MBC13916NT1

Freescale Semiconductor Technical Data Document Number: MBC13916/D Rev. 2.2, 05/2006 MBC13916 (Scale 2:1) Package Information Plastic Package Case 1404 (SOT-343R) MBC13916 General Purpose SiGe:C RF Cascode Low Noise Amplifier Ordering Information Device MBC13916T11 MBC13916NT1 1 1 Introduction The MBC13916 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. It is intended to be a replacement for the MRFIC0916 and is housed in the smaller SOT-343R surface mount package. As with the MRFIC0916, this device is designed for general purpose RF applications, yet has improved high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility. • Usable frequency range = 100 to 2500 MHz • 19 dB typical gain at 900 MHz, VCC = 2.7 V • NFmin (device level) = 0.9 dB @ 900 MHz • NFmin (device level) = 1.9 dB @ 1.9 GHz • 2.5 dBm typical output power at 1.0 dB gain compression at 900 MHz, VCC = 2.7 V • 45 dB typical reverse isolation (device level) at 900 MHz, VCC = 2.7 V • 4.7 mA typical bias current at VCC = 2.7 V • 2.7 to 5.0 V supply 1 Device Marking or Operating Temperature Range Package 916 SOT-343R 16N SOT-343R Refer to Table 1. Contents 1 2 3 4 5 6 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering Information . . . . . . . . . . . . . . . . . . . 2 Electrical Characteristics . . . . . . . . . . . . . . . 2 Noise Parameters . . . . . . . . . . . . . . . . . . . . . 12 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Product Documentation . . . . . . . . . . . . . . . . 14 Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. © Freescale Semiconductor, Inc., 2005, 2006. All rights reserved. Ordering Information • • • • Industry standard SOT-343R package Device weight = 0.00642 g (typical) Available only in tape and reel packaging Available only in a lead free version (device number MBC13916NT1) (Refer to Table 1.) Gnd 1 3 RF Out RF In 2 4 Gnd (SOT-343R package) Figure 1. Functional Block Diagram 2 Ordering Information Table 1 provides additional details on MBC13916 orderable parts. Table 1. Orderable Parts Details Operating Temp Range (TA.) Package Lead Frame RoHS Compliant PB-Free MSL Level Solder Temp MBC13916T1 -40° to 85° C Tape and Reel Pb Plate - No - - MBC13916NT1 -40° to 85° C Tape and Reel Pb Free Yes Yes 1 260° C Device 3 Electrical Characteristics Table 2. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit RF Frequency fRF 100 - 2500 MHz Supply Voltage VCC 2.7 - 5.0 Vdc Table 3. Maximum Ratings Ratings Symbol Value Unit Supply Voltage VCC 6.0 Vdc RF Input Power PRF 10 dBm MBC13916 Technical Data, Rev. 2.2 2 Freescale Semiconductor Electrical Characteristics Table 3. Maximum Ratings Ratings Symbol Value Unit Power Dissipation PDIS 100 mW Supply Current ICC 20 mA Thermal Resistance, Junction to Case RθJC 400 °C/W Storage Temperature Range Tstg -65 to 150 °C Note: Maximum Ratings and ESD 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤550 V and Machine Model (MM) ≤50 V. Additional ESD data available upon request. Table 4. Device Level Characteristics (VCC = 2.7 V, TA = 25° C, measured in S-parameter test fixture, unless otherwise noted.) Characteristic Symbol Min Typ Max - 16.5 10 - |S21|2 Insertion Gain f = 900 MHz f = 1900 MHz Maximum Stable Gain and/or Maximum Available Gain [Note 1] f = 900 MHz f = 1900 MHz dB MSG, MAG Minimum Noise Figure [Note 2] f = 900 MHz f = 1900 MHz NFmin Output Third Order Intercept Point [Note 3] f = 900 MHz f = 1900 MHz OIP3 Reverse Isolation f = 900 MHz f = 1900 MHz |S12|2 Unit dB - 24.5 14.3 - - 0.9 1.9 - - 13 9 - - -45 -31 - dB dBm dB Note: 1. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: S 21 S 21 2 , if K < 1 MAG = ---------- ⎛ K ± K – 1⎞ , if K > 1, MSG = ---------⎠ S 12 ⎝ S 12 2. Device matched for best noise figure. 3. Zout matched for optimum IP3. MBC13916 Technical Data, Rev. 2.2 Freescale Semiconductor 3 Electrical Characteristics 15 40 Pout, OUTPUT POWER (dBm) 30 VCC = 5.0 V 25 3.9 V 20 15 10 3.3 V 5.0 0 2.7 V 0 0.5 1.0 1.5 2.0 2.5 VCC = 5.0 V 10 3.9 V 2.7 V 5.0 3.3 V 0 -5.0 f = 900 MHz -10 -15 -30 3.0 -25 -20 f, FREQUENCY (GHz) Figure 2. GUmax versus Frequency ICC, SUPPLY CURRENT (mA) Pout, OUTPUT POWER (dBm) f = 1900 MHz VCC = 5.0 V 3.9 V 0 2.7 V -5.0 3.3 V -10 -15 -25 -20 -15 -10 -5.0 12 10 8.0 6.0 3.9 V 3.3 V 2.7 V 4.0 f = 900 MHz 2.0 0 -30 0 -25 -10 -5.0 3 0 30 V cc = 5.0 V V cc = 2 .7 V 14 2.5 VCC = 5.0 V NFmin (dB) ICC, SUPPLY CURRENT (mA) -15 Figure 5. Supply Current versus Input Power 16 10 6.0 -20 Pin, INPUT POWER (dBm) Figure 4. Output Power versus Input Power 8.0 0 VCC = 5.0 V Pin, INPUT POWER (dBm) 12 -5.0 14 5.0 -20 -30 -10 Figure 3. Output Power versus Input Power 15 10 -15 Pin, INPUT POWER (dBm) 3.9 V 3.3 V 2 25 V cc = 3 .3 V V cc = 3 . 3 V V cc = 2 .7 V 20 V cc = 5. 0 V 1.5 15 1 10 2.7 V 4.0 f = 1900 MHz 2.0 0 -30 Associated Gain (dB) MAXIMUM UNILATERAL GAIN (dB) 35 -25 -20 -15 -10 -5.0 Pin, INPUT POWER (dBm) Figure 6. Supply Current versus Input Power 0 0.5 0.500 1.000 1.500 2.000 5 2.500 f, Frequency (GHz) Figure 7. Minimum Noise Figure and Associated Gain versus Frequency MBC13916 Technical Data, Rev. 2.2 4 Freescale Semiconductor Electrical Characteristics 3.1 Applications Circuits Figures 8 and 9 show the 900 MHz applications circuit configuration and printed circuit board. The 1.9 GHz application configuration circuit and printed circuit board are shown in Figures 10 and 11. Tables 5 and 6 represent the electrical characteristics for the tested 900 MHz and 1.9 GHz application circuits. The bill of materials is listed in Table 7. C5 3 pF C4 1. 5 pF 1 C1 47 pf 3 RF Out L2 10. 0 nH L1 6. 8 nH 2 RF In C2 .01µf C3 100 pf 4 Vcc Figure 8. 900 MHz Applications Circuit Configuration C2 C3 L2 C1 L1 Q1 C5 C4 Figure 9. 900 MHz Printed Circuit Board Table 5. Electrical Characteristics (VCC = 2.7 V, TA = 25° C, fRF = 900 MHz, Tested in Circuit Shown in Figure 8, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Small Signal Gain S21 17 19 21 dB Noise Figure NF - 1.25 - dB Power Output at 1.0 dB Gain Compression P1dB 0 2.5 - dBm Output 3rd Order Intercept Point OIP3 - 11 - dBm MBC13916 Technical Data, Rev. 2.2 Freescale Semiconductor 5 Electrical Characteristics Table 5. Electrical Characteristics (VCC = 2.7 V, TA = 25° C, fRF = 900 MHz, Tested in Circuit Shown in Figure 8, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Reverse Isolation S12 - -42 - dB Supply Current ICC 3.8 4.7 5.6 mA L3 5. 6 nH 1 C1 3. 3 pf 3 RF Out L2 10 nH L1 3. 3 nH 2 RF In C4 2. 7 pF C3 100 pf C2 .01µf 4 Vcc Figure 10. 1.9 GHz Application Configuration Circuit C2 C3 L2 C1 L1 Q1 C4 L3 Figure 11. 1.9 GHz Printed Circuit Board Table 6. Electrical Characteristics (VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 10, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Small Signal Gain S21 9.5 11.5 13.5 dB Noise Figure NF - 2.1 - dB Power Output at 1.0 dB Gain Compression P1dB - -4.0 - dBm Output 3rd Order Intercept Point OIP3 - 5.5 - dBm MBC13916 Technical Data, Rev. 2.2 6 Freescale Semiconductor Electrical Characteristics Table 6. Electrical Characteristics (continued) (VCC = 2.7 V, TA = 25°C, fRF = 1.9 GHz, Tested in Circuit Shown in Figure 10, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Reverse Isolation S12 - -28 - dB Supply Current ICC 3.8 4.7 5.6 mA Table 7. Bill of Materials1 Component Value Case Manufacturer Comments C1 47 pF 0402 Murata DC Block C2 .01 uF 0402 Murata Low freq bypass to improve IP3 C3 100 pF 0402 Murata RF bypass C4 1.5 pF 0402 Murata DC block, Output match C5 3.0 pF 0402 Murata Output match, S22 improvement L1 6.8 nH 0402 Toko Input match L2 10.0 nH 0402 Toko DC Feedthrough, Output match Q1 MBC13916 SOT343R Freescale C1 3.3 pF 0402 Murata DC Block, Input match C2 .01 uF 0402 Murata Low freq bypass to improve IP3 C3 100 pF 0402 Murata RF bypass C4 2.7 pF 0402 Murata DC block, Output match L1 3.3 nH 0402 Murata Input match L2 10 nH 0402 Toko DC Feedthrough, Output match L3 5.6 nH 0402 Toko Output match Q1 MBC13916 SOT343R Freescale 900 MHz Figure 8 SiGe cascode amp 1.9 GHz Figure 10 1 SiGe cascode amp All components are RoHS compliant. MBC13916 Technical Data, Rev. 2.2 Freescale Semiconductor 7 Electrical Characteristics Table 8. Scattering Parameters (VCC = 2.7 V, 50 Ω System) f (MHz) S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.829 -11 11.98 165 0.001 17 0.955 -4 200 0.798 -21 11.43 152 0.002 47 0.957 -7 300 0.753 -31 10.69 139 0.002 55 0.956 -11 400 0.701 -39 10.12 128 0.003 56 0.955 -14 500 0.648 -46 9.28 118 0.003 51 0.955 -18 600 0.599 -53 8.66 108 0.004 49 0.954 -22 700 0.554 -58 7.95 98 0.004 41 0.947 -26 800 0.518 -61 7.33 90 0.004 24 0.941 -30 900 0.485 -65 6.83 82 0.004 15 0.933 -34 1000 0.458 -67 6.23 74 0.004 -4 0.926 -38 1100 0.438 -69 5.78 67 0.004 -28 0.915 -43 1200 0.426 -71 5.39 60 0.005 -50 0.902 -46 1300 0.417 -72 4.97 52 0.006 -74 0.893 -51 1400 0.414 -73 4.59 46 0.008 -93 0.879 -54 1500 0.415 -74 4.31 39 0.011 -106 0.868 -58 1600 0.421 -75 3.99 32 0.014 -115 0.851 -62 1700 0.430 -76 3.66 25 0.018 -125 0.835 -66 1800 0.441 -78 3.43 19 0.022 -131 0.818 -70 1900 0.455 -80 3.16 12 0.027 -139 0.803 -73 2000 0.474 -82 2.93 5 0.033 -146 0.777 -77 2100 0.490 -85 2.70 -1 0.039 -152 0.761 -81 2200 0.504 -88 2.48 -8 0.045 -159 0.735 -85 2300 0.524 -92 2.27 -14 0.052 -163 0.707 -89 2400 0.542 -95 2.09 -21 0.059 -169 0.683 -93 2500 0.559 -98 1.90 -28 0.067 -175 0.651 -98 2600 0.572 -103 1.70 -34 0.075 180 0.624 -102 2700 0.587 -106 1.56 -40 0.083 174 0.593 -107 2800 0.603 -110 1.40 -48 0.091 169 0.562 -111 2900 0.610 -114 1.26 -55 0.098 163 0.533 -116 3000 0.613 -118 1.11 -60 0.105 160 0.501 -120 MBC13916 Technical Data, Rev. 2.2 8 Freescale Semiconductor Electrical Characteristics Table 9. Scattering Parameters (VCC = 3.0 V, 50 Ω System) f (MHz) S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.812 -11 13.42 165 0.001 11 0.954 -3 200 0.778 -21 12.73 151 0.001 50 0.955 -7 300 0.731 -30 11.82 138 0.002 58 0.956 -11 400 0.677 -38 11.10 127 0.003 50 0.954 -14 500 0.623 -44 10.12 116 0.003 51 0.954 -18 600 0.575 -50 9.37 107 0.003 43 0.952 -22 700 0.533 -54 8.56 98 0.003 30 0.945 -26 800 0.499 -57 7.85 90 0.004 24 0.937 -30 900 0.470 -59 7.29 82 0.004 8 0.930 -34 1000 0.448 -61 6.63 74 0.003 -11 0.923 -38 1100 0.433 -63 6.14 67 0.004 -38 0.911 -42 1200 0.423 -64 5.72 60 0.005 -58 0.900 -46 1300 0.418 -65 5.27 53 0.006 -77 0.891 -50 1400 0.421 -66 4.87 47 0.008 -96 0.878 -54 1500 0.425 -67 4.56 40 0.011 -108 0.868 -58 1600 0.432 -68 4.23 34 0.014 -120 0.852 -61 1700 0.444 -70 3.89 27 0.018 -126 0.838 -65 1800 0.459 -72 3.63 21 0.022 -133 0.822 -69 1900 0.473 -74 3.35 15 0.027 -140 0.809 -73 2000 0.490 -77 3.12 8 0.033 -147 0.784 -77 2100 0.509 -80 2.87 2 0.039 -152 0.769 -80 2200 0.527 -83 2.64 -5 0.045 -159 0.744 -84 2300 0.545 -86 2.42 -11 0.051 -163 0.717 -88 2400 0.560 -90 2.23 -17 0.059 -170 0.694 -92 2500 0.579 -94 2.03 -24 0.067 -175 0.663 -97 2600 0.594 -98 1.82 -30 0.075 -180 0.637 -101 2700 0.606 -101 1.68 -36 0.083 175 0.607 -105 2800 0.620 -105 1.50 -43 0.090 169 0.576 -110 2900 0.630 -110 1.35 -50 0.097 164 0.548 -114 3000 0.636 -113 1.19 -55 0.105 160 0.516 -119 MBC13916 Technical Data, Rev. 2.2 Freescale Semiconductor 9 Electrical Characteristics Table 10. Scattering Parameters (VCC = 3.9 V, 50 Ω System) f (MHz) S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.796 -11 14.82 164 0.001 25 0.954 -3 200 0.760 -20 13.98 150 0.001 50 0.955 -7 300 0.711 -29 12.90 137 0.002 46 0.955 -11 400 0.655 -36 12.03 126 0.002 55 0.955 -14 500 0.602 -42 10.90 115 0.003 50 0.954 -18 600 0.556 -46 10.04 106 0.003 45 0.954 -22 700 0.517 -50 9.12 97 0.003 34 0.947 -26 800 0.487 -52 8.34 89 0.003 22 0.940 -30 900 0.463 -54 7.72 82 0.003 11 0.933 -34 1000 0.444 -56 7.02 74 0.003 -6 0.927 -38 1100 0.432 -57 6.49 67 0.003 -40 0.917 -42 1200 0.428 -58 6.03 61 0.005 -69 0.905 -46 1300 0.427 -59 5.55 53 0.006 -88 0.896 -50 1400 0.430 -60 5.13 48 0.008 -99 0.883 -53 1500 0.437 -61 4.81 41 0.011 -111 0.874 -57 1600 0.449 -62 4.45 35 0.014 -118 0.858 -61 1700 0.462 -64 4.09 29 0.018 -128 0.843 -64 1800 0.475 -66 3.83 23 0.022 -134 0.829 -68 1900 0.493 -69 3.53 17 0.027 -140 0.815 -72 2000 0.512 -72 3.28 10 0.032 -148 0.790 -76 2100 0.529 -75 3.03 4 0.038 -152 0.776 -79 2200 0.544 -78 2.79 -2 0.045 -159 0.752 -83 2300 0.565 -82 2.56 -8 0.051 -164 0.726 -87 2400 0.583 -85 2.37 -14 0.058 -169 0.704 -91 2500 0.599 -89 2.16 -21 0.067 -175 0.674 -96 2600 0.613 -93 1.94 -27 0.075 -179 0.648 -100 2700 0.629 -97 1.79 -32 0.083 175 0.621 -105 2800 0.643 -101 1.60 -39 0.091 170 0.589 -109 2900 0.650 -105 1.44 -46 0.098 164 0.562 -114 3000 0.653 -109 1.28 -51 0.105 160 0.531 -118 MBC13916 Technical Data, Rev. 2.2 10 Freescale Semiconductor Electrical Characteristics Table 11. Scattering Parameters (VCC = 5.0 V, 50 Ω System) f (MHz) S11 S21 S12 S22 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.719 -9 21.47 161 0.001 5 0.939 -3 200 0.678 -17 19.60 145 0.001 18 0.939 -7 300 0.628 -23 17.43 132 0.001 38 0.940 -10 400 0.579 -27 15.66 120 0.002 47 0.937 -14 500 0.540 -30 13.78 110 0.002 38 0.936 -18 600 0.512 -32 12.40 101 0.003 37 0.934 -22 700 0.492 -34 11.05 93 0.002 32 0.927 -26 800 0.480 -34 9.97 86 0.002 9 0.920 -30 900 0.472 -35 9.12 79 0.002 -14 0.914 -34 1000 0.470 -37 8.21 73 0.002 -54 0.908 -38 1100 0.473 -37 7.54 67 0.003 -75 0.899 -42 1200 0.478 -39 6.97 61 0.004 -90 0.890 -46 1300 0.484 -40 6.37 54 0.006 -101 0.884 -50 1400 0.496 -42 5.86 50 0.008 -114 0.875 -54 1500 0.509 -44 5.49 44 0.010 -120 0.871 -57 1600 0.521 -46 5.08 39 0.013 -128 0.858 -60 1700 0.535 -49 4.67 34 0.017 -133 0.848 -63 1800 0.552 -51 4.38 29 0.021 -139 0.838 -67 1900 0.570 -54 4.06 23 0.025 -144 0.829 -70 2000 0.587 -56 3.80 18 0.030 -150 0.807 -73 2100 0.604 -60 3.54 13 0.036 -154 0.795 -76 2200 0.621 -63 3.28 7 0.042 -160 0.772 -79 2300 0.643 -67 3.04 2 0.048 -164 0.746 -83 2400 0.658 -70 2.84 -4 0.056 -169 0.722 -87 2500 0.673 -74 2.61 -10 0.063 -175 0.687 -91 2600 0.690 -78 2.36 -16 0.071 -179 0.657 -96 2700 0.705 -82 2.19 -21 0.079 176 0.623 -101 2800 0.715 -86 1.97 -27 0.088 170 0.588 -107 2900 0.720 -91 1.78 -33 0.094 164 0.556 -113 3000 0.723 -94 1.57 -38 0.101 161 0.523 -119 MBC13916 Technical Data, Rev. 2.2 Freescale Semiconductor 11 Noise Parameters 4 Noise Parameters Noise parameters for the MBC13916 are represented in Table 12. Table 12. Noise Parameters Freq Fmin Gamma Opt Ga Rn MHz dB Mag Angle dB (VCC = 2.7 V, Icc = 4.7 mA) 0.500 0.92 0.14 47.6 0.18 29.08 0.700 0.92 0.14 64.2 0.14 26.61 0.900 0.96 0.14 79.6 0.12 24.22 1.000 0.99 0.14 86 0.11 23.05 1.500 1.37 0.15 119.4 0.11 17.5 1.900 1.88 0.17 140.3 0.15 13.4 2.000 2.03 1.8 144.9 0.16 12.43 2.400 2.79 0.2 160.4 0.22 8.71 Vcc = 3.3 V, Icc = 6 mA 0.500 0.96 0.13 35.5 0.19 29.98 0.700 0.97 0.13 55.3 0.15 27.34 0.900 1 0.12 75.1 0.13 24.81 1.000 1.05 0.12 85.1 0.12 23.59 1.500 1.39 0.13 135.7 0.12 17.91 1.900 1.84 0.14 176.5 0.16 13.88 2.000 1.97 0.15 -173.9 0.17 12.95 2.400 2.62 0.17 -135.5 0.24 9.48 Vcc = 5 V, Icc = 10.5 mA 0.500 1.07 0.11 0.2 0.21 32.36 0.700 1.11 0.1 28,8 0.18 29.19 0.900 1.18 0.09 61.3 0.15 26.22 1.000 1.21 0.08 78.8 0.14 24.87 1.500 1.46 0.07 179.8 0.13 18.81 1.900 1.74 0.07 -83.2 0.19 14.98 2.000 1.82 0.07 -56.7 0.22 14.17 2.400 2.19 0.09 58.2 0.2 11.47 MBC13916 Technical Data, Rev. 2.2 12 Freescale Semiconductor Packaging 5 Packaging Figure 12. Outline Dimensions for SOT-343R (Case 1404-01, Issue 0) MBC13916 Technical Data, Rev. 2.2 Freescale Semiconductor 13 Product Documentation 6 Product Documentation This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com on the documentation page. Table 13 summarizes revisions to this document since the previous release (Rev. 2.1). Table 13. Revision History Location Revision Table 4 Device Level Characteristics Updated Output Third Order Intercept Point. Figure 8 900 MHz Applications Circuit Configuration Updated. Figure 9 1.9 GHz Application Configuration Circuit Replaced. Table 5 Electrical Characteristics Updated Output 3rd Order Intercept Point. Figure 10 1.9 GHz Application Configuration Circuit Updated. Table 7 Bill of Materials Updated through out the table. Figure 12 Outline Dimensions for SOT-343R Updated. MBC13916 Technical Data, Rev. 2.2 14 Freescale Semiconductor NOTES MBC13916 Technical Data, Rev. 2.2 Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064, Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. 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