MC13850-1960EVK

Freescale Semiconductor Data Sheet: Advance Information Document Number: MC13850 Rev. 1, 12/2010 MC13850 Package Information Plastic Package: MLPD-8 2.0 x 2.0 x 0.6 mm Case: 2128-01 MC13850 Low Noise Amplifier with Bypass Switch 1 Introduction The MC13850 is a cost-effective, high IP3 LNA with low noise figure. This is the leadless package version of the MBC13720 device. As with the MBC13720, this device is designed for general purpose RF applications, yet has excellent high frequency gain and noise figure. An integrated bypass switch is included to preserve high input intercept performance. The input and output match are external to allow maximum design flexibility. The LNA has two selectable IP3 modes, a bypass mode and a standby mode. The MC13850 is fabricated with an advanced RF BiCMOS process using the SiGe:C module and is packaged in the MLPD-8 leadless package. 1.1 • • • Ordering Information Device Device Marking Package MC13850EP 850 MLPD-8 Contents: 1 2 3 4 5 6 7 8 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Electrical Specifications . . . . . . . . . . . . . . . . . . .3 Scattering and Noise Parameters . . . . . . . . . . . .8 Application Information . . . . . . . . . . . . . . . . . . .34 Printed Circuit Board and Bill of Materials . . .46 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 Product Documentation . . . . . . . . . . . . . . . . . . .53 Revision History . . . . . . . . . . . . . . . . . . . . . . . . .53 Features RF input frequency: 400 MHz to 2500 MHz Gain: 21 dB at 470 MHz, 14.5 dB at 1960 MHz and 12 dB at 2.4 GHz in high IP3 mode Input third order intercept point (IIP3): 10 dBm at 1960 MHz, 13 dBm at 2.4 GHz, and -2.5 dBm at 860 MHz in high IP3 mode This document contains information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2006–2010. All rights reserved. Introduction • • • • • • • • • • • • • Noise Figure (NF): 1.6 dB at 860 MHz, 1.4 dB at 1960 MHz, and 1.55 dB at 2400 MHz in low IP3 mode Output 1 dB compression point (P1dB): 9 dBm at 470 MHz and 11.5 dBm at 1060 MHz in high IP3 mode Selectable IP3 mode allows for running at the desired IP3 performance for a receiver's linearity requirements Bypass mode has return losses comparable to active mode, for use in systems with filters and duplexers Bypass mode improves dynamic range in variable signal strength environments Integrated logic-controlled standby mode with current drain < 1µA Total supply current: 5 mA at 2.7 V in low IP3 mode and 10 mA in high IP3 mode. Bypass mode 21 dB, OIP3 of 10 dBm with return losses better than -10 dB at 470 MHz and NF < 1.3 dB, S21 gain > 17 dB, OIP3 of 13 dBm at 860 MHz. This is a broadband application with application to UHF. The performance can be further optimized for narrowband applications such as RKE at the lower frequency, or wireless security at the higher frequency. Typical performance that can be expected from this circuit at 2.7V is listed in Table 17. Figure 14 shows the 470 MHz–860 MHz schematic with package pinouts and circuit components. En able 1 Vcc En ab le 2 8 7 6 5 R1 0402 330 ohm Gain Logic C5 0402 .1 uF Enable Pin 1 Locator on Package C4 0402 47 pF L3 0402 4.3 nH 1 2 3 L2 0402 18 nH 4 NC RF IN Gnd C1 0402 27 pF L1 0402 47 nH C2 0402 .1 uF C3 0402 5 pF R2 0402 51 ohm . RF OUT Figure 14. 470 MHz–860 MHz Application Schematic Table 17. Typical 470 MHz–860 MHz Evaluation Board Performance (Vcc = 2.7V, TA = 25°C) Characteristic Symbol Min Typ Max Unit Low IP3 — 4.7 5.7 mA High IP3 — 9.9 12.5 mA Bypass — 2 10 uA Low IP3 20.5 21.6 — High IP3 23.4 24.4 — Bypass -7.4 -6.9 — 470 MHz (refer to Figure 14) Supply Current RF Gain Icc G dB MC13850 Advance Information, Rev. 1 Freescale Semiconductor 35 Application Information Table 17. Typical 470 MHz–860 MHz Evaluation Board Performance (continued) (Vcc = 2.7V, TA = 25°C) Characteristic Symbol Min Typ Max Low IP3 — 1.32 1.6 High IP3 — 1.33 1.6 Bypass — 9.5 10 Low IP3 -12.5 -11.2 — High IP3 -9.2 -8 — Bypass 26.7 27.7 — Low IP3 6 7 — High IP3 8.6 9.6 — Low IP3 — -5.2 -4.1 High IP3 — -10.6 -8.5 Bypass — -4.2 -3.2 Low IP3 20.5 21.5 — High IP3 23.1 24.1 — Bypass -7.7 -6.7 — Low IP3 — -27.3 -20 High IP3 — -30.6 -25 Bypass — -6.7 -6.2 Low IP3 — -6.6 -5.6 High IP3 — -10.2 -9.2 Bypass — -11.7 -10.7 Noise Figure Unit NF dB Input IP3 IIP3 dBm Power Output at 1.0 dB Gain Compression Input Return Loss P1dBoutput dBm S11 dB Gain S21 dB Reverse Isolation S12 dB Output Return Loss S22 dB MC13850 Advance Information, Rev. 1 36 Freescale Semiconductor Application Information Table 17. Typical 470 MHz–860 MHz Evaluation Board Performance (continued) (Vcc = 2.7V, TA = 25°C) Characteristic Symbol Min Typ Max Low IP3 16.4 17.4 — High IP3 18 19 — Bypass -6.7 -6.2 — Low IP3 — 1.22 1.5 High IP3 — 1.32 1.6 Bypass — 5.2 5.7 Unit 860 MHz (refer to Figure 14) RF Gain G dB Noise Figure NF dB Input IP3 IIP3 dBm Low IP3 -5.3 -4 — High IP3 -2.3 -1.1 — Bypass 23.7 24.7 — Power Output at 1.0 dB Gain Compression P1dB dBm Low IP3 7.4 8.4 — High IP3 8.1 9.2 — Input Return Loss S11 dB Low IP3 — -13.7 -11 High IP3 — -21.3 -17 Bypass — -6 -5 Low IP3 17 18 — High IP3 18.4 19.4 — Bypass -6.8 -5.8 — Low IP3 — -26.9 -25 High IP3 — -29.2 -28.2 Bypass — -5.7 -5 Gain S21 dB Reverse Isolation S12 dB MC13850 Advance Information, Rev. 1 Freescale Semiconductor 37 Application Information Table 17. Typical 470 MHz–860 MHz Evaluation Board Performance (continued) (Vcc = 2.7V, TA = 25°C) Characteristic Symbol Min Typ Max Low IP3 — -5.3 -4.3 High IP3 — -7.2 -6.2 Bypass — -8.2 -7.2 Output Return Loss Unit S22 dB 4.2 900 MHz Application This application was designed to provide NF < 1.4 dB, S21 gain > 21 dB, OIP3 of 17 dBm with return losses better than -10 dB at 900 MHz. Typical performance that can be expected from this circuit at 2.7V is listed in Table 18. Figure 15 shows the 900 MHz schematic with package pinouts and circuit components. Enable2 Enable1 8 7 6 Vcc 5 R1 0402 330 ohm Gain L ogic C5 0402 .1 uF Enable Pin 1 Locator on Package C4 0402 47 pF L3 0402 4.3 nH 1 2 3 L2 0402 8.2 nH 4 NC RF IN Gnd L1 0402 22 nH C2 0402 .1 uF C1 0402 27 pF . RF OUT R2 0402 15 ohm C3 0402 2.7 pF Figure 15. 900 MHz Application Schematic Table 18. Typical 900 MHz Evaluation Board Performance (Vcc = 2.7V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit Low IP3 — 4.7 5.7 mA High IP3 — 9.9 12.5 mA 900 MHz (refer to Figure 15) Supply Current Icc MC13850 Advance Information, Rev. 1 38 Freescale Semiconductor Application Information Table 18. Typical 900 MHz Evaluation Board Performance (continued) (Vcc = 2.7V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit — 2 10 uA Low IP3 20 21 — High IP3 20.8 21.8 — Bypass -4.5 -3.7 — Low IP3 — 1.38 1.6 High IP3 — 1.53 1.75 Bypass — 3.85 4.6 Low IP3 -6.5 -4.1 — High IP3 1.75 3.5 — Bypass 27 27.6 — Low IP3 10.9 11.9 — High IP3 11.1 12.1 — Low IP3 — -10.7 -7 High IP3 — -15.3 -12 Bypass — -9.5 -8 Low IP3 20.1 21.1 — High IP3 20.8 21.8 — Bypass -4.5 -3.5 — Low IP3 — -23.9 -22.8 High IP3 — -26.8 -25.7 Bypass — -3.5 -2.5 Low IP3 — -10.7 -9.6 High IP3 — -18.4 -15 Bypass — -18 -12.6 Bypass RF Gain G dB Noise Figure NF dB Input IP3 IIP3 dBm Power Output at 1.0 dB Gain Compression P1dBoutput Input Return Loss dBm S11 dB Gain S21 dB Reverse Isolation S12 dB Output Return Loss S22 dB MC13850 Advance Information, Rev. 1 Freescale Semiconductor 39 Application Information 4.3 900 MHz High IP3 Application This application was designed to demonstrate performance at 900 MHz using capacitive feedback from the output to input to raise IP3. Typical performance that can be expected from this circuit at 2.75V is listed in Table 19. Figure 16 shows the High IP3 900 MHz schematic with package pinouts and circuit components. This 900 MHz application differs from the 900 MHz application in Section 4.2, “900 MHz Application in that it uses output to input feedback capacitance to raise the IP3 performance. Enable 1 8 Enable2 7 6 Vcc 5 R1 0402 330 ohm Gain Logic C7 0402 .1 uF Enable Pin 1 Locator on Package C8 0402 47 pF C1 0402 100 pF 1 2 3 4 NC RF IN Gnd C2 0402 .1 uF L1 0402 9.1 nH . C3 0402 0.5 pF L2 0402 5.6 nH R2 0402 10 ohm C5 0402 1pF RF OUT C6 0402 5.1 pF C4 0402 0.5 pF Figure 16. 900 MHz High IP3 Application Schematic Table 19. Typical 900 MHz High IP3 Evaluation Board Performance (Vcc - 2.75V, TA = 25°C) Characteristic Symbol Min Typ Max Unit Low IP3 — 4.7 5.7 mA High IP3 — 9.9 12.5 mA Bypass — 2 10 uA Low IP3 15.5 16.5 — High IP3 16.1 17.1 — Bypass -5.2 -4.2 — 900 MHz (refer to Figure 16) Supply Current RF Gain Icc G dB MC13850 Advance Information, Rev. 1 40 Freescale Semiconductor Application Information Table 19. Typical 900 MHz High IP3 Evaluation Board Performance (continued) (Vcc - 2.75V, TA = 25°C) Characteristic Min Typ Max Low IP3 — 1.43 1.65 High IP3 — 1.55 1.75 Bypass — 4.6 5.8 Low IP3 -6 -2.9 — High IP3 6 8 — Bypass 26.2 27.7 — Low IP3 8 12 — High IP3 11.5 13.5 — Low IP3 — -12 -8 High IP3 — -10 -8 Bypass — -9 -7 Low IP3 15.7 16.7 — High IP3 16.2 17.2 — Bypass -4.7 -3.9 — Low IP3 — -19.3 -17.5 High IP3 — -22.4 -21 Bypass — -3.9 -3.2 Low IP3 — -11 -8.5 High IP3 — -12.8 -10 Bypass — -31 -24 Noise Figure Symbol Unit NF dB Input IP3 IIP3 dBm Power Output at 1.0 dB Gain Compression P1dBoutput Input Return Loss dBm S11 dB Gain S21 dB Reverse Isolation S12 dB Output Return Loss S22 dB MC13850 Advance Information, Rev. 1 Freescale Semiconductor 41 Application Information 4.4 1960 MHz Application This application was designed to provide NF = 1.5 dB, S21 gain > 15 dB, OIP3 of 20 dBm with return losses better than -10 dB at 1960 MHz. Typical performance that can be expected from this circuit at 2.7V is listed in Table 20. Figure 17 shows the 1960 MHz schematic with package pinouts and circuit components. Enable2 Enable1 8 7 6 Vcc 5 R1 0402 330 ohm Gain Logic Enable Pin 1 Locator on Package C4 0402 33 pF C1 0402 27 pF 1 3 2 L2 0402 2.7 nH 4 NC RF IN Gnd L1 0402 3.3 nH L1 0402 33 nH C5 0402 .1 uF . C3 0402 27 pF R2 0402 5 ohm RF OUT C2 0402 .1 uF Figure 17. 1960 MHz Application Schematic Table 20. Typical 1900 MHz Evaluation Board Performance (Vcc = 2.7V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit Low IP3 — 4.7 5.7 mA High IP3 — 9.9 12.5 mA Bypass — 2 10 uA Low IP3 13.8 14.8 — High IP3 13.9 14.9 — Bypass -4.8 -3.5 — 1960 MHz (refer to Figure 17) Supply Current RF Gain Icc G dB MC13850 Advance Information, Rev. 1 42 Freescale Semiconductor Application Information Table 20. Typical 1900 MHz Evaluation Board Performance (continued) (Vcc = 2.7V, Ta = 25°C) Characteristic Min Typ Max Low IP3 — 1.5 1.8 High IP3 — 1.75 2 Bypass — 3.2 4.4 Low IP3 3.5 6.5 — High IP3 8 9.6 — Bypass 22.6 23.6 — Low IP3 1.5 3.2 — High IP3 2.3 4 — Low IP3 — -12 -9.5 High IP3 — -12.5 -10 Bypass — -11 -8 Low IP3 14 15 — High IP3 14 15 — Bypass -4.8 -3.6 — Low IP3 — -21 -20 High IP3 — -22.5 -21.5 Bypass — -3.7 -2.5 Low IP3 — -13 -9 High IP3 — -15 -11 Bypass — -8 -6 Noise Figure Symbol Unit NF dB Input IP3 IIP3 dBm Power Output at 1.0 dB Gain Compression P1dBoutput Input Return Loss dBm S11 dB Gain S21 dB Reverse Isolation S12 dB Output Return Loss S22 dB MC13850 Advance Information, Rev. 1 Freescale Semiconductor 43 Application Information 4.5 2400 MHz Application This application was designed to provide NF = 1.6 dB, S21 gain = 12 dB, OIP3 of 23 dBm at 2400 MHz. Typical performance that can be expected from this circuit at 2.7V is listed in Table 21. Figure 18 shows the 2400 MHz schematic with package pinouts and circuit components. Ena ble1 8 En ab le2 7 6 Vcc 5 R1 0402 330 ohm Gain Lo g ic C5 0402 .1 uF Enable Pin 1 L o cato r on Pa ckag e C4 0402 33 pF C1 0402 5 pF 1 2 3 L2 0402 3.3 nH 4 NC R F IN Gn d L1 0402 3 nH C3 0402 27 pF R2 0402 5 ohm . RF OUT C2 0402 .1 uF Figure 18. 2400 MHz Application Schematic Table 21. Typical 2400 MHz Evaluation Board Performance (Vcc = 2.7V, Ta = 25°C) Characteristic Symbol Min Typ Max Unit Low IP3 — 4.7 5.7 mA High IP3 — 9.9 12.5 mA Bypass — 2 10 uA Low IP3 11.5 12.5 — High IP3 12 13 — Bypass -4 -3 — 2400 MHz (refer to Figure 18) Supply Current RF Gain Icc G dB MC13850 Advance Information, Rev. 1 44 Freescale Semiconductor Application Information Table 21. Typical 2400 MHz Evaluation Board Performance (continued) (Vcc = 2.7V, Ta = 25°C) Characteristic Min Typ Max Low IP3 — 1.6 1.95 High IP3 — 1.85 2.2 Bypass — 3.2 4.3 Low IP3 7 10 — High IP3 11 12.5 — Bypass 26 27.2 — Low IP3 -1 1 — High IP3 0 2.2 — Low IP3 — -9 -7.5 High IP3 — -9.5 -8 Bypass — -19.5 -12 Low IP3 11.6 12.6 — High IP3 12 13 — Bypass -3.7 -3.2 — Low IP3 — -20 -19 High IP3 — -20.6 -20 Bypass — -2.9 -2.4 Low IP3 — -25 -15 High IP3 — -27 -15 Bypass — -16 -10 Noise Figure Symbol Unit NF dB Input IP3 IIP3 dBm Power Output at 1.0 dB Gain Compression P1dBoutput Input Return Loss dBm S11 dB Gain S21 dB Reverse Isolation S12 dB Output Return Loss S22 dB MC13850 Advance Information, Rev. 1 Freescale Semiconductor 45 Printed Circuit Board and Bill of Materials 5 Printed Circuit Board and Bill of Materials Figure 19 is a drawing of the printed circuit board. Figure 21 through Figure 25 are drawings of the evaluation boards used for each of the application frequency designs described in Section 4. These drawings show the boards with the circuit matching components placed and identified. Note: Dimensions are in inches and [mm]. Soldering Note: The center flag under the part needs to be soldered down to ground on the bo Figure 19. Printed Circuit Board Figure 20. Typical Assembled Evaluation Board with SMA Connectors MC13850 Advance Information, Rev. 1 46 Freescale Semiconductor Printed Circuit Board and Bill of Materials Figure 21. 470–860 MHz Application Board Figure 22. 900 MHz Application Board MC13850 Advance Information, Rev. 1 Freescale Semiconductor 47 Printed Circuit Board and Bill of Materials Figure 23. 900 MHz High IP3 Application Board Figure 24. 1960 MHz Application Board MC13850 Advance Information, Rev. 1 48 Freescale Semiconductor Printed Circuit Board and Bill of Materials Figure 25. 2400 MHz Application Board The Bill of Materials for each of the application frequency circuit boards is listed in Table 22. The value, case size, manufacturer and circuit function of each component are provided. Table 22. Bill of Materials for the Application Circuit Boards Component Value Case Manufacturer Comments 470–860 MHz (refer to Figure 21) C1 27 pF 402 Murata DC block, input match C2 0.1 uF 402 Murata Low freq. bypass C3 5 pF 402 Murata DC block, output match C4 47 pF 402 Murata 860 MHz short C5 0.1 uF 402 Murata Low freq. bypass L1 47 nH 402 Murata Input match L2 18 nH 402 Murata Output match, bias decouple L3 4.3 nH 402 Murata Input match R1 330 Ω 402 KOA Logic circuit bias R2 51 Ω 402 KOA Lower gain, improve return losses 900 MHz (refer to Figure 22) C1 27 pF 402 Murata DC block, input match C2 0.1 uF 402 Murata DC block, input match C3 2.7 pF 402 Murata DC block, output match C4 47 pF 402 Murata 900 MHz short C5 0.1 uF 402 Murata Low freq. bypass L1 22 nH 402 Murata Input match MC13850 Advance Information, Rev. 1 Freescale Semiconductor 49 Printed Circuit Board and Bill of Materials Table 22. Bill of Materials for the Application Circuit Boards (continued) Component Value Case Manufacturer Comments L2 8.2 nH 402 Murata Output match, bias decouple L3 4.3 nH 402 Murata Input match R1 330 Ω 402 KOA Logic circuit bias R2 15 Ω 402 KOA Lower gain, improve return losses 900 MHz High IP3 (refer to Figure 23) C1 100 pF 402 Murata DC block, input match C2 0.1 uF 402 Murata DC block, input match C3 0.5 pF 402 Murata IP3 improvement C4 0.5 pF 402 Murata IP3 improvement C5 1.0 pF 402 Murata Output match C6 5.1 pF 402 Murata Output match C7 0.1 uF 402 Murata Bypass C8 47 pF 402 Murata 900 MHz short L1 9.1 nH 402 Murata Input match L2 5.6 nH 402 Murata Output match R1 330 Ω 402 KOA Logic circuit bias R2 10 Ω 402 KOA Lower gain, increase stability 1960 MHz (refer to Figure 24) C1 27 pF 402 Murata DC block, input match C2 0.1 uF 402 Murata DC block C3 27 pF 402 Murata DC block, output match C4 33 pF 402 Murata 1960 MHz short C5 0.1 uF 402 Murata Low freq. bypass L1 33 nH 402 Murata Input match L2 3.3 nH 402 Murata Input match L3 2.7 nH 402 Murata Output match, bias decouple R1 330 Ω 402 KOA Logic circuit bias R2 5Ω 402 KOA Lower gain, increase stability 2400 MHz (refer to Figure 25) C1 5 pF 402 Murata DC block, input match C2 0.1 uF 402 Murata DC block C3 27 pF 402 Murata DC block, output match MC13850 Advance Information, Rev. 1 50 Freescale Semiconductor Printed Circuit Board and Bill of Materials Table 22. Bill of Materials for the Application Circuit Boards (continued) Component Value Case Manufacturer Comments C4 33 pF 402 Murata 1960 MHz short C5 0.1 uF 402 Murata Low freq. bypass L1 3 nH 402 Murata Input match L2 3.3 nH 402 Murata Input match R1 330 Ω 402 KOA Logic circuit bias R2 5Ω 402 KOA Lower gain, increase stability MC13850 Advance Information, Rev. 1 Freescale Semiconductor 51 Packaging 6 Packaging Figure 26 and Figure 27 are the package drawings with dimensions for the MLPD-8, 2 × 2 × 0.6 mm, package. DETAIL G (See Figure 27) Figure 26. Outline Dimensions for MLPD-8 MC13850 Advance Information, Rev. 1 52 Freescale Semiconductor Product Documentation Figure 27. Packaging Details 7 Product Documentation This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com. 8 Revision History Table 23 summarizes the revisions to this document since Rev. 0. Table 23. Revision History Revision Description of Change 0 Initial Release 1 Technical Content Changes include: • In Table 4, min and max values added. • Added Table 5–Table 16, S parameters. • Added Figure 2–Figure 9, constant gain and noise figure circles. • Added Figure 10,Figure 11, minimum NF and associated gain. • Added Figure 12, Figure 13, maximum stable gain and forward insertion gain. • Section 4 application circuit performance parameters extensively revised. • Section 5 printed circuit board and application board drawings added. • Table 22 bill of materials for application revised. • Section 6 package drawing changed to MLPD-8 package. MC13850 Advance Information, Rev. 1 Freescale Semiconductor 53 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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