1 decoupling capacitor 1 μF The total capacitance on the VCC node must be at least 1 μF. It must be positioned at a short distance from the VCC pin (preferably within 15 mm). Typically, such capacitance is already present at the output of the VCC voltage regulator. IC1 LTE3401H L1 high-quality matching inductor L2 LTE3401H Product data sheet NXP output matching inductor 8.2 nH 1452 - 1560 MHz Murata LQW15A 5.6 nH 1710 - 1800 MHz Murata LQW15A 4.3 nH 1800 - 2200 MHz Murata LQW15A 2.7 nH 1770 - 2690 MHz Murata LQW15A 2.2 nH 2300 - 2690 MHz Murata LQW15A 4.7 nH 1452-1560 MHz Murata LQG10A no mount 1710-1800 MHz no mount 1800-2200 MHz no mount 1770-2690 MHz no mount 2300-2690 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 12 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 14 Package outline XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm (6×) A D SOT1232 e 3 4 e1 E v e1 1 pin 1 index area pin 1 index area A1 B y 6 v y1 C A A B A B b (6×) L (6×) C (4×) 0 1 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 D E min 0.34 0.65 1.05 nom 0.37 0.70 1.10 max 0.40 0.04 0.75 1.15 e1 e b 0.4 0.4 L 0.17 0.17 0.20 0.20 0.25 0.25 V Y Y1 0.1 0.05 0.1 Note 1. Dimension A is including plating thickness. Outline version sot1232_po References IEC JEDEC JEITA European projection Issue date 13-04-12 13-11-08 SOT1232 Figure 4. Package outline SOT1232 (XSON6) LTE3401H Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 13 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 15 Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 16 Abbreviations Table 11. Abbreviations Acronym Description ESD electrostatic discharge HBM human body model MMIC monolithic microwave-integrated circuit MSL moisture sensitivity level MUF molded underfill LTE long-term evolution PCB printed-circuit board SiGe:C silicon germanium carbon 17 Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes LTE3401H v.3 20190628 Product data sheet - LTE3401H v.2.3 modification added chapter with Gain mode specifications for wideband frequency range to Table 8 1.8 V LTE3401H v.2.3 20190430 modification • added application information for extra frequency range • added output power values to the Limiting values table • added power gain variation values when using the matching inductor of 2.7 nH LTE3401H v.2.2 20181218 modification added extra column for Orderable part number to Ordering information table, to prevent confusion LTE3401H v.2.1 20181023 modification added orderable part number to Ordering information table LTE3401H v.2 20180810 modification data sheet changed from company confidential to public LTE3401H v.1 20172811 LTE3401H Product data sheet Product data sheet Product data sheet Product data sheet Product data sheet Product data sheet - - All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 LTE3401H v.2.2 LTE3401H v.2.1 LTE3401H v.2 LTE3401H v.1 - © NXP B.V. 2019. All rights reserved. 14 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE 18 Legal information 18.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. This document supersedes and replaces all information supplied prior to the publication hereof. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 18.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without LTE3401H Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 15 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive LTE3401H Product data sheet applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2019 © NXP B.V. 2019. All rights reserved. 16 / 17 LTE3401H NXP Semiconductors SiGe:C low-noise amplifier MMIC with bypass switch for LTE Contents 1 2 3 4 5 6 7 8 8.1 8.2 9 10 11 12 13 13.1 14 15 16 17 18 General description ............................................ 1 Features and benefits .........................................1 Applications .........................................................2 Quick reference data .......................................... 3 Ordering information .......................................... 3 Marking .................................................................3 Functional diagram ............................................. 4 Pinning information ............................................ 5 Pinning ............................................................... 5 Pin description ................................................... 5 Limiting values .................................................... 6 Operating conditions .......................................... 6 Thermal characteristics ......................................6 Characteristics .................................................... 7 Application information .................................... 12 LTE LNA .......................................................... 12 Package outline .................................................13 Handling information ........................................ 14 Abbreviations .................................................... 14 Revision history ................................................ 14 Legal information .............................................. 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2019. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 June 2019 Document identifier: LTE3401H Document number: